JP6123688B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP6123688B2 JP6123688B2 JP2014014575A JP2014014575A JP6123688B2 JP 6123688 B2 JP6123688 B2 JP 6123688B2 JP 2014014575 A JP2014014575 A JP 2014014575A JP 2014014575 A JP2014014575 A JP 2014014575A JP 6123688 B2 JP6123688 B2 JP 6123688B2
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- 230000008021 deposition Effects 0.000 title claims description 5
- 239000010408 film Substances 0.000 claims description 93
- 238000000034 method Methods 0.000 claims description 63
- 238000012545 processing Methods 0.000 claims description 45
- 238000004140 cleaning Methods 0.000 claims description 41
- 238000000926 separation method Methods 0.000 claims description 28
- 239000003507 refrigerant Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 23
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 10
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 239000007789 gas Substances 0.000 description 270
- 235000012431 wafers Nutrition 0.000 description 64
- 238000012546 transfer Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 230000001965 increasing effect Effects 0.000 description 11
- 239000012495 reaction gas Substances 0.000 description 11
- 238000011144 upstream manufacturing Methods 0.000 description 8
- 238000010926 purge Methods 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Description
真空容器内に配置され、その一面側に設けられる載置領域に基板を載置して公転させるための回転テーブルと、
前記基板に熱分解温度が1気圧下で520℃以上である処理ガスを供給する処理ガス供給部と、
前記基板を600℃以上に加熱して成膜処理するために、前記回転テーブルを加熱する加熱部と、を備え、
前記処理ガス供給部は、
前記回転テーブルに載置された基板の通過領域に対向して設けられた複数の処理ガスの吐出孔を有するガスシャワーヘッドと、前記成膜処理時に、前記ガスシャワーヘッドにおける前記基板の通過領域に対向する対向部を、前記処理ガスの熱分解温度より低い温度に冷却するための冷却機構と、を備え、
前記成膜処理時において、前記冷却機構は前記ガスシャワーヘッドの前記対向部を70℃以下に冷却することを特徴とする。
整流板56、57は対向面47と共に、回転テーブル2によって公転するウエハWの通過領域に対向する対向部として構成される。
D 分離領域
P1、P2 処理領域
1 成膜装置
11 真空容器
2 回転テーブル
21 凹部
29 通流空間
31、32 分離ガスノズル
41、42 ガスシャワーヘッド
47 対向面
48 ガス吐出孔
Claims (7)
- 処理ガスを基板に供給して薄膜を得る成膜装置であって、
真空容器内に配置され、その一面側に設けられる載置領域に基板を載置して公転させるための回転テーブルと、
前記基板に熱分解温度が1気圧下で520℃以上である処理ガスを供給する処理ガス供給部と、
前記基板を600℃以上に加熱して成膜処理するために、前記回転テーブルを加熱する加熱部と、を備え、
前記処理ガス供給部は、
前記回転テーブルに載置された基板の通過領域に対向して設けられた複数の処理ガスの吐出孔を有するガスシャワーヘッドと、前記成膜処理時に、前記ガスシャワーヘッドにおける前記基板の通過領域に対向する対向部を、前記処理ガスの熱分解温度より低い温度に冷却するための冷却機構と、を備え、
前記成膜処理時において、前記冷却機構は前記ガスシャワーヘッドの前記対向部を70℃以下に冷却することを特徴とする成膜装置。 - 前記回転テーブルの回転方向に互いに離れて設けられ、基板に原料を吸着させるための原料ガスである第1の処理ガス及び前記原料と反応して反応生成物を生成する第2の処理ガスを夫々基板に供給してガス処理を行うための第1の処理ガス供給部及び第2の処理ガス供給部と、
成膜処理を行うときの前記回転テーブルの回転方向において、前記第1の処理ガス供給部と第2の処理ガス供給部との間に、各処理ガスを分離するための分離ガスが供給される分離領域と、を備え、
前記ガスシャワーヘッドを含む処理ガス供給部は、第1の処理ガス供給部に相当することを特徴とする請求項1記載の成膜装置。 - 前記回転テーブルの一面側へフッ素系ガスであるクリーニングガスを供給するクリーニングガス供給部が設けられ、
前記クリーニングガスの供給時において、前記ガスシャワーヘッドの対向部を70℃以下に冷却することを特徴とする請求項1または2記載の成膜装置。 - 前記クリーニングガス供給時に、前記回転テーブルの一面側の表面は、前記加熱部により600℃以上に加熱されることを特徴とする請求項3記載の成膜装置。
- 前記ガス吐出孔は、
前記回転テーブルの中心側から周縁側へ向かう列を形成し、
当該ガス吐出孔の列が6〜12個設けられることを特徴とする請求項1ないし4のいずれか一つに記載の成膜装置。 - 前記冷却機構は、前記ガスシャワーヘッドに設けられた冷媒の流路を備えることを特徴とする請求項1ないし5のいずれか一つに記載の成膜装置。
- 前記処理ガスは、基板にシリコンを主成分とする膜を成膜するために当該シリコンを含むガスであることを特徴とする請求項1ないし6のいずれか一つに記載の成膜装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2014014575A JP6123688B2 (ja) | 2014-01-29 | 2014-01-29 | 成膜装置 |
US14/604,827 US20150211119A1 (en) | 2014-01-29 | 2015-01-26 | Film deposition apparatus |
TW104102626A TWI613313B (zh) | 2014-01-29 | 2015-01-27 | 成膜裝置 |
KR1020150013383A KR101852233B1 (ko) | 2014-01-29 | 2015-01-28 | 성막 방법 |
CN201510047084.9A CN104805416B (zh) | 2014-01-29 | 2015-01-29 | 成膜装置 |
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JP2014014575A JP6123688B2 (ja) | 2014-01-29 | 2014-01-29 | 成膜装置 |
Publications (2)
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JP2015142038A JP2015142038A (ja) | 2015-08-03 |
JP6123688B2 true JP6123688B2 (ja) | 2017-05-10 |
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US (1) | US20150211119A1 (ja) |
JP (1) | JP6123688B2 (ja) |
KR (1) | KR101852233B1 (ja) |
CN (1) | CN104805416B (ja) |
TW (1) | TWI613313B (ja) |
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JP6305314B2 (ja) * | 2014-10-29 | 2018-04-04 | 東京エレクトロン株式会社 | 成膜装置およびシャワーヘッド |
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JP6700156B2 (ja) | 2016-11-16 | 2020-05-27 | 株式会社ニューフレアテクノロジー | 成膜装置 |
JP6816634B2 (ja) * | 2017-02-28 | 2021-01-20 | 東京エレクトロン株式会社 | 成膜装置 |
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JP2012023221A (ja) * | 2010-07-15 | 2012-02-02 | Hitachi Kokusai Electric Inc | 半導体デバイスの製造方法 |
JP2012079919A (ja) * | 2010-10-01 | 2012-04-19 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体製造方法 |
TW201335418A (zh) * | 2012-02-17 | 2013-09-01 | Tokyo Electron Ltd | Mocvd反應器用淋灑頭、mocvd反應器、mocvd裝置、以及潔淨方法 |
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CN104805416B (zh) | 2019-07-30 |
US20150211119A1 (en) | 2015-07-30 |
KR101852233B1 (ko) | 2018-04-25 |
TWI613313B (zh) | 2018-02-01 |
JP2015142038A (ja) | 2015-08-03 |
TW201540865A (zh) | 2015-11-01 |
KR20150090851A (ko) | 2015-08-06 |
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