JP7282710B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP7282710B2 JP7282710B2 JP2020050007A JP2020050007A JP7282710B2 JP 7282710 B2 JP7282710 B2 JP 7282710B2 JP 2020050007 A JP2020050007 A JP 2020050007A JP 2020050007 A JP2020050007 A JP 2020050007A JP 7282710 B2 JP7282710 B2 JP 7282710B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gap
- substrate
- semiconductor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 105
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000005530 etching Methods 0.000 claims description 84
- 239000000758 substrate Substances 0.000 claims description 71
- 235000020637 scallop Nutrition 0.000 claims description 35
- 241000237503 Pectinidae Species 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 27
- 239000011347 resin Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 description 8
- 241000237509 Patinopecten sp. Species 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 5
- 229910018503 SF6 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Dicing (AREA)
- Drying Of Semiconductors (AREA)
- Die Bonding (AREA)
Description
実施形態の半導体装置は、基板と、基板の上に設けられた電極層と、電極層の上に設けられ、基板の基板面に対して第1角度を取る第1側面部と、第1側面部の下に設けられ、基板面に対して第1角度より小さな第2角度を取る第2側面部と、を有する半導体チップと、電極層及び半導体チップの周囲に設けられ、第1側面部及び第2側面部と接している樹脂と、を備える。
4 基板面
6 電極層
8 第2開口部
10 半導体チップ
12 第1側面部
14 第1スキャロップ
16 第2側面部
18 第2スキャロップ
20 樹脂
60 マスク
62 第1開口部
70 半導体基板
72 第1部分
74 第1間隙
76 第2部分
78 第2間隙
80 間隙
82 保護膜
90 ダイシングテープ
100 半導体装置
Claims (4)
- 電極層を下に有する半導体基板の上に設けられ、第1幅の第1開口部を有するマスクを用いて、前記第1開口部の下に設けられた、前記半導体基板の第1部分の第1エッチングを行うことにより、第1側面部を有する第1間隙を形成し、
前記第1間隙の下の前記半導体基板の第2部分の第2エッチングを行うことにより、第2側面部を有する、逆テーパー形状の第2間隙を形成し、
前記第2間隙を形成することにより前記半導体基板を分断して半導体チップを形成し、
前記電極層及び前記半導体チップを基板の上に配置し、
前記基板の上の前記半導体チップの周囲に樹脂を形成する、
半導体装置の製造方法であって、
前記第1エッチングは、異方性エッチングである第3エッチングと、前記第3エッチングの後に行われる、等方性エッチングである第4エッチングと、の繰り返しであり、
前記第2エッチングは、異方性エッチングである第5エッチングと、前記第5エッチングの後に行われる、等方性エッチングである第6エッチングと、の繰り返しであり、
前記第6エッチングの時間は、前記第4エッチングの時間より長く、
前記第6エッチングの時間は、前記繰り返しの度に所定時間追加されて長くなる、
半導体装置の製造方法。 - 前記第1エッチングを行うことにより、前記第1側面部に平行な方向において、第1ピッチで形成された複数の第1スキャロップを前記第1側面部に形成し、
前記第2エッチングを行うことにより、前記第2側面部に平行な方向において、第2ピッチで形成された複数の第2スキャロップを前記第2側面部に形成する、
請求項1記載の半導体装置の製造方法。 - 前記第2ピッチは前記第1ピッチより大きい、
請求項2記載の半導体装置の製造方法。 - 前記複数の第1スキャロップの第1ピッチは10μm以下であり、
前記複数の第2スキャロップの第2ピッチは10μm以下である、
請求項2又は請求項3記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020050007A JP7282710B2 (ja) | 2020-03-19 | 2020-03-19 | 半導体装置の製造方法 |
CN202010787426.1A CN113496963A (zh) | 2020-03-19 | 2020-08-07 | 半导体装置及其制造方法 |
US17/012,563 US11587840B2 (en) | 2020-03-19 | 2020-09-04 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020050007A JP7282710B2 (ja) | 2020-03-19 | 2020-03-19 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021150537A JP2021150537A (ja) | 2021-09-27 |
JP7282710B2 true JP7282710B2 (ja) | 2023-05-29 |
Family
ID=77748220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020050007A Active JP7282710B2 (ja) | 2020-03-19 | 2020-03-19 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11587840B2 (ja) |
JP (1) | JP7282710B2 (ja) |
CN (1) | CN113496963A (ja) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124431A (ja) | 2001-10-17 | 2003-04-25 | Sony Corp | ウェーハ状シート、チップ状電子部品、およびそれらの製造方法 |
JP2003163313A (ja) | 2001-09-13 | 2003-06-06 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
JP2006294688A (ja) | 2005-04-06 | 2006-10-26 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2006351950A (ja) | 2005-06-17 | 2006-12-28 | Rohm Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP2012182382A (ja) | 2011-03-02 | 2012-09-20 | Sekisui Chem Co Ltd | 半導体チップ、半導体パッケージおよび半導体パッケージの製造方法 |
JP2017120800A (ja) | 2015-12-28 | 2017-07-06 | 富士通株式会社 | 半導体素子、半導体素子の製造方法及び電子機器 |
JP2017139370A (ja) | 2016-02-04 | 2017-08-10 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法および電子部品実装構造体の製造方法ならびに電子部品実装構造体 |
JP2018137405A (ja) | 2017-02-23 | 2018-08-30 | パナソニックIpマネジメント株式会社 | 素子チップおよびその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06177178A (ja) * | 1992-12-01 | 1994-06-24 | Nissan Motor Co Ltd | 半導体チップの構造 |
JP3944915B2 (ja) * | 1996-10-17 | 2007-07-18 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US6759745B2 (en) | 2001-09-13 | 2004-07-06 | Texas Instruments Incorporated | Semiconductor device and manufacturing method thereof |
US7675153B2 (en) | 2005-02-02 | 2010-03-09 | Kabushiki Kaisha Toshiba | Semiconductor device having semiconductor chips stacked and mounted thereon and manufacturing method thereof |
JP4434977B2 (ja) | 2005-02-02 | 2010-03-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
US20110175209A1 (en) * | 2010-01-18 | 2011-07-21 | Seddon Michael J | Method of forming an em protected semiconductor die |
JP2013207279A (ja) | 2012-03-29 | 2013-10-07 | Toshiba Corp | 半導体装置の製造方法 |
TWI671812B (zh) * | 2013-11-13 | 2019-09-11 | 東芝股份有限公司 | 半導體晶片之製造方法、半導體晶片及半導體裝置 |
JP2016062967A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP2018049938A (ja) * | 2016-09-21 | 2018-03-29 | 株式会社東芝 | 半導体装置 |
KR20200034503A (ko) * | 2018-09-21 | 2020-03-31 | 삼성전자주식회사 | 기판 쏘잉 방법 및 반도체 칩의 싱귤레이션 방법 |
-
2020
- 2020-03-19 JP JP2020050007A patent/JP7282710B2/ja active Active
- 2020-08-07 CN CN202010787426.1A patent/CN113496963A/zh active Pending
- 2020-09-04 US US17/012,563 patent/US11587840B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003163313A (ja) | 2001-09-13 | 2003-06-06 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
JP2003124431A (ja) | 2001-10-17 | 2003-04-25 | Sony Corp | ウェーハ状シート、チップ状電子部品、およびそれらの製造方法 |
JP2006294688A (ja) | 2005-04-06 | 2006-10-26 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2006351950A (ja) | 2005-06-17 | 2006-12-28 | Rohm Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP2012182382A (ja) | 2011-03-02 | 2012-09-20 | Sekisui Chem Co Ltd | 半導体チップ、半導体パッケージおよび半導体パッケージの製造方法 |
JP2017120800A (ja) | 2015-12-28 | 2017-07-06 | 富士通株式会社 | 半導体素子、半導体素子の製造方法及び電子機器 |
JP2017139370A (ja) | 2016-02-04 | 2017-08-10 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法および電子部品実装構造体の製造方法ならびに電子部品実装構造体 |
JP2018137405A (ja) | 2017-02-23 | 2018-08-30 | パナソニックIpマネジメント株式会社 | 素子チップおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US11587840B2 (en) | 2023-02-21 |
US20210296193A1 (en) | 2021-09-23 |
JP2021150537A (ja) | 2021-09-27 |
CN113496963A (zh) | 2021-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5942212B2 (ja) | 半導体素子およびその製造方法、半導体モジュールおよびその製造方法、並びに、半導体パッケージ | |
JP6214172B2 (ja) | 高電子移動度トランジスタ及びその製造方法 | |
KR20200133630A (ko) | 집적회로 소자 및 그 제조 방법 | |
CN109390273B (zh) | 半导体器件 | |
TWI515859B (zh) | 內連線結構和其製作方法 | |
EP3255664A1 (en) | Packaging structure and packaging method thereof | |
CN106206415A (zh) | 用于形成半导体器件结构的互连结构的通孔轮廓的方法 | |
JP2016048760A (ja) | 半導体装置 | |
US9966311B2 (en) | Semiconductor device manufacturing method | |
CN105023909A (zh) | 提供再分布层(rdl)和硅通孔(tsv)的结构和方法 | |
US20090203171A1 (en) | Semiconductor device fabricating method | |
KR102521222B1 (ko) | 반도체 장치 및 이의 제조 방법 | |
JP7282710B2 (ja) | 半導体装置の製造方法 | |
US9245842B2 (en) | Semiconductor devices having guard ring structure and methods of manufacture thereof | |
JP2006229218A (ja) | 半導体デバイスの製造方法、および得られるデバイス | |
CN103489842B (zh) | 半导体封装结构 | |
JP5568824B2 (ja) | 半導体装置の製造方法 | |
JP2005260059A (ja) | 半導体装置、半導体ウェハおよび半導体装置の製造方法 | |
CN105122441A (zh) | 化合物半导体装置及其制造方法以及树脂密封型半导体装置 | |
JP2017143214A (ja) | 半導体装置の製造方法 | |
JP6560496B2 (ja) | 半導体装置 | |
WO2020252626A1 (zh) | 一种半导体结构及其制造方法 | |
WO2020252623A1 (zh) | 一种半导体结构及其制造方法 | |
JP2019207984A (ja) | 半導体装置およびその製造方法 | |
US20180269178A1 (en) | Wafer bonding methods and wafer-bonded structures |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211208 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221227 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20221222 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230213 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230418 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230517 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7282710 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |