JP7231120B2 - エピタキシャルウェーハの製造方法 - Google Patents
エピタキシャルウェーハの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 115
- 239000001301 oxygen Substances 0.000 claims description 115
- 229910052760 oxygen Inorganic materials 0.000 claims description 115
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 72
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 114
- 235000012431 wafers Nutrition 0.000 description 78
- 238000000034 method Methods 0.000 description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000000758 substrate Substances 0.000 description 21
- 238000005247 gettering Methods 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 125000004429 atom Chemical group 0.000 description 17
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 7
- 238000004627 transmission electron microscopy Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- -1 carbon ions Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- CUPFNGOKRMWUOO-UHFFFAOYSA-N hydron;difluoride Chemical compound F.F CUPFNGOKRMWUOO-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Description
図2は、本発明のエピタキシャルウェーハの製造方法により得られるエピタキシャルウェーハを示した図である。本発明に係るエピタキシャルウェーハ10Aは、単結晶シリコンウェーハ1上に単結晶シリコン層3を有し、単結晶シリコン層3と単結晶シリコンウェーハ1との間に酸素原子層2を有している。
図1に、本発明に係るエピタキシャルウェーハの製造フローを示す。
準備した単結晶シリコン基板の導電型、直径、結晶面方位は以下の通りである。
基板の導電型 : p型
直径 : 300mm
結晶面方位 : (100)
実施例1及び比較例1と同じ単結晶シリコン基板を準備した。次に、準備した単結晶シリコン基板の自然酸化膜を除去するために、バッチ式又は枚葉式の装置でフッ酸洗浄を行った後、純水でリンスした。その後、清浄度クラス100の大気中の放置時間が10分以内となるようにして酸素原子層を形成し、続いて水素ベークを行わずに単結晶シリコンのエピタキシャル成長を行った。このとき、圧力は4000Pa、成長温度は580℃とした。
Claims (3)
- 単結晶シリコンウェーハ上に単結晶シリコン層を形成するエピタキシャルウェーハの製造方法であって、
フッ酸により前記単結晶シリコンウェーハ表面の自然酸化膜を除去する工程、
前記自然酸化膜を除去した前記単結晶シリコンウェーハの表面に酸素原子層を形成する工程、
前記酸素原子層を形成した前記単結晶シリコンウェーハの表面上に気相成長法により前記単結晶シリコン層をエピタキシャル成長する工程を含み、
前記酸素原子層の酸素の平面濃度を1×1015atoms/cm2以下とし、
前記酸素原子層を形成する工程では、前記単結晶シリコンウェーハを純水によりリンスすること、及び、酸素を含む雰囲気中に前記単結晶シリコンウェーハを放置することで、前記酸素原子層を形成することを特徴とするエピタキシャルウェーハの製造方法。 - 前記単結晶シリコン層をエピタキシャル成長する工程では、450℃以上かつ800℃以下の温度でエピタキシャル成長を行うことを特徴とする請求項1に記載のエピタキシャルウェーハの製造方法。
- 前記酸素原子層を形成する工程と前記単結晶シリコン層をエピタキシャル成長する工程とを交互に複数回行うことを特徴とする請求項1又は請求項2に記載のエピタキシャルウェーハの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2021009549 | 2021-01-25 | ||
JP2021009549 | 2021-01-25 | ||
PCT/JP2021/044763 WO2022158148A1 (ja) | 2021-01-25 | 2021-12-06 | エピタキシャルウェーハの製造方法 |
Publications (3)
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JPWO2022158148A1 JPWO2022158148A1 (ja) | 2022-07-28 |
JPWO2022158148A5 JPWO2022158148A5 (ja) | 2022-12-23 |
JP7231120B2 true JP7231120B2 (ja) | 2023-03-01 |
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US (1) | US20240063027A1 (ja) |
EP (1) | EP4283024A1 (ja) |
JP (1) | JP7231120B2 (ja) |
KR (1) | KR20230132455A (ja) |
CN (1) | CN116685723A (ja) |
TW (1) | TW202230462A (ja) |
WO (1) | WO2022158148A1 (ja) |
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JP7435516B2 (ja) | 2021-03-22 | 2024-02-21 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000323689A (ja) | 1999-05-14 | 2000-11-24 | Toshiba Corp | 半導体エピタキシャル基板及びその製造方法 |
JP2003197549A (ja) | 2002-09-06 | 2003-07-11 | Sumitomo Mitsubishi Silicon Corp | エピタキシャルウェーハの製造方法 |
JP2014165494A (ja) | 2013-02-22 | 2014-09-08 | Imec | 半導体上の酸素単原子層 |
JP2019004050A (ja) | 2017-06-15 | 2019-01-10 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
Family Cites Families (5)
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JP2750063B2 (ja) | 1991-12-17 | 1998-05-13 | 松下電器産業株式会社 | 半導体界面形成方法 |
CA2530065C (en) | 2003-06-26 | 2011-12-20 | Rj Mears, Llc | Semiconductor device including mosfet having band-engineered superlattice |
US7153763B2 (en) | 2003-06-26 | 2006-12-26 | Rj Mears, Llc | Method for making a semiconductor device including band-engineered superlattice using intermediate annealing |
JP5168990B2 (ja) | 2007-04-11 | 2013-03-27 | 信越半導体株式会社 | 半導体基板の製造方法 |
JP5205840B2 (ja) | 2007-07-06 | 2013-06-05 | 信越半導体株式会社 | 半導体基板の製造方法 |
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2021
- 2021-12-06 EP EP21921250.3A patent/EP4283024A1/en active Pending
- 2021-12-06 US US18/269,646 patent/US20240063027A1/en active Pending
- 2021-12-06 JP JP2022552294A patent/JP7231120B2/ja active Active
- 2021-12-06 CN CN202180088195.8A patent/CN116685723A/zh active Pending
- 2021-12-06 KR KR1020237023432A patent/KR20230132455A/ko unknown
- 2021-12-06 WO PCT/JP2021/044763 patent/WO2022158148A1/ja active Application Filing
- 2021-12-09 TW TW110145970A patent/TW202230462A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000323689A (ja) | 1999-05-14 | 2000-11-24 | Toshiba Corp | 半導体エピタキシャル基板及びその製造方法 |
JP2003197549A (ja) | 2002-09-06 | 2003-07-11 | Sumitomo Mitsubishi Silicon Corp | エピタキシャルウェーハの製造方法 |
JP2014165494A (ja) | 2013-02-22 | 2014-09-08 | Imec | 半導体上の酸素単原子層 |
JP2019004050A (ja) | 2017-06-15 | 2019-01-10 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
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TW202230462A (zh) | 2022-08-01 |
JPWO2022158148A1 (ja) | 2022-07-28 |
KR20230132455A (ko) | 2023-09-15 |
US20240063027A1 (en) | 2024-02-22 |
EP4283024A1 (en) | 2023-11-29 |
WO2022158148A1 (ja) | 2022-07-28 |
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