JP7228793B2 - 波長変換デバイス - Google Patents
波長変換デバイス Download PDFInfo
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- JP7228793B2 JP7228793B2 JP2019106935A JP2019106935A JP7228793B2 JP 7228793 B2 JP7228793 B2 JP 7228793B2 JP 2019106935 A JP2019106935 A JP 2019106935A JP 2019106935 A JP2019106935 A JP 2019106935A JP 7228793 B2 JP7228793 B2 JP 7228793B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Lasers (AREA)
Description
本実施の形態では、一般式RAMO4で表される単結晶体(一般式において、Rは、Sc、In、Y、およびランタノイド系元素からなる群から選択される一つまたは複数の三価の元素を表し、Aは、Fe(III)、Ga、およびAlからなる群から選択される一つまたは複数の三価の元素を表し、Mは、Mg、Mn、Fe(II)、Co、Cu、Zn、およびCdからなる群から選択される一つまたは複数の二価の元素を表す)からなるRAMO4結晶を用いた波長変換デバイスについて説明する。
上述のRAMO4結晶150は、チョクラルスキー法(以下、「CZ法」とも称する)による結晶引き上げ装置で作成することができる。
110 励起用レーザダイオード
120 集光レンズ
130 ミラーコーティング
140 レーザ結晶
150 RAMO4結晶
160 出力ミラー
170 コリメートレンズ
180 レーザ光
400 高周波加熱方式炉
410 原料
420 ルツボ
421 ルツボ支持軸
422 耐火材
430 断熱材
440 加熱コイル
450 結晶引き上げ軸
451 シードホルダ
452 種結晶
Claims (6)
- 一般式RAMO4で表される単結晶体(一般式において、Rは、Sc、In、およびランタノイド系元素からなる群から選択される一つまたは複数の三価の元素を表し、AはGaおよびAlからなる群から選択される一つまたは複数の三価の元素を表し、Mは、Mg、Mn、およびCoからなる群から選択される一つまたは複数の二価の元素を表す)からなるRAMO4結晶と、レーザ結晶と、ミラーと、を含むキャビティを有する、
波長変換デバイス。 - 前記レーザ結晶は、Nd:YAG、Nd:YVO4、Yb:YAGまたはYb:YVO4のいずれかである、
請求項1に記載の波長変換デバイス。 - 前記一般式RAMO4における前記RはScまたはInであり、前記AはAlまたはGaであり、前記MはMg、CoおよびMnからなる群から選ばれる一つ、または二つ以上の組み合わせである、
請求項1または2に記載の波長変換デバイス。 - 前記RAMO4結晶が、化学式InGaMgO4で表される結晶である、
請求項3に記載の波長変換デバイス。 - 前記RAMO4結晶が、一般式ScAlM’O4で表される結晶である(一般式において、M’は、Mg、CoおよびMnからなる群から選ばれる一つまたは二つ以上の組み合わせを表す)、
請求項1または2に記載の波長変換デバイス。 - 前記RAMO4結晶が、化学式ScAlMgxCo1-xO4で表される(ただし、0.7≦x≦0.9)結晶である、
請求項5記載の波長変換デバイス。
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JP2019106935A JP7228793B2 (ja) | 2019-06-07 | 2019-06-07 | 波長変換デバイス |
US16/889,279 US11437773B2 (en) | 2019-06-07 | 2020-06-01 | Wavelength conversion device |
CN202010497257.8A CN112051695A (zh) | 2019-06-07 | 2020-06-03 | 波长转换装置 |
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JP2019106935A JP7228793B2 (ja) | 2019-06-07 | 2019-06-07 | 波長変換デバイス |
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JP7228793B2 true JP7228793B2 (ja) | 2023-02-27 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000031532A (ja) | 1998-07-14 | 2000-01-28 | Toshiba Electronic Engineering Corp | 半導体発光装置 |
JP2006066863A (ja) | 2004-02-02 | 2006-03-09 | Sanken Electric Co Ltd | 半導体発光素子と保護素子との複合半導体装置 |
JP2007147889A (ja) | 2005-11-25 | 2007-06-14 | Noritsu Koki Co Ltd | レーザ露光装置 |
JP2010123819A (ja) | 2008-11-21 | 2010-06-03 | Shimadzu Corp | レーザ媒質 |
CN103103612A (zh) | 2011-11-09 | 2013-05-15 | 中国科学院福建物质结构研究所 | 含Mg非中心对称结构稀土硫化物 |
JP2013544436A (ja) | 2010-11-02 | 2013-12-12 | コーニンクレッカ フィリップス エヌ ヴェ | Iii族窒化物発光デバイス |
US20160138182A1 (en) | 2014-11-18 | 2016-05-19 | Wisconsin Alumni Research Foundation | Methods for forming mixed metal oxide epitaxial films |
JP2017208502A (ja) | 2016-05-20 | 2017-11-24 | パナソニック株式会社 | Iii族窒化物半導体及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3887697T2 (de) * | 1987-05-06 | 1994-05-11 | Coors Porcelain Co | Transparenter polykristalliner gegenstand mit erhöhter ultraviolettdurchlässigkeit, verfahren zur herstellung und anwendung. |
JPH0511295A (ja) | 1991-07-03 | 1993-01-19 | Matsushita Electric Ind Co Ltd | 波長変換素子および短波長レーザ光源 |
JP3182749B2 (ja) | 1994-07-26 | 2001-07-03 | 日立金属株式会社 | 固体レーザ装置 |
US5530267A (en) * | 1995-03-14 | 1996-06-25 | At&T Corp. | Article comprising heteroepitaxial III-V nitride semiconductor material on a substrate |
DE19521548A1 (de) | 1995-06-13 | 1996-12-19 | Ipsen Ind Int Gmbh | Verfahren und Vorrichtung zur Steuerung der elektrischen Stromdichte über einem Werkstück bei der Wärmebehandlung im Plasma |
JP3683360B2 (ja) * | 1996-09-30 | 2005-08-17 | 富士写真フイルム株式会社 | 偏光制御素子および固体レーザー |
JP4100733B2 (ja) | 1997-01-27 | 2008-06-11 | 独立行政法人科学技術振興機構 | 高調波発生方法 |
AU5264999A (en) | 1998-03-27 | 1999-10-18 | Japan Science And Technology Corporation | Wavelength conversion crystal and method for generating laser beam, and apparatus for generating laser beam |
US7179405B2 (en) * | 2002-10-01 | 2007-02-20 | The Regents Of The University Of California | Nonlinear optical crystal optimized for Ytterbium laser host wavelengths |
JP2005057043A (ja) | 2003-08-04 | 2005-03-03 | Topcon Corp | 固体レーザ装置及び波長変換光学部材の製造方法 |
US20060243197A1 (en) * | 2004-05-14 | 2006-11-02 | Eiichi Hanamura | Transition metal doped spinel type mgal2o4 fluorescent material and laser apparatus using, and method of making, such fluorescent material |
US20090021830A1 (en) * | 2005-09-14 | 2009-01-22 | Carl Zeiss Smt Ag | Projection lens of a microlithographic exposure system |
JP2006295215A (ja) | 2006-07-11 | 2006-10-26 | Toshiba Electronic Engineering Corp | 半導体発光装置 |
RU2596179C2 (ru) * | 2010-09-29 | 2016-08-27 | Конинклейке Филипс Электроникс Н.В. | Светоизлучающее устройство с преобразованной длиной волны |
JP7228792B2 (ja) * | 2019-06-07 | 2023-02-27 | パナソニックIpマネジメント株式会社 | 波長変換装置 |
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- 2019-06-07 JP JP2019106935A patent/JP7228793B2/ja active Active
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2020
- 2020-06-01 US US16/889,279 patent/US11437773B2/en active Active
- 2020-06-03 CN CN202010497257.8A patent/CN112051695A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000031532A (ja) | 1998-07-14 | 2000-01-28 | Toshiba Electronic Engineering Corp | 半導体発光装置 |
JP2006066863A (ja) | 2004-02-02 | 2006-03-09 | Sanken Electric Co Ltd | 半導体発光素子と保護素子との複合半導体装置 |
JP2007147889A (ja) | 2005-11-25 | 2007-06-14 | Noritsu Koki Co Ltd | レーザ露光装置 |
JP2010123819A (ja) | 2008-11-21 | 2010-06-03 | Shimadzu Corp | レーザ媒質 |
JP2013544436A (ja) | 2010-11-02 | 2013-12-12 | コーニンクレッカ フィリップス エヌ ヴェ | Iii族窒化物発光デバイス |
CN103103612A (zh) | 2011-11-09 | 2013-05-15 | 中国科学院福建物质结构研究所 | 含Mg非中心对称结构稀土硫化物 |
US20160138182A1 (en) | 2014-11-18 | 2016-05-19 | Wisconsin Alumni Research Foundation | Methods for forming mixed metal oxide epitaxial films |
JP2017208502A (ja) | 2016-05-20 | 2017-11-24 | パナソニック株式会社 | Iii族窒化物半導体及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
金子他,HVPE法によるSiO2ワイドマスクパターンを施したScAlMgO4基板上の高品質自立GaN基板の作製,2020年 第81回応用物理学会秋季学術講演会 講演予稿集 ,10p-Z02-8,13-097 |
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CN112051695A (zh) | 2020-12-08 |
US20200388981A1 (en) | 2020-12-10 |
JP2020201341A (ja) | 2020-12-17 |
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