JP7288969B2 - 埋設された粒子停止層を含む上側金属被膜構造を有するパワー半導体デバイス - Google Patents
埋設された粒子停止層を含む上側金属被膜構造を有するパワー半導体デバイス Download PDFInfo
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- JP7288969B2 JP7288969B2 JP2021555202A JP2021555202A JP7288969B2 JP 7288969 B2 JP7288969 B2 JP 7288969B2 JP 2021555202 A JP2021555202 A JP 2021555202A JP 2021555202 A JP2021555202 A JP 2021555202A JP 7288969 B2 JP7288969 B2 JP 7288969B2
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Description
本出願は、2019年3月14日に出願された米国特許出願番号16/353,313号の優先権を主張し、その内容全体が参照により本明細書に組み込まれる。
Claims (9)
- ワイドバンドギャップ半導体層構造と、
前記ワイドバンドギャップ半導体層構造の上面上の上側金属被膜と
を備える半導体デバイスであって、
前記上側金属被膜は、
前記ワイドバンドギャップ半導体層構造の上面上の第1の導電性拡散障壁層と、
前記第1の導電性拡散障壁層の上面上の導電性コンタクト層と、
前記導電性コンタクト層内の粒子停止層であって、前記導電性コンタクト層を上部及び下部に分割する粒子停止層と
を含み、
前記粒子停止層は、前記導電性コンタクト層の前記下部の上面上の場所にのみ形成されている不連続層である、半導体デバイス。 - 前記ワイドバンドギャップ半導体層構造上で延伸する複数のゲートフィンガーと、
前記ゲートフィンガー上の金属間誘電体パターンであって、前記金属間誘電体パターンは、それぞれの前記ゲートフィンガーを覆う複数の誘電体フィンガーを含み、開口部を含む金属間誘電体パターンと
を更に備える、請求項1に記載の半導体デバイス。 - 前記半導体デバイスは、MOSFETを備え、前記ワイドバンドギャップ半導体層構造に、複数のソース領域が設けられ、前記導電性コンタクト層は、前記ワイドバンドギャップ半導体層構造の第1の側のソースコンタクト層であり、前記ソース領域に電気的に接続され、前記半導体デバイスは、前記第1の側の反対側にある前記ワイドバンドギャップ半導体層構造の第2の側にドレインコンタクトを更に備える、請求項2に記載の半導体デバイス。
- 前記粒子停止層は、第2の導電性拡散障壁層を備える、請求項1~3の何れか一項に記載の半導体デバイス。
- 前記粒子停止層は、非平面の上面を有する、請求項1~4の何れか一項に記載の半導体デバイス。
- 前記粒子停止層は、金属酸化物層を備える、請求項1~5の何れか一項に記載の半導体デバイス。
- 前記粒子停止層は、前記導電性コンタクト層の上側30%内に埋設されている、請求項3~6の何れか一項に記載の半導体デバイス。
- 前記粒子停止層は、第1の粒子停止層を備え、前記半導体デバイスは、前記導電性コンタクト層内に埋設された第2の粒子停止層を更に備える、請求項1~7の何れか一項に記載の半導体デバイス。
- 前記導電性コンタクト層の前記下部及び前記上部の両方が、少なくとも2.0ミクロンの平均厚さを有し、同じ材料で形成されている、請求項3~8の何れか一項に記載の半導体デバイス。
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US16/353,313 | 2019-03-14 | ||
US16/353,313 US10847647B2 (en) | 2019-03-14 | 2019-03-14 | Power semiconductor devices having top-side metallization structures that include buried grain stop layers |
PCT/US2020/018730 WO2020185362A1 (en) | 2019-03-14 | 2020-02-19 | Power semiconductor devices having top-side metallization structures that include buried grain stop layers |
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JP7288969B2 true JP7288969B2 (ja) | 2023-06-08 |
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EP (1) | EP3939090A1 (ja) |
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Citations (3)
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JP2000100815A (ja) | 1998-09-18 | 2000-04-07 | Denso Corp | アルミニウム配線を有する半導体装置及びその製造方法 |
JP2008028079A (ja) | 2006-07-20 | 2008-02-07 | Denso Corp | 半導体装置およびその製造方法 |
JP2015065460A (ja) | 2014-11-21 | 2015-04-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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US8907350B2 (en) * | 2010-04-28 | 2014-12-09 | Cree, Inc. | Semiconductor devices having improved adhesion and methods of fabricating the same |
US8912573B2 (en) * | 2013-02-26 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device containing HEMT and MISFET and method of forming the same |
JP6164636B2 (ja) * | 2013-03-05 | 2017-07-19 | ローム株式会社 | 半導体装置 |
JP2016162975A (ja) | 2015-03-04 | 2016-09-05 | 株式会社東芝 | 半導体装置 |
JP2017135283A (ja) | 2016-01-28 | 2017-08-03 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP6690985B2 (ja) | 2016-02-24 | 2020-04-28 | 株式会社神戸製鋼所 | オーミック電極 |
US10615273B2 (en) * | 2017-06-21 | 2020-04-07 | Cree, Inc. | Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity |
JP7127279B2 (ja) * | 2017-12-14 | 2022-08-30 | 富士電機株式会社 | 炭化シリコン半導体装置及びその製造方法 |
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- 2019-03-14 US US16/353,313 patent/US10847647B2/en active Active
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- 2020-02-19 JP JP2021555202A patent/JP7288969B2/ja active Active
- 2020-02-19 WO PCT/US2020/018730 patent/WO2020185362A1/en active Application Filing
- 2020-02-19 CN CN202080021107.8A patent/CN113597680B/zh active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000100815A (ja) | 1998-09-18 | 2000-04-07 | Denso Corp | アルミニウム配線を有する半導体装置及びその製造方法 |
JP2008028079A (ja) | 2006-07-20 | 2008-02-07 | Denso Corp | 半導体装置およびその製造方法 |
JP2015065460A (ja) | 2014-11-21 | 2015-04-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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US20200295174A1 (en) | 2020-09-17 |
JP2022525744A (ja) | 2022-05-19 |
CN113597680A (zh) | 2021-11-02 |
CN113597680B (zh) | 2024-05-24 |
US10847647B2 (en) | 2020-11-24 |
WO2020185362A1 (en) | 2020-09-17 |
EP3939090A1 (en) | 2022-01-19 |
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