JP7201384B2 - アイレットの製造方法 - Google Patents
アイレットの製造方法 Download PDFInfo
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- JP7201384B2 JP7201384B2 JP2018196754A JP2018196754A JP7201384B2 JP 7201384 B2 JP7201384 B2 JP 7201384B2 JP 2018196754 A JP2018196754 A JP 2018196754A JP 2018196754 A JP2018196754 A JP 2018196754A JP 7201384 B2 JP7201384 B2 JP 7201384B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 230000002093 peripheral effect Effects 0.000 claims description 105
- 239000002184 metal Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 238000004080 punching Methods 0.000 claims description 3
- 239000000047 product Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 13
- 238000012986 modification Methods 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000012467 final product Substances 0.000 description 5
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
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- 238000007789 sealing Methods 0.000 description 4
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- 229910052742 iron Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- 238000005520 cutting process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
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- 239000000853 adhesive Substances 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21K—MAKING FORGED OR PRESSED METAL PRODUCTS, e.g. HORSE-SHOES, RIVETS, BOLTS OR WHEELS
- B21K23/00—Making other articles
- B21K23/04—Making other articles flanged articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
- B21J5/02—Die forging; Trimming by making use of special dies ; Punching during forging
- B21J5/027—Trimming
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4878—Mechanical treatment, e.g. deforming
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D28/00—Shaping by press-cutting; Perforating
- B21D28/02—Punching blanks or articles with or without obtaining scrap; Notching
- B21D28/16—Shoulder or burr prevention, e.g. fine-blanking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48101—Connecting bonding areas at the same height, e.g. horizontal bond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
- H01L2224/48249—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Punching Or Piercing (AREA)
- Semiconductor Lasers (AREA)
- Forging (AREA)
Description
[第1実施形態に係るアイレットの構造]
まず、第1実施形態に係るアイレットの構造について説明する。図1は、第1実施形態に係るアイレットを例示する図であり、図1(a)は平面図、図1(b)は図1(a)のA-A線に沿う断面図である。
次に、第1実施形態に係るアイレットの製造方法について説明する。図2及び図3は、第1実施形態に係るアイレットの製造工程を例示する図である。
第1実施形態の変形例1では、一次加工工程と二次加工工程との間に更なる工程を追加し、第1実施形態よりもアイレットのせん断面を更に長くする例を示す。なお、第1実施形態の変形例1において、既に説明した実施の形態と同一構成部についての説明は省略する場合がある。
第2実施形態では、第1実施形態に係るアイレットを用いた発光装置の例を示す。なお、第2実施形態において、既に説明した実施の形態と同一構成部についての説明は省略する場合がある。
10、10A アイレット
11 基体
12 段差部
11a 一方の面
11b 他方の面
11c、12a、110c 外周面
12b、12c 面
20 発光素子
30 リード
31 第1リード
32 第2リード
33 第3リード
40 封止部
50 金属線
60 キャップ
70 透明部材
90 金属部材
100、100A 一次加工品
110 円柱部
120 板状部
125 周辺部
125a 内周側
125b 外周側
125d シェービングの削りかす
510、530、550 ダイ
510a、530a、550a 載置面
510c、530c、550c 内周面
510x、530x、550x 孔
520、560 成形パンチ
540 トリムパンチ
Claims (3)
- 円柱状の金属部材を準備し、前記円柱状の金属部材の一次加工品を形成する一次加工工程と、
前記一次加工品を打ち抜いて二次加工品を形成する二次加工工程と、を有するアイレットの製造方法であって、
前記一次加工工程では、前記一次加工品は、板状部と、前記板状部の一方の面の周辺部を除く領域から突起し、外周面がせん断面である円柱部と、を有する形状に形成され、
前記二次加工工程では、載置面から厚さ方向に孔が形成された下金型を準備し、前記円柱部の外周面と前記孔の内周面との間に隙間が形成された状態で、前記一次加工品が前記下金型に支持された状態とし、前記孔より小径の上金型で前記円柱部の全部及び前記板状部の一部を前記板状部側から打ち抜き、
前記二次加工品は、前記円柱部の全部と前記板状部の一部から形成される基体と、前記基体の外周面の一端側から外側に環状に突起する段差部と、を有し、
前記段差部が形成されている領域を除く前記基体の外周面はせん断面であり、前記段差部の外周面は破断面であることを特徴とするアイレットの製造方法。 - 前記一次加工工程と前記二次加工工程との間に、前記板状部の前記周辺部の外周側を薄化する工程を有し、
前記二次加工工程では、載置面から厚さ方向に孔が形成された下金型を準備し、前記円柱部が前記孔に挿入され前記周辺部の内周側が前記載置面に接して支持され前記周辺部の外周側が前記載置面と離間した状態とし、前記孔より小径の上金型で前記円柱部の全部及び前記板状部の一部を前記板状部側から打ち抜くことを特徴とする請求項1に記載のアイレットの製造方法。 - 前記二次加工工程では、前記周辺部の内周側がシェービングされると共に、前記円柱部の全部及び前記板状部の一部が切り離されることを特徴とする請求項2に記載のアイレットの製造方法。
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JP2018196754A JP7201384B2 (ja) | 2018-10-18 | 2018-10-18 | アイレットの製造方法 |
EP19201398.5A EP3640974B1 (en) | 2018-10-18 | 2019-10-04 | Method of manufacturing eyelet |
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JP2018196754A JP7201384B2 (ja) | 2018-10-18 | 2018-10-18 | アイレットの製造方法 |
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JP2020062669A JP2020062669A (ja) | 2020-04-23 |
JP2020062669A5 JP2020062669A5 (ja) | 2021-11-04 |
JP7201384B2 true JP7201384B2 (ja) | 2023-01-10 |
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JP2004255454A (ja) | 2003-02-27 | 2004-09-16 | Todo Kogyo Kk | 精密加工プレス用金型及びそれを用いた加工方法 |
WO2015113746A1 (de) | 2014-01-30 | 2015-08-06 | Electrovac Hacht & Huber Gmbh | Verfahren zur herstellung eines anzündersockels |
JP6293350B1 (ja) | 2017-12-01 | 2018-03-14 | 新光電気工業株式会社 | アイレットの製造方法 |
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US4477537A (en) * | 1982-09-23 | 1984-10-16 | Blase Tool And Manufacturing Co., Inc. | Method for producing burr-free blanks and the blanks produced thereby |
JP2000102826A (ja) * | 1998-09-25 | 2000-04-11 | Toshiba Corp | プレス加工法、プレス部品およびプレス部品を用いたブラウン管 |
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JP2004255454A (ja) | 2003-02-27 | 2004-09-16 | Todo Kogyo Kk | 精密加工プレス用金型及びそれを用いた加工方法 |
WO2015113746A1 (de) | 2014-01-30 | 2015-08-06 | Electrovac Hacht & Huber Gmbh | Verfahren zur herstellung eines anzündersockels |
JP6293350B1 (ja) | 2017-12-01 | 2018-03-14 | 新光電気工業株式会社 | アイレットの製造方法 |
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EP3640974B1 (en) | 2021-02-17 |
JP2020062669A (ja) | 2020-04-23 |
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