JP7186832B2 - 光起電力電池及びラミネートの金属化 - Google Patents
光起電力電池及びラミネートの金属化 Download PDFInfo
- Publication number
- JP7186832B2 JP7186832B2 JP2021104969A JP2021104969A JP7186832B2 JP 7186832 B2 JP7186832 B2 JP 7186832B2 JP 2021104969 A JP2021104969 A JP 2021104969A JP 2021104969 A JP2021104969 A JP 2021104969A JP 7186832 B2 JP7186832 B2 JP 7186832B2
- Authority
- JP
- Japan
- Prior art keywords
- metal foil
- solar cell
- photovoltaic laminate
- patterned
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001465 metallisation Methods 0.000 title description 14
- 229910052751 metal Inorganic materials 0.000 claims description 391
- 239000002184 metal Substances 0.000 claims description 391
- 239000011888 foil Substances 0.000 claims description 302
- 238000000034 method Methods 0.000 claims description 168
- 239000008393 encapsulating agent Substances 0.000 claims description 64
- 238000000059 patterning Methods 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 25
- 238000010304 firing Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 37
- 238000001723 curing Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000005038 ethylene vinyl acetate Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 230000000007 visual effect Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- -1 polyethylene Polymers 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000004698 Polyethylene Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005242 forging Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Laminated Bodies (AREA)
Description
[項目1]
光起電力ラミネートの金属化方法であって、
第1封入材を実質的に透明な層上に配置する工程と、
第1太陽電池を上記第1封入材上に配置する工程と、
上記第1太陽電池と均一に接触する金属箔を上記第1太陽電池上に配置する工程と、
上記金属箔を上記第1太陽電池に接続する、金属結合を形成する工程とを含む、方法。
[項目2]
裏材を上記金属箔上に配置する工程と、
裏側層を上記裏材上に形成する工程と、
上記実質的に透明な層、上記第1封入材、上記第1太陽電池、上記金属箔、上記裏材、及び上記裏側層を結合して、光起電力ラミネートを形成する工程とを更に含む、項目1に記載の方法。
[項目3]
第2太陽電池を上記第1封入材上に配置することを更に含む、項目1に記載の方法。
[項目4]
第1太陽電池を上記第1封入材上に配置する前に、複数の太陽電池を分類する工程を更に含み、上記第1太陽電池及び上記第2太陽電池の配置は、上記分類に従って行われる、項目3に記載の方法。
[項目5]
上記金属結合を形成する工程は、レーザー源を使用して金属コンタクト領域を形成する工程を含み、上記形成された金属コンタクト領域は上記金属箔を上記第1太陽電池に電気的に接続する、項目1に記載の方法。
[項目6]
上記金属結合を形成する工程は、
パターン化プロセスを行い、パターン化された金属箔及び余剰な金属箔を生じる工程と、
上記パターン化された金属箔を上記第1太陽電池に接続する、金属結合を形成する工程と、
上記余剰な金属箔を取り除く工程とを含む、項目1に記載の方法。
[項目7]
上記金属結合を形成する工程は、
キャリア媒体に取り付けられた予めパターン化されている金属箔を、上記第1太陽電池に接続する金属結合を形成する工程と、
上記金属結合を形成した後に、上記キャリア媒体を取り除く工程とを含む、項目1に記載の方法。
[項目8]
上記実質的に透明な層、上記第1封入材、上記第1太陽電池、上記金属箔、上記裏材、及び上記裏側層を結合して、光起電力ラミネートを形成する工程は、硬化、熱硬化、紫外線による硬化、及び光起電力を形成するための標準的積層プロセスの実施からなる群から選択される方法を行う工程を含む、項目1に記載の方法。
[項目9]
光起電力ラミネートを金属化する方法であって、上記光起電力ラミネートは、通常動作中に太陽に面する前面、及び上記前面と反対側の裏面を有し、上記方法は、
上記光起電力ラミネートの上記前面を含む、実質的に透明な層上に、第1封入材を配置する工程と、
第1太陽電池を上記第1封入材上に配置する工程と、
上記第1太陽電池の裏面と均一に接触する金属箔を上記第1太陽電池上に配置する工程と、
上記金属箔を上記第1太陽電池に接続する、金属結合を形成する工程、
裏材を上記金属箔上に配置する工程と、
裏側層を上記裏材層上に形成する工程と、
上記実質的に透明な層、上記第1封入材、上記第1太陽電池、上記金属箔、上記裏材、及び上記裏側層を硬化させて、光起電力ラミネートを形成する工程とを含む、方法。
[項目10]
光起電力ラミネートの金属化方法であって、
金属箔を受容媒体上に配置する工程と、
第1太陽電池を上記金属箔上に配置する工程と、
上記金属箔を上記第1太陽電池に接続する、金属結合を形成する工程とを含む、方法。
[項目11]
第1封入材を上記第1太陽電池上に配置する工程と、
実質的に透明な層を上記第1封入材上に配置する工程と、
裏材を上記金属箔上に配置する工程と、
裏側層を上記裏材上に形成する工程と、
上記実質的に透明な層、上記第1封入材、上記第1太陽電池、上記金属箔、上記裏材、及び上記裏側層を一緒に結合して、光起電力ラミネートを形成する工程とを更に含む、項目10に記載の方法。
[項目12]
金属箔を受容媒体上に配置する工程は、上記金属箔を、実質的に透明な層、犠牲ガラス、及び穿刺した媒体からなる群から選択される受容媒体上に配置する工程を含む、項目10に記載の方法。
[項目13]
上記第1太陽電池を上記金属箔上に配置する工程は、複数の太陽電池を上記金属箔上に配置する工程を含む、項目10に記載の方法。
[項目14]
第1太陽電池を金属箔上に配置する前に、複数の太陽電池を分類する工程を更に含み、上記第1太陽電池の配置は、上記分類に従って行われる、項目10に記載の方法。
[項目15]
上記金属結合を形成する工程は、レーザー源を使用して金属結合を形成する工程を含み、上記形成された金属結合は上記金属箔を上記第1太陽電池に電気的に接続する、項目10に記載の方法。
[項目16]
上記金属結合を形成する工程は、上記受容媒体を通じて上記金属箔にレーザーを発射し、上記金属箔を上記第1太陽電池に接続する金属結合を形成する、項目10に記載の方法。
[項目17]
上記金属結合を形成する工程は、
レーザーパターン化プロセスを行い、パターン化された金属箔及び余剰な金属箔を生じる工程と、
上記パターン化された金属箔及び上記第1太陽電池を接続する、金属結合を形成する工程と、
上記余剰な金属箔を取り除く工程とを含む、項目10に記載の方法。
[項目18]
上記金属結合を形成する工程は、
キャリア媒体に取り付けられた予めパターン化されている金属箔を、上記第1太陽電池に接続する金属結合を形成する工程と、
上記金属結合を形成した後に、上記キャリア媒体を取り除く工程とを含む、項目10に記載の方法。
[項目19]
上記実質的に透明な層、上記第1封入材、上記第1太陽電池、上記金属箔、上記裏材、及び上記裏側層を結合して、光起電力ラミネートを形成する工程は、硬化、熱硬化、紫外線による硬化、及び光起電力を形成するための標準的積層プロセスの実施からなる群から選択される方法を行う工程を含む、項目10に記載の方法。
[項目20]
金属箔を実質的に透明である受容媒体上に配置する工程でと、
第1太陽電池を上記第1太陽電池の裏面と均一に接触する上記金属箔上に配置する工程と、
上記受容媒体を通じて上記金属箔にレーザーを発射し、上記金属箔を上記第1太陽電池に接続する金属結合を形成する工程と、
第1封入材を上記第1太陽電池上に配置する工程と、
実質的に透明な層を上記第1封入材上に配置する工程と、
裏材を上記金属箔上に配置する工程と、
裏側層を上記裏材上に形成する工程と、
上記実質的に透明な層、上記第1封入材、上記第1太陽電池、上記金属箔、上記裏材、及び上記裏側層を一緒に硬化して、光起電力ラミネートを形成する工程とを更に含む、項目10に記載の方法。
Claims (13)
- 金属箔を第1太陽電池上に配置する工程であって、前記金属箔の第1表面は、前記第1太陽電池と接触する、工程と、
前記第1太陽電池上に第1パターン化金属箔及び第1余剰金属箔を形成すべく、前記金属箔をパターン化及び結合する工程と、
前記金属箔をパターン化及び結合する工程の後、前記第1太陽電池から前記第1余剰金属箔を取り除く工程と
を備え、
前記第1太陽電池上に前記第1パターン化金属箔及び前記第1余剰金属箔を形成すべく、前記金属箔をパターン化及び結合する工程は、
前記第1パターン化金属箔及び前記第1余剰金属箔を形成すべく、前記金属箔をレーザーパターン化する工程と、
前記第1パターン化金属箔を前記第1太陽電池の裏面にレーザー結合する工程と
を有する、光起電力ラミネートの製造方法。 - 前記金属箔をパターン化及び結合する工程は、
前記第1パターン化金属箔を前記第1太陽電池に電気的に接続する複数の金属結合を形成すべく、レーザーを前記金属箔の第2表面上に発射する工程
を有する、請求項1に記載の光起電力ラミネートの製造方法。 - 前記金属箔は、キャリア媒体に取り付けられている、請求項1又は2に記載の光起電力ラミネートの製造方法。
- 前記第1パターン化金属箔は、相互接続を含む、請求項1から3のいずれか一項に記載の光起電力ラミネートの製造方法。
- 前記相互接続を第2太陽電池に電気的に接続する工程
をさらに備える、請求項4に記載の光起電力ラミネートの製造方法。 - 前記第1パターン化金属箔は、第1コンタクトフィンガー及び第2コンタクトフィンガー含む、請求項1から3のいずれか一項に記載の光起電力ラミネートの製造方法。
- 前記第1コンタクトフィンガーは、前記第1太陽電池を超えて、第2太陽電池上へと延びる、請求項6に記載の光起電力ラミネートの製造方法。
- 前記金属箔を第2太陽電池上に配置する工程であって、前記金属箔の前記第1表面は、前記第2太陽電池と接触する、工程と、
前記第2太陽電池上に第2パターン化金属箔及び第2余剰金属箔を形成すべく、前記金属箔をパターン化及び結合する工程と、
前記金属箔を前記第2太陽電池にパターン化及び結合する工程の後、前記第2太陽電池から前記第2余剰金属箔を取り除く工程であって、その結果、前記第1太陽電池及び前記第2太陽電池は、前記第1太陽電池と前記第2太陽電池との間の前記金属箔の相互接続部分によって、お互いに電気的に接続される、工程と
をさらに備える、請求項1から3のいずれか一項に記載の光起電力ラミネートの製造方法。 - 前記第1パターン化金属箔、前記第2パターン化金属箔、及び前記相互接続部分は、金属の同一の連続的なシートである、請求項8に記載の光起電力ラミネートの製造方法。
- 第1太陽電池及び第2太陽電池を第1封入材上に配置する工程と、
金属箔を前記第1太陽電池の裏面上及び前記第2太陽電池の裏面上に配置する工程と、
前記第1太陽電池上に第1パターン化金属箔及び第1余剰金属箔を形成すべく、前記金属箔をパターン化及び結合する工程と、
前記第2太陽電池上に第2パターン化金属箔及び第2余剰金属箔を形成すべく、前記金属箔をパターン化及び結合する工程と、
前記第1太陽電池から前記第1余剰金属箔を、前記第2太陽電池から前記第2余剰金属箔を取り除く工程と、
裏側層を前記第1パターン化金属箔上及び前記第2パターン化金属箔上に配置する工程と
を備え、
前記第1太陽電池上に前記第1パターン化金属箔及び前記第1余剰金属箔を形成すべく、前記金属箔をパターン化及び結合する工程は、
前記第1パターン化金属箔及び前記第1余剰金属箔を形成すべく、前記金属箔をレーザーパターン化する工程と、
前記第1パターン化金属箔を前記第1太陽電池の前記裏面にレーザー結合する工程と
を有する、光起電力ラミネートの製造方法。 - 裏材を前記第1パターン化金属箔上及び前記第2パターン化金属箔上に配置する工程であって、前記裏材は、前記裏側層と前記第1パターン化金属箔及び前記第2パターン化金属箔との間に配置される、工程
をさらに備える、請求項10に記載の光起電力ラミネートの製造方法。 - 前記第1封入材を実質的に透明な層上に配置する工程
をさらに備える、請求項11に記載の光起電力ラミネートの製造方法。 - 前記第2太陽電池上に前記第2パターン化金属箔及び前記第2余剰金属箔を形成すべく、前記金属箔をパターン化及び結合する工程は、
前記第2パターン化金属箔及び前記第2余剰金属箔を形成すべく、前記金属箔をレーザーパターン化する工程と、
前記第2パターン化金属箔を前記第2太陽電池の前記裏面にレーザー結合する工程と
を有する、請求項10から12のいずれか一項に記載の光起電力ラミネートの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/931,747 US9666739B2 (en) | 2013-06-28 | 2013-06-28 | Photovoltaic cell and laminate metallization |
US13/931,747 | 2013-06-28 | ||
JP2018182848A JP2019050380A (ja) | 2013-06-28 | 2018-09-27 | 光起電力電池及びラミネートの金属化 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018182848A Division JP2019050380A (ja) | 2013-06-28 | 2018-09-27 | 光起電力電池及びラミネートの金属化 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021166298A JP2021166298A (ja) | 2021-10-14 |
JP7186832B2 true JP7186832B2 (ja) | 2022-12-09 |
Family
ID=52115977
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016523750A Active JP6412120B2 (ja) | 2013-06-28 | 2014-05-28 | 光起電力電池及びラミネートの金属化 |
JP2018182848A Pending JP2019050380A (ja) | 2013-06-28 | 2018-09-27 | 光起電力電池及びラミネートの金属化 |
JP2021104969A Active JP7186832B2 (ja) | 2013-06-28 | 2021-06-24 | 光起電力電池及びラミネートの金属化 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016523750A Active JP6412120B2 (ja) | 2013-06-28 | 2014-05-28 | 光起電力電池及びラミネートの金属化 |
JP2018182848A Pending JP2019050380A (ja) | 2013-06-28 | 2018-09-27 | 光起電力電池及びラミネートの金属化 |
Country Status (11)
Country | Link |
---|---|
US (4) | US9666739B2 (ja) |
EP (1) | EP3014664B1 (ja) |
JP (3) | JP6412120B2 (ja) |
KR (2) | KR102407562B1 (ja) |
CN (2) | CN108470787A (ja) |
AU (2) | AU2014303149B2 (ja) |
MX (1) | MX351411B (ja) |
MY (1) | MY175032A (ja) |
SG (2) | SG10201800848RA (ja) |
TW (2) | TWI732085B (ja) |
WO (1) | WO2014209532A1 (ja) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013162498A1 (en) * | 2012-04-23 | 2013-10-31 | Empire Technology Development Llc | Lift-off layer for separation and disposal of energy conversion devices |
US9666739B2 (en) * | 2013-06-28 | 2017-05-30 | Sunpower Corporation | Photovoltaic cell and laminate metallization |
US9818903B2 (en) | 2014-04-30 | 2017-11-14 | Sunpower Corporation | Bonds for solar cell metallization |
US9735308B2 (en) * | 2014-09-18 | 2017-08-15 | Sunpower Corporation | Foil-based metallization of solar cells using removable protection layer |
CN105609584B (zh) * | 2014-11-19 | 2023-10-24 | 苏州易益新能源科技有限公司 | 一种太阳能电池组件生产方法 |
US9620661B2 (en) | 2014-12-19 | 2017-04-11 | Sunpower Corporation | Laser beam shaping for foil-based metallization of solar cells |
US9997651B2 (en) * | 2015-02-19 | 2018-06-12 | Sunpower Corporation | Damage buffer for solar cell metallization |
CN104795465A (zh) * | 2015-04-10 | 2015-07-22 | 杭州福斯特光伏材料股份有限公司 | 一种太阳能电池组件的封装方法 |
US9620655B1 (en) * | 2015-10-29 | 2017-04-11 | Sunpower Corporation | Laser foil trim approaches for foil-based metallization for solar cells |
USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
US10115855B2 (en) * | 2016-09-30 | 2018-10-30 | Sunpower Corporation | Conductive foil based metallization of solar cells |
US11908958B2 (en) | 2016-12-30 | 2024-02-20 | Maxeon Solar Pte. Ltd. | Metallization structures for solar cells |
US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
USD877964S1 (en) | 2017-08-09 | 2020-03-10 | Flex Ltd. | Lighting module |
USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
WO2019195805A1 (en) * | 2018-04-06 | 2019-10-10 | Sunpower Corporation | Systems for laser assisted metallization of substrates |
WO2019195804A1 (en) * | 2018-04-06 | 2019-10-10 | Sunpower Corporation | Laser assisted metallization process for solar cell circuit formation |
US11362234B2 (en) | 2018-04-06 | 2022-06-14 | Sunpower Corporation | Local patterning and metallization of semiconductor structures using a laser beam |
CN112534589A (zh) * | 2018-04-06 | 2021-03-19 | 太阳能公司 | 使用激光束对半导体结构进行局部图案化和金属化 |
WO2019195793A1 (en) * | 2018-04-06 | 2019-10-10 | Sunpower Corporation | Laser assisted metallization process for solar cell stringing |
WO2019195803A1 (en) * | 2018-04-06 | 2019-10-10 | Sunpower Corporation | Laser assisted metallization process for solar cell fabrication |
US10321603B1 (en) * | 2018-07-23 | 2019-06-11 | TAS Energy, Inc. | Electrical power distribution for immersion cooled information systems |
WO2020100528A1 (ja) * | 2018-11-13 | 2020-05-22 | 株式会社カネカ | 太陽電池モジュール及びその製造方法 |
US11165387B2 (en) | 2020-03-03 | 2021-11-02 | Sunpower Corporation | Current cyclical testing for PV electrical connections |
CN116944724A (zh) | 2023-08-09 | 2023-10-27 | 晶科能源股份有限公司 | 电池串的焊接方法以及串焊机 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080173390A1 (en) | 2007-01-22 | 2008-07-24 | Mukundan Narasimhan | Finger pattern formation for thin film solar cells |
JP2009130116A (ja) | 2007-11-22 | 2009-06-11 | Sharp Corp | 素子間配線部材、光電変換素子およびこれらを用いた光電変換素子接続体ならびに光電変換モジュール |
DE102011052318A1 (de) | 2011-08-01 | 2013-02-07 | Q-Cells Se | Solarmodul und Solarmodul-Herstellungsverfahren |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6459032B1 (en) * | 1995-05-15 | 2002-10-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US5972732A (en) * | 1997-12-19 | 1999-10-26 | Sandia Corporation | Method of monolithic module assembly |
US5951786A (en) | 1997-12-19 | 1999-09-14 | Sandia Corporation | Laminated photovoltaic modules using back-contact solar cells |
JPH11243224A (ja) | 1997-12-26 | 1999-09-07 | Canon Inc | 光起電力素子モジュール及びその製造方法並びに非接触処理方法 |
JP2004111464A (ja) | 2002-09-13 | 2004-04-08 | Npc:Kk | 太陽電池用のストリング製造装置及び太陽電池モジュール製造方法 |
JP2006041349A (ja) * | 2004-07-29 | 2006-02-09 | Canon Inc | 光起電力素子およびその製造方法 |
US7759158B2 (en) * | 2005-03-22 | 2010-07-20 | Applied Materials, Inc. | Scalable photovoltaic cell and solar panel manufacturing with improved wiring |
DE102006044936B4 (de) * | 2006-09-22 | 2008-08-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Metallisierung von Solarzellen und dessen Verwendung |
US8035028B2 (en) | 2006-10-09 | 2011-10-11 | Solexel, Inc. | Pyramidal three-dimensional thin-film solar cells |
US20080216887A1 (en) | 2006-12-22 | 2008-09-11 | Advent Solar, Inc. | Interconnect Technologies for Back Contact Solar Cells and Modules |
JP5252472B2 (ja) * | 2007-09-28 | 2013-07-31 | シャープ株式会社 | 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール |
US20120125256A1 (en) | 2007-10-06 | 2012-05-24 | Solexel, Inc. | Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template |
GB2459274A (en) | 2008-04-15 | 2009-10-21 | Renewable Energy Corp Asa | Wafer based solar panels |
EP2289110A2 (en) * | 2008-04-29 | 2011-03-02 | Applied Materials, Inc. | Photovoltaic modules manufactured using monolithic module assembly techniques |
JP2011201928A (ja) * | 2008-07-29 | 2011-10-13 | Bridgestone Corp | 太陽電池用封止膜、及びこれを用いた太陽電池 |
JP5410050B2 (ja) * | 2008-08-08 | 2014-02-05 | 三洋電機株式会社 | 太陽電池モジュール |
JP5131847B2 (ja) * | 2008-09-09 | 2013-01-30 | シャープ株式会社 | 太陽電池モジュールおよびその製造方法 |
JP5643294B2 (ja) * | 2009-04-22 | 2014-12-17 | テトラサン インコーポレイテッド | 太陽電池内の機能膜の局所的レーザ転化による局所的金属接触子 |
JP2010287682A (ja) * | 2009-06-10 | 2010-12-24 | Mitsui Chemicals Inc | 太陽電池モジュール用裏面保護シート |
US20120097245A1 (en) * | 2009-07-02 | 2012-04-26 | Tomohiro Nishina | Solar cell with interconnection sheet, solar cell module, and method for producing solar cell with internconnection sheet |
US20110017266A1 (en) | 2009-07-24 | 2011-01-27 | Farrell James F | Thin film photovoltaic module having a lamination layer for enhanced reflection and photovoltaic output |
TW201106490A (en) * | 2009-08-12 | 2011-02-16 | Day4 Energy Inc | Method for interconnecting back contact solar cells and photovoltaic module employing same |
JP2011054831A (ja) * | 2009-09-03 | 2011-03-17 | Sharp Corp | バックコンタクト型太陽電池セル、太陽電池ストリングおよび太陽電池モジュール |
US20110056532A1 (en) * | 2009-09-09 | 2011-03-10 | Crystal Solar, Inc. | Method for manufacturing thin crystalline solar cells pre-assembled on a panel |
JP2011091327A (ja) * | 2009-10-26 | 2011-05-06 | Sharp Corp | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
CN102110727A (zh) * | 2009-11-20 | 2011-06-29 | 日立电线株式会社 | 太阳电池模块,以及太阳电池模块用布线电路板 |
US8759664B2 (en) * | 2009-12-28 | 2014-06-24 | Hanergy Hi-Tech Power (Hk) Limited | Thin film solar cell strings |
EP2569804A2 (en) * | 2010-05-10 | 2013-03-20 | The University of Toledo | Rapid thermal activation of flexible photovoltaic cells and modules |
EP2577740B1 (de) | 2010-05-28 | 2018-11-14 | SolarWorld Industries GmbH | Verfahren zum kontaktieren und verschalten von solarzellen und damit hergestellter solarzellenverbund |
US20110297208A1 (en) | 2010-06-07 | 2011-12-08 | Eurotron B.V. | Method for the production of a solar panel and semi-product |
US20130000715A1 (en) * | 2011-03-28 | 2013-01-03 | Solexel, Inc. | Active backplane for thin silicon solar cells |
CN102059843A (zh) * | 2010-10-19 | 2011-05-18 | 张云峰 | 太阳能电池板层压固化设备 |
WO2012058053A2 (en) * | 2010-10-29 | 2012-05-03 | Applied Materials, Inc. | Monolithic module assembly using back contact solar cells and metal ribbon |
JP5643620B2 (ja) * | 2010-11-29 | 2014-12-17 | デクセリアルズ株式会社 | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
WO2012129033A2 (en) * | 2011-03-18 | 2012-09-27 | Applied Materials, Inc. | Conductive foils having multiple layers and methods of forming same |
DE102011075352A1 (de) * | 2011-05-05 | 2012-11-08 | Solarworld Innovations Gmbh | Verfahren zum Rückseitenkontaktieren einer Silizium-Solarzelle und Silizium-Solarzelle mit einer solchen Rückseitenkontaktierung |
US20130137244A1 (en) | 2011-05-26 | 2013-05-30 | Solexel, Inc. | Method and apparatus for reconditioning a carrier wafer for reuse |
EP3300125B1 (en) | 2011-06-06 | 2020-01-15 | DSM IP Assets B.V. | Metal foil, patterned-laminate and a solar cell module |
CN106098842B (zh) * | 2011-07-06 | 2018-12-18 | 密歇根大学董事会 | 使用外延剥离和冷焊结合的半导体太阳能电池的集成太阳能收集器 |
EP2740157B1 (en) * | 2011-08-04 | 2015-04-29 | Imec | Interdigitated electrode formation |
WO2013046773A1 (ja) * | 2011-09-29 | 2013-04-04 | 三洋電機株式会社 | 太陽電池モジュール |
CN102437205A (zh) * | 2011-12-08 | 2012-05-02 | 常州天合光能有限公司 | 具有透明前电极的太阳能电池及其组件 |
US20130160825A1 (en) | 2011-12-22 | 2013-06-27 | E I Du Pont De Nemours And Company | Back contact photovoltaic module with glass back-sheet |
CN102544167B (zh) * | 2012-02-24 | 2014-07-02 | 上饶光电高科技有限公司 | 一种mwt太阳电池组件及其制作方法 |
CN102709337A (zh) * | 2012-04-27 | 2012-10-03 | 苏州阿特斯阳光电力科技有限公司 | 一种背接触太阳能电池片、使用电池片的太阳能组件及其制备方法 |
US9812592B2 (en) * | 2012-12-21 | 2017-11-07 | Sunpower Corporation | Metal-foil-assisted fabrication of thin-silicon solar cell |
US9666739B2 (en) * | 2013-06-28 | 2017-05-30 | Sunpower Corporation | Photovoltaic cell and laminate metallization |
-
2013
- 2013-06-28 US US13/931,747 patent/US9666739B2/en active Active
-
2014
- 2014-05-28 KR KR1020217010007A patent/KR102407562B1/ko active IP Right Grant
- 2014-05-28 EP EP14817379.2A patent/EP3014664B1/en active Active
- 2014-05-28 WO PCT/US2014/039813 patent/WO2014209532A1/en active Application Filing
- 2014-05-28 CN CN201810342392.8A patent/CN108470787A/zh active Pending
- 2014-05-28 MY MYPI2015003035A patent/MY175032A/en unknown
- 2014-05-28 CN CN201480032946.4A patent/CN105283965B/zh active Active
- 2014-05-28 JP JP2016523750A patent/JP6412120B2/ja active Active
- 2014-05-28 MX MX2015017421A patent/MX351411B/es active IP Right Grant
- 2014-05-28 SG SG10201800848RA patent/SG10201800848RA/en unknown
- 2014-05-28 SG SG11201510587QA patent/SG11201510587QA/en unknown
- 2014-05-28 KR KR1020167002069A patent/KR102238440B1/ko active IP Right Grant
- 2014-05-28 AU AU2014303149A patent/AU2014303149B2/en not_active Ceased
- 2014-06-20 TW TW106146274A patent/TWI732085B/zh active
- 2014-06-20 TW TW103121341A patent/TWI620336B/zh active
-
2017
- 2017-05-12 US US15/593,644 patent/US20170250297A1/en not_active Abandoned
-
2018
- 2018-03-07 AU AU2018201664A patent/AU2018201664B2/en active Active
- 2018-09-27 JP JP2018182848A patent/JP2019050380A/ja active Pending
-
2021
- 2021-04-14 US US17/230,371 patent/US11742444B2/en active Active
- 2021-06-24 JP JP2021104969A patent/JP7186832B2/ja active Active
-
2023
- 2023-07-13 US US18/221,600 patent/US20230361231A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080173390A1 (en) | 2007-01-22 | 2008-07-24 | Mukundan Narasimhan | Finger pattern formation for thin film solar cells |
JP2009130116A (ja) | 2007-11-22 | 2009-06-11 | Sharp Corp | 素子間配線部材、光電変換素子およびこれらを用いた光電変換素子接続体ならびに光電変換モジュール |
DE102011052318A1 (de) | 2011-08-01 | 2013-02-07 | Q-Cells Se | Solarmodul und Solarmodul-Herstellungsverfahren |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7186832B2 (ja) | 光起電力電池及びラミネートの金属化 | |
US10181535B2 (en) | Backplane reinforcement and interconnects for solar cells | |
US20160013335A1 (en) | Active backplane for thin silicon solar cells | |
KR102015591B1 (ko) | 박형 실리콘 태양 전지용 활성 후면판 | |
JP2016532319A (ja) | 金属化のための位置合わせ | |
AU2015267265B2 (en) | Alignment free solar cell metallization | |
US9735308B2 (en) | Foil-based metallization of solar cells using removable protection layer | |
US11646387B2 (en) | Laser assisted metallization process for solar cell circuit formation | |
JP2021521633A (ja) | 太陽電池ストリングのレーザー支援メタライゼーションプロセス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210702 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220525 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220607 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220823 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20220902 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20220913 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20221004 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221124 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221129 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7186832 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |