JP7324905B2 - 混合型埋め込みパッケージ構造及びその作製方法 - Google Patents
混合型埋め込みパッケージ構造及びその作製方法 Download PDFInfo
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- JP7324905B2 JP7324905B2 JP2022098799A JP2022098799A JP7324905B2 JP 7324905 B2 JP7324905 B2 JP 7324905B2 JP 2022098799 A JP2022098799 A JP 2022098799A JP 2022098799 A JP2022098799 A JP 2022098799A JP 7324905 B2 JP7324905 B2 JP 7324905B2
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Description
第1絶縁層と、前記第1絶縁層を貫通している導通用銅柱と、前記第1絶縁層に開けられた埋め込みキャビティと、前記導通用銅柱に電気的に接続された第1配線層とを含む基板を作製するステップと、
電子デバイスユニットを仮固定するための支持部材を前記基板の底部に設けるステップと、
前記埋め込みキャビティに対応する前記支持部材の内側に前記電子デバイスユニットを仮固定するステップであって、前記電子デバイスユニットは第1電子デバイスと第2電子デバイスを含み、前記第2電子デバイスは前記第1電子デバイスの裏面に設けられ、かつ前記第1電子デバイスの端子面は前記支持部材に面しており、前記第2電子デバイスの端子面は前記第1電子デバイスと反対するステップと、
前記電子デバイスユニットをパッケージし、前記第1配線層の一部及び第2電子デバイスの端子を露出させて、第2絶縁層を形成するステップと、
前記支持部材を除去するステップと、
前記基板の底部に第2配線層を作製するステップと、
配線して前記第2電子デバイスの端子と前記第1配線層とを接続する、ことを特徴とする混合型埋め込みパッケージ構造の作製方法を提供する。
下層からコア層、第1金属層、第2金属層、エッチングストップ層及び第1金属シード層をこの順で含む支持プレートを用意するステップと、
前記第1金属シード層の表面に、導通用銅柱用ウィンドウ及び犠牲銅柱用ウィンドウが設けられた第1フォトレジスト層を作製するステップと、
前記導通用銅柱用ウィンドウ及び犠牲銅柱用ウィンドウの位置に導通用銅柱及び犠牲銅柱をそれぞれ作製するステップと、
前記第1フォトレジスト層を除去するステップと、
銅柱を覆うように絶縁層を積層し、絶縁層を薄くして、前記導通用銅柱及び前記犠牲銅柱の端部を露出させて、前記第1絶縁層を形成するステップと、
銅柱を露出させた表面に第2金属シード層を作製するステップと、
前記第2金属シード層の表面にフォトレジスト材料を施して、フォトレジスト材料に露光及び現像を行い、第1配線層パターンを作製して、第2フォトレジスト層を形成するステップと、
配線を電気めっきし、第2フォトレジスト層及び露出させた第2金属シード層を除去し、前記第1配線層を形成するステップと、
前記第1金属層と前記第2金属層を分離するステップと、
前記第2金属層、エッチングストップ層及び第1金属シード層を除去するステップと、
両面にフォトレジスト材料を施して、フォトレジスト材料に露光及び現像を行い、前記第1配線層及び前記導通用銅柱を覆いながら、前記犠牲銅柱を露出させるステップと、
前記犠牲銅柱を除去して、前記埋め込みキャビティを形成するステップとを含む。
好ましくは、前記電子デバイスユニットをパッケージし、前記第1配線層の一部及び第2電子デバイスの端子を露出させて、第2絶縁層を形成する前記ステップは、具体的には、
絶縁材料を用いて電子デバイスをパッケージし、
絶縁材料を処理して、前記第1配線層の一部、前記第2電子デバイスの端子及び前記センサを露出させて、第2絶縁層を形成する。
前記基板の底面に第3金属シード層を作製し、
貼着又は塗布によって両面にフォトレジスト材料を施し、
フォトレジスト材料に露光及び現像を行い、上面全体を隠蔽し、底面に第2配線層パターンを作製し、第5フォトレジスト層及び第6フォトレジスト層を形成し、
第2配線を電気めっきし、
第5フォトレジスト層及び第6フォトレジスト層を除去し、
金属シード層をエッチングして、露出させた前記第3金属シード層を除去し、第2配線層を形成する。
第1絶縁層と、前記第1絶縁層を貫通している導通用銅柱と、前記第1絶縁層に開けられた埋め込みキャビティと、前記導通用銅柱に電気的に接続された第1配線層とを含む基板を作製するステップと、
前記基板の底部に支持部材を設けるステップと、
前記埋め込みキャビティに対応する前記支持部材の内側に、端子面が前記支持部材に面している第1電子デバイスを仮固定するステップと、
前記第1電子デバイスをパッケージし、前記第1配線層の一部及び第1電子デバイスの裏面を露出させて、前記第1電子デバイスの裏面において少なくとも2つのウィンドウを形成している第2絶縁層を形成するステップと、
前記支持部材を除去するステップと、
前記基板の底部に第2配線層を作製するステップと、
前記第1電子デバイスの裏面のうち前記第2絶縁層の前記ウィンドウ箇所に、端子面が前記第1電子デバイスと反対する第2電子デバイスを設けるステップと、
配線して前記第2電子デバイスの端子と前記第1配線層とを接続するステップとを含むことを特徴とする混合型埋め込みパッケージ構造の作製方法を提供する。
第1絶縁層と、前記第1絶縁層を貫通している導通用銅柱と、前記第1絶縁層に開けられた埋め込みキャビティと、前記導通用銅柱に電気的に接続された第1配線層とを含む基板と、
前記埋め込みキャビティの内部に設けられ、かつ端子面が基板の底面に面している第1電子デバイスと、
前記第1電子デバイスの裏面に設けられ、かつ端子面が基板の上面に面している第2電子デバイスと、
前記埋め込みキャビティ及び前記基板の上層を覆って埋めるとともに、前記第1配線層の一部及び前記第2電子デバイスの一部又は第1電子デバイスの裏面の一部を露出させる第2絶縁層と、
前記基板の底面に設けられ、前記導通用銅柱と前記第1電子デバイスの端子とを電気的に接続する第2配線層と、
前記第1配線層と前記第2電子デバイスの端子とを電気的に接続するリード線とを含む、ことを特徴とする混合型埋め込みパッケージ構造を提供する。
好ましくは、前記基板の上面に設けられた保護カバーをさらに含む。
本願の他の特徴及び利点は以下の明細書において説明され、かつ、その一部は明細書から明らかになり、又は本願を実施することにより把握できる。本願の目的及び他の利点は明細書、特許請求の範囲及び図面において特に記載された構造によって実現、取得できる。
貼着又は塗布によって、両面にフォトレジスト材料を施し、
フォトレジスト材料に露光及び現像を行い、上面全体を隠蔽し、底面に第2配線層パターンを作製し、第5フォトレジスト層703、第6フォトレジスト層704を形成し、
実際のニーズに応じて決定されるが、通常第6フォトレジスト層の厚さよりも小さい厚さで、第2配線を電気めっきし、
通常ストリッピングによって、第5フォトレジスト層、第6フォトレジスト層を除去し、
金属シード層をエッチングし、露出させた第3金属シード層を除去させ、第2配線層705を形成し、
底面にソルダーマスク706を作製する。ここで、ソルダーマスクは必要に応じて作製される。
S300b:さらに、図19に示すように、埋め込みキャビティ504に対応する支持部材505の内側に、端子面6011が支持部材に面している第1電子デバイス601を仮固定する。
貼着又は塗布によって、両面にフォトレジスト材料を施し、
フォトレジスト材料に露光及び現像を行い、上面全体を隠蔽し、底面に第2配線層パターンを作製し、第5フォトレジスト層703、第6フォトレジスト層704を形成し、
実際のニーズに応じて決定されるが、通常第6フォトレジスト層の厚さよりも小さい厚さで、第2配線を電気めっきし、
通常ストリッピングによって第5フォトレジスト層、第6フォトレジスト層を除去し、
金属シード層をエッチングし、露出させた第3金属シード層を除去し、第2配線層705を形成し、
底面にソルダーマスク706を作製する。
S1000b:保護カバー708を施す。
第1絶縁層502、第1絶縁層502を貫通している導通用銅柱501、第1絶縁層502に開けられた埋め込みキャビティ504、及び導通用銅柱501に電気的に接続された第1配線層503を含む基板と、
埋め込みキャビティ504の内部に設けられ、かつ端子面が基板の底面に面している第1電子デバイス601と、
第1電子デバイス601の裏面に設けられ、かつ端子面が基板の上面に面している第2電子デバイス602と、
埋め込みキャビティ504及び基板の上層を覆って埋めるとともに、第1配線層503の一部及び第2電子デバイス602の一部又は第1電子デバイスの裏面の一部を露出させる第2絶縁層503と、
基板500の底面に設けられ、導通用銅柱501と第1電子デバイス601の端子6011とを電気的に接続する第2配線層705と、
第1配線層503と第2電子デバイス602の端子6021とを電気的に接続するリード線とを含む、混合型埋め込みパッケージ構造を提供する。
Claims (20)
- 第1絶縁層と、前記第1絶縁層を貫通している導通用銅柱と、前記第1絶縁層に開けられた埋め込みキャビティと、前記導通用銅柱に電気的に接続された第1配線層とを含む基板を作製するステップと、
電子デバイスユニットを仮固定するための支持部材を前記基板の底部に設けるステップと、
前記埋め込みキャビティに対応する前記支持部材の内側に前記電子デバイスユニットを仮固定するステップであって、前記電子デバイスユニットは第1電子デバイスと第2電子デバイスを含み、前記第2電子デバイスは前記第1電子デバイスの裏面に設けられ、かつ前記第1電子デバイスの端子面は前記支持部材に面しており、前記第2電子デバイスの端子面は前記第1電子デバイスと反対するステップと、
前記電子デバイスユニットをパッケージし、前記第1配線層の一部及び第2電子デバイスの端子を露出させて、第2絶縁層を形成するステップと、
前記支持部材を除去するステップと、
前記基板の底部に第2配線層を作製するステップと、
配線して前記第2電子デバイスの端子と前記第1配線層とを接続する、ことを特徴とする混合型埋め込みパッケージ構造の作製方法。 - 前記第2配線層の作製終了後、
前記基板の底部及び前記第2配線層の表面の少なくとも一部にソルダーマスクを作製するステップと、
前記第1配線層及び前記第2配線層の表面を処理して表面処理層を形成するステップとをさらに含む、ことを特徴とする請求項1に記載の混合型埋め込みパッケージ構造の作製方法。 - 前記基板の上面に保護カバーを施すステップをさらに含む、ことを特徴とする請求項1に記載の混合型埋め込みパッケージ構造の作製方法。
- 基板を作製する前記ステップは、具体的には、
下層からコア層、第1金属層、第2金属層、エッチングストップ層及び第1金属シード層をこの順で含む支持プレートを用意するステップと、
前記第1金属シード層の表面に、導通用銅柱用ウィンドウ及び犠牲銅柱用ウィンドウが設けられた第1フォトレジスト層を作製するステップと、
前記導通用銅柱用ウィンドウ及び犠牲銅柱用ウィンドウの位置に導通用銅柱及び犠牲銅柱をそれぞれ作製するステップと、
前記第1フォトレジスト層を除去するステップと、
銅柱を覆うように絶縁層を積層し、絶縁層を薄くして、前記導通用銅柱及び前記犠牲銅柱の端部を露出させて、前記第1絶縁層を形成するステップと、
銅柱を露出させた表面に第2金属シード層を作製するステップと、
前記第2金属シード層の表面にフォトレジスト材料を施して、フォトレジスト材料に露光及び現像を行い、第1配線層パターンを作製して、第2フォトレジスト層を形成するステップと、
配線を電気めっきし、第2フォトレジスト層及び露出させた第2金属シード層を除去し、前記第1配線層を形成するステップと、
前記第1金属層と前記第2金属層を分離するステップと、
前記第2金属層、エッチングストップ層及び第1金属シード層を除去するステップと、
両面にフォトレジスト材料を施して、フォトレジスト材料に露光及び現像を行い、前記第1配線層及び前記導通用銅柱を覆いながら、前記犠牲銅柱を露出させるステップと、
前記犠牲銅柱を除去して、前記埋め込みキャビティを形成するステップとを含む、ことを特徴とする請求項1~3のいずれか1項に記載の混合型埋め込みパッケージ構造の作製方法。 - 前記第1電子デバイスと前記第2電子デバイスは接着材料で接続されている、ことを特徴とする請求項1~3のいずれか1項に記載の混合型埋め込みパッケージ構造の作製方法。
- 前記第2電子デバイスの端子台にセンサがさらに設けられている、ことを特徴とする請求項1~3のいずれか1項に記載の混合型埋め込みパッケージ構造の作製方法。
- 前記電子デバイスユニットをパッケージし、前記第1配線層の一部及び第2電子デバイスの端子を露出させて、第2絶縁層を形成する前記ステップは、具体的には、
絶縁材料を用いて電子デバイスをパッケージし、
絶縁材料を処理して、前記第1配線層の一部、前記第2電子デバイスの端子及び前記センサを露出させて、第2絶縁層を形成する、ことを特徴とする請求項6に記載の混合型埋め込みパッケージ構造の作製方法。 - 前記第2絶縁層に使用される絶縁材料は感光性絶縁材料であり、
感光性絶縁材料に露光及び現像処理を行うことによって、前記第1配線層の一部、前記第2電子デバイスの端子及び前記センサを露出させて、第2絶縁層を形成する、ことを特徴とする請求項7に記載の混合型埋め込みパッケージ構造の作製方法。 - 前記基板の底部に第2配線層を作製する前記ステップは、具体的には、
前記基板の底面に第3金属シード層を作製し、
貼着又は塗布によって両面にフォトレジスト材料を施し、
フォトレジスト材料に露光及び現像を行い、上面全体を隠蔽し、底面に第2配線層パターンを作製し、第5フォトレジスト層及び第6フォトレジスト層を形成し、
第2配線を電気めっきし、
第5フォトレジスト層及び第6フォトレジスト層を除去し、
金属シード層をエッチングして、露出させた前記第3金属シード層を除去し、第2配線層を形成する、ことを特徴とする請求項1~3のいずれか1項に記載の混合型埋め込みパッケージ構造の作製方法。 - 前記第1絶縁層は純粋な樹脂又は樹脂とガラス繊維を含む有機絶縁材料である、ことを特徴とする請求項4に記載の混合型埋め込みパッケージ構造の作製方法。
- 第1絶縁層と、前記第1絶縁層を貫通している導通用銅柱と、前記第1絶縁層に開けられた埋め込みキャビティと、前記導通用銅柱に電気的に接続された第1配線層とを含む基板を作製するステップと、
前記基板の底部に支持部材を設けるステップと、
前記埋め込みキャビティに対応する前記支持部材の内側に、端子面が前記支持部材に面している第1電子デバイスを仮固定するステップと、
前記第1電子デバイスをパッケージし、前記第1配線層の一部及び第1電子デバイスの裏面を露出させて、前記第1電子デバイスの裏面において少なくとも2つのウィンドウを形成している第2絶縁層を形成するステップと、
前記支持部材を除去するステップと、
前記基板の底部に第2配線層を作製するステップと、
前記第1電子デバイスの裏面のうち前記第2絶縁層の前記ウィンドウ箇所に、端子面が前記第1電子デバイスと反対する第2電子デバイスを設けるステップと、
配線して前記第2電子デバイスの端子と前記第1配線層とを接続するステップとを含む、ことを特徴とする混合型埋め込みパッケージ構造の作製方法。 - 第1絶縁層と、前記第1絶縁層を貫通している導通用銅柱と、前記第1絶縁層に開けられた埋め込みキャビティと、前記導通用銅柱に電気的に接続された第1配線層とを含む基板と、
前記埋め込みキャビティの内部に設けられ、かつ端子面が基板の底面に面している第1電子デバイスと、
前記第1電子デバイスの裏面に設けられ、かつ端子面が基板の上面に面している第2電子デバイスと、
前記埋め込みキャビティ及び前記基板の上層を覆って埋めるとともに、前記第1配線層の一部及び前記第2電子デバイスの一部又は第1電子デバイスの裏面の一部を露出させる第2絶縁層と、
前記基板の底面に設けられ、前記導通用銅柱と前記第1電子デバイスの端子とを電気的に接続する第2配線層と、
前記第1配線層と前記第2電子デバイスの端子とを電気的に接続するリード線とを含む、ことを特徴とする混合型埋め込みパッケージ構造。 - 前記第2電子デバイスは1つ設けられており、前記第2絶縁層は前記埋め込みキャビティ及び前記基板の上層を覆って埋めるとともに、前記第1配線層の一部及び前記第2電子デバイスの端子を露出させる、ことを特徴とする請求項12に記載の混合型埋め込みパッケージ構造。
- 前記第2電子デバイスの端子面にセンサがさらに設けられており、前記第2絶縁層によって前記埋め込みキャビティ及び前記基板の上層が覆って埋められるとともに、前記第1配線層の一部及び前記第2電子デバイスの端子と前記センサが露出している、ことを特徴とする請求項13に記載の混合型埋め込みパッケージ構造。
- 前記第2電子デバイスは少なくとも2つ設けられており、前記第2絶縁層によって前記埋め込みキャビティ及び前記基板の上層が覆って埋められるとともに、前記第1配線層の一部及び前記第1電子デバイスの裏面の一部が露出し、かつ前記第2絶縁層は第1電子デバイスの裏面において少なくとも2つのウィンドウが形成され、前記第2電子デバイスはそれぞれ、1つのウィンドウに対応して設けられている、ことを特徴とする請求項12に記載の混合型埋め込みパッケージ構造。
- 前記第2電子デバイスが少なくとも2つ設けられている場合、前記少なくとも2つの前記第2電子デバイスは、同一の電子素子又は異なる電子素子である、ことを特徴とする請求項15に記載の混合型埋め込みパッケージ構造。
- 前記第2電子デバイスは接着材料で前記第1電子デバイスの裏面に設けられている、ことを特徴とする請求項12に記載の混合型埋め込みパッケージ構造。
- 少なくとも前記第2配線層の一部を覆うソルダーマスクをさらに含む、ことを特徴とする請求項12に記載の混合型埋め込みパッケージ構造。
- 前記基板の上面に設けられた保護カバーをさらに含む、ことを特徴とする請求項12に記載の混合型埋め込みパッケージ構造。
- 前記保護カバーは光透過性カバーとされる、ことを特徴とする請求項19に記載の混合型埋め込みパッケージ構造。
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