JP7209515B2 - 基板保持機構および成膜装置 - Google Patents
基板保持機構および成膜装置 Download PDFInfo
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- JP7209515B2 JP7209515B2 JP2018221311A JP2018221311A JP7209515B2 JP 7209515 B2 JP7209515 B2 JP 7209515B2 JP 2018221311 A JP2018221311 A JP 2018221311A JP 2018221311 A JP2018221311 A JP 2018221311A JP 7209515 B2 JP7209515 B2 JP 7209515B2
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- 239000000758 substrate Substances 0.000 title claims description 94
- 230000008021 deposition Effects 0.000 title claims description 16
- 239000007789 gas Substances 0.000 claims description 124
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 12
- 238000001179 sorption measurement Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 5
- 229910003074 TiCl4 Inorganic materials 0.000 claims description 4
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 70
- 238000012545 processing Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910004356 Ti Raw Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/45542—Plasma being used non-continuously during the ALD reactions
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
最初に、一実施形態に係る基板保持機構について説明する。図1は一実施形態に係る基板保持機構を示す斜視図、図2はその平面図、図3はその断面図、図4はその要部を拡大して示す断面図である。
ウエハ等の被処理基板に対してプラズマ処理を行う際には、従来から、被処理基板の吸着に静電チャックが用いられてきた。一方、プラズマCVDやプラズマALDのような等方的な成膜手法により導電性膜を成膜する場合は、被処理基板の保持面に原料ガスが回り込んで導電性デポ膜が堆積し、静電チャックの機能が発揮されない場合が生じる。このため、静電チャック機能が発揮されないことが懸念される。このため、プラズマCVDやプラズマALDにより導電性膜を成膜する場合には、静電チャックは用いられていなかった。
次に、一実施形態に係る基板保持機構を適用した成膜装置について説明する。
図8は、一実施形態に係る基板保持機構を適用した成膜装置を示す断面図である。
以上、実施形態について説明したが、今回開示された実施形態は、全ての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の特許請求の範囲およびその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。
2;ステージ
3;支持部材
11,11a;吸着電極
12;ヒータ
19;補助電極
21;密着領域
22;吸着面
23;空間
24;ガス導入口
25;溝部
28;導電性デポ膜
100;成膜装置
101;チャンバー
110;シャワーヘッド
120;ガス供給機構
141;高周波電源
W;ウエハ(被処理基板)
Claims (17)
- プラズマCVDまたはプラズマALDにより導電性膜を成膜する際に、被処理基板を保持する基板保持機構であって、
誘電体で構成され、被処理基板を支持するステージと、
前記ステージ内に設けられた、前記被処理基板を静電吸着するための吸着電極と、
前記ステージを加熱するヒータと、
を備え、
前記吸着電極に直流電圧が印加されることにより、ジョンソン・ラーベック力により前記被処理基板が前記ステージの表面に静電吸着され、
前記ステージは、
前記ステージの表面の被処理基板の外周に対応する位置に設けられ、前記被処理基板が密着され、前記導電性膜を成膜するための原料ガスが前記被処理基板の裏面側に回り込むことを阻止する機能を有する円環状をなす密着領域と、
前記ステージの表面の前記密着領域の外側の部分に前記密着領域に繋がるように円環状に設けられ、前記密着領域の表面からの深さが20~100μmであり、幅が0.5~2mmの範囲であって、前記原料ガスによる導電性デポ膜が蓄積可能な溝部と、
前記ステージの表面の前記溝部の外側の部分に円環状に設けられ、前記密着領域よりも高い高さを有するとともに、前記溝部の底部へ繋がるテーパー状の側壁部を有し、前記被処理基板をガイドするガイド部と、
を有する、基板保持機構。 - 前記密着領域は、その幅が10~40mmである、請求項1に記載の基板保持機構。
- 前記ヒータによる前記ステージの表面の温度は、200℃以上である、請求項1または請求項2に記載の基板保持機構。
- 前記ヒータによる前記ステージの表面の温度は、400~700℃である、請求項3に記載の基板保持機構。
- 前記ステージの前記密着領域の内側の部分は、凹部をなす吸着面であり、
前記被処理基板と前記吸着面との間の空間に伝熱用のバックサイドガスを供給するバックサイドガス供給機構をさらに備える、請求項1から請求項4のいずれか1項に記載の基板保持機構。 - 前記バックサイドガス供給機構は、バックサイドガスのガス圧を20~100Torrに設定する、請求項5に記載の基板保持機構。
- 前記吸着電極は、プラズマに対する接地電極として機能する、請求項1から請求項6のいずれか1項に記載の基板保持機構。
- 前記ステージを構成する誘電体は、成膜温度における体積抵抗率が1×109~1×1012Ω・cm程度である、請求項1から請求項7のいずれか1項に記載の基板保持機構。
- 前記誘電体はAlNである、請求項8に記載の基板保持機構。
- 前記吸着電極から前記ステージに吸着された前記被処理基板の吸着面までの距離は、0.5~1.5mmである、請求項1から請求項9のいずれか1項に記載の基板保持機構。
- 前記吸着電極と、前記ステージの表面の前記密着領域よりも外側に形成される導電性デポ膜との間の距離は、前記吸着電極から前記ステージに吸着された前記被処理基板の吸着面までの距離よりも大きい、請求項1から請求項10のいずれか1項に記載の基板保持機構。
- 前記吸着電極の外側に、前記導電性デポ膜との間の距離が、前記吸着電極から前記ステージに吸着された前記被処理基板の吸着面までの距離よりも大きい、プラズマを広げるための補助電極をさらに有する、請求項11に記載の基板保持機構。
- 前記ステージの底面の裏面側中央に下方に延びるように取り付けられた支持部材をさらに備える、請求項1から請求項12のいずれか1項に記載の基板保持機構。
- プラズマCVDまたはプラズマALDにより導電性膜を成膜する成膜装置であって、
成膜処理が行われるチャンバーと、
チャンバー内に設けられた請求項1から請求項13の基板保持機構と、
前記導電性膜を成膜するためのガスをチャンバー内に導入するガス導入部と、
前記チャンバー内にプラズマを生成するプラズマ生成機構と、
前記チャンバー内を排気する排気機構と、
を備える、成膜装置。 - 前記ガス導入部は、ガスをシャワー状に前記チャンバー内に導入するシャワーヘッドを有し、
前記プラズマ生成機構は、前記シャワーヘッドに高周波電力を印加する高周波電源を有する、請求項14に記載の成膜装置。 - 前記導電性膜を成膜するためのガスとして、Ti原料ガスおよび還元ガスを用い、導電性膜としてTi膜を成膜する、請求項14または請求項15に記載の成膜装置。
- 前記Ti原料ガスとしてTiCl4ガス、前記還元ガスとしてH2ガスを用いる、請求項16に記載の成膜装置。
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