JP7143192B2 - 表示装置および電子機器 - Google Patents
表示装置および電子機器 Download PDFInfo
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- JP7143192B2 JP7143192B2 JP2018218189A JP2018218189A JP7143192B2 JP 7143192 B2 JP7143192 B2 JP 7143192B2 JP 2018218189 A JP2018218189 A JP 2018218189A JP 2018218189 A JP2018218189 A JP 2018218189A JP 7143192 B2 JP7143192 B2 JP 7143192B2
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- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/136286—Wiring, e.g. gate line, drain line
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of El Displays (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal Display Device Control (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrophonic Musical Instruments (AREA)
Description
本実施の形態では、本発明の一態様である表示装置について、図面を参照して説明する。
本実施の形態では、液晶素子を用いた表示装置の構成例と、EL素子を用いた表示装置の構成例について説明する。なお、本実施の形態においては、実施の形態1で説明した表示装置の要素、動作および機能の説明は省略する。
本実施の形態では、上記実施の形態に示した各トランジスタに置き換えて用いることのできるトランジスタの一例について、図面を用いて説明する。
図19(A1)は、ボトムゲート型のトランジスタの一種であるチャネル保護型のトランジスタ810のチャネル長方向の断面図である。図19(A1)において、トランジスタ810は基板771上に形成されている。また、トランジスタ810は、基板771上に絶縁層772を介して電極746を有する。また、電極746上に絶縁層726を介して半導体層742を有する。電極746はゲート電極として機能できる。絶縁層726はゲート絶縁層として機能できる。
図21(A1)に例示するトランジスタ842は、トップゲート型のトランジスタの1つである。電極744aおよび電極744bは、絶縁層728および絶縁層729に形成した開口部において半導体層742と電気的に接続する。
本発明の一態様に係る表示装置を用いることができる電子機器として、表示機器、パーソナルコンピュータ、記録媒体を備えた画像記憶装置または画像再生装置、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図23に示す。
10B 副画素
10G 副画素
10R 副画素
11 画素
12 画素アレイ
13 ロードライバ
14 カラムドライバ
15 回路
16 選択回路
20 シフトレジスタ
21 バッファ回路
22 シフトレジスタ
23 バッファ回路
24 センサ
25 回路
26B 電極
26G 電極
26R 電極
101 トランジスタ
102 トランジスタ
102a トランジスタ
102b トランジスタ
103 トランジスタ
104 容量素子
110 回路ブロック
111 トランジスタ
112 トランジスタ
113 容量素子
114 EL素子
115 トランジスタ
116 容量素子
117 液晶素子
118 トランジスタ
119 トランジスタ
120 回路
121 配線
122 配線
123 配線
126 配線
128 配線
129 配線
130 配線
131 配線
132 配線
133 配線
134 配線
215 表示部
221a 走査線駆動回路
231a 信号線駆動回路
232a 信号線駆動回路
241a 共通線駆動回路
723 電極
726 絶縁層
728 絶縁層
729 絶縁層
741 絶縁層
742 半導体層
744a 電極
744b 電極
746 電極
755 不純物
771 基板
772 絶縁層
810 トランジスタ
811 トランジスタ
820 トランジスタ
821 トランジスタ
825 トランジスタ
826 トランジスタ
842 トランジスタ
843 トランジスタ
844 トランジスタ
845 トランジスタ
846 トランジスタ
847 トランジスタ
901 筐体
902 表示部
903 表示部
904 センサ
911 筐体
912 表示部
913 スピーカ
919 カメラ
921 柱
922 表示部
951 筐体
952 表示部
953 操作ボタン
954 外部接続ポート
955 スピーカ
956 マイク
957 カメラ
961 筐体
962 シャッターボタン
963 マイク
965 表示部
966 操作キー
967 スピーカ
968 ズームレバー
969 レンズ
971 筐体
973 表示部
974 操作キー
975 スピーカ
976 通信用接続端子
977 光センサ
4001 基板
4005 シール材
4006 基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4014 配線
4015 電極
4017 電極
4018 FPC
4019 異方性導電層
4020 容量素子
4021 電極
4030 電極層
4031 電極層
4032 絶縁層
4033 絶縁層
4035 スペーサ
4041 プリント基板
4042 集積回路
4102 絶縁層
4103 絶縁層
4104 絶縁層
4110 絶縁層
4111 絶縁層
4112 絶縁層
4131 着色層
4132 遮光層
4133 絶縁層
4200 入力装置
4210 タッチパネル
4227 電極
4228 電極
4237 配線
4238 配線
4239 配線
4263 基板
4272b FPC
4273b IC
4510 隔壁
4511 発光層
4513 発光素子
4514 充填材
Claims (8)
- 第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第1の容量素子と、回路ブロックと、第1の配線と、第2の配線と、第3の配線と、を有する表示装置であって、
前記第1のトランジスタのソースまたはドレインの一方は、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記第1の容量素子の一方の電極と電気的に接続され、
前記第1の容量素子の他方の電極は、前記第3のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第3のトランジスタのソースまたはドレインの一方は、前記回路ブロックと電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第1の配線に電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方は、前記第1の配線に電気的に接続され、
前記第1のトランジスタのゲートは、前記第3の配線と電気的に接続され、
前記第2のトランジスタのゲートは、前記第2の配線と電気的に接続され、
前記第3のトランジスタのゲートは、前記第2の配線と電気的に接続され、
前記回路ブロックは、表示素子を有し、
前記回路ブロックは、第6のトランジスタと、第3の容量素子と、前記表示素子として液晶素子と、を有し、
前記液晶素子の一方の電極は、前記第3の容量素子の一方の電極と電気的に接続され、
前記第3の容量素子の一方の電極は、前記第6のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第6のトランジスタのソースまたはドレインの他方は、前記第1の容量素子の他方の電極と電気的に接続されている表示装置。 - 第1のトランジスタと、第2のトランジスタと、第1の回路および第2の回路と、第1の配線と、第2の配線と、第3の配線と、第4の配線と、を有する表示装置であって、
前記第1の回路および前記第2の回路のそれぞれは、第3のトランジスタと、第1の容量素子と、回路ブロックと、を有し、
前記第3のトランジスタのソースまたはドレインの一方は、前記第1の容量素子の一方の電極と電気的に接続され、
前記第1の容量素子の一方の電極は、前記回路ブロックと電気的に接続され、
前記第1の容量素子の他方の電極は、前記第1のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの一方は、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第1の回路が有する前記第3のトランジスタのソースまたはドレインの他方は、前記第1の配線と電気的に接続され、
前記第2の回路が有する前記第3のトランジスタのソースまたはドレインの他方は、前記第4の配線と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第1の配線と電気的に接続され、
前記第1のトランジスタのゲートは、前記第3の配線と電気的に接続され、
前記第1の回路が有する前記第3のトランジスタのゲートは、前記第2の配線と電気的に接続され、
前記第2の回路が有する前記第3のトランジスタのゲートは、前記第2の配線と電気的に接続され、
前記第2のトランジスタのゲートは、前記第2の配線と電気的に接続され、
前記回路ブロックは表示素子を有する表示装置。 - 請求項2において、
前記回路ブロックは、第4のトランジスタと、第5のトランジスタと、第2の容量素子と、前記表示素子として有機EL素子と、を有し、
前記有機EL素子の一方の電極は、前記第5のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第5のトランジスタのソースまたはドレインの他方は、前記第2の容量素子の一方の電極と電気的に接続され、
前記第2の容量素子の一方の電極は、前記第4のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第4のトランジスタのゲートは、前記第2の容量素子の他方の電極と電気的に接続され、
前記第2の容量素子の他方の電極は、前記第1の容量素子の他方の電極と電気的に接続されている表示装置。 - 請求項3において、
前記第4のトランジスタのソースまたはドレインの他方は、前記第2のトランジスタのソースまたはドレインの他方と電気的に接続されている表示装置。 - 請求項2において、
前記回路ブロックは、第6のトランジスタと、第3の容量素子と、前記表示素子として液晶素子と、を有し、
前記液晶素子の一方の電極は、前記第3の容量素子の一方の電極と電気的に接続され、
前記第3の容量素子の一方の電極は、前記第6のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第6のトランジスタのソースまたはドレインの他方は、前記第1の容量素子の他方の電極と電気的に接続されている表示装置。 - 請求項1または5において、
前記第3の容量素子の他方の電極は、前記第2のトランジスタのソースまたはドレインの他方と電気的に接続されている表示装置。 - 請求項1乃至6のいずれか一項において、
前記第3のトランジスタは、チャネル形成領域に金属酸化物を有し、前記金属酸化物は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、NdまたはHf)と、を有する表示装置。 - 請求項1乃至7のいずれか一項に記載の表示装置と、カメラと、を有する電子機器。
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