JP7262594B2 - 塗布、現像装置 - Google Patents
塗布、現像装置 Download PDFInfo
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- JP7262594B2 JP7262594B2 JP2021540713A JP2021540713A JP7262594B2 JP 7262594 B2 JP7262594 B2 JP 7262594B2 JP 2021540713 A JP2021540713 A JP 2021540713A JP 2021540713 A JP2021540713 A JP 2021540713A JP 7262594 B2 JP7262594 B2 JP 7262594B2
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- 238000000576 coating method Methods 0.000 title claims description 147
- 239000011248 coating agent Substances 0.000 title claims description 136
- 238000004140 cleaning Methods 0.000 claims description 191
- 230000032258 transport Effects 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 60
- 238000010438 heat treatment Methods 0.000 claims description 50
- 238000007689 inspection Methods 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 174
- 239000007788 liquid Substances 0.000 description 31
- 101150075071 TRS1 gene Proteins 0.000 description 21
- 238000000034 method Methods 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 239000008367 deionised water Substances 0.000 description 9
- 229910021641 deionized water Inorganic materials 0.000 description 9
- 238000003860 storage Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000007921 spray Substances 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000004929 transmission Raman spectroscopy Methods 0.000 description 1
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
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Description
図1は、第1実施形態に係る塗布、現像装置の概略平面図である。図2は、第1実施形態に係る塗布、現像装置の概略側面図である。図3は、第1実施形態に係る処理ステーションの概略側面図である。図4は、第1実施形態に係る搬送ブロックの概略側面図である。
搬入出ステーションS1には、カセットCを載置可能な複数のカセット載置台11と、カセット載置台11から見て前方の壁面に設けられる複数の開閉部12と、開閉部12を介してカセットCからウエハWを取り出すための搬送部13とが設けられている。
洗浄ステーションS2は、搬入出ステーションS1と受渡ステーションS3との間に設けられる。洗浄ステーションS2には、ウエハWの受け渡しが行われる第1受渡部TRS1と、ウエハWを搬送する搬送部22と、ウエハWを洗浄する塗布前洗浄部23と、ウエハWを検査する検査部24とが設けられている。
受渡ステーションS3は、搬入出ステーションS1と受渡ステーションS3との間に設けられる。受渡ステーションS3には、棚ユニット31と、複数(ここでは、2つ)の搬送部32と、棚ユニット33とが設けられている。棚ユニット31は、搬送部22、搬送部32および後述する搬送部41~46がアクセス可能な位置に配置される。2つの搬送部32は、棚ユニット31を挟んで対向する位置に配置される。棚ユニット33は、搬送部32から見て棚ユニット31と反対側に配置されており、1つの搬送部32のみがアクセス可能である。
図1~図4に示すように、処理ステーションS4は、積層された6つの処理ブロックB1~B6と、搬送ブロックBMとを備える。搬送ブロックBMは、搬入出ステーションS1~インタフェースステーションS5の並び方向(ここでは、Y軸方向)に沿って延在する。
搬送ブロックBMは、上述したフロント側処理ブロックB1F~B6Fとバック側処理ブロックB1B~B6Bとの間に配置される。図4に示すように、搬送ブロックBMには、複数(ここでは、6つ)の搬送部41~46が、高さ方向に並べて配置される。複数の搬送部41~46は、それぞれ処理ブロックB1~B6の高さ位置に配置される。
インタフェースステーションS5は、受渡ステーションS3と露光装置EXPとを接続する。インタフェースステーションS5には、棚ユニット51と、搬送部52と、複数(ここでは、2つ)の搬送部53と、塗布後洗浄部54と、露光後洗浄部55とが設けられている。
制御装置6は、制御部61と、記憶部62とを備える。制御部61は、たとえばコンピュータであり、コンピュータで読み取り可能な記憶媒体を有する。記憶媒体には、塗布、現像装置1において実行される各種の処理を制御するプログラムが格納される。
次に、塗布、現像装置1の具体的動作の一例について図5を参照して説明する。図5は、第1実施形態に係るウエハの搬送フローを示す図である。
次に、塗布前洗浄部23の具体的な構成例について図6および図7を参照して説明する。図6は、第1実施形態に係る塗布前洗浄部23の概略平面図である。図7は、第1実施形態に係る塗布前洗浄部23の概略側面図である。なお、図7では、液供給部105を省略して示している。
次に、塗布後洗浄部54の構成例について図8および図9を参照して説明する。図8は、第1実施形態に係る塗布後洗浄部54の概略平面図である。図9は、第1実施形態に係る塗布後洗浄部54の概略側面図である。
次に、第2実施形態に係る塗布、現像装置の構成について図10および図11を参照して説明する。図10は、第2実施形態に係る塗布、現像装置の概略平面図である。図11は、第2実施形態に係る塗布、現像装置の概略側面図である。
次に、第3実施形態に係る塗布、現像装置の構成について図12および図13を参照して説明する。図12は、第3実施形態に係る塗布、現像装置の概略平面図である。図13は、第3実施形態に係る塗布、現像装置の概略側面図である。
上述した実施形態では、塗布前洗浄部23が洗浄ステーションS2,S2Aまたは処理ステーションS4Bに設けられる場合の例について説明した。これに限らず、塗布前洗浄部23は、たとえば、受渡ステーションS3に設けられてもよいし、インタフェースステーションS5に設けられてもよい。塗布前洗浄部23をインタフェースステーションS5に設ける場合、複数の塗布前洗浄部23と複数の塗布後洗浄部54とを高さ方向に並べて配置してもよい。また、塗布前洗浄部23の機能すなわちウエハWのおもて面を物理的に洗浄する機能(たとえば、図6に示す洗浄部104)を塗布後洗浄部54に付加した洗浄部をインタフェースステーションS5に設けてもよい。
W ウエハ
S1 搬入出ステーション
S2 洗浄ステーション
S3 受渡ステーション
S4 処理ステーション
S5 インタフェースステーション
COT 塗布処理部
DEV 現像処理部
BK1 第1加熱部
BK2 第2加熱部
EXP 露光装置
BM 搬送ブロック
1 塗布、現像装置
23 塗布前洗浄部
24 検査部
Claims (7)
- 複数の基板を収納したカセットが載置されるカセット載置部を含む搬入出ステーションと、
前記基板のおもて面にレジストを塗布する塗布処理を行う塗布処理部と、露光装置にて露光された後の前記基板のおもて面に現像液を供給して現像処理を行う現像処理部と、前記基板を加熱する加熱部と、を含む処理ステーションと、
前記搬入出ステーションと前記処理ステーションとの間に設けられた受渡ステーションと、
前記搬入出ステーションと前記受渡ステーションとの間に設けられた洗浄ステーションと、
前記洗浄ステーションに設けられ、前記塗布処理前の前記基板のおもて面を物理的に洗浄する複数の塗布前洗浄部と、
を備え、
前記処理ステーションは、
積層された複数の処理ブロック
を備え、
前記受渡ステーションは、
前記基板の受渡場所が前記複数の処理ブロックに対応して多段に設けられた棚ユニットと、
一の前記受渡場所から他の前記受渡場所へ前記基板を移し換える移換部と
を含み、
前記洗浄ステーションは、
前記搬入出ステーションから搬送された前記基板が載置される基板載置部と、
前記基板載置部、前記塗布前洗浄部および前記受渡場所間で前記基板を搬送する搬送部と
を含み、
前記複数の塗布前洗浄部は、前記洗浄ステーションにおいて、高さ方向に並べて配置される、塗布、現像装置。 - 複数の基板を収納したカセットが載置されるカセット載置部を含む搬入出ステーションと、
前記基板のおもて面にレジストを塗布する塗布処理を行う塗布処理部と、露光装置にて露光された後の前記基板のおもて面に現像液を供給して現像処理を行う現像処理部と、前記基板を加熱する加熱部と、を含む処理ステーションと、
前記搬入出ステーションと前記露光装置との間に設けられ、前記塗布処理前の前記基板のおもて面を物理的に洗浄する塗布前洗浄部と、
を備え、
前記処理ステーションは、
積層された複数の処理ブロック
を備え、
前記複数の処理ブロックは、
前記塗布前洗浄部が設けられる第1処理ブロックと、
前記塗布処理部が設けられる第2処理ブロックと、
前記現像処理部が設けられる第3処理ブロックと
を含み、
前記第1処理ブロック、前記第2処理ブロックおよび前記第3処理ブロックは、下から順に前記第1処理ブロック、前記第2処理ブロックおよび前記第3処理ブロックの順番で配置される、塗布、現像装置。 - 前記洗浄ステーションは、
前記基板の状態を検査する検査部を含む、請求項1に記載の塗布、現像装置。 - 前記洗浄ステーションは、
高さ方向に並べて配置された複数の前記基板載置部と、
前記搬送部とは別の搬送部であって、複数の前記基板載置部のうち一の前記基板載置部に載置された前記基板を他の前記基板載置部に移し替える他の搬送部と
を備える、請求項1または3に記載の塗布、現像装置。 - 前記処理ステーションと前記露光装置との間に設けられ、前記塗布処理後の前記基板の裏面を物理的に洗浄する塗布後洗浄部
を備える、請求項1~4のいずれか一つに記載の塗布、現像装置。 - 前記処理ステーションと前記露光装置とを接続するインタフェースステーション
をさらに備え、
前記塗布後洗浄部は、
前記インタフェースステーションに設けられる、請求項5に記載の塗布、現像装置。 - 前記基板は、半導体ウエハである、請求項1~6のいずれか一つに記載の塗布、現像装置。
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JP2007294817A (ja) | 2006-04-27 | 2007-11-08 | Sokudo:Kk | 基板処理方法、基板処理システムおよび基板処理装置 |
JP2009032886A (ja) | 2007-07-26 | 2009-02-12 | Sokudo:Kk | 基板処理装置 |
JP2012019130A (ja) | 2010-07-09 | 2012-01-26 | Tokyo Electron Ltd | 塗布、現像装置、塗布、現像方法及び記憶媒体 |
JP2012156497A (ja) | 2011-01-05 | 2012-08-16 | Tokyo Electron Ltd | 塗布、現像装置、塗布、現像方法及び記憶媒体 |
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JP2009032886A (ja) | 2007-07-26 | 2009-02-12 | Sokudo:Kk | 基板処理装置 |
JP2012019130A (ja) | 2010-07-09 | 2012-01-26 | Tokyo Electron Ltd | 塗布、現像装置、塗布、現像方法及び記憶媒体 |
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