JP7182057B2 - 発光素子の製造方法 - Google Patents
発光素子の製造方法 Download PDFInfo
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- JP7182057B2 JP7182057B2 JP2019030156A JP2019030156A JP7182057B2 JP 7182057 B2 JP7182057 B2 JP 7182057B2 JP 2019030156 A JP2019030156 A JP 2019030156A JP 2019030156 A JP2019030156 A JP 2019030156A JP 7182057 B2 JP7182057 B2 JP 7182057B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 127
- 150000004767 nitrides Chemical class 0.000 claims description 105
- 238000003475 lamination Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Description
Claims (5)
- 第1導電型層を含む第1窒化物半導体層と、前記第1窒化物半導体層の上に形成される第1活性層と、前記第1活性層の上に形成され、第2導電型層を含む第2窒化物半導体層と、を有する半導体積層体における前記第2窒化物半導体層の一部および前記第1活性層の一部を除去して、前記第1窒化物半導体層の一部を前記第1活性層および前記第2窒化物半導体層から露出させる工程と、
前記第1活性層および前記第2窒化物半導体層を覆うマスクを形成する工程と、
前記第1活性層および前記第2窒化物半導体層を前記マスクで覆った状態で、前記第1窒化物半導体層の前記一部に第3窒化物半導体層を形成する工程と、
前記第3窒化物半導体層を形成した後、前記マスクを除去する工程と、
を備え、
前記マスクは、第1膜と第2膜とを含み、
前記マスクを形成する工程は、
少なくとも前記第2窒化物半導体層の上面を覆う前記第1膜を形成する工程と、
前記第1膜を覆い、前記第3窒化物半導体層を形成するときの温度よりも高い融点を有する前記第2膜を形成する工程と、を有し、
前記マスクを除去する工程において、前記第1膜を除去することにより前記第2膜を除去し、前記マスクをリフトオフする発光素子の製造方法。 - 前記第2膜の膜厚は、前記第1膜の膜厚よりも薄い請求項1記載の発光素子の製造方法。
- 前記マスクを形成する工程は、
前記半導体積層体の全面を覆う前記第1膜を形成した後、前記第1膜の一部を除去して前記第1窒化物半導体層の前記一部を露出させる工程と、
前記第1膜および前記第1窒化物半導体層の前記一部を覆う前記第2膜を形成した後、前記第2膜の一部を除去して前記第1窒化物半導体層の前記一部を露出させる工程と、
を有する請求項1または2に記載の発光素子の製造方法。 - 前記第1窒化物半導体層と、前記第1活性層と、前記第2窒化物半導体層とを有する第1積層部の発光ピーク波長は、前記第1窒化物半導体層と、前記第1窒化物半導体層と前記第3窒化物半導体層との間に形成された第2活性層と、前記第3窒化物半導体層とを有する第2積層部の発光ピーク波長とは異なる請求項1~3のいずれか1つに記載の発光素子の製造方法。
- 前記第1膜は、シリコン酸化膜であり、
前記第2膜は、タングステン膜である請求項1~4のいずれか1つに記載の発光素子の製造方法。
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JP2019030156A JP7182057B2 (ja) | 2019-02-22 | 2019-02-22 | 発光素子の製造方法 |
US16/797,166 US11063084B2 (en) | 2019-02-22 | 2020-02-21 | Method for manufacturing light-emitting element |
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JP7182057B2 true JP7182057B2 (ja) | 2022-12-02 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000214339A (ja) | 1999-01-22 | 2000-08-04 | Sharp Corp | 光集積素子及びその製造方法 |
JP2001102689A (ja) | 1999-09-29 | 2001-04-13 | Sanyo Electric Co Ltd | 半導体素子の製造方法 |
JP2001210913A (ja) | 1999-11-17 | 2001-08-03 | Nichia Chem Ind Ltd | レーザ素子の製造方法 |
JP2001342100A (ja) | 2000-03-29 | 2001-12-11 | Toshiba Corp | エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法 |
JP2002009004A (ja) | 1999-11-15 | 2002-01-11 | Matsushita Electric Ind Co Ltd | 窒化物半導体の製造方法、窒化物半導体素子の製造方法、窒化物半導体素子、半導体発光素子及びその製造方法 |
JP2002185044A (ja) | 2001-11-27 | 2002-06-28 | Nichia Chem Ind Ltd | 窒化物半導体多色発光素子 |
JP2004119964A (ja) | 2002-09-06 | 2004-04-15 | Sony Corp | 半導体発光素子の製造方法、半導体発光素子、集積型半導体発光装置の製造方法、集積型半導体発光装置、画像表示装置の製造方法、画像表示装置、照明装置の製造方法および照明装置 |
US20080283869A1 (en) | 2007-05-15 | 2008-11-20 | Min Soo Noh | Method for manufacturing semiconductor light emitting device |
JP2009054800A (ja) | 2007-08-27 | 2009-03-12 | Toyota Central R&D Labs Inc | Iii族窒化物半導体の選択成長方法 |
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WO2001031671A1 (en) * | 1999-10-26 | 2001-05-03 | Stellar Display Corporation | Method of fabricating a field emission device with a lateral thin-film edge emitter |
KR100533910B1 (ko) | 2004-01-15 | 2005-12-07 | 엘지전자 주식회사 | 고품질 질화물 반도체 박막 성장 방법 |
JP2006156802A (ja) | 2004-11-30 | 2006-06-15 | Showa Denko Kk | Iii族窒化物半導体素子 |
JP2006179546A (ja) | 2004-12-21 | 2006-07-06 | Matsushita Electric Ind Co Ltd | 半導体電子装置 |
JP2009070893A (ja) | 2007-09-11 | 2009-04-02 | Rohm Co Ltd | 発光装置及びその製造方法 |
JP5495257B2 (ja) * | 2009-10-09 | 2014-05-21 | シャープ株式会社 | Iii族窒化物系電界効果トランジスタおよびその製造方法 |
KR102462658B1 (ko) * | 2016-03-18 | 2022-11-03 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 표시장치 |
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- 2019-02-22 JP JP2019030156A patent/JP7182057B2/ja active Active
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000214339A (ja) | 1999-01-22 | 2000-08-04 | Sharp Corp | 光集積素子及びその製造方法 |
JP2001102689A (ja) | 1999-09-29 | 2001-04-13 | Sanyo Electric Co Ltd | 半導体素子の製造方法 |
JP2002009004A (ja) | 1999-11-15 | 2002-01-11 | Matsushita Electric Ind Co Ltd | 窒化物半導体の製造方法、窒化物半導体素子の製造方法、窒化物半導体素子、半導体発光素子及びその製造方法 |
JP2001210913A (ja) | 1999-11-17 | 2001-08-03 | Nichia Chem Ind Ltd | レーザ素子の製造方法 |
JP2001342100A (ja) | 2000-03-29 | 2001-12-11 | Toshiba Corp | エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法 |
JP2002185044A (ja) | 2001-11-27 | 2002-06-28 | Nichia Chem Ind Ltd | 窒化物半導体多色発光素子 |
JP2004119964A (ja) | 2002-09-06 | 2004-04-15 | Sony Corp | 半導体発光素子の製造方法、半導体発光素子、集積型半導体発光装置の製造方法、集積型半導体発光装置、画像表示装置の製造方法、画像表示装置、照明装置の製造方法および照明装置 |
US20080283869A1 (en) | 2007-05-15 | 2008-11-20 | Min Soo Noh | Method for manufacturing semiconductor light emitting device |
JP2009054800A (ja) | 2007-08-27 | 2009-03-12 | Toyota Central R&D Labs Inc | Iii族窒化物半導体の選択成長方法 |
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US11063084B2 (en) | 2021-07-13 |
JP2020136554A (ja) | 2020-08-31 |
US20200273905A1 (en) | 2020-08-27 |
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