JP6277952B2 - 基板処理方法、記憶媒体及び加熱装置 - Google Patents
基板処理方法、記憶媒体及び加熱装置 Download PDFInfo
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Description
塗布膜の成分を気化させて膜厚を小さくするために、基板を加熱する膜除去工程と、
前記膜除去工程の後に、塗布膜の周囲の酸素を介して前記架橋剤によって行われる架橋反応によって当該塗布膜を硬化させるために基板を加熱する膜硬化工程と、
を備え、
前記膜硬化した塗布膜の平均膜厚が、前記膜除去工程の前の塗布膜の平均膜厚の80%以下となるように前記膜除去工程が行われ、
前記膜除去工程は、前記基板の周囲の雰囲気の酸素濃度が100ppm以下である前記架橋反応が起らない第1の酸素濃度の雰囲気で、前記原料化合物及び架橋剤が気化する温度で基板を加熱する工程を含み、
前記膜硬化工程は、前記架橋反応が起きるように第1の酸素濃度よりも高い第2の酸素濃度の雰囲気で基板を加熱する工程を含むことを特徴とする。
前記コンピュータプログラムは、上記のいずれか一項に記載された基板処理方法を実行するようにステップ群が組まれていることを特徴とする。
また、本発明の加熱装置は、その成分として塗布膜の原料化合物と、複数の当該原料化合物同士を架橋して有機化合物を形成するための架橋剤と、を含み、加熱されることにより周囲の酸素を介して架橋反応が起きる有機膜である塗布膜が表面に形成された基板を加熱する加熱装置において、
前記基板が載置される処理空間を形成する処理容器と、
前記処理空間にて載置された基板を加熱する加熱機構と、
前記処理空間の酸素濃度を変更する酸素濃度変更部と、
前記塗布膜の成分を気化させて膜厚を小さくすると共に塗布膜が硬化することを防ぐために、前記基板の周囲の雰囲気の酸素濃度が100ppm以下である前記架橋反応が起らない第1の酸素濃度の雰囲気を前記処理空間に形成して前記原料化合物及び架橋剤が気化する温度で基板を加熱する第1のステップと、その後前記架橋反応を起こして塗布膜を硬化させるために前記処理空間に第1の酸素濃度よりも高い第2の酸素濃度の雰囲気を形成して基板を加熱する第2のステップと、が実行されるように制御信号を出力する制御部と、を備え、
前記第2のステップは、膜硬化した塗布膜の平均膜厚が、前記第1のステップを行う前の塗布膜の平均膜厚の80%以下となるように行われることを特徴とする。
本発明の基板処理方法を実施するための実施形態の一例である成膜装置1について、図1の平面図を参照しながら説明する。成膜装置1は、キャリアステーション1Aと処理ステーション1Bとにより構成され、これらのステーション1A、1Bは、互いに横方向に接続されている。以降、キャリアステーション1A側を前方側、処理ステーション1B側を後方側として説明する。
第2の実施形態として、第1の実施形態で説明した熱架橋タイプの有機材料50とは異なる有機材料を用いる場合における成膜処理について説明する。この第2の実施形態の有機材料は、溶媒、架橋剤52、ポリマー53及び触媒54の他に、例えば酸を含む化合物を含み、周囲の酸素濃度が低い雰囲気中においてもこの酸の作用により架橋反応が進行する。このように架橋反応の進行に周囲の酸素を必要としない有機材料、有機膜を、酸架橋タイプの有機材料、酸架橋タイプの有機膜と夫々記載する場合がある。このように周囲の酸素を必要としないことを除いて、第2の実施形態の有機材料は、第1の実施形態の有機材料と同様である。
評価試験1
続いて、本発明に関連して行われた評価試験について説明する。評価試験1では、第1の実施形態で説明した熱架橋タイプの有機材料50を塗布して有機膜51を形成したウエハWについて、夫々異なる手法で処理を行った。評価試験1−1として、加熱モジュール3にて処理空間40を大気雰囲気として60秒間加熱処理を行った。評価試験1−2として、背景技術の項目で説明した紫外線照射を60秒間行い、有機膜51の表面を除去した。評価試験1−3として、第1の実施形態と同様に処理空間40にN2ガスを供給し、当該処理空間40を架橋反応が起らないように酸素濃度が低い雰囲気としてウエハWを60秒間加熱処理し、有機膜51の表面を昇華させて除去した。このように処理した各ウエハWの有機膜51の膜厚を測定した。
評価試験2としては、含まれる成分が互いに異なる3種類の有機材料(C1、C2、C3とする)を互いに異なるウエハWに夫々塗布して有機膜を形成した。有機材料C1は、第1の実施形態で説明した熱架橋タイプであり、有機材料C2、C3は、第2の実施形態で説明した酸架橋タイプである。そのように有機膜を形成したこれらのウエハWについて、各実施形態で説明したように処理空間40にN2ガスを供給して、酸素濃度を低下させた雰囲気(以降、低酸素雰囲気と記載する)で加熱し、有機膜の表面を昇華させて除去した。その後、有機膜の膜厚を測定し、加熱前の有機膜の膜厚に対する膜減り量(%)を算出した。
評価試験3としては、第2の実施形態で説明した酸架橋タイプの有機材料を、複数のウエハWに塗布して有機膜を形成し、各ウエハWを加熱モジュール3にて互いに異なる条件で加熱した。この有機材料の耐熱温度、即ち有機材料が分解する温度の下限は500℃以下である。評価試験3−1として、大気雰囲気にて450℃で加熱した。評価試験3−2として、低酸素雰囲気にて450℃で加熱した。評価試験3−3として、大気雰囲気にて600℃で加熱した。評価試験3−4として、低酸素雰囲気にて600℃で加熱した。つまり、評価試験3−1、3−2では昇華による膜減りが起り難く、評価試験3−3、3−4では昇華による膜減りが起りやすい温度で加熱しており、加熱時間は夫々60秒とした。そして、加熱した各ウエハWは、ドライエッチング装置にてCF4(四フッ化炭素)を用いて有機膜をエッチングし、エッチングレート(単位:nm/分)を測定した。
1 成膜装置
21 塗布モジュール
3、7 加熱モジュール
31 熱板
40 処理空間
41 蓋体
50 有機材料
51 有機膜
52 架橋剤
53 ポリマー
61 下層膜
Claims (8)
- 表面にパターンが形成された基板に塗布液を塗布して、その成分として塗布膜の原料化合物と、複数の当該原料化合物同士を架橋して有機化合物を形成するための架橋剤とを含む有機膜である塗布膜を形成する塗布工程と、
塗布膜の成分を気化させて膜厚を小さくするために、基板を加熱する膜除去工程と、
前記膜除去工程の後に、塗布膜の周囲の酸素を介して前記架橋剤によって行われる架橋反応によって当該塗布膜を硬化させるために基板を加熱する膜硬化工程と、
を備え、
前記膜硬化した塗布膜の平均膜厚が、前記膜除去工程の前の塗布膜の平均膜厚の80%以下となるように前記膜除去工程が行われ、
前記膜除去工程は、前記基板の周囲の雰囲気の酸素濃度が100ppm以下である前記架橋反応が起らない第1の酸素濃度の雰囲気で、前記原料化合物及び架橋剤が気化する温度で基板を加熱する工程を含み、
前記膜硬化工程は、前記架橋反応が起きるように第1の酸素濃度よりも高い第2の酸素濃度の雰囲気で基板を加熱する工程を含むことを特徴とする基板処理方法。 - 膜除去工程及び膜硬化工程を行った後に、前記塗布工程を繰り返し行うことを特徴とする請求項1記載の基板処理方法。
- 前記膜除去工程における基板の加熱温度は、膜硬化工程における基板の加熱温度よりも高いことを特徴とする請求項1または2記載の基板処理方法。
- 基板を処理する基板処理装置に用いられるコンピュータプログラムを記憶する記憶媒体であって、
前記コンピュータプログラムは、請求項1ないし3のいずれか一項に記載された基板処理方法を実行するようにステップ群が組まれていることを特徴とする記憶媒体。 - その成分として塗布膜の原料化合物と、複数の当該原料化合物同士を架橋して有機化合物を形成するための架橋剤と、を含み、加熱されることにより周囲の酸素を介して架橋反応が起きる有機膜である塗布膜が表面に形成された基板を加熱する加熱装置において、
前記基板が載置される処理空間を形成する処理容器と、
前記処理空間にて載置された基板を加熱する加熱機構と、
前記処理空間の酸素濃度を変更する酸素濃度変更部と、
前記塗布膜の成分を気化させて膜厚を小さくすると共に塗布膜が硬化することを防ぐために、前記基板の周囲の雰囲気の酸素濃度が100ppm以下である前記架橋反応が起らない第1の酸素濃度の雰囲気を前記処理空間に形成して前記原料化合物及び架橋剤が気化する温度で基板を加熱する第1のステップと、その後前記架橋反応を起こして塗布膜を硬化させるために前記処理空間に第1の酸素濃度よりも高い第2の酸素濃度の雰囲気を形成して基板を加熱する第2のステップと、が実行されるように制御信号を出力する制御部と、を備え、
前記第2のステップは、膜硬化した塗布膜の平均膜厚が、前記第1のステップを行う前の塗布膜の平均膜厚の80%以下となるように行われることを特徴とする加熱装置。 - 前記制御部は、前記第1のステップにおける基板の加熱温度が、前記第2のステップにおける基板の加熱温度よりも高くなるように制御信号を出力することを特徴とする請求項5記載の加熱装置。
- 前記酸素濃度変更部は、基板の裏面に第1の酸素濃度の雰囲気及び第2の酸素濃度の雰囲気を形成するためのガスを供給してパージするガス供給部と、
前記基板の表面側から前記処理空間を排気する排気部と、
を備えることを特徴とする請求項5または6記載の加熱装置。 - 前記処理容器は容器本体と、当該容器本体に対して相対的に昇降する蓋体とを備え、
蓋体の下端より上方に基板を載置する載置部が設けられ、
前記加熱機構は、基板に光を照射して加熱する光照射部により構成されることを特徴とする請求項7記載の加熱装置。
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