JP2016162975A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2016162975A JP2016162975A JP2015042851A JP2015042851A JP2016162975A JP 2016162975 A JP2016162975 A JP 2016162975A JP 2015042851 A JP2015042851 A JP 2015042851A JP 2015042851 A JP2015042851 A JP 2015042851A JP 2016162975 A JP2016162975 A JP 2016162975A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 168
- 239000002184 metal Substances 0.000 claims abstract description 168
- 230000004888 barrier function Effects 0.000 claims description 38
- 238000007747 plating Methods 0.000 claims description 35
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 abstract description 12
- 230000002265 prevention Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 177
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】実施形態の半導体装置は、半導体層と、半導体層上に設けられる第1の金属層と、第1の金属層上に設けられ、第1の金属層よりもイオン化傾向の小さい金属膜と、金属膜上に設けられ、金属膜よりもイオン化傾向の大きい第2の金属層と、第2の金属層上に設けられ、第2の金属層よりもイオン化傾向の小さい第3の金属層と、を備える。
【選択図】図1
Description
を備える。
本実施形態の半導体装置は、半導体層と、半導体層上に設けられる第1の金属層と、第1の金属層上に設けられ、第1の金属層よりイオン化傾向の小さい金属膜と、金属膜上に設けられ、金属膜よりイオン化傾向の大きい第2の金属層と、第2の金属層上に設けられ、第2の金属層よりイオン化傾向の小さい第3の金属層と、を備える。
本実施形態の半導体装置は、半導体層と、半導体層上に設けられる第1の金属層と、第1の金属層上に設けられる半導体膜と、半導体膜上に設けられる第2の金属層と、第2の金属層上に設けられ、第2の金属層よりもイオン化傾向の小さい第3の金属層と、を備える。
本実施形態の半導体装置は、半導体層と、半導体層上に設けられ、アルミニウム(Al)を含む第1の金属層と、第1の金属層上に設けられ、チタン(Ti)、窒化チタン(TiN)、タングステン(W)、窒化タングステン(WN)、モリブデン(Mo)、ニッケル(Ni)、及び、銅(Cu)から成る群より選ばれる金属を含むバリア層と、バリア層上に設けられ、アルミニウム(Al)を含む第2の金属層と、第2の金属層上に設けられ、ニッケル(Ni)を含むめっき膜と、を備える。以下、第1の実施形態と重複する内容については一部記述を省略する。
18 n+型エミッタ層(半導体層)
26 エミッタ電極
26b 下部金属層(第1の金属層)
26c 上部金属層(第2の金属層)
28 表面金属層(第3の金属層、めっき膜)
30 バリア層(金属膜)
40 バリア層(半導体膜)
50 バリア層
100 IGBT(半導体装置)
200 IGBT(半導体装置)
300 IGBT(半導体装置)
Claims (6)
- 半導体層と、
前記半導体層上に設けられる第1の金属層と、
前記第1の金属層上に設けられ、前記第1の金属層よりイオン化傾向の小さい金属膜と、
前記金属膜上に設けられ、前記金属膜よりイオン化傾向の大きい第2の金属層と、
前記第2の金属層上に設けられ、前記第2の金属層よりイオン化傾向の小さい第3の金属層と、
を備える半導体装置。 - 前記金属膜のイオン化傾向が前記第3の金属層のイオン化傾向より小さい請求項1記載の半導体装置。
- 前記第3の金属層がめっき膜である請求項1又は請求項2記載の半導体装置。
- 前記第1の金属層及び前記第2の金属層がアルミニウム(Al)を含み、前記第3の金属層がニッケル(Ni)を含む請求項1乃至請求項3いずれか一項記載の半導体装置。
- 半導体層と、
前記半導体層上に設けられる第1の金属層と、
前記第1の金属層上に設けられる半導体膜と、
前記半導体膜上に設けられる第2の金属層と、
前記第2の金属層上に設けられ、前記第2の金属層よりイオン化傾向の小さい第3の金属層と、
を備える半導体装置。 - 半導体層と、
前記半導体層上に設けられ、アルミニウム(Al)を含む第1の金属層と、
前記第1の金属層上に設けられ、チタン(Ti)、窒化チタン(TiN)、タングステン(W)、窒化タングステン(WN)、モリブデン(Mo)、ニッケル(Ni)、及び、銅(Cu)から成る群より選ばれる金属を含むバリア層と、
前記バリア層上に設けられ、アルミニウム(Al)を含む第2の金属層と、
前記第2の金属層上に設けられ、ニッケル(Ni)を含むめっき膜と、
を備える半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015042851A JP2016162975A (ja) | 2015-03-04 | 2015-03-04 | 半導体装置 |
US14/831,741 US20160260810A1 (en) | 2015-03-04 | 2015-08-20 | Semiconductor device |
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---|---|---|---|
JP2015042851A JP2016162975A (ja) | 2015-03-04 | 2015-03-04 | 半導体装置 |
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Publication Number | Publication Date |
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JP2016162975A true JP2016162975A (ja) | 2016-09-05 |
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JP2015042851A Pending JP2016162975A (ja) | 2015-03-04 | 2015-03-04 | 半導体装置 |
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US (1) | US20160260810A1 (ja) |
JP (1) | JP2016162975A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021097171A (ja) * | 2019-12-18 | 2021-06-24 | 株式会社デンソー | 半導体装置 |
JP7486407B2 (ja) | 2020-11-27 | 2024-05-17 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017118060A (ja) * | 2015-12-25 | 2017-06-29 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP2018182032A (ja) * | 2017-04-11 | 2018-11-15 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US10847647B2 (en) | 2019-03-14 | 2020-11-24 | Cree, Inc. | Power semiconductor devices having top-side metallization structures that include buried grain stop layers |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0562928A (ja) * | 1991-09-03 | 1993-03-12 | Nec Corp | 化合物半導体装置及びその製造方法 |
JP2008028079A (ja) * | 2006-07-20 | 2008-02-07 | Denso Corp | 半導体装置およびその製造方法 |
JP2010171365A (ja) * | 2008-12-26 | 2010-08-05 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2010251719A (ja) * | 2009-03-23 | 2010-11-04 | Fuji Electric Systems Co Ltd | 半導体装置の製造方法 |
JP2012021178A (ja) * | 2010-07-12 | 2012-02-02 | Fuji Electric Co Ltd | 無電解ニッケルメッキ膜の製造方法およびそれを用いた磁気記録媒体用基板 |
-
2015
- 2015-03-04 JP JP2015042851A patent/JP2016162975A/ja active Pending
- 2015-08-20 US US14/831,741 patent/US20160260810A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0562928A (ja) * | 1991-09-03 | 1993-03-12 | Nec Corp | 化合物半導体装置及びその製造方法 |
JP2008028079A (ja) * | 2006-07-20 | 2008-02-07 | Denso Corp | 半導体装置およびその製造方法 |
JP2010171365A (ja) * | 2008-12-26 | 2010-08-05 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2010251719A (ja) * | 2009-03-23 | 2010-11-04 | Fuji Electric Systems Co Ltd | 半導体装置の製造方法 |
JP2012021178A (ja) * | 2010-07-12 | 2012-02-02 | Fuji Electric Co Ltd | 無電解ニッケルメッキ膜の製造方法およびそれを用いた磁気記録媒体用基板 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021097171A (ja) * | 2019-12-18 | 2021-06-24 | 株式会社デンソー | 半導体装置 |
JP7310590B2 (ja) | 2019-12-18 | 2023-07-19 | 株式会社デンソー | 半導体装置 |
JP7486407B2 (ja) | 2020-11-27 | 2024-05-17 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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