JP7192588B2 - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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Description
前記処理容器内にて基板を載置する載置部と、
前記載置部に載置された前記基板に、有機膜を成膜するための成膜ガスを供給する成膜ガス供給部と、
前記載置部に載置された前記基板を当該基板に非接触で加熱し、前記有機膜の表面部を除去する加熱部と、
を備える。
なお、既述したように窓部41は光の透過率が100%ではない。従って、ウエハWから発する放射線の一部のみが窓部41を透過して非接触温度計41に放射されることになる。つまり、実際のウエハWの温度よりも検出温度は低くなるが、制御部10は検出温度に補正値を加算して補正し、この補正された温度をウエハWの検出温度として取り扱う。
続いて、既述の実施形態に関連して行われた評価試験について説明する。
(評価試験1)
評価試験1として、上記の実施形態で説明したように、ウエハWを加熱してポリ尿素膜の表面部を除去するアニール処理を行った。つまり、ウエハWをプラズマに曝すことなく、ポリ尿素膜を除去した。処理時のウエハWの温度については、ウエハW毎に変更した。そして、処理後の各ウエハWについて、ポリ尿素膜73の除去レート(除去されたポリ尿素膜の膜厚/処理時間)を算出した。また、比較試験1として、アルゴンガス及び酸素ガスを処理容器内に供給し、これらのガスをプラズマ化して、真空雰囲気でウエハWの表面に形成されたポリ尿素膜の表面部をエッチングした。この比較試験1でも評価試験1と同様に、ウエハW毎に温度を変更して処理を行った。そして、処理後の各ウエハWについてポリ尿素膜の除去レート(エッチングレート)を算出した。
評価試験2として、試験用の装置を用いて上記の基板処理装置1のアニール処理と同様の処理を行い、ウエハW表面に形成されたポリ尿素膜の表面部を除去した後、ウエハWに残留したポリ尿素膜の膜厚を測定した。ウエハWには、膜厚が50nm、100nm、200nm、500nmとなるようにポリ尿素膜を形成しており、そのように膜厚が50nm、100nm、200nm、500nmであるウエハWに対して行った試験を夫々評価試験2-1、2-2、2-3、2-4とする。そして、これら評価試験2-1~2-4については、処理時におけるウエハWの温度をウエハW毎に変更しており、変更した範囲は260℃~300℃である。
既述の実施形態と同様に、パターンを形成する凹部72が形成された層71を備えるウエハW表面にポリ尿素膜73を成膜し、ウエハWの断面の画像を取得した。この成膜処理については、膜厚が100nmとなるように設定して行った。そしてこの成膜後、ウエハWを290℃に加熱するアニール処理を行い、ポリ尿素膜73の表面部を除去し、ウエハWの断面の画像を取得した。このような成膜処理、アニール処理及びアニール処理前後の断面画像の取得を、凹部72の深さが同じで、パターンのハーフピッチが互いに異なる複数のウエハWについて行った。このハーフピッチとしては夫々、40nm、80nm、120nm、150nm、200nm、250nm、300nmである。
評価試験4(4-1~4-8)として、表面にポリ尿素膜の形成を含む各種の処理を行った基板及び表面に処理を行わないシリコン製の基板の各表面について、XPS(X線光電分光法)を行い、C1sの光電子放出強度を測定した。以下、評価試験4-1~4-8について具体的に述べる。評価試験4-1として、上記の処理を行わないベアシリコンである基板の表面について測定を行った。評価試験4-2として、膜厚が150nmとなるようにポリ尿素膜を基板に成膜する成膜処理を行った後、N2ガス雰囲気にて350℃で5分間加熱するアニール処理を行った後の基板の表面について測定を行った。評価試験4-3~4-8として、成膜処理後でアニール処理前において、基板をプラズマ曝したことを除いては評価試験4-2と同様に処理した基板の表面について測定を行った。評価試験4-3~4-8間でプラズマを生成するためのガスは異なっている。評価試験4-3、4-4、4-5、4-6、4-7、4-8では、Ar(アルゴン)ガス、CO2(二酸化炭素)ガス、H2(水素)ガス及びN2ガスの混合ガス、CF4(四フッ化メタン)ガス、C4F8(オクタフルオロシクロブタン)ガスにより夫々プラズマを形成した。
評価試験5として、ウエハWを加熱して、成膜ガスを供給してポリ尿素膜を形成し、処理後のウエハWよりデポレート(ポリ尿素膜の膜厚/成膜処理時間)を算出した。複数のウエハWについて処理を行い、ウエハW毎に成膜処理時の温度を80℃~95℃の範囲内で変更した。
1 基板処理装置
11 処理容器
2 載置台
4 光照射部
5 ガス供給部
73 ポリ尿素膜
Claims (11)
- 内部に真空雰囲気が形成される処理容器と、
前記処理容器内にて基板を載置する載置部と、
前記載置部に載置された前記基板に、有機膜を成膜するための成膜ガスを供給する成膜ガス供給部と、
前記載置部に載置された前記基板を当該基板に非接触で加熱し、前記有機膜の表面部を除去する加熱部と、
前記載置部に基板が載置されていないときに、当該載置部における前記基板の載置領域の外側に成膜された前記有機膜を除去するクリーニング機構と、
前記基板の載置領域に光照射する第1の光照射部と、前記クリーニング機構を構成すると共に前記第1の光照射部とは独立して前記載置領域の外側に光照射して加熱する第2の光照射部と、を含む光照射部と、
を備える基板処理装置。 - 前記加熱部は、前記基板に光照射して加熱する光照射部である請求項1記載の基板処理装置。
- 前記基板への成膜ガスの供給と、当該成膜ガスの供給に続く基板への光照射とを処理サイクルとすると、1つの当該基板に対して前記処理サイクルが繰り返し行われるように制御信号を出力する制御部が設けられる請求項2記載の基板処理装置。
- 前記第2の光照射部は、
レーザー光を照射するレーザー光照射部と、
当該レーザー光を反射して前記載置部の周縁部に照射する反射部材と、
前記レーザー光の照射位置が前記載置部の周縁部に沿って移動するように、前記反射部材を前記載置部に対して相対的に移動させる移動機構と、を備える請求項1ないし3のいずれか一つに記載の基板処理装置。 - 前記光照射部は、
光源と、当該光源から照射される光を透過して前記基板に供給すると共に前記処理容器の内壁面を形成する導光部材と、を備え、
前記導光部材を加熱する導光部材用の加熱部が設けられる請求項2ないし4のいずれか一つに記載の基板処理装置。 - 前記成膜ガス供給部が前記成膜ガスを供給するときに、前記導光部材用の加熱部は導光部材の温度が前記基板の温度よりも高い温度になるように加熱する請求項5記載の基板処理装置。
- 前記光源から照射される光の吸光による前記導光部材の蓄熱と、前記導光部材用の加熱部による加熱とにより、前記基板への光照射が行われるときに前記導光部材は、前記有機膜が解重合する温度とされる請求項5または6記載の基板処理装置。
- 前記光照射部から前記基板に光照射されるときに、前記載置部を冷却する冷却部が設けられる請求項2ないし7のいずれか1つに記載の基板処理装置。
- 前記有機膜は、重合体である請求項1ないし8のいずれか一つに記載の基板処理装置。
- 前記重合体は、尿素結合を有する重合体である請求項9記載の基板処理装置。
- 処理容器の内部に真空雰囲気を形成する工程と、
前記処理容器内の載置部に基板を載置する工程と、
前記載置部に載置された前記基板に、成膜ガス供給部により成膜ガスを供給して有機膜を成膜する工程と、
前記載置部に載置された前記基板を当該基板に非接触の加熱部により加熱し、前記有機膜の表面部を除去する工程と、
前記基板の載置領域に第1の光照射部により光照射する工程と、
前記載置部に基板が載置されていないときに、クリーニング機構を構成すると共に前記第1の光照射部とは独立して前記載置領域の外側に光照射して加熱するための第2の光照射部による光照射を行い、当該載置部における前記基板の載置領域の外側に成膜された前記有機膜を除去する工程と、
を備える基板処理方法。
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