JP7247902B2 - エピタキシャルウェーハの製造方法 - Google Patents
エピタキシャルウェーハの製造方法 Download PDFInfo
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- JP7247902B2 JP7247902B2 JP2020002741A JP2020002741A JP7247902B2 JP 7247902 B2 JP7247902 B2 JP 7247902B2 JP 2020002741 A JP2020002741 A JP 2020002741A JP 2020002741 A JP2020002741 A JP 2020002741A JP 7247902 B2 JP7247902 B2 JP 7247902B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 102
- 239000001301 oxygen Substances 0.000 claims description 102
- 229910052760 oxygen Inorganic materials 0.000 claims description 102
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- 239000010703 silicon Substances 0.000 claims description 40
- 229910021480 group 4 element Inorganic materials 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- 230000001590 oxidative effect Effects 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 107
- 238000000034 method Methods 0.000 description 44
- 238000005247 gettering Methods 0.000 description 20
- 125000004429 atom Chemical group 0.000 description 16
- 239000000758 substrate Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910003811 SiGeC Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- -1 carbon ions Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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Description
以下のような導電型、直径、結晶面方位である単結晶シリコンウェーハを準備した。
基板の導電型 :p型
直径 :300mm
結晶面方位 :(100)
酸素原子層の形成において、大気中に放置した時間を7時間としたこと以外は実施例1と同じ条件でエピタキシャルウェーハの製造及び評価を行った。
実施例1及び比較例1と同じ単結晶シリコンウェーハを準備し、HF洗浄によるウェットプロセスでの自然酸化膜の除去を行った後、大気中に5時間放置して酸素原子層の形成を行った。次に、580℃の温度で単結晶シリコンウェーハ表面へのエピタキシャル成長を行った。
2…酸素原子層、
3…単結晶シリコン層、
10、10’…エピタキシャルウェーハ。
Claims (9)
- シリコンを含むIV族の元素からなるウェーハ上に単結晶シリコン層を形成するエピタキシャルウェーハの製造方法であって、
水素を含む雰囲気で前記シリコンを含むIV族の元素からなるウェーハ表面の自然酸化膜を除去する工程、
前記自然酸化膜を除去した後に前記ウェーハを酸化して酸素原子層を形成する工程、及び、
前記酸素原子層を形成した後に前記ウェーハ表面に気相成長法により単結晶シリコンをエピタキシャル成長させる工程を含み、
前記酸素原子層の酸素の平面濃度を4×1014atoms/cm2以下とすることを特徴とするエピタキシャルウェーハの製造方法。 - 前記シリコンを含むIV族の元素からなるウェーハとして、単結晶シリコンウェーハを用いることを特徴とする請求項1に記載のエピタキシャルウェーハの製造方法。
- 前記自然酸化膜を除去する工程では、前記ウェーハを水素を含む雰囲気で加熱することにより自然酸化膜を除去することを特徴とする請求項1又は請求項2に記載のエピタキシャルウェーハの製造方法。
- 前記自然酸化膜を除去する工程では、前記ウェーハを800℃以上1250℃以下の温度に加熱し、この範囲の温度を1秒以上5分以下の間保持することにより自然酸化膜を除去することを特徴とする請求項3に記載のエピタキシャルウェーハの製造方法。
- 前記自然酸化膜を除去する工程では、水素を含むプラズマを用いることにより自然酸化膜を除去することを特徴とする請求項1又は請求項2に記載のエピタキシャルウェーハの製造方法。
- 前記酸素原子層を形成する工程では、酸素を含む雰囲気で前記ウェーハを酸化することを特徴とする請求項1から請求項5のいずれか一項に記載のエピタキシャルウェーハの製造方法。
- 前記酸素原子層を形成する工程では、大気中で前記ウェーハを酸化することを特徴とする請求項1から請求項6のいずれか一項に記載のエピタキシャルウェーハの製造方法。
- 前記単結晶シリコンをエピタキシャル成長させる工程では、450℃以上800℃以下の温度でエピタキシャル成長を行うことを特徴とする請求項1から請求項7のいずれか一項に記載のエピタキシャルウェーハの製造方法。
- 前記ウェーハを酸化して酸素原子層を形成する工程と前記単結晶シリコンをエピタキシャル成長させる工程とを交互に複数回行うことを特徴とする請求項1から請求項8のいずれか一項に記載のエピタキシャルウェーハの製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020002741A JP7247902B2 (ja) | 2020-01-10 | 2020-01-10 | エピタキシャルウェーハの製造方法 |
KR1020227022164A KR20220124696A (ko) | 2020-01-10 | 2020-11-24 | 에피택셜 웨이퍼의 제조방법 및 에피택셜 웨이퍼 |
EP20911506.2A EP4089720A4 (en) | 2020-01-10 | 2020-11-24 | METHOD FOR PRODUCING AN EPITACTIC WAFER AND EPITACTIC WAFER |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000323689A (ja) | 1999-05-14 | 2000-11-24 | Toshiba Corp | 半導体エピタキシャル基板及びその製造方法 |
JP2005109521A (ja) | 2004-12-20 | 2005-04-21 | Sumitomo Mitsubishi Silicon Corp | 表面処理方法およびシリコンウェーハ |
JP2019004050A (ja) | 2017-06-15 | 2019-01-10 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
JP2019117890A (ja) | 2017-12-27 | 2019-07-18 | 株式会社Sumco | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
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JP2750063B2 (ja) | 1991-12-17 | 1998-05-13 | 松下電器産業株式会社 | 半導体界面形成方法 |
DE69628505T2 (de) * | 1995-07-21 | 2004-05-06 | Canon K.K. | Halbleitendes Substrat und dessen Herstellungsverfahren |
US7153763B2 (en) | 2003-06-26 | 2006-12-26 | Rj Mears, Llc | Method for making a semiconductor device including band-engineered superlattice using intermediate annealing |
JP2007521648A (ja) | 2003-06-26 | 2007-08-02 | アール.ジェイ. メアーズ エルエルシー | バンド設計超格子を有するmosfetを有する半導体装置 |
JP5168990B2 (ja) | 2007-04-11 | 2013-03-27 | 信越半導体株式会社 | 半導体基板の製造方法 |
JP5205840B2 (ja) | 2007-07-06 | 2013-06-05 | 信越半導体株式会社 | 半導体基板の製造方法 |
EP2770526B1 (en) | 2013-02-22 | 2018-10-03 | IMEC vzw | Oxygen monolayer on a semiconductor |
JP6861471B2 (ja) * | 2015-06-12 | 2021-04-21 | キヤノン株式会社 | 撮像装置およびその製造方法ならびにカメラ |
CN109509704A (zh) * | 2017-09-15 | 2019-03-22 | 胜高股份有限公司 | 外延硅晶片的制备方法及外延硅晶片 |
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JP2000323689A (ja) | 1999-05-14 | 2000-11-24 | Toshiba Corp | 半導体エピタキシャル基板及びその製造方法 |
JP2005109521A (ja) | 2004-12-20 | 2005-04-21 | Sumitomo Mitsubishi Silicon Corp | 表面処理方法およびシリコンウェーハ |
JP2019004050A (ja) | 2017-06-15 | 2019-01-10 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
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