JP7295047B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7295047B2 JP7295047B2 JP2020008267A JP2020008267A JP7295047B2 JP 7295047 B2 JP7295047 B2 JP 7295047B2 JP 2020008267 A JP2020008267 A JP 2020008267A JP 2020008267 A JP2020008267 A JP 2020008267A JP 7295047 B2 JP7295047 B2 JP 7295047B2
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- 239000004065 semiconductor Substances 0.000 title claims description 211
- 239000012535 impurity Substances 0.000 claims description 45
- 230000015556 catabolic process Effects 0.000 claims description 28
- 239000010410 layer Substances 0.000 description 177
- 239000011229 interlayer Substances 0.000 description 27
- 238000009792 diffusion process Methods 0.000 description 23
- 238000010586 diagram Methods 0.000 description 13
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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Description
図9(b)は、図9(a)中に示すC-C線に沿った断面図である。
図9(c)は、図9(a)中に示すD-D線に沿った断面図である。
図9(d)は、図9(a)中に示すE-E線に沿った断面図である。
Claims (13)
- 半導体部と、
前記半導体部の裏面上に設けられた第1電極と、
前記半導体部の表面上に設けられた第2電極と、
前記第2電極と前記半導体部との間において、前記半導体部のトレンチの内部に設けられ、前記トレンチ内の第1絶縁部により前記半導体部から電気的に絶縁され、前記第2電極との間の第2絶縁部により前記第2電極から電気的に絶縁された第1制御電極と、
前記トレンチ内において、前記第1制御電極と前記第1電極との間の距離よりも前記第1電極に近い位置に設けられ、前記トレンチ内の第3絶縁部により前記半導体部から電気的に絶縁され、前記第1制御電極との間の第4絶縁部により前記第1制御電極から電気的に絶縁された第2制御電極と、
前記半導体部の前記表面側に設けられ、前記第2電極に電気的に接続されたダイオード素子と、
前記半導体部の前記表面を覆う絶縁膜上に設けられ、前記ダイオード素子に直列接続された抵抗素子と、
前記ダイオード素子と前記抵抗素子とを電気的に接続し、前記第2制御電極に電気的に接続された第1配線と、
前記抵抗素子と前記半導体部とを電気的に接続した第2配線と、
を備え、
前記半導体部は、第1導電形の第1半導体層と、第2導電形の第2半導体層と、前記第1導電形の第3半導体層と、を含み、
前記第1半導体層は、前記第1電極と前記第2電極との間、前記第1電極と前記ダイオード素子との間、および、前記第1電極と前記抵抗素子との間に位置し、前記第2配線を介して前記抵抗素子に電気的に接続され、
前記第2半導体層は、前記第1半導体層と前記第2電極との間に設けられ、前記第1絶縁部を介して前記第1制御電極に向き合い、
前記第3半導体層は、前記第2半導体層と前記第2電極との間に選択的に設けられ、前記第1絶縁部に接する位置に配置され、前記第2電極に電気的に接続され、
前記ダイオード素子は、前記抵抗素子から前記第2電極に流れる電流の方向に対して逆方向の整流性を有するように配置された半導体装置。 - 前記ダイオード素子は、前記半導体部中に設けられた前記第2導電形の第4半導体層と、前記第1導電形の第5半導体層と、前記第2導電形の第6半導体層と、を含み、
前記第4半導体層は、前記第2電極に電気的に接続され、
前記第5半導体層は、前記第4半導体層中に設けられ、前記第1配線に電気的に接続され、
前記第6半導体層は、前記第4半導体層と前記第5半導体層との間に設けられ、前記第4半導体層の第2導電形不純物よりも高濃度の第2導電形不純物を含む請求項1記載の半導体装置。 - 前記ダイオード素子は、前記絶縁膜上に設けられ、前記第1導電形の第5半導体層と、前記第2導電形の第6半導体層と、前記第5半導体層と前記第6半導体層との間に位置する第7半導体層と、を含み、
前記第5半導体層は、前記第1配線に電気的に接続され、前記第6半導体層は、前記第2電極に電気的に接続され、
前記第7半導体層は、前記第5半導体層および前記第6半導体層に接し、前記第5半導体層の第1導電形不純物よりも低濃度の第1導電形不純物、もしくは、前記第6半導体層の第2導電形不純物よりも低濃度の第2導電形不純物を含む請求項1記載の半導体装置。 - 前記トレンチ内において、前記第1電極と前記第2制御電極との間に設けられ、前記第3絶縁部により前記半導体部から電気的に絶縁され、前記第2電極に電気的に接続された第3電極をさらに備えた請求項1~3のいずれか1つに記載の半導体装置。
- 前記ダイオード素子の前記第7半導体層は、アバランシェ降伏が支配的となる不純物濃度と、ツエナー降伏が支配的となる不純物濃度と、の間の濃度の第2導電形不純物を含む請求項3記載の半導体装置。
- 前記半導体部は、前記抵抗素子と第1半導体層との間に設けられた第2導電形の第8半導体層をさらに含み、
前記絶縁膜は、前記第8半導体層と前記抵抗素子との間に位置する部分を有する請求項1~5のいずれか1つに記載の半導体装置。 - 前記第2半導体層は、前記半導体部の表面に沿った方向に前記第2電極よりも外側に延出した延出部を有し、
ダイオード素子は、前記第2半導体層の前記延出部に設けられた前記第1導電形の第5半導体層と、前記第2導電形の第6半導体層と、を含み、
前記延出部は、前記第1半導体層と前記第1配線との間に位置し、
前記第5半導体層は、前記延出部と前記第1配線との間に位置し、前記第1配線に電気的に接続され、
前記第6半導体層は、前記延出部と前記第5半導体層との間に設けられ、前記第2半導体層の第2導電形不純物よりも高濃度の第2導電形不純物を含む請求項1記載の半導体装置。 - 前記抵抗素子は、第1導電形の第1抵抗部と、第2導電形の第2抵抗部と、を含み、
前記第1抵抗部および前記第2抵抗部は、それぞれ、前記絶縁膜に沿って延在し、前記第1配線および前記第2配線に電気的に接続される請求項1~7のいずれか1つに記載の半導体装置。 - 半導体部と、
前記半導体部の裏面上に設けられた第1電極と、
前記半導体部の表面上に設けられた第2電極と、
前記第2電極と前記半導体部との間において、前記半導体部のトレンチの内部に設けられ、前記トレンチ内の第1絶縁部により前記半導体部から電気的に絶縁され、前記第2電極との間の第2絶縁部により前記第2電極から電気的に絶縁された第1制御電極と、
前記トレンチ内において、前記第1制御電極と前記第1電極との間の距離よりも前記第1電極に近い位置に設けられ、前記トレンチ内の第3絶縁部により前記半導体部から電気的に絶縁され、前記第1制御電極との間の第4絶縁部により前記第1制御電極から電気的に絶縁された第2制御電極と、
前記半導体部の前記表面側に設けられ、前記第2電極に電気的に接続されたダイオード素子と、
前記半導体部の前記表面を覆う絶縁膜上に設けられ、前記ダイオード素子に直列接続された抵抗素子と、
前記ダイオード素子と前記抵抗素子とを電気的に接続し、前記第2制御電極に電気的に接続された第1配線と、
前記抵抗素子と前記半導体部とを電気的に接続した第2配線と、
を備え、
前記半導体部は、第1導電形の第1半導体層と、第2導電形の第2半導体層と、前記第1導電形の第3半導体層と、を含み、
前記第1半導体層は、前記第1電極と前記第2電極との間、前記第1電極と前記ダイオード素子との間、および、前記第1電極と前記抵抗素子との間に位置し、前記第2配線を介して前記抵抗素子に電気的に接続され、
前記第2半導体層は、前記第1半導体層と前記第2電極との間に設けられ、前記第1絶縁部を介して前記第1制御電極に向き合い、
前記第3半導体層は、前記第2半導体層と前記第2電極との間に選択的に設けられ、前記第1絶縁部に接する位置に配置され、前記第2電極に電気的に接続され、
前記ダイオード素子は、第2導電形の第4半導体層と、第1導電形の第5半導体層と、を含み、前記第4半導体層は前記第2電極に電気的に接続され、前記第5半導体層は前記第1配線に電気的に接続された半導体装置。 - 前記第4半導体層は前記半導体部中に設けられ、
前記第5半導体層は前記第4半導体層中に設けられた、請求項9記載の半導体装置。 - 前記ダイオード素子は、前記半導体部中に設けられた前記第2導電形の第6半導体層と、をさらに含み、
前記第6半導体層は、前記第4半導体層と前記第5半導体層との間に設けられ、前記第4半導体層の第2導電形不純物よりも高濃度の第2導電形不純物を含む請求項10記載の半導体装置。 - 前記第4半導体層と前記第5半導体層は前記絶縁膜上に設けられた、請求項9記載の半導体装置。
- 前記ダイオード素子は、前記絶縁膜上に設けられ、前記第4半導体層と前記第5半導体層との間に設けられた前記第2導電形の第7半導体層 と、をさらに含み、
前記第7半導体層は、前記第4半導体層及び前記第5半導体層に電気的に接続され、前記第5半導体層の第1導電形不純物よりも低濃度の第1導電形不純物、もしくは、前記第4半導体層の第2導電形不純物よりも低濃度の第2導電形不純物を含む請求項12記載の半導体装置。
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