JP7181337B2 - 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド - Google Patents
流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド Download PDFInfo
- Publication number
- JP7181337B2 JP7181337B2 JP2021071508A JP2021071508A JP7181337B2 JP 7181337 B2 JP7181337 B2 JP 7181337B2 JP 2021071508 A JP2021071508 A JP 2021071508A JP 2021071508 A JP2021071508 A JP 2021071508A JP 7181337 B2 JP7181337 B2 JP 7181337B2
- Authority
- JP
- Japan
- Prior art keywords
- faceplate
- showerhead
- holes
- diameter
- baffle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 claims description 144
- 230000008569 process Effects 0.000 claims description 137
- 238000012545 processing Methods 0.000 claims description 74
- 239000004065 semiconductor Substances 0.000 claims description 72
- 238000004891 communication Methods 0.000 claims description 8
- 239000012530 fluid Substances 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 5
- 230000002441 reversible effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 149
- 239000000758 substrate Substances 0.000 description 147
- 239000010408 film Substances 0.000 description 108
- 238000000231 atomic layer deposition Methods 0.000 description 52
- 238000010926 purge Methods 0.000 description 38
- 239000000376 reactant Substances 0.000 description 35
- 238000006243 chemical reaction Methods 0.000 description 23
- 238000000151 deposition Methods 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 18
- 230000008021 deposition Effects 0.000 description 17
- 238000009826 distribution Methods 0.000 description 14
- 239000002243 precursor Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000002829 reductive effect Effects 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 230000002411 adverse Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000036961 partial effect Effects 0.000 description 8
- 230000007704 transition Effects 0.000 description 8
- 239000012071 phase Substances 0.000 description 6
- 241000894007 species Species 0.000 description 6
- 239000013598 vector Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000003550 marker Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000011112 process operation Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- -1 electrons Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002000 scavenging effect Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 241000473391 Archosargus rhomboidalis Species 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 210000005239 tubule Anatomy 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Formation Of Insulating Films (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
半導体処理で利用される様々な堆積技術の中でも、1つの特定の堆積技術は、原子層堆積(ALD)を含み得る。熱的に活性化される気相反応が膜の堆積のために利用される化学気相堆積(CVD)プロセスとは対照的に、ALDプロセスは、表面媒介性堆積反応を利用して膜を一層ずつ堆積する。例示的ALDプロセスでは、一群の表面活性部位を含む基板表面が、第1の膜前駆体(P1)の気相分布に暴露される。P1分子の一部は、P1の化学吸着された種および物理吸着された分子を含む凝集相を基板表面上に形成し得る。次いで、反応室は、化学吸着された種だけが残るように、気相のおよび物理吸着されたP1を除去するために排気される。次いで、第2の膜前駆体(P2)が反応室に導入されて、P2分子の一部が基板表面に吸着される。反応室は、ここでは未結合のP2を除去するために再び排気され得る。その後、基板に供給されたエネルギーが、吸着されたP1およびP2の分子の間の表面反応を活性化し、膜層を形成する。最終的に、反応室は、反応副生成物ならびに場合によっては未反応のP1およびP2を除去するために排気されて、ALDサイクルが終了する。さらなるALDサイクルが、膜厚を厚くするために含まれてもよい。
シャワーヘッドは、空間的に非均一な流れのペナルティを著しく被ることなく縮小容積を有することが可能である。かかる低容積シャワーヘッドは、ステム区域とプレナム区域の間の領域に配置された多孔バッフルを備えることが可能であり、これは、発明の名称を「LOW VOLUME SHOWERHEAD WITH POROUS BAFFLE」とする2015年3月25日出願のChandrasekharanらの米国特許出願第14/668,511号に記載されている。この出願の全体が、全体としておよびあらゆる目的のために参照により本明細書に組み込まれる。
本開示は、小径貫通穴を有するフェースプレートを有するシャワーヘッドに関する。先に論じたように、多孔バッフルを有する低容積シャワーヘッドは、約0.04インチ以上の直径を有する貫通穴を有するフェースプレートを備えることが可能である。しかし、低容積シャワーヘッドは、約0.04インチ以下の直径を有する貫通穴を有するフェースプレートを備えることが可能である。貫通穴の直径が約0.04インチ未満である場合には、このより小径の貫通穴は、より空間的に均一な流れを達成することが可能であるだけでなく、貫通穴内部における局所的電界集中を軽減させることも可能である。これは、標準RF電力にて堆積される膜の非均一性を改善させるだけなく、より高いRF電力でも堆積される膜の非均一性および他の膜特性を改善させ得る。
図10に戻ると、典型的なフェースプレート1004は、内方貫通穴1032および外方貫通穴1034を備える。外方貫通穴1034は、境界マーカ1036の外部に配置されるが、内方貫通穴1032は、フェースプレート1004の第2の側部において境界マーカ1036内に配置され、境界マーカ1036は、フェースプレート1004のエッジの近傍にリングを画定する。境界マーカ1036の径方向経路に沿った外方貫通穴1034の空間分布は、不均一である。換言すれば、外方貫通穴1034同士の間の間隔は、フェースプレート1004の外周領域に沿って不均一となる。六角形状パターンまたは三角形状パターンにしたがってフェースプレート貫通穴1032、1034を形成した場合には、六角形状パターンまたは三角形状パターンにより、外方貫通穴1034の位置は、フェースプレート1004の外周領域に沿って相互に不均一に分布し得る。これは、フェースプレート1004の最外エッジ付近のフェースプレート貫通穴分布に対して方位角的不連続性を生じさせ得る。かかる不連続性は、処理されることとなる基板のエッジにおける流れ均一性の問題を生じさせる恐れがある。いくつかの実装形態では、基板のエッジにおける流れ均一性の問題は、基板のエッジにおける不均一な流量に関する問題と、基板のエッジにおける不均一な流れ方向に関する問題とを含み得る。
Claims (20)
- 半導体処理装置において使用するためのシャワーヘッドであって、
内側直径と外側直径とを有するステムと、
複数のフェースプレート貫通穴を備えるフェースプレートと、前記複数のフェースプレート貫通穴は前記フェースプレートの第1の側から第2の側まで延在し、前記複数のフェースプレート貫通穴の少なくともいくつかは0.04インチ(1.016mm)以下の直径を有し、
前記フェースプレートに対向するバックプレートであって、前記フェースプレートとの間にプレナム区画と画定するバックプレートと、前記ステムは前記バックプレートの中央領域に接続されており、前記バックプレートの少なくとも一部は径方向外側に向かって前記プレナム区画の厚みが減少するように傾斜しており、
前記プレナム区画に配置され、前記ステムから流れてきた処理ガスを前記プレナム区画内に分配するバッフルと
を備える、シャワーヘッド。 - 請求項1に記載のシャワーヘッドであって、
前記複数のフェースプレート貫通穴の少なくともいくつかは、前記フェースプレートの主面全体にわたって六角形状配置に空間的に分布されている、シャワーヘッド。 - 請求項1に記載のシャワーヘッドであって、
前記複数のフェースプレート貫通穴の少なくともいくつかは、前記フェースプレートの主面全体にわたって三角形状配置に空間的に分布されたている、シャワーヘッド。 - 請求項1に記載のシャワーヘッドであって、
前記バッフルは、前記ステムの内側直径よりも大きな直径を有する、シャワーヘッド。 - 請求項1に記載のシャワーヘッドであって、
前記バッフルは、複数のバッフル貫通穴を備える、シャワーヘッド。 - 請求項5に記載のシャワーヘッドであって、
前記バッフルの多孔率は、5%~25%である、シャワーヘッド。 - 請求項1に記載のシャワーヘッドであって、
前記バッフルは、前記ステムの下方に中心を置く、シャワーヘッド。 - 請求項1に記載のシャワーヘッドであって、
前記フェースプレートの直径は、前記バッフルの直径の4倍よりも大きい、シャワーヘッド。 - 請求項1に記載のシャワーヘッドであって、
前記複数のフェースプレート貫通穴の前記少なくともいくつかの前記直径は、0.01インチ(0.254mm)~0.03インチである、シャワーヘッド。 - 請求項1に記載のシャワーヘッドであって、
前記複数のフェースプレート貫通穴の前記少なくともいくつかの前記直径は、0.04インチに等しい、シャワーヘッド。 - 請求項1から10のいずれか一項に記載のシャワーヘッドであって、
フェースプレート貫通穴の個数は、300個~6000個である、シャワーヘッド。 - 請求項1から10のいずれか一項に記載のシャワーヘッドであって、
前記複数のフェースプレート貫通穴の前記直径は、前記フェースプレートから出るガス流の空間的均一性を上昇させるように構成されている、シャワーヘッド。 - 請求項1から10のいずれか一項に記載のシャワーヘッドであって、
前記複数のフェースプレート貫通穴の前記直径は、前記フェースプレートの外部から前記プレナム区画内に進むプラズマの逆流を軽減するように構成されている、シャワーヘッド。 - 請求項1から10のいずれか一項に記載の前記シャワーヘッドを備える半導体処理ステーション。
- 半導体処理装置において使用するためのシャワーヘッドであって、
内側直径と外側直径とを有するステムと、
複数のフェースプレート貫通穴を備えるフェースプレートと、前記複数のフェースプレート貫通穴は前記フェースプレートの第1の側から第2の側まで延在し、前記複数のフェースプレート貫通穴は複数の中央貫通穴および前記複数の中央貫通穴の周りの複数のエッジ貫通穴を含み、前記複数のエッジ貫通穴は、前記フェースプレートの前記第1の側から前記第2の側にある角度で傾斜されており、
前記フェースプレートに対向するバックプレートであって、前記フェースプレートとの間にプレナム区画を画定するバックプレートと、前記ステムは、前記バックプレートの中央領域に接続され、前記プレナム区画と流体連通しており、
前記プレナム区画に配置され、前記ステムから流れてきた処理ガスを前記プレナム区画内に分配するバッフルと
を備える、シャワーヘッド。 - 請求項15に記載のシャワーヘッドであって、
前記複数のエッジ貫通穴は、300mm超の直径を有する貫通穴リングに沿って前記フェースプレートの前記第2の側において周方向に配置される、シャワーヘッド。 - 請求項15に記載のシャワーヘッドであって、
前記複数のエッジ貫通穴は、前記フェースプレートの前記第1の側から前記第2の側にかけて90度未満の角度で傾斜される、シャワーヘッド。 - 請求項17に記載のシャワーヘッドであって、
前記複数のエッジ貫通穴は、前記フェースプレートの前記第1の側から第2の側にかけて75度未満の角度で傾斜される、シャワーヘッド。 - 請求項15に記載のシャワーヘッドであって、
前記複数のエッジ貫通穴は、第1のリングおよび前記第1のリングを囲む第2のリングに沿って前記フェースプレートの前記第2の側において周方向に配置される、シャワーヘッド。 - 請求項19に記載のシャワーヘッドであって、
前記第1のリングは、300mm超の直径を有し、前記第2のリングは、310mm超の直径を有する、シャワーヘッド。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022183800A JP7313528B2 (ja) | 2015-05-22 | 2022-11-17 | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562165761P | 2015-05-22 | 2015-05-22 | |
US62/165,761 | 2015-05-22 | ||
US14/850,816 US10378107B2 (en) | 2015-05-22 | 2015-09-10 | Low volume showerhead with faceplate holes for improved flow uniformity |
US14/850,816 | 2015-09-10 | ||
JP2016098409A JP6912164B2 (ja) | 2015-05-22 | 2016-05-17 | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016098409A Division JP6912164B2 (ja) | 2015-05-22 | 2016-05-17 | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022183800A Division JP7313528B2 (ja) | 2015-05-22 | 2022-11-17 | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2021106293A JP2021106293A (ja) | 2021-07-26 |
JP2021106293A5 JP2021106293A5 (ja) | 2022-09-30 |
JP7181337B2 true JP7181337B2 (ja) | 2022-11-30 |
Family
ID=57324324
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016098409A Active JP6912164B2 (ja) | 2015-05-22 | 2016-05-17 | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド |
JP2021071508A Active JP7181337B2 (ja) | 2015-05-22 | 2021-04-21 | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド |
JP2022183800A Active JP7313528B2 (ja) | 2015-05-22 | 2022-11-17 | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016098409A Active JP6912164B2 (ja) | 2015-05-22 | 2016-05-17 | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022183800A Active JP7313528B2 (ja) | 2015-05-22 | 2022-11-17 | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド |
Country Status (6)
Country | Link |
---|---|
US (1) | US10378107B2 (ja) |
JP (3) | JP6912164B2 (ja) |
KR (3) | KR102357417B1 (ja) |
CN (1) | CN106167895B (ja) |
SG (2) | SG10202102836YA (ja) |
TW (1) | TWI713525B (ja) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
US9997357B2 (en) | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
JP5697389B2 (ja) * | 2010-09-27 | 2015-04-08 | 東京エレクトロン株式会社 | プラズマエッチング用の電極板及びプラズマエッチング処理装置 |
US9441296B2 (en) | 2011-03-04 | 2016-09-13 | Novellus Systems, Inc. | Hybrid ceramic showerhead |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
JP6538300B2 (ja) | 2012-11-08 | 2019-07-03 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 感受性基材上にフィルムを蒸着するための方法 |
US10741365B2 (en) * | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
US9797042B2 (en) | 2014-05-15 | 2017-10-24 | Lam Research Corporation | Single ALD cycle thickness control in multi-station substrate deposition systems |
US9793096B2 (en) * | 2014-09-12 | 2017-10-17 | Lam Research Corporation | Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity |
US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
US10378107B2 (en) * | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10483092B2 (en) * | 2016-04-13 | 2019-11-19 | Lam Research Corporation | Baffle plate and showerhead assemblies and corresponding manufacturing method |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
US10062563B2 (en) * | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
WO2018106627A1 (en) * | 2016-12-08 | 2018-06-14 | Applied Materials, Inc. | Temporal atomic layer deposition processing chamber |
US10083820B2 (en) * | 2016-11-14 | 2018-09-25 | Tokyo Electron Limited | Dual-frequency surface wave plasma source |
US10604841B2 (en) | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
CN107516625A (zh) * | 2017-07-13 | 2017-12-26 | 江苏鲁汶仪器有限公司 | 一种等离子体刻蚀***的喷淋头 |
US10851457B2 (en) | 2017-08-31 | 2020-12-01 | Lam Research Corporation | PECVD deposition system for deposition on selective side of the substrate |
US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
US10697059B2 (en) | 2017-09-15 | 2020-06-30 | Lam Research Corporation | Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching |
KR102538177B1 (ko) | 2017-11-16 | 2023-05-31 | 삼성전자주식회사 | 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치 |
KR102404061B1 (ko) | 2017-11-16 | 2022-05-31 | 삼성전자주식회사 | 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치 |
US11015247B2 (en) | 2017-12-08 | 2021-05-25 | Lam Research Corporation | Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US11149350B2 (en) * | 2018-01-10 | 2021-10-19 | Asm Ip Holding B.V. | Shower plate structure for supplying carrier and dry gas |
KR102474847B1 (ko) * | 2018-04-25 | 2022-12-06 | 삼성전자주식회사 | 가스 인젝터 및 웨이퍼 처리 장치 |
US11834743B2 (en) * | 2018-09-14 | 2023-12-05 | Applied Materials, Inc. | Segmented showerhead for uniform delivery of multiple precursors |
US10984987B2 (en) * | 2018-10-10 | 2021-04-20 | Lam Research Corporation | Showerhead faceplate having flow apertures configured for hollow cathode discharge suppression |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) * | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
JP2022523541A (ja) * | 2019-03-08 | 2022-04-25 | アプライド マテリアルズ インコーポレイテッド | 処理チャンバ用の多孔性シャワーヘッド |
JP7058239B2 (ja) * | 2019-03-14 | 2022-04-21 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
SG11202111962QA (en) | 2019-05-01 | 2021-11-29 | Lam Res Corp | Modulated atomic layer deposition |
CN110170433A (zh) * | 2019-05-28 | 2019-08-27 | 昆山国显光电有限公司 | 一种真空干燥装置 |
DE102019119019A1 (de) * | 2019-07-12 | 2021-01-14 | Aixtron Se | Gaseinlassorgan für einen CVD-Reaktor |
CN114258436A (zh) | 2019-08-16 | 2022-03-29 | 朗姆研究公司 | 空间可调沉积以在晶片差异弯曲中进行补偿 |
US11859284B2 (en) * | 2019-08-23 | 2024-01-02 | Taiwan Semiconductor Manufacturing Company Ltd. | Shower head structure and plasma processing apparatus using the same |
JP2022546404A (ja) * | 2019-08-28 | 2022-11-04 | ラム リサーチ コーポレーション | 金属の堆積 |
JP7313269B2 (ja) * | 2019-12-23 | 2023-07-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20230044064A1 (en) * | 2020-01-06 | 2023-02-09 | Lam Research Corporation | Showerhead with faceplate having internal contours |
CN111403256B (zh) * | 2020-03-24 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 半导体工艺装置 |
US11373845B2 (en) * | 2020-06-05 | 2022-06-28 | Applied Materials, Inc. | Methods and apparatus for symmetrical hollow cathode electrode and discharge mode for remote plasma processes |
CN113802113A (zh) * | 2020-06-13 | 2021-12-17 | 拓荆科技股份有限公司 | 一种改善反应过程中反射功率稳定性的等离子体发生装置 |
KR20230024401A (ko) * | 2020-06-15 | 2023-02-20 | 램 리써치 코포레이션 | 반도체 프로세싱 툴들을 위한 기울어진 가스 분배 통로들 (angled gas distribution passages) 을 갖는 샤워헤드 대면 플레이트들 |
TWI727839B (zh) * | 2020-06-24 | 2021-05-11 | 天虹科技股份有限公司 | 半導體原子層沉積裝置之噴灑頭結構 |
US20220122811A1 (en) * | 2020-10-16 | 2022-04-21 | Applied Materials, Inc. | Electric arc mitigating faceplate |
CN112323043A (zh) * | 2020-10-30 | 2021-02-05 | 泉芯集成电路制造(济南)有限公司 | 一种气体分配器以及原子层沉积反应设备 |
US20220134359A1 (en) * | 2020-10-30 | 2022-05-05 | Kabushiki Kaisha Toshiba | Rectifying plate, fluid-introducing apparatus, and film-forming apparatus |
CN114045471A (zh) * | 2021-11-23 | 2022-02-15 | 中国电子科技集团公司第五十五研究所 | 等离子体增强型化学气相淀积设备薄膜均匀性改善装置 |
CN114098371B (zh) * | 2021-12-02 | 2023-02-28 | 郑州航空工业管理学院 | 一种智能化控制的工业设计展示装置 |
CN114457321B (zh) * | 2022-01-21 | 2023-03-28 | 深圳市纳设智能装备有限公司 | 一种进气装置及cvd设备 |
WO2023177570A1 (en) * | 2022-03-15 | 2023-09-21 | Lam Research Corporation | Showerhead for substrate processing systems |
CN218146933U (zh) * | 2022-03-25 | 2022-12-27 | 朗姆研究公司 | 衬底处理***、用于衬底处理***的喷头和喷头组件 |
WO2024091408A1 (en) * | 2022-10-25 | 2024-05-02 | Lam Research Corporation | Cupped baffle plates for showerheads of substrate processing systems |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000183029A (ja) | 1998-12-17 | 2000-06-30 | Sony Corp | ドライアッシング装置 |
JP2002503765A (ja) | 1998-02-13 | 2002-02-05 | アプライド マテリアルズ インコーポレイテッド | 化学気相堆積用リアクタ |
JP2002069650A (ja) | 2000-08-31 | 2002-03-08 | Applied Materials Inc | 気相堆積方法及び装置並びに半導体装置の製造方法及び装置 |
JP2004115837A (ja) | 2002-09-24 | 2004-04-15 | Hitachi Cable Ltd | Cvd膜の製造方法及びその製造装置 |
JP2004356587A (ja) | 2003-05-30 | 2004-12-16 | Toshio Goto | プラズマ処理装置 |
JP3147392U (ja) | 2008-10-15 | 2008-12-25 | ノベルス・システムズ・インコーポレーテッド | 温度制御型シャワーヘッド |
JP2010153680A (ja) | 2008-12-26 | 2010-07-08 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2016219803A (ja) | 2015-05-22 | 2016-12-22 | ラム リサーチ コーポレーションLam Research Corporation | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド |
Family Cites Families (219)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE628052A (ja) | 1962-03-15 | |||
GB2112715B (en) | 1981-09-30 | 1985-07-31 | Shinshu Seiki Kk | Ink jet recording apparatus |
JPS6187319A (ja) * | 1984-10-05 | 1986-05-02 | Hitachi Ltd | プラズマを用いた化学気相成膜装置 |
JPH067542B2 (ja) | 1984-11-22 | 1994-01-26 | 株式会社日立製作所 | 製造装置 |
US4960488A (en) | 1986-12-19 | 1990-10-02 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
US4993485A (en) | 1989-09-18 | 1991-02-19 | Gorman Jeremy W | Easily disassembled heat exchanger of high efficiency |
US5186756A (en) | 1990-01-29 | 1993-02-16 | At&T Bell Laboratories | MOCVD method and apparatus |
US5106453A (en) | 1990-01-29 | 1992-04-21 | At&T Bell Laboratories | MOCVD method and apparatus |
US5212116A (en) | 1990-06-18 | 1993-05-18 | At&T Bell Laboratories | Method for forming planarized films by preferential etching of the center of a wafer |
EP0462730A1 (en) | 1990-06-18 | 1991-12-27 | AT&T Corp. | Method and apparatus for forming planar integrated circuit layers |
JP3147392B2 (ja) | 1991-03-04 | 2001-03-19 | 宇部サイコン株式会社 | 熱可塑性樹脂組成物 |
US5268034A (en) | 1991-06-25 | 1993-12-07 | Lsi Logic Corporation | Fluid dispersion head for CVD appratus |
US5286519A (en) | 1991-06-25 | 1994-02-15 | Lsi Logic Corporation | Fluid dispersion head |
FR2682047B1 (fr) | 1991-10-07 | 1993-11-12 | Commissariat A Energie Atomique | Reacteur de traitement chimique en phase gazeuse. |
US5446824A (en) | 1991-10-11 | 1995-08-29 | Texas Instruments | Lamp-heated chuck for uniform wafer processing |
US5376213A (en) | 1992-07-28 | 1994-12-27 | Tokyo Electron Limited | Plasma processing apparatus |
US5453124A (en) | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
JP3174438B2 (ja) | 1993-08-03 | 2001-06-11 | 松下電器産業株式会社 | プラズマcvd方法 |
US5452396A (en) | 1994-02-07 | 1995-09-19 | Midwest Research Institute | Optical processing furnace with quartz muffle and diffuser plate |
JPH07240404A (ja) * | 1994-03-02 | 1995-09-12 | Fujitsu Ltd | プラズマ処理装置 |
US5589002A (en) | 1994-03-24 | 1996-12-31 | Applied Materials, Inc. | Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing |
US5581874A (en) | 1994-03-28 | 1996-12-10 | Tokyo Electron Limited | Method of forming a bonding portion |
WO1995026427A1 (de) | 1994-03-29 | 1995-10-05 | Schott Glaswerke | Pcvd-verfahren und vorrichtung zur beschichtung von gewölbten substraten |
US5468298A (en) | 1994-04-13 | 1995-11-21 | Applied Materials, Inc. | Bottom purge manifold for CVD tungsten process |
US5643394A (en) | 1994-09-16 | 1997-07-01 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
DE69518710T2 (de) * | 1994-09-27 | 2001-05-23 | Applied Materials Inc | Verfahren zum Behandeln eines Substrats in einer Vakuumbehandlungskammer |
TW331652B (en) | 1995-06-16 | 1998-05-11 | Ebara Corp | Thin film vapor deposition apparatus |
KR100319468B1 (ko) * | 1995-06-30 | 2002-04-22 | 히가시 데쓰로 | 플라즈마 처리 방법 |
JPH0945624A (ja) | 1995-07-27 | 1997-02-14 | Tokyo Electron Ltd | 枚葉式の熱処理装置 |
JP2879887B2 (ja) * | 1995-08-24 | 1999-04-05 | 東京エレクトロン株式会社 | プラズマ処理方法 |
US5670218A (en) | 1995-10-04 | 1997-09-23 | Hyundai Electronics Industries Co., Ltd. | Method for forming ferroelectric thin film and apparatus therefor |
DE29517100U1 (de) | 1995-10-17 | 1997-02-13 | Zimmer, Johannes, Klagenfurt | Strömungsteilungs- und -umformungskörper |
US6054013A (en) * | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
US5653479A (en) | 1996-02-02 | 1997-08-05 | Vlsi Technology, Inc. | Vacuum seal for a ball junction |
US5741363A (en) | 1996-03-22 | 1998-04-21 | Advanced Technology Materials, Inc. | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition |
US5614026A (en) | 1996-03-29 | 1997-03-25 | Lam Research Corporation | Showerhead for uniform distribution of process gas |
US5948704A (en) | 1996-06-05 | 1999-09-07 | Lam Research Corporation | High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
US5996528A (en) | 1996-07-02 | 1999-12-07 | Novellus Systems, Inc. | Method and apparatus for flowing gases into a manifold at high potential |
US5834068A (en) | 1996-07-12 | 1998-11-10 | Applied Materials, Inc. | Wafer surface temperature control for deposition of thin films |
JP3310171B2 (ja) | 1996-07-17 | 2002-07-29 | 松下電器産業株式会社 | プラズマ処理装置 |
JPH1050678A (ja) * | 1996-08-02 | 1998-02-20 | Ibiden Co Ltd | プラズマエッチング用電極板 |
US5806980A (en) | 1996-09-11 | 1998-09-15 | Novellus Systems, Inc. | Methods and apparatus for measuring temperatures at high potential |
KR100492258B1 (ko) | 1996-10-11 | 2005-09-02 | 가부시키가이샤 에바라 세이사꾸쇼 | 반응가스분출헤드 |
US5882411A (en) | 1996-10-21 | 1999-03-16 | Applied Materials, Inc. | Faceplate thermal choke in a CVD plasma reactor |
EP0854210B1 (en) * | 1996-12-19 | 2002-03-27 | Toshiba Ceramics Co., Ltd. | Vapor deposition apparatus for forming thin film |
US6616767B2 (en) | 1997-02-12 | 2003-09-09 | Applied Materials, Inc. | High temperature ceramic heater assembly with RF capability |
JP3341619B2 (ja) | 1997-03-04 | 2002-11-05 | 東京エレクトロン株式会社 | 成膜装置 |
US6063441A (en) * | 1997-12-02 | 2000-05-16 | Applied Materials, Inc. | Processing chamber and method for confining plasma |
US6112697A (en) | 1998-02-19 | 2000-09-05 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods |
US6289842B1 (en) | 1998-06-22 | 2001-09-18 | Structured Materials Industries Inc. | Plasma enhanced chemical vapor deposition system |
US6190732B1 (en) | 1998-09-03 | 2001-02-20 | Cvc Products, Inc. | Method and system for dispensing process gas for fabricating a device on a substrate |
US6454860B2 (en) | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
US6409837B1 (en) | 1999-01-13 | 2002-06-25 | Tokyo Electron Limited | Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor |
US6499425B1 (en) | 1999-01-22 | 2002-12-31 | Micron Technology, Inc. | Quasi-remote plasma processing method and apparatus |
JP2000290777A (ja) * | 1999-04-07 | 2000-10-17 | Tokyo Electron Ltd | ガス処理装置、バッフル部材、及びガス処理方法 |
KR100302609B1 (ko) | 1999-05-10 | 2001-09-13 | 김영환 | 온도가변 가스 분사 장치 |
US6565661B1 (en) | 1999-06-04 | 2003-05-20 | Simplus Systems Corporation | High flow conductance and high thermal conductance showerhead system and method |
US6415736B1 (en) | 1999-06-30 | 2002-07-09 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6245192B1 (en) | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6205869B1 (en) | 1999-08-12 | 2001-03-27 | Sentry Equipment Corporation | Apparatus and method for sampling fluid from reactor vessel |
US6451157B1 (en) | 1999-09-23 | 2002-09-17 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6364949B1 (en) | 1999-10-19 | 2002-04-02 | Applied Materials, Inc. | 300 mm CVD chamber design for metal-organic thin film deposition |
US6537420B2 (en) | 1999-12-17 | 2003-03-25 | Texas Instruments Incorporated | Method and apparatus for restricting process fluid flow within a showerhead assembly |
ATE244780T1 (de) | 1999-12-22 | 2003-07-15 | Aixtron Ag | Cvd reaktor und prozesskammer dafür |
US20020134507A1 (en) | 1999-12-22 | 2002-09-26 | Silicon Valley Group, Thermal Systems Llc | Gas delivery metering tube |
US6477980B1 (en) | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
US6237528B1 (en) | 2000-01-24 | 2001-05-29 | M.E.C. Technology, Inc. | Showerhead electrode assembly for plasma processing |
DE10007059A1 (de) | 2000-02-16 | 2001-08-23 | Aixtron Ag | Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung |
US6444039B1 (en) | 2000-03-07 | 2002-09-03 | Simplus Systems Corporation | Three-dimensional showerhead apparatus |
US6635117B1 (en) | 2000-04-26 | 2003-10-21 | Axcelis Technologies, Inc. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
US6502530B1 (en) | 2000-04-26 | 2003-01-07 | Unaxis Balzers Aktiengesellschaft | Design of gas injection for the electrode in a capacitively coupled RF plasma reactor |
KR100406174B1 (ko) | 2000-06-15 | 2003-11-19 | 주식회사 하이닉스반도체 | 화학적 강화 화학 기상 증착 장비에 사용되는 샤워 헤드 |
JP3578398B2 (ja) | 2000-06-22 | 2004-10-20 | 古河スカイ株式会社 | 成膜用ガス分散プレート及びその製造方法 |
JP4567148B2 (ja) | 2000-06-23 | 2010-10-20 | 東京エレクトロン株式会社 | 薄膜形成装置 |
US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
US7223676B2 (en) | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
DE10043601A1 (de) | 2000-09-01 | 2002-03-14 | Aixtron Ag | Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten |
US6379056B1 (en) | 2000-09-12 | 2002-04-30 | Tokyo Electron Limited | Substrate processing apparatus |
US20040002346A1 (en) * | 2000-12-14 | 2004-01-01 | John Santhoff | Ultra-wideband geographic location system and method |
CN1328766C (zh) | 2001-01-22 | 2007-07-25 | 东京毅力科创株式会社 | 处理装置和处理方法 |
KR100749377B1 (ko) | 2001-02-09 | 2007-08-14 | 동경 엘렉트론 주식회사 | 성막 장치 |
US20020144783A1 (en) | 2001-04-05 | 2002-10-10 | Applied Materials, Inc. | Apparatus and method for accelerating process stability of high temperature vacuum processes after chamber cleaning |
US6761796B2 (en) | 2001-04-06 | 2004-07-13 | Axcelis Technologies, Inc. | Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing |
JP5079949B2 (ja) | 2001-04-06 | 2012-11-21 | 東京エレクトロン株式会社 | 処理装置および処理方法 |
JP4549022B2 (ja) | 2001-04-30 | 2010-09-22 | ラム リサーチ コーポレイション | ワーク支持体の表面を横切る空間温度分布を制御する方法および装置 |
KR100400044B1 (ko) | 2001-07-16 | 2003-09-29 | 삼성전자주식회사 | 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드 |
EP1421606A4 (en) | 2001-08-06 | 2008-03-05 | Genitech Co Ltd | PLASMA ACTIVE ATOMIC LAYER (PEALD) DEPOSITION APPARATUS AND METHOD OF FORMING THIN FILM USING SAID APPARATUS |
US20030047282A1 (en) | 2001-09-10 | 2003-03-13 | Yasumi Sago | Surface processing apparatus |
US6986324B2 (en) | 2001-10-19 | 2006-01-17 | Hydropac/Lab Products, Inc. | Fluid delivery valve system and method |
JP4121269B2 (ja) | 2001-11-27 | 2008-07-23 | 日本エー・エス・エム株式会社 | セルフクリーニングを実行するプラズマcvd装置及び方法 |
US6773507B2 (en) | 2001-12-06 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for fast-cycle atomic layer deposition |
US6793733B2 (en) | 2002-01-25 | 2004-09-21 | Applied Materials Inc. | Gas distribution showerhead |
EP1485513A2 (en) | 2002-03-08 | 2004-12-15 | Sundew Technologies, LLC | Ald method and apparatus |
JP2003271218A (ja) | 2002-03-15 | 2003-09-26 | Toshiba Corp | 半導体製造装置、半導体製造システム及び基板処理方法 |
US6883733B1 (en) | 2002-03-28 | 2005-04-26 | Novellus Systems, Inc. | Tapered post, showerhead design to improve mixing on dual plenum showerheads |
US6921556B2 (en) | 2002-04-12 | 2005-07-26 | Asm Japan K.K. | Method of film deposition using single-wafer-processing type CVD |
US6936551B2 (en) | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
AU2003240679A1 (en) * | 2002-05-21 | 2003-12-02 | Sofitech N.V. | Hydraulic fracturing method |
US6821347B2 (en) | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
JP4186536B2 (ja) | 2002-07-18 | 2008-11-26 | 松下電器産業株式会社 | プラズマ処理装置 |
US6921702B2 (en) * | 2002-07-30 | 2005-07-26 | Micron Technology Inc. | Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics |
US7543547B1 (en) | 2002-07-31 | 2009-06-09 | Lam Research Corporation | Electrode assembly for plasma processing apparatus |
US20040050326A1 (en) | 2002-09-12 | 2004-03-18 | Thilderkvist Karin Anna Lena | Apparatus and method for automatically controlling gas flow in a substrate processing system |
US20040050325A1 (en) | 2002-09-12 | 2004-03-18 | Samoilov Arkadii V. | Apparatus and method for delivering process gas to a substrate processing system |
US6716287B1 (en) | 2002-10-18 | 2004-04-06 | Applied Materials Inc. | Processing chamber with flow-restricting ring |
KR100490049B1 (ko) | 2003-04-14 | 2005-05-17 | 삼성전자주식회사 | 일체형 디퓨저 프레임을 가지는 cvd 장치 |
US7296534B2 (en) | 2003-04-30 | 2007-11-20 | Tokyo Electron Limited | Hybrid ball-lock attachment apparatus |
JP4493932B2 (ja) | 2003-05-13 | 2010-06-30 | 東京エレクトロン株式会社 | 上部電極及びプラズマ処理装置 |
US20040235299A1 (en) | 2003-05-22 | 2004-11-25 | Axcelis Technologies, Inc. | Plasma ashing apparatus and endpoint detection process |
US8580076B2 (en) * | 2003-05-22 | 2013-11-12 | Lam Research Corporation | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith |
WO2005054537A2 (en) | 2003-12-01 | 2005-06-16 | Structured Materials Industries, Inc. | System and method for forming multi-component films |
US6983892B2 (en) | 2004-02-05 | 2006-01-10 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
US20050230350A1 (en) | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US20050221000A1 (en) | 2004-03-31 | 2005-10-06 | Tokyo Electron Limited | Method of forming a metal layer |
US7712434B2 (en) | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
US8317968B2 (en) | 2004-04-30 | 2012-11-27 | Lam Research Corporation | Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing |
US20060005767A1 (en) | 2004-06-28 | 2006-01-12 | Applied Materials, Inc. | Chamber component having knurled surface |
US20060027169A1 (en) | 2004-08-06 | 2006-02-09 | Tokyo Electron Limited | Method and system for substrate temperature profile control |
CN102610481B (zh) | 2004-09-01 | 2016-04-13 | 朗姆研究公司 | 用于增加光阻移除率之装置及等离子体灰化方法 |
JP4633425B2 (ja) | 2004-09-17 | 2011-02-16 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
KR20060059305A (ko) | 2004-11-26 | 2006-06-01 | 삼성전자주식회사 | 반도체 공정 장비 |
KR100628888B1 (ko) | 2004-12-27 | 2006-09-26 | 삼성전자주식회사 | 샤워 헤드 온도 조절 장치 및 이를 갖는 막 형성 장치 |
KR20060107683A (ko) * | 2005-04-11 | 2006-10-16 | 삼성전자주식회사 | 화학 기상 증착 장치 |
JP4615600B2 (ja) | 2005-04-18 | 2011-01-19 | ザ プロクター アンド ギャンブル カンパニー | 増粘剤を含有する希釈布地ケア組成物及び陰イオンキャリーオーバー存在下で用いる布地ケア組成物 |
JP4628900B2 (ja) * | 2005-08-24 | 2011-02-09 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US7641762B2 (en) | 2005-09-02 | 2010-01-05 | Applied Materials, Inc. | Gas sealing skirt for suspended showerhead in process chamber |
CN101448977B (zh) | 2005-11-04 | 2010-12-15 | 应用材料股份有限公司 | 用于等离子体增强的原子层沉积的设备和工艺 |
US20070116872A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US20070116873A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
DE102005056324A1 (de) | 2005-11-25 | 2007-06-06 | Aixtron Ag | CVD-Reaktor mit auswechselbarer Prozesskammerdecke |
US8454749B2 (en) | 2005-12-19 | 2013-06-04 | Tokyo Electron Limited | Method and system for sealing a first assembly to a second assembly of a processing system |
US7679024B2 (en) | 2005-12-23 | 2010-03-16 | Lam Research Corporation | Highly efficient gas distribution arrangement for plasma tube of a plasma processing chamber |
US7740705B2 (en) | 2006-03-08 | 2010-06-22 | Tokyo Electron Limited | Exhaust apparatus configured to reduce particle contamination in a deposition system |
US7737035B1 (en) | 2006-03-31 | 2010-06-15 | Novellus Systems, Inc. | Dual seal deposition process chamber and process |
US20070246163A1 (en) | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and inductive plasma sources |
JP2008047869A (ja) | 2006-06-13 | 2008-02-28 | Hokuriku Seikei Kogyo Kk | シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
JP4193883B2 (ja) | 2006-07-05 | 2008-12-10 | 住友電気工業株式会社 | 有機金属気相成長装置 |
CN101101887A (zh) | 2006-07-06 | 2008-01-09 | 通用电气公司 | 抗腐蚀的晶片处理设备及其制造方法 |
WO2008016836A2 (en) | 2006-07-29 | 2008-02-07 | Lotus Applied Technology, Llc | Radical-enhanced atomic layer deposition system and method |
JP2008088228A (ja) | 2006-09-29 | 2008-04-17 | Fujifilm Corp | インクジェット用インク組成物、及び、これを用いた画像形成方法並びに記録物 |
US20080081114A1 (en) | 2006-10-03 | 2008-04-03 | Novellus Systems, Inc. | Apparatus and method for delivering uniform fluid flow in a chemical deposition system |
JP5073751B2 (ja) | 2006-10-10 | 2012-11-14 | エーエスエム アメリカ インコーポレイテッド | 前駆体送出システム |
US8702866B2 (en) | 2006-12-18 | 2014-04-22 | Lam Research Corporation | Showerhead electrode assembly with gas flow modification for extended electrode life |
US7993457B1 (en) | 2007-01-23 | 2011-08-09 | Novellus Systems, Inc. | Deposition sub-chamber with variable flow |
US8128750B2 (en) | 2007-03-29 | 2012-03-06 | Lam Research Corporation | Aluminum-plated components of semiconductor material processing apparatuses and methods of manufacturing the components |
US8069817B2 (en) | 2007-03-30 | 2011-12-06 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
US8568555B2 (en) | 2007-03-30 | 2013-10-29 | Tokyo Electron Limited | Method and apparatus for reducing substrate temperature variability |
US7862682B2 (en) | 2007-06-13 | 2011-01-04 | Lam Research Corporation | Showerhead electrode assemblies for plasma processing apparatuses |
JP5008478B2 (ja) | 2007-06-27 | 2012-08-22 | 東京エレクトロン株式会社 | 基板処理装置およびシャワーヘッド |
KR101206812B1 (ko) * | 2007-07-02 | 2012-11-30 | 삼성전자주식회사 | 잉크젯 프린트헤드 및 그 제조방법 |
US8021514B2 (en) | 2007-07-11 | 2011-09-20 | Applied Materials, Inc. | Remote plasma source for pre-treatment of substrates prior to deposition |
JP5422854B2 (ja) | 2007-08-31 | 2014-02-19 | 国立大学法人東北大学 | 半導体装置の製造方法 |
JP5058727B2 (ja) | 2007-09-06 | 2012-10-24 | 東京エレクトロン株式会社 | 天板構造及びこれを用いたプラズマ処理装置 |
JP5347294B2 (ja) | 2007-09-12 | 2013-11-20 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
KR101519684B1 (ko) | 2007-09-25 | 2015-05-12 | 램 리써치 코포레이션 | 플라즈마 프로세싱 장치용 샤워헤드 전극 어셈블리를 위한 온도 제어 모듈 |
JP2009088229A (ja) | 2007-09-28 | 2009-04-23 | Tokyo Electron Ltd | 成膜装置、成膜方法、記憶媒体及びガス供給装置 |
US20090095218A1 (en) | 2007-10-16 | 2009-04-16 | Novellus Systems, Inc. | Temperature controlled showerhead |
US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
SG152163A1 (en) | 2007-10-16 | 2009-05-29 | Novellus Systems Inc | Temperature controlled showerhead |
US8137467B2 (en) | 2007-10-16 | 2012-03-20 | Novellus Systems, Inc. | Temperature controlled showerhead |
KR200454281Y1 (ko) | 2007-10-16 | 2011-06-23 | 노벨러스 시스템즈, 인코포레이티드 | 온도 제어 샤워헤드 |
CN101488446B (zh) | 2008-01-14 | 2010-09-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理设备及其气体分配装置 |
USD590045S1 (en) | 2008-01-31 | 2009-04-07 | Hansgrohe Ag | Showerhead |
US20090260571A1 (en) | 2008-04-16 | 2009-10-22 | Novellus Systems, Inc. | Showerhead for chemical vapor deposition |
US8679288B2 (en) | 2008-06-09 | 2014-03-25 | Lam Research Corporation | Showerhead electrode assemblies for plasma processing apparatuses |
US8147648B2 (en) | 2008-08-15 | 2012-04-03 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
US8293013B2 (en) | 2008-12-30 | 2012-10-23 | Intermolecular, Inc. | Dual path gas distribution device |
KR20100093347A (ko) | 2009-02-16 | 2010-08-25 | 엘지전자 주식회사 | 태양전지, 태양전지의 제조방법 및 제조장치, 박막 증착방법 |
US8272346B2 (en) | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
US20100263588A1 (en) | 2009-04-15 | 2010-10-21 | Gan Zhiyin | Methods and apparatus for epitaxial growth of semiconductor materials |
KR101112974B1 (ko) | 2009-06-15 | 2012-03-02 | 주식회사 테스 | 대면적 기판 처리 장치 |
KR101659303B1 (ko) | 2009-07-15 | 2016-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | Cvd 챔버의 유동 제어 피쳐 |
US8124531B2 (en) | 2009-08-04 | 2012-02-28 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
CN102414801A (zh) | 2009-08-27 | 2012-04-11 | 应用材料公司 | 在原位腔室清洁后的处理腔室去污方法 |
JP5457109B2 (ja) | 2009-09-02 | 2014-04-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8216640B2 (en) | 2009-09-25 | 2012-07-10 | Hermes-Epitek Corporation | Method of making showerhead for semiconductor processing apparatus |
US9034142B2 (en) | 2009-12-18 | 2015-05-19 | Novellus Systems, Inc. | Temperature controlled showerhead for high temperature operations |
US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
TWI563582B (en) | 2010-06-03 | 2016-12-21 | Novellus Systems Inc | Method of improving film non-uniformity and throughput |
US8524612B2 (en) | 2010-09-23 | 2013-09-03 | Novellus Systems, Inc. | Plasma-activated deposition of conformal films |
US8911553B2 (en) | 2010-10-19 | 2014-12-16 | Applied Materials, Inc. | Quartz showerhead for nanocure UV chamber |
US8133349B1 (en) | 2010-11-03 | 2012-03-13 | Lam Research Corporation | Rapid and uniform gas switching for a plasma etch process |
US8733280B2 (en) | 2010-12-20 | 2014-05-27 | Intermolecular, Inc. | Showerhead for processing chamber |
KR101306315B1 (ko) | 2011-01-11 | 2013-09-09 | 주식회사 디엠에스 | 화학기상증착 장치 |
US9441296B2 (en) | 2011-03-04 | 2016-09-13 | Novellus Systems, Inc. | Hybrid ceramic showerhead |
US20120227665A1 (en) | 2011-03-11 | 2012-09-13 | Applied Materials, Inc. | Apparatus for monitoring and controlling substrate temperature |
US8371567B2 (en) | 2011-04-13 | 2013-02-12 | Novellus Systems, Inc. | Pedestal covers |
US9695510B2 (en) | 2011-04-21 | 2017-07-04 | Kurt J. Lesker Company | Atomic layer deposition apparatus and process |
US9245717B2 (en) | 2011-05-31 | 2016-01-26 | Lam Research Corporation | Gas distribution system for ceramic showerhead of plasma etch reactor |
US8562785B2 (en) | 2011-05-31 | 2013-10-22 | Lam Research Corporation | Gas distribution showerhead for inductively coupled plasma etch reactor |
CN102953050B (zh) | 2011-08-26 | 2014-06-18 | 杭州士兰明芯科技有限公司 | 大直径mocvd反应器的喷淋头 |
US8960235B2 (en) | 2011-10-28 | 2015-02-24 | Applied Materials, Inc. | Gas dispersion apparatus |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US20130220975A1 (en) | 2012-02-27 | 2013-08-29 | Rajinder Dhindsa | Hybrid plasma processing systems |
US9058960B2 (en) | 2012-05-09 | 2015-06-16 | Lam Research Corporation | Compression member for use in showerhead electrode assembly |
US9447499B2 (en) | 2012-06-22 | 2016-09-20 | Novellus Systems, Inc. | Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery |
US9388494B2 (en) * | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
US9121097B2 (en) | 2012-08-31 | 2015-09-01 | Novellus Systems, Inc. | Variable showerhead flow by varying internal baffle conductance |
JP6136613B2 (ja) | 2012-09-21 | 2017-05-31 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP6123208B2 (ja) | 2012-09-28 | 2017-05-10 | 東京エレクトロン株式会社 | 成膜装置 |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US8975817B2 (en) | 2012-10-17 | 2015-03-10 | Lam Research Corporation | Pressure controlled heat pipe temperature control plate |
US10316409B2 (en) | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
JP6078354B2 (ja) * | 2013-01-24 | 2017-02-08 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9314854B2 (en) | 2013-01-30 | 2016-04-19 | Lam Research Corporation | Ductile mode drilling methods for brittle components of plasma processing apparatuses |
US20140235069A1 (en) | 2013-02-15 | 2014-08-21 | Novellus Systems, Inc. | Multi-plenum showerhead with temperature control |
US9449795B2 (en) * | 2013-02-28 | 2016-09-20 | Novellus Systems, Inc. | Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor |
US9353439B2 (en) | 2013-04-05 | 2016-05-31 | Lam Research Corporation | Cascade design showerhead for transient uniformity |
US9123510B2 (en) * | 2013-06-12 | 2015-09-01 | ASM IP Holding, B.V. | Method for controlling in-plane uniformity of substrate processed by plasma-assisted process |
US20150004798A1 (en) | 2013-06-28 | 2015-01-01 | Lam Research Corporation | Chemical deposition chamber having gas seal |
US10808317B2 (en) | 2013-07-03 | 2020-10-20 | Lam Research Corporation | Deposition apparatus including an isothermal processing zone |
US9677176B2 (en) | 2013-07-03 | 2017-06-13 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
US9490149B2 (en) | 2013-07-03 | 2016-11-08 | Lam Research Corporation | Chemical deposition apparatus having conductance control |
CN103521956A (zh) | 2013-10-10 | 2014-01-22 | 光达光电设备科技(嘉兴)有限公司 | 分离式喷淋头结构 |
US10741365B2 (en) | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
US10107490B2 (en) | 2014-06-30 | 2018-10-23 | Lam Research Corporation | Configurable liquid precursor vaporizer |
US9793096B2 (en) | 2014-09-12 | 2017-10-17 | Lam Research Corporation | Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity |
US20160343595A1 (en) | 2015-05-19 | 2016-11-24 | Lam Research Corporation | Corrosion resistant gas distribution manifold with thermally controlled faceplate |
US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
-
2015
- 2015-09-10 US US14/850,816 patent/US10378107B2/en active Active
-
2016
- 2016-05-17 JP JP2016098409A patent/JP6912164B2/ja active Active
- 2016-05-19 TW TW105115413A patent/TWI713525B/zh active
- 2016-05-19 KR KR1020160061452A patent/KR102357417B1/ko active IP Right Grant
- 2016-05-20 SG SG10202102836YA patent/SG10202102836YA/en unknown
- 2016-05-20 SG SG10201604054PA patent/SG10201604054PA/en unknown
- 2016-05-23 CN CN201610345779.XA patent/CN106167895B/zh active Active
-
2021
- 2021-04-21 JP JP2021071508A patent/JP7181337B2/ja active Active
-
2022
- 2022-01-25 KR KR1020220011054A patent/KR102627544B1/ko active IP Right Grant
- 2022-11-17 JP JP2022183800A patent/JP7313528B2/ja active Active
-
2023
- 2023-11-06 KR KR1020230151477A patent/KR20230157908A/ko not_active Application Discontinuation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002503765A (ja) | 1998-02-13 | 2002-02-05 | アプライド マテリアルズ インコーポレイテッド | 化学気相堆積用リアクタ |
JP2000183029A (ja) | 1998-12-17 | 2000-06-30 | Sony Corp | ドライアッシング装置 |
JP2002069650A (ja) | 2000-08-31 | 2002-03-08 | Applied Materials Inc | 気相堆積方法及び装置並びに半導体装置の製造方法及び装置 |
JP2004115837A (ja) | 2002-09-24 | 2004-04-15 | Hitachi Cable Ltd | Cvd膜の製造方法及びその製造装置 |
JP2004356587A (ja) | 2003-05-30 | 2004-12-16 | Toshio Goto | プラズマ処理装置 |
JP3147392U (ja) | 2008-10-15 | 2008-12-25 | ノベルス・システムズ・インコーポレーテッド | 温度制御型シャワーヘッド |
JP2010153680A (ja) | 2008-12-26 | 2010-07-08 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2016219803A (ja) | 2015-05-22 | 2016-12-22 | ラム リサーチ コーポレーションLam Research Corporation | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド |
Also Published As
Publication number | Publication date |
---|---|
KR20220017968A (ko) | 2022-02-14 |
KR20230157908A (ko) | 2023-11-17 |
SG10201604054PA (en) | 2016-12-29 |
JP7313528B2 (ja) | 2023-07-24 |
US10378107B2 (en) | 2019-08-13 |
KR102627544B1 (ko) | 2024-01-19 |
TW201712144A (zh) | 2017-04-01 |
SG10202102836YA (en) | 2021-04-29 |
CN106167895A (zh) | 2016-11-30 |
US20160340782A1 (en) | 2016-11-24 |
JP6912164B2 (ja) | 2021-07-28 |
JP2021106293A (ja) | 2021-07-26 |
KR102357417B1 (ko) | 2022-01-27 |
CN106167895B (zh) | 2020-05-01 |
JP2023018006A (ja) | 2023-02-07 |
TWI713525B (zh) | 2020-12-21 |
JP2016219803A (ja) | 2016-12-22 |
KR20160137404A (ko) | 2016-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7181337B2 (ja) | 流れ均一性を改善させるためのフェースプレート穴を有する低容積シャワーヘッド | |
KR20230133257A (ko) | 다공성 베플을 갖는 저 볼륨 샤워헤드 | |
CN107768275B (zh) | 衬底处理***和处理在衬底处理***中的衬底的方法 | |
CN107699869B (zh) | 通过在整个沉积过程中改变晶片温度来抑制界面反应 | |
JP7171165B2 (ja) | 膜プロフィール調整のためのシャワーヘッドカーテンガス方法及びシャワーヘッドガスカーテンシステム | |
TW201509537A (zh) | 用於暫態非均勻性之級聯設計噴淋頭 | |
JP2018078284A (ja) | 開放空間均圧化通路および側方閉じ込めを備えた平坦な基板縁部接触部 | |
US20220110230A1 (en) | Showerhead shroud | |
CN112673456A (zh) | 使用亚稳的活化自由基物质的原子层处理工艺 | |
JP2024056884A (ja) | 半導体基板処理におけるペデスタルへの蒸着の防止 | |
JP2023509475A (ja) | 内部輪郭を有するフェースプレートを備えるシャワーヘッド | |
KR20230073144A (ko) | 트루 라디칼 (true radical) 프로세싱을 위한 리모트 플라즈마 아키텍처 | |
WO2023077002A1 (en) | Showerhead with hole sizes for radical species delivery | |
KR20220155376A (ko) | 샤워헤드 퍼지 칼라 | |
KR20210109640A (ko) | 다운스트림 플라즈마를 위한 듀얼 이온 필터를 포함하는 기판 프로세싱 시스템 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210513 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210513 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220502 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220607 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220831 |
|
A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20220921 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221018 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221117 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7181337 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |