JP7349439B2 - 経路層を持つ複数領域ペデスタルヒーター - Google Patents
経路層を持つ複数領域ペデスタルヒーター Download PDFInfo
- Publication number
- JP7349439B2 JP7349439B2 JP2020545073A JP2020545073A JP7349439B2 JP 7349439 B2 JP7349439 B2 JP 7349439B2 JP 2020545073 A JP2020545073 A JP 2020545073A JP 2020545073 A JP2020545073 A JP 2020545073A JP 7349439 B2 JP7349439 B2 JP 7349439B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistive
- resistive layer
- support pedestal
- support member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0202—Switches
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/005—Heaters using a particular layout for the resistive material or resistive elements using multiple resistive elements or resistive zones isolated from each other
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/007—Heaters using a particular layout for the resistive material or resistive elements using multiple electrically connected resistive elements or resistive zones
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/014—Heaters using resistive wires or cables not provided for in H05B3/54
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/016—Heaters using particular connecting means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/035—Electrical circuits used in resistive heating apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Resistance Heating (AREA)
- Control Of Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (14)
- 複数の加熱領域を画定する複数の抵抗加熱素子を有する抵抗層、経路層、複数の導電ビア、および該経路層に接続された複数の電気端子を含む支持部材であって、該複数の抵抗加熱素子が該複数の電気端子に直接的には接続されていない、支持部材を備え、
該支持部材は相互に反対側の表面を有するメイン基板を含み、該抵抗層および該経路層は、該メイン基板の該相互に反対側の表面上に配置され、該メイン基板を貫通して延びる該複数の導電ビアによって接続され、
該複数の抵抗加熱素子が、複数のワイヤーによって、該抵抗層の加熱領域の数が該経路層に接続された該複数のワイヤーの数以上となるように接続されている、支持ペデスタル。 - 該抵抗層および該経路層は該支持部材に対して垂直な平面上に配置され、該抵抗層および該経路層は、該抵抗層が該支持部材の中央領域を横断して延びるように、オーバーラップする、請求項1に記載の支持ペデスタル。
- 該経路層は、中央部分と、該中央部分から延びる複数のアーム部分とを含み、該複数のアーム部分の数は該抵抗加熱素子の数と一致する、請求項1に記載の支持ペデスタル。
- 該メイン基板の該相互に反対側の表面は、上面および底面であり、該メイン基板は、その中に該導電ビアを受け入れるための複数のビア開口と、該底面に開口する複数の盲凹部とを画定している、請求項1に記載の支持ペデスタル。
- 該複数の導電ビアが、前記メイン基板の該上面から該底面まで延在し、該メイン基板の該上面および該底面と面一とされている、請求項4に記載の支持ペデスタル。
- 該複数の電気端子が該複数の盲凹部内に配置されている、請求項4に記載の支持ペデスタル。
- 該経路層は、複数のアーム部分を含み、各アーム部分は該複数の導電ビアの一対に接続される一端と、該複数の電気端子の一対に接続される他端とを有する、請求項6に記載の支持ペデスタル。
- 該複数の電気端子の少なくとも一部は、該メイン基板の該底面と面一である、請求項6に記載の支持ペデスタル。
- 該支持部材は、上層および下層をさらに含み、該抵抗層は、該上層と該メイン基板との間に配置され、該経路層は該メイン基板と該下層との間に配置されている、請求項1に記載の支持ペデスタル。
- 該経路層と同じ平面に沿って配置された第2の抵抗層をさらに含み、該経路層は、該第2の抵抗層よりも低い抵抗を有し、該第2の抵抗層の一部とオーバーラップする、請求項1に記載の支持ペデスタル。
- 該経路層は、該第2の抵抗層よりも低い抵抗を有し、該第2の抵抗層に当接するようにされている、請求項10に記載の支持ペデスタル。
- 該第2の抵抗層および該経路層と同じ平面に沿って配置された遷移トレースをさらに含み、該遷移トレースの抵抗は、該第2の抵抗層の抵抗以下である、請求項10に記載の支持ペデスタル。
- 該抵抗層が2線式ヒーター構成、該抵抗層を外部電源に接続するためのマトリクス配線構成、および該抵抗層を外部電源に接続するための複数並列配線構成のうちの1つ以上を有する、請求項1に記載の支持ペデスタル。
- 該抵抗層の該複数の加熱領域への電力を調整するための複数の電力変換器を含む制御システムをさらに備える、請求項1に記載の支持ペデスタル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762589023P | 2017-11-21 | 2017-11-21 | |
US62/589,023 | 2017-11-21 | ||
PCT/US2018/062036 WO2019104048A1 (en) | 2017-11-21 | 2018-11-20 | Multi-zone pedestal heater having a routing layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021504925A JP2021504925A (ja) | 2021-02-15 |
JP7349439B2 true JP7349439B2 (ja) | 2023-09-22 |
Family
ID=64755708
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020545074A Active JP7303820B2 (ja) | 2017-11-21 | 2018-11-20 | ビアを有さない複数領域ペデスタルヒーター |
JP2020545073A Active JP7349439B2 (ja) | 2017-11-21 | 2018-11-20 | 経路層を持つ複数領域ペデスタルヒーター |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020545074A Active JP7303820B2 (ja) | 2017-11-21 | 2018-11-20 | ビアを有さない複数領域ペデスタルヒーター |
Country Status (7)
Country | Link |
---|---|
US (4) | US11382180B2 (ja) |
JP (2) | JP7303820B2 (ja) |
KR (2) | KR102613392B1 (ja) |
CN (2) | CN212365925U (ja) |
DE (2) | DE112018005969T8 (ja) |
TW (2) | TWI756494B (ja) |
WO (2) | WO2019104060A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10667379B2 (en) * | 2016-05-10 | 2020-05-26 | Lam Research Corporation | Connections between laminated heater and heater voltage inputs |
US10764966B2 (en) * | 2016-05-10 | 2020-09-01 | Lam Research Corporation | Laminated heater with different heater trace materials |
US11551951B2 (en) * | 2020-05-05 | 2023-01-10 | Applied Materials, Inc. | Methods and systems for temperature control for a substrate |
CN113823582A (zh) * | 2020-06-21 | 2021-12-21 | 拓荆科技股份有限公司 | 用于处理站阻抗调节的装置、***和方法 |
CN114496693A (zh) * | 2020-11-11 | 2022-05-13 | 中微半导体设备(上海)股份有限公司 | 多区加热装置、下电极组件、等离子处理装置及调温方法 |
US20230110307A1 (en) * | 2021-10-08 | 2023-04-13 | Watlow Electric Manufacturing Company | Shaped electrical interconnections for multi-layer heater constructions |
TW202335174A (zh) * | 2022-02-15 | 2023-09-01 | 美商瓦特洛威電子製造公司 | 針對半導體夾盤及加熱器之製造的固態接合方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004296254A (ja) | 2003-03-27 | 2004-10-21 | Sumitomo Electric Ind Ltd | セラミックスヒータおよびそれを搭載した半導体あるいは液晶製造装置 |
JP2005303014A (ja) | 2004-04-12 | 2005-10-27 | Ngk Insulators Ltd | 基板加熱装置 |
JP2006222008A (ja) | 2005-02-14 | 2006-08-24 | Kyocera Corp | セラミックヒータ及びヒータ内蔵電子部品 |
JP2014529826A (ja) | 2011-08-30 | 2014-11-13 | ワトロウ エレクトリック マニュファクチュアリング カンパニー | サーマルアレイ制御システムおよび方法 |
JP2017029876A (ja) | 2015-07-29 | 2017-02-09 | 寿典 幕田 | 気泡から作る中空粒子およびその製造方法 |
JP2017157617A (ja) | 2016-02-29 | 2017-09-07 | 日本特殊陶業株式会社 | 加熱部材及び静電チャック |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6066836A (en) | 1996-09-23 | 2000-05-23 | Applied Materials, Inc. | High temperature resistive heater for a process chamber |
JP4503714B2 (ja) | 1996-09-23 | 2010-07-14 | アプライド マテリアルズ インコーポレイテッド | 高温抵抗式ヒーター |
US6617553B2 (en) | 1999-05-19 | 2003-09-09 | Applied Materials, Inc. | Multi-zone resistive heater |
US6423949B1 (en) | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
JP2001102157A (ja) | 1999-10-01 | 2001-04-13 | Ngk Insulators Ltd | セラミックスヒータ |
JP4028149B2 (ja) * | 2000-02-03 | 2007-12-26 | 日本碍子株式会社 | 加熱装置 |
JP2004528677A (ja) | 2000-11-29 | 2004-09-16 | サーモセラミックス インコーポレイテッド | 抵抗加熱器及びその使用法 |
KR100434487B1 (ko) | 2001-01-17 | 2004-06-05 | 삼성전자주식회사 | 샤워 헤드 및 이를 포함하는 박막 형성 장비 |
JP3897563B2 (ja) * | 2001-10-24 | 2007-03-28 | 日本碍子株式会社 | 加熱装置 |
EP1625448A4 (en) | 2002-08-21 | 2008-02-20 | Watlow Electric Mfg | VARIABLE POWER CONTROL SYSTEM |
US8423193B2 (en) | 2003-08-20 | 2013-04-16 | Watlow Electric Manufacturing Company | Variable wattage control system |
US7196295B2 (en) | 2003-11-21 | 2007-03-27 | Watlow Electric Manufacturing Company | Two-wire layered heater system |
JP2006229040A (ja) | 2005-02-18 | 2006-08-31 | Matsushita Electric Ind Co Ltd | 熱処理方法および熱処理装置 |
US9892941B2 (en) | 2005-12-01 | 2018-02-13 | Applied Materials, Inc. | Multi-zone resistive heater |
JP5202175B2 (ja) | 2008-08-07 | 2013-06-05 | 日本碍子株式会社 | シャフト付きヒータ |
KR101691044B1 (ko) | 2009-02-04 | 2016-12-29 | 맷슨 테크놀로지, 인크. | 기판의 표면에 걸친 온도 프로파일을 방사상으로 튜닝하는 정전 척 시스템 및 방법 |
US8637794B2 (en) | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
US8791392B2 (en) * | 2010-10-22 | 2014-07-29 | Lam Research Corporation | Methods of fault detection for multiplexed heater array |
US8546732B2 (en) * | 2010-11-10 | 2013-10-01 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
US8371567B2 (en) | 2011-04-13 | 2013-02-12 | Novellus Systems, Inc. | Pedestal covers |
US8624168B2 (en) * | 2011-09-20 | 2014-01-07 | Lam Research Corporation | Heating plate with diode planar heater zones for semiconductor processing |
US9324589B2 (en) * | 2012-02-28 | 2016-04-26 | Lam Research Corporation | Multiplexed heater array using AC drive for semiconductor processing |
US8809747B2 (en) * | 2012-04-13 | 2014-08-19 | Lam Research Corporation | Current peak spreading schemes for multiplexed heated array |
US9089007B2 (en) * | 2012-04-27 | 2015-07-21 | Applied Materials, Inc. | Method and apparatus for substrate support with multi-zone heating |
US9538583B2 (en) | 2013-01-16 | 2017-01-03 | Applied Materials, Inc. | Substrate support with switchable multizone heater |
JP6441927B2 (ja) | 2013-08-06 | 2018-12-19 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 局部的に加熱されるマルチゾーン式の基板支持体 |
EP3213598B1 (en) * | 2014-10-31 | 2023-07-05 | Watlow Electric Manufacturing Company | Thermal dynamic response sensing systems for heaters |
JP6129451B1 (ja) * | 2015-08-20 | 2017-05-17 | 日本碍子株式会社 | 静電チャックヒータ |
US9826574B2 (en) | 2015-10-28 | 2017-11-21 | Watlow Electric Manufacturing Company | Integrated heater and sensor system |
US10707110B2 (en) * | 2015-11-23 | 2020-07-07 | Lam Research Corporation | Matched TCR joule heater designs for electrostatic chucks |
US9812342B2 (en) * | 2015-12-08 | 2017-11-07 | Watlow Electric Manufacturing Company | Reduced wire count heater array block |
KR102552450B1 (ko) | 2015-12-28 | 2023-07-05 | 엔지케이 인슐레이터 엘티디 | 원판형 히터 및 히터 냉각판 어셈블리 |
CN212874436U (zh) * | 2017-11-21 | 2021-04-02 | 沃特洛电气制造公司 | 一种陶瓷基座组件 |
US11562913B2 (en) * | 2019-04-25 | 2023-01-24 | Watlow Electric Manufacturing Company | Multi-zone azimuthal heater |
-
2018
- 2018-11-20 WO PCT/US2018/062055 patent/WO2019104060A1/en active Application Filing
- 2018-11-20 CN CN201890001471.6U patent/CN212365925U/zh active Active
- 2018-11-20 DE DE112018005969.3T patent/DE112018005969T8/de active Active
- 2018-11-20 WO PCT/US2018/062036 patent/WO2019104048A1/en active Application Filing
- 2018-11-20 JP JP2020545074A patent/JP7303820B2/ja active Active
- 2018-11-20 KR KR1020207017915A patent/KR102613392B1/ko active IP Right Grant
- 2018-11-20 KR KR1020207017708A patent/KR102664620B1/ko active IP Right Grant
- 2018-11-20 US US16/196,699 patent/US11382180B2/en active Active
- 2018-11-20 CN CN201890001476.9U patent/CN212542359U/zh active Active
- 2018-11-20 JP JP2020545073A patent/JP7349439B2/ja active Active
- 2018-11-20 DE DE112018005962.6T patent/DE112018005962T5/de active Pending
- 2018-11-20 US US16/196,820 patent/US11343879B2/en active Active
- 2018-11-21 TW TW107141516A patent/TWI756494B/zh active
- 2018-11-21 TW TW107141512A patent/TWI710053B/zh active
-
2022
- 2022-03-16 US US17/696,486 patent/US20220210873A1/en active Pending
- 2022-06-06 US US17/832,890 patent/US11895741B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004296254A (ja) | 2003-03-27 | 2004-10-21 | Sumitomo Electric Ind Ltd | セラミックスヒータおよびそれを搭載した半導体あるいは液晶製造装置 |
JP2005303014A (ja) | 2004-04-12 | 2005-10-27 | Ngk Insulators Ltd | 基板加熱装置 |
JP2006222008A (ja) | 2005-02-14 | 2006-08-24 | Kyocera Corp | セラミックヒータ及びヒータ内蔵電子部品 |
JP2014529826A (ja) | 2011-08-30 | 2014-11-13 | ワトロウ エレクトリック マニュファクチュアリング カンパニー | サーマルアレイ制御システムおよび方法 |
JP2017029876A (ja) | 2015-07-29 | 2017-02-09 | 寿典 幕田 | 気泡から作る中空粒子およびその製造方法 |
JP2017157617A (ja) | 2016-02-29 | 2017-09-07 | 日本特殊陶業株式会社 | 加熱部材及び静電チャック |
Also Published As
Publication number | Publication date |
---|---|
KR20200086357A (ko) | 2020-07-16 |
DE112018005969T8 (de) | 2021-03-11 |
KR102664620B1 (ko) | 2024-05-14 |
KR102613392B1 (ko) | 2023-12-14 |
DE112018005962T5 (de) | 2020-08-06 |
US20190159291A1 (en) | 2019-05-23 |
TW201926540A (zh) | 2019-07-01 |
US11895741B2 (en) | 2024-02-06 |
TW201926539A (zh) | 2019-07-01 |
US20220210873A1 (en) | 2022-06-30 |
WO2019104048A1 (en) | 2019-05-31 |
JP2021504971A (ja) | 2021-02-15 |
US20190153598A1 (en) | 2019-05-23 |
TWI756494B (zh) | 2022-03-01 |
CN212365925U (zh) | 2021-01-15 |
CN212542359U (zh) | 2021-02-12 |
JP2021504925A (ja) | 2021-02-15 |
TWI710053B (zh) | 2020-11-11 |
US11343879B2 (en) | 2022-05-24 |
JP7303820B2 (ja) | 2023-07-05 |
US11382180B2 (en) | 2022-07-05 |
WO2019104060A1 (en) | 2019-05-31 |
KR20200087852A (ko) | 2020-07-21 |
DE112018005969T5 (de) | 2020-08-06 |
US20220338305A1 (en) | 2022-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7349439B2 (ja) | 経路層を持つ複数領域ペデスタルヒーター | |
US20180197757A1 (en) | Method of manufacturing a high definition heater system | |
TWI642135B (zh) | 用於半導體處理之具平面加熱區的加熱板及其製造方法 | |
JP2019505092A5 (ja) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200727 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211112 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20221215 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230118 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20230418 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230614 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230816 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230911 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7349439 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |