JP7293176B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7293176B2 JP7293176B2 JP2020153000A JP2020153000A JP7293176B2 JP 7293176 B2 JP7293176 B2 JP 7293176B2 JP 2020153000 A JP2020153000 A JP 2020153000A JP 2020153000 A JP2020153000 A JP 2020153000A JP 7293176 B2 JP7293176 B2 JP 7293176B2
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- terminal
- electrode
- electrically connected
- semiconductor device
- transistor
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- 239000004065 semiconductor Substances 0.000 title claims description 222
- 239000011324 bead Substances 0.000 claims description 7
- 229910000859 α-Fe Inorganic materials 0.000 claims description 7
- 108090000699 N-Type Calcium Channels Proteins 0.000 claims description 3
- 102000004129 N-Type Calcium Channels Human genes 0.000 claims description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 238000010586 diagram Methods 0.000 description 23
- 239000003990 capacitor Substances 0.000 description 15
- 229910002601 GaN Inorganic materials 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000003071 parasitic effect Effects 0.000 description 8
- 239000010949 copper Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000009499 grossing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
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Description
実施形態の半導体装置は、第1電極と、第2電極と、第1制御電極と、を有するn型チャネルノーマリーオフトランジスタと、第2電極に電気的に接続された第3電極と、第4電極と、第2制御電極と、を有するノーマリーオントランジスタと、第2制御電極に電気的に接続された第1アノードと、第3電極に電気的に接続された第1カソードと、を有する第1ダイオードと、第1電極に電気的に接続された第2アノードと、第2電極に電気的に接続された第2カソードと、を有するツェナーダイオードと、を有する半導体パッケージと、半導体パッケージに設けられ、第1電極に電気的に接続された第1端子と、半導体パッケージに設けられ、第1電極に電気的に接続され、それぞれ第1方向に並ぶ複数の第2端子と、半導体パッケージに設けられ、第4電極に電気的に接続された第3端子と、半導体パッケージに設けられ、第1制御電極に電気的に接続されたそれぞれ第1方向に並ぶ複数第4端子と、半導体パッケージに設けられ、第2制御電極に電気的に接続され、それぞれ第1方向に並ぶ複数の第5端子と、を備える半導体装置
本実施形態の半導体装置は、第1電極と、第2電極と、第1制御電極と、を有するn型ノーマリーオフトランジスタと、第2電極に電気的に接続された第3電極と、第4電極と、第2制御電極と、を有するノーマリーオントランジスタと、第2制御電極に電気的に接続された第1アノードと、第1電極に電気的に接続された第1カソードと、を有する第1ダイオードと、第1電極に電気的に接続された第2アノードと、第2電極に電気的に接続された第2カソードと、を有するツェナーダイオードと、を有する半導体パッケージと、半導体パッケージに設けられ、第1電極に電気的に接続された第1端子と、半導体パッケージに設けられ、第1電極に電気的に接続され、それぞれ第1方向に並ぶ複数の第2端子と、半導体パッケージに設けられ、第4電極に電気的に接続された第3端子と、半導体パッケージに設けられ、第1制御電極に電気的に接続された第4端子と、半導体パッケージに設けられ、第2制御電極に電気的に接続され、それぞれ第1方向に並ぶ複数の第5端子と、を備える。ここで、第1実施形態と重複する内容の記載は省略する。
本実施形態の半導体装置は、第1電極と、第2電極と、第1制御電極と、を有するp型チャネルノーマリーオフトランジスタ(以下p型ノーマリーオフトランジスタ)と、第2電極に電気的に接続された第3電極と、第4電極と、第2制御電極と、を有するノーマリーオントランジスタと、を有する半導体パッケージと、半導体パッケージに設けられ、第1電極に電気的に接続された第1端子と、半導体パッケージに設けられ、第2電極又は第3電極に電気的に接続され、第1方向に並ぶ第2端子と、半導体パッケージに設けられ、第4電極に電気的に接続された第3端子と、半導体パッケージに設けられ、第1制御電極に電気的に接続され第1方向に並ぶ第4端子と、半導体パッケージに設けられ、第2制御電極に電気的に接続され、それぞれ第1方向に並ぶ第5端子と、を備える。ここで、第1及び第2実施形態と重複する内容の記載は省略する。
本実施形態の半導体装置は、第3端子103および第1端子101が分離されていない点で、第1乃至第3実施形態の半導体装置と異なっている。ここで、第1乃至第3実施形態と重複する内容の記載は省略する。
本実施形態の半導体装置は、ボンディングワイヤの代わりに金属プレートを用いて電気的接続を行なっている点で、第1乃至第4実施形態の半導体装置と異なっている。ここで、第1乃至第4実施形態と重複する内容の記載は省略する。
本実施形態の半導体装置は、第1ダイオード40及びツェナーダイオード80が半導体パッケージ110内に設けられていない点で、第3実施形態の半導体装置と異なっている。ここで、第1乃至第5実施形態と重複する内容の記載は省略する。
上記の各実施形態は、下記のようにまとめられる。
第1電極と、第2電極と、第1制御電極と、を有するn型ノーマリーオフトランジスタと、
前記第2電極に電気的に接続された第3電極と、第4電極と、第2制御電極と、を有するノーマリーオントランジスタと、
前記第2制御電極に電気的に接続された第1アノードと、前記第1電極又は前記第3電極に電気的に接続された第1カソードと、を有する第1ダイオードと、
前記第1電極に電気的に接続された第2アノードと、前記第2電極に電気的に接続された第2カソードと、を有するツェナーダイオードと、
を有する半導体パッケージと、
前記半導体パッケージに設けられ、前記第1電極に電気的に接続された第1端子と、
前記半導体パッケージに設けられ、前記第1電極に電気的に接続され、それぞれ第1方向に並ぶ複数の第2端子と、
前記半導体パッケージに設けられ、前記第4電極に電気的に接続された第3端子と、
前記半導体パッケージに設けられ、前記第1制御電極に電気的に接続された第4端子と、
前記半導体パッケージに設けられ、前記第2制御電極に電気的に接続され、それぞれ前記第1方向に並ぶ複数の第5端子と、
を備える半導体装置。
第6端子と、第7端子と、を有するチップ抵抗器又はチップフェライトビーズの前記第6端子が、前記複数の第2端子のいずれか一つに電気的に接続され、前記第7端子が、前記複数の第5端子のいずれか一つに電気的に接続されている第1項記載の半導体装置。
第3アノードと、第3カソードと、を有する第1チップダイオードの前記第3カソードが、前記複数の第2端子のいずれか一つに電気的に接続され、
前記第3アノードが、前記複数の第5端子のいずれか一つに電気的に接続され、
第6端子と、第7端子と、を有するチップ抵抗器又はチップフェライトビーズの前記第6端子が、前記複数の第2端子のいずれか一つに電気的に接続され、
第4アノードと、第4カソードと、を有する第2チップダイオードの前記第4カソードが、前記複数の第5端子のいずれか一つに電気的に接続され、
前記第7端子と前記第4カソードが電気的に接続されている、
第1項記載の半導体装置。
前記複数の第2端子のいずれか一つと前記複数の第5端子のいずれか一つが、配線により電気的に接続されている、
第1項記載の半導体装置。
第8端子と、第9端子と、を有するコンデンサの前記第8端子が、前記第5端子に電気的に接続されている、
第1項記載の半導体装置。
第10端子と、第11端子と、を有する抵抗の前記第10端子が、前記第4端子に電気的に接続され、
前記第11端子が、前記第9端子に電気的に接続され、
第5アノードと、第5カソードと、を有する第2ダイオードの前記第5アノードが、前記第11端子に電気的に接続され、
前記第5カソードが前記第10端子に電気的に接続され、
前記第2ダイオードが、前記抵抗に電気的に並列に接続されている、
第5項記載の半導体装置。
前記複数の第2端子及び前記複数の第5端子は、前記半導体パッケージの端部に設けられている第1項乃至第6項いずれか一項記載の半導体装置。
前記複数の第2端子と前記複数の第5端子の間には、前記第1端子、前記第3端子及び前記第4端子は設けられていない第1項乃至第7項いずれか一項記載の半導体装置。
前記複数の第2端子は、前記第1端子、前記第3端子及び前記第4端子を介さずに、前記複数の第5端子と隣接している第1項乃至第7項いずれか一項記載の半導体装置。
前記複数の第2端子と前記複数の第4端子の間には、前記第1端子、前記第3端子及び前記第5端子は設けられていない第1項乃至第7項いずれか一項記載の半導体装置。
前記複数の第2端子は、前記第1端子、前記第3端子及び前記第5端子を介さずに、前記複数の第4端子と隣接している第1項乃至第7項いずれか一項記載の半導体装置。
11 第1電極
12 第2電極
13 第1制御電極
14 ボディダイオード
15 アノード
16 カソード
20 ノーマリーオントランジスタ
21 第3電極
22 第4電極
23 第2制御電極
30 p型ノーマリーオフトランジスタ
31 第1電極
32 第2電極
33 第1制御電極
34 ボディダイオード
35 アノード
36 カソード
40 第1ダイオード
41 第1アノード
42 第1カソード
70 第2ダイオード
71 第5アノード
72 第5カソード
75 抵抗
76 第10端子
77 第11端子
80 ツェナーダイオード
81 第2アノード
82 第2カソード
85 コンデンサ
86 第8端子
87 第9端子
100 半導体装置
101 第1端子
102 第2端子
103 第3端子
104 第4端子
105 第5端子
110 半導体パッケージ
150 チップ抵抗器
152 第6端子
154 第7端子
156 チップフェライトビーズ
160 第1チップダイオード
162 第3アノード
164 第3カソード
170 第2チップダイオード
172 第4アノード
174 第4カソード
180 配線
200 半導体装置
210 半導体装置
220 半導体装置
230 半導体装置
240 半導体装置
Claims (7)
- 第1電極と、第2電極と、第1制御電極と、を有するn型チャネルノーマリーオフトランジスタと、
前記第2電極に電気的に接続された第3電極と、第4電極と、第2制御電極と、を有するノーマリーオントランジスタと、
前記第2制御電極に電気的に接続された第1アノードと、前記第3電極に電気的に接続された第1カソードと、を有する第1ダイオードと、
前記第1電極に電気的に接続された第2アノードと、前記第2電極に電気的に接続された第2カソードと、を有するツェナーダイオードと、
を有する半導体パッケージと、
前記半導体パッケージに設けられ、前記第1電極に電気的に接続された第1端子と、
前記半導体パッケージに設けられ、前記第1電極に電気的に接続され、それぞれ第1方向に並ぶ複数の第2端子と、
前記半導体パッケージに設けられ、前記第4電極に電気的に接続された第3端子と、
前記半導体パッケージに設けられ、前記第1制御電極に電気的に接続されたそれぞれ第1方向に並ぶ複数第4端子と、
前記半導体パッケージに設けられ、前記第2制御電極に電気的に接続され、それぞれ第1方向に並ぶ複数の第5端子と、
を備える半導体装置。 - 第6端子と、第7端子と、を有するチップ抵抗器又はチップフェライトビーズの前記第6端子が、前記複数の第2端子のいずれか一つに電気的に接続され、前記第7端子が、前記複数の第5端子のいずれか一つに電気的に接続されている請求項1記載の半導体装置。
- 前記複数の第2端子のいずれか一つと前記複数の第5端子のいずれか一つが、配線により電気的に接続されている、請求項1記載の半導体装置。
- 第1電極と、第2電極と、第1制御電極と、を有するp型チャネルノーマリーオフトランジスタと、
前記第2電極に電気的に接続された第3電極と、第4電極と、第2制御電極と、を有するノーマリーオントランジスタと、
を有する半導体パッケージと、
前記半導体パッケージに設けられ、前記第1電極に電気的に接続された第1端子と、
前記半導体パッケージに設けられ、前記第2電極又は前記第3電極に電気的に接続され、第1方向に並ぶ第2端子と、
前記半導体パッケージに設けられ、前記第4電極に電気的に接続された第3端子と、
前記半導体パッケージに設けられ、前記第1制御電極に電気的に接続され、前記第1方向に並ぶ第4端子と、
前記半導体パッケージに設けられ、前記第2制御電極に電気的に接続され、前記第1方向に並ぶ第5端子と、
を備える半導体装置。 - 前記第2制御電極に電気的に接続された第1アノードと、前記第1電極に電気的に接続された第1カソードと、を有する第1ダイオードをさらに備える請求項4記載の半導体装置。
- 前記半導体パッケージが前記第1ダイオードを有する請求項5記載の半導体装置。
- 前記半導体パッケージは、前記第1電極に電気的に接続された第2アノードと、前記第2電極に電気的に接続された第2カソードと、を有するツェナーダイオードをさらに有する請求項4乃至請求項6いずれか一項記載の半導体装置。
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JP2014512765A (ja) | 2011-04-13 | 2014-05-22 | パワー・インテグレーションズ・インコーポレーテッド | ノーマリーオフ装置およびノーマリーオン装置を含むカスケードスイッチ並びに本スイッチを備える回路 |
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US20220084916A1 (en) | 2022-03-17 |
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