JP7197376B2 - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 91
- 238000003672 processing method Methods 0.000 title claims description 17
- 239000007788 liquid Substances 0.000 claims description 243
- 238000011282 treatment Methods 0.000 claims description 38
- 239000011261 inert gas Substances 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 88
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 33
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 24
- 238000010586 diagram Methods 0.000 description 15
- 239000000126 substance Substances 0.000 description 9
- 238000003860 storage Methods 0.000 description 7
- 238000001035 drying Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000013598 vector Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BKGWACHYAMTLAF-BYPYZUCNSA-N l-thiocitrulline Chemical compound OC(=O)[C@@H](N)CCC\N=C(/N)S BKGWACHYAMTLAF-BYPYZUCNSA-N 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- B05B9/00—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour
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Description
このためには、
第1液柱P1の中心軸線である第1中心軸線A1及び第2液柱P2の中心軸線である第2中心軸線A2のうちの少なくとも一方(ここでは第2中心軸線A2)が、ウエハWの回転軸線WAに対して傾斜していること(条件1)、及び、
回転軸線WAの方向で見たときに、第1液柱P1及び第2液柱P2をウエハWの表面WSを含む水平平面で切断することにより得られた第1切断面B1及び第2切断面B2が少なくとも部分的に重なっていること(条件2)
が必要である。
WA 鉛直軸線(ウエハの回転軸線)
N1 第1ノズル
N2 第2ノズル
P1 第1液柱
P2 第2液柱
A1 第1中心軸線
A2 第2中心軸線
B1 第1切断面
B2 第2切断面
Claims (14)
- 基板を水平姿勢で鉛直軸線周りに回転させることと、
第1供給期間に第1ノズルから第1処理液を回転する前記基板の表面に供給することと、
第2供給期間に第2ノズルから第2処理液を回転する前記基板の表面に供給することと、
を備えた基板処理方法であって、
前記第1供給期間と前記第2供給期間とが少なくとも部分的にオーバーラップしており、このオーバーラップ期間内において、第1ノズルから吐出される第1処理液により第1液柱が形成されるとともに第2ノズルから吐出される第2処理液により第2液柱が形成され、
前記オーバーラップ期間中に、前記第2ノズルからの前記第2処理液の吐出を停止したと仮定したときの前記第1液柱の形状及び配置、並びに前記第1ノズルからの前記第1処理液の吐出を停止したと仮定したときの前記第2液柱の形状及び配置が、下記の条件、
- 前記第1液柱の中心軸線である第1中心軸線及び前記第2液柱の中心軸線である第2中心軸線のうちの少なくとも前記第2中心軸線が、前記鉛直軸線に対して傾斜していること、
- 前記鉛直軸線の方向で見たときに、前記第1液柱及び前記第2液柱を前記基板の表面を含む水平平面で切断することにより得られた第1切断面及び第2切断面が少なくとも部分的に重なっていること、及び、
- 前記鉛直軸線の方向で見たときに、前記第1中心軸線上の任意の点が、前記第2中心軸線上に位置していること、
を満足しており、
前記基板処理方法は、回転する前記基板の周囲に液受けカップを配置し、前記液受けカップにより前記基板から飛散する処理液を受け止ながら、かつ、前記液受けカップの上部開口部を天板で覆い、前記第1供給期間及び前記第2供給期間のうちの少なくとも一部の期間に前記天板と前記基板との間の空間に不活性ガスを供給しながら実行されることを特徴とする基板処理方法。 - 前記第1ノズル及び前記第2ノズルが相対移動不能に前記天板に固定されているか、
あるいは、前記第1ノズル及び前記第2ノズルが相対移動不能にノズルホルダに固定されるとともに前記ノズルホルダが前記天板の中心部に設けられた開口部に挿入されている、請求項1記載の基板処理方法。 - 前記第1ノズル及び前記第2ノズルは相対移動不能にノズルホルダに固定され、前記ノズルホルダは、前記天板の中心部に設けられた貫通穴の形態の開口部に挿入することができ、このときに前記ノズルホルダが前記液受けカップの上部開口部を閉塞するようになっており、
前記基板処理方法は、前記液受けカップの前記上部開口部を覆う前記天板により前記上部開口部を閉塞し、かつ、前記ノズルホルダにより前記天板の前記開口部を閉塞した状態で実行される、請求項1記載の基板処理方法。 - 前記第1中心軸線が前記鉛直軸線に対して傾斜している、請求項1記載の基板処理方法。
- 前記第1中心軸線が前記鉛直軸線と平行である、請求項1記載の基板処理方法。
- 前記第1中心軸線と前記第2中心軸線とが30度以下の角度を成して交差している、請求項1記載の基板処理方法。
- 前記第1切断面の中心が前記第2切断面内にあり、かつ、前記第2切断面の中心が前記第1切断面内にある、請求項1記載の基板処理方法。
- 前記第1切断面の中心と前記第2切断面の中心との間の距離が2mm以下である、請求項1記載の基板処理方法。
- 前記第1中心軸線と前記第2中心軸線との交点から前記基板の表面までの鉛直方向距離が3mm以下である、請求項1記載の基板処理方法。
- 前記第1ノズル及び前記第2ノズルは相対移動不能に共通の1つのノズルホルダに固定されている、請求項1記載の基板処理方法。
- 前記第1処理液及び前記第2処理液は同じ種類の処理液であるか、あるいは異なる種類の処理液であり、前記第1供給期間は前記第2供給期間よりも時間的に前の期間であるか、あるいは後の期間である、請求項1から10のうちのいずれか一項に記載の基板処理方法。
- 基板を水平姿勢で保持して鉛直軸線周りに回転させる基板保持回転部と、
前記基板に第1処理液を供給する第1ノズルと、
前記基板に第2処理液を供給する第2ノズルと、
前記第1ノズル及び前記第2ノズルが相対移動不能に固定されているノズルホルダと、
前記基板を囲むように設けられ、回転する前記基板から飛散する前記第1処理液及び前記第2処理液を受け止める液受けカップと、
前記液受けカップの上部開口部を覆うことができる天板と、
前記液受けカップの上部開口部を覆っている前記天板と、前記基板保持回転部により保持されている前記基板の表面との間の空間に不活性ガスを供給する不活性ガス供給部と、
を備え、
前記ノズルホルダは、第1ノズルから吐出される第1処理液により形成される第1液柱及び第2ノズルから吐出される第2処理液により形成される第2液柱の形状及び配置が、下記の条件、
- 前記第1液柱の中心軸線である第1中心軸線及び前記第2液柱の中心軸線である第2中心軸線のうちの少なくとも前記第2中心軸線が、前記鉛直軸線に対して傾斜していること、
- 前記鉛直軸線の方向で見たときに、前記第1液柱及び前記第2液柱を前記基板の表面を含む水平平面で切断することにより得られた第1切断面及び第2切断面が少なくとも部分的に重なっていること、及び、
- 前記鉛直軸線の方向で見たときに、前記第1中心軸線上の任意の点が、前記第2中心軸線上に位置していること、
を満足することが可能となるように、前記第1ノズル及び前記第2ノズルを保持していることを特徴とする、基板処理装置。 - 前記ノズルホルダが前記天板に固定されているか、あるいは、前記ノズルホルダを支持しているノズルアームにより前記ノズルホルダが前記天板の中心部に設けられた開口部に挿入可能である、請求項12記載の基板処理装置。
- 前記第1ノズル及び前記第2ノズルは相対移動不能にノズルホルダに固定され、前記ノズルホルダは、前記天板の中心部に設けられた貫通穴の形態の開口部に挿入することができ、このときに前記ノズルホルダが前記液受けカップの上部開口部を閉塞するようになっている、請求項12記載の基板処理装置。
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