JP7297708B2 - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 142
- 239000010410 layer Substances 0.000 description 47
- 239000000463 material Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Description
実施形態の半導体装置は、第1導電型の第1半導体層と、第1半導体層の上に設けられた、第1領域及び第2領域を有する、第1導電型の第2半導体層と、第1領域の上に設けられた、第2導電型の第1半導体領域と、第1半導体領域の上に設けられた、第1導電型の第2半導体領域と、第1半導体領域の上から第1領域に到達する第1トレンチ内に、第1絶縁膜を介して第1半導体領域に対向して設けられ第2電極であって、第1半導体層の上に設けられた第1電極と電気的に接続された第2電極と、第1トレンチ内の第2電極の下に、第2絶縁膜を介して第1領域に対向して設けられた第4電極であって、第2半導体領域の上に設けられ第2半導体領域と電気的に接続された第3電極と電気的に接続された第4電極と、第2領域の上に設けられた、第2導電型の第3半導体領域と、第3半導体領域の上に設けられた、第1導電型の第4半導体領域と、第3半導体領域の上から第2領域に到達する第2トレンチ内に、第3絶縁膜を介して第3半導体領域に対向して設けられた第5電極であって、第1電極と電気的に接続された第5電極と、第2トレンチ内の第5電極の下に、第4絶縁膜を介して第2領域に対向して設けられた第6電極であって、第1電極と電気的に接続された第6電極と、を備える。
12 ドリフト層(第2半導体層)
14 第1ベース領域(第1半導体領域)
16 第1ソース領域(第2半導体領域)
18 第1コンタクト領域
24 第2ベース領域(第3半導体領域)
26 第2ソース領域(第4半導体領域)
28 第2コンタクト領域
38 ドレイン電極(第6電極)
50 第1トレンチ
52 第2絶縁膜
54 第1絶縁膜
56 第1ゲート電極(第2電極)
58 第1フィールドプレート電極(第4電極)
60 第2トレンチ
62 第4絶縁膜
64 第3絶縁膜
66 第2ゲート電極(第5電極)
68 第2フィールドプレート電極(第6電極)
70 ソースパッド(第3電極)
72a 接続電極(第4接続電極)
72b 接続電極(第4接続電極)
80 ゲートパッド(第1電極)
82a 接続電極(第3接続電極)
82b 接続電極(第3接続電極)
84 接続電極(第1接続電極、第2接続電極)
90 第1領域
92 第2領域
94 第5絶縁膜
100 半導体装置
102 半導体チップの端部
Claims (6)
- 第1導電型の第1半導体層と、
前記第1半導体層の上に設けられた、第1領域及び第2領域を有する、第1導電型の第2半導体層と、
前記第1領域の上に設けられた、第2導電型の第1半導体領域と、
前記第1半導体領域の上に設けられた、第1導電型の第2半導体領域と、
前記第1半導体領域の上から前記第1領域に到達する第1トレンチ内に、第1絶縁膜を介して前記第1半導体領域に対向して設けられた第2電極と、
前記第2電極の上に第5絶縁膜を介して設けられ、前記第2電極と電気的に接続された第1電極と、
前記第1トレンチ内の前記第2電極の下に、第2絶縁膜を介して前記第1領域に対向して設けられた第4電極であって、前記第2半導体領域の上に設けられ前記第2半導体領域と電気的に接続された第3電極と電気的に接続された第4電極と、
前記第2領域の上に設けられた、第2導電型の第3半導体領域と、
前記第3半導体領域の上に設けられた、第1導電型の第4半導体領域と、
前記第3半導体領域の上から前記第2領域に到達する第2トレンチ内に、第3絶縁膜を介して前記第3半導体領域に対向して設けられた第5電極であって、前記第1電極と電気的に接続された第5電極と、
前記第2トレンチ内の前記第5電極の下に、第4絶縁膜を介して前記第2領域に対向して設けられた第6電極であって、前記第1電極と電気的に接続された第6電極と、
を備え、
前記第2電極及び前記第5電極が延伸する方向と交差する方向において、前記第2領域は前記第2半導体層の一端に設けられている半導体装置。 - 前記半導体装置は半導体チップであり、
前記第2領域は前記半導体チップの最端部に設けられている請求項1記載の半導体装置。 - 前記第2領域は、前記第1領域を挟むように前記一端と、前記一端に対向する他端とに設けられている請求項1又は請求項2記載の半導体装置。
- 前記第1半導体層及び前記第2半導体層が積層された方向に垂直な面内における前記第1領域の大きさは、前記面内における前記第2領域の大きさよりも大きい請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記第1電極は、前記第5絶縁膜内に設けられた第1接続電極を介して前記第2電極と電気的に接続されており、
前記第1電極は、前記第5絶縁膜内に設けられた第2接続電極を介して前記第5電極と電気的に接続されており、
前記第1電極は、前記第5絶縁膜内に設けられた第3接続電極を介して前記第6電極と電気的に接続されており、
前記第3電極は、前記第5絶縁膜内に設けられた第4接続電極を介して前記第4電極と電気的に接続されている請求項1乃至請求項4いずれか一項記載の半導体装置。 - 前記半導体装置を上から見た場合において、前記第2接続電極と前記第3接続電極の間に前記第3電極が設けられている請求項5記載の半導体装置。
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JP2020050008A JP7297708B2 (ja) | 2020-03-19 | 2020-03-19 | 半導体装置 |
CN202010817677.XA CN113497150B (zh) | 2020-03-19 | 2020-08-14 | 半导体装置 |
US17/013,372 US11201240B2 (en) | 2020-03-19 | 2020-09-04 | Semiconductor device |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070296029A1 (en) | 2006-06-09 | 2007-12-27 | Infineon Technologies Austria Ag | Integratred circuit including a trench transistor having two control electrodes |
US20110266613A1 (en) | 2010-04-30 | 2011-11-03 | Prasad Venkatraman | Semiconductor component and method of manufacture |
US20170162689A1 (en) | 2015-12-02 | 2017-06-08 | Jun Hu | Sgt mosfet with adjustable crss and ciss |
US20170170286A1 (en) | 2015-12-10 | 2017-06-15 | Infineon Technologies Ag | Semiconductor devices and a method for forming a semiconductor device |
Family Cites Families (7)
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JP5444731B2 (ja) | 2009-01-27 | 2014-03-19 | トヨタ自動車株式会社 | 半導体装置とその検査方法 |
US9425305B2 (en) | 2009-10-20 | 2016-08-23 | Vishay-Siliconix | Structures of and methods of fabricating split gate MIS devices |
JP2011199109A (ja) | 2010-03-23 | 2011-10-06 | Renesas Electronics Corp | パワーmosfet |
JP2016004847A (ja) * | 2014-06-14 | 2016-01-12 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6400545B2 (ja) * | 2015-09-11 | 2018-10-03 | 株式会社東芝 | 半導体装置 |
JP6378220B2 (ja) | 2016-02-01 | 2018-08-22 | 株式会社東芝 | 半導体装置 |
JP6862321B2 (ja) * | 2017-09-14 | 2021-04-21 | 株式会社東芝 | 半導体装置 |
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- 2020-03-19 JP JP2020050008A patent/JP7297708B2/ja active Active
- 2020-08-14 CN CN202010817677.XA patent/CN113497150B/zh active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070296029A1 (en) | 2006-06-09 | 2007-12-27 | Infineon Technologies Austria Ag | Integratred circuit including a trench transistor having two control electrodes |
US20110266613A1 (en) | 2010-04-30 | 2011-11-03 | Prasad Venkatraman | Semiconductor component and method of manufacture |
US20170162689A1 (en) | 2015-12-02 | 2017-06-08 | Jun Hu | Sgt mosfet with adjustable crss and ciss |
US20170170286A1 (en) | 2015-12-10 | 2017-06-15 | Infineon Technologies Ag | Semiconductor devices and a method for forming a semiconductor device |
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JP2021150538A (ja) | 2021-09-27 |
US11201240B2 (en) | 2021-12-14 |
US20210296491A1 (en) | 2021-09-23 |
CN113497150B (zh) | 2024-04-26 |
CN113497150A (zh) | 2021-10-12 |
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