JP7177962B2 - 表示装置、電子機器 - Google Patents
表示装置、電子機器 Download PDFInfo
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- JP7177962B2 JP7177962B2 JP2022125682A JP2022125682A JP7177962B2 JP 7177962 B2 JP7177962 B2 JP 7177962B2 JP 2022125682 A JP2022125682 A JP 2022125682A JP 2022125682 A JP2022125682 A JP 2022125682A JP 7177962 B2 JP7177962 B2 JP 7177962B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F27/00—Combined visual and audible advertising or displaying, e.g. for public address
- G09F27/005—Signs associated with a sensor
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Description
本実施の形態では、本発明の一態様である表示装置について、図面を参照して説明する。
本実施の形態では、液晶素子を用いた表示素子の構成例と、EL素子を用いた表示装置の構成例について説明する。なお、本実施の形態においては、実施の形態1で説明した表示装置の要素、動作および機能の説明は省略する。
本実施の形態では、上記実施の形態に示した各トランジスタに置き換えて用いることのできるトランジスタの一例について、図面を用いて説明する。
図19(A1)は、ボトムゲート型のトランジスタの一種であるチャネル保護型のトランジスタ810のチャネル長方向の断面図である。図19(A1)において、トランジスタ810は基板771上に形成されている。また、トランジスタ810は、基板771上に絶縁層772を介して電極746を有する。また、電極746上に絶縁層726を介して半導体層742を有する。電極746はゲート電極として機能できる。絶縁層726はゲート絶縁層として機能できる。
図21(A1)に例示するトランジスタ842は、トップゲート型のトランジスタの1つである。電極744aおよび電極744bは、絶縁層728および絶縁層729に形成した開口部において半導体層742と電気的に接続する。
本発明の一態様に係る表示装置を用いることができる電子機器として、表示機器、パーソナルコンピュータ、記録媒体を備えた画像記憶装置または画像再生装置、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図23に示す。
Claims (3)
- 第1のトランジスタと、第1の回路と、第2の回路と、第3の回路と、第1の配線と、第2の配線と、第3の配線と、を有する表示装置であって、
前記第1の回路乃至前記第3の回路のそれぞれは、第2のトランジスタと、容量素子と、表示素子と、を有し、
前記第2のトランジスタのソースまたはドレインの一方は、前記容量素子の一方の電極と電気的に接続され、
前記容量素子の一方の電極は、前記表示素子と電気的に接続され、
前記第1の配線は、前記第1の回路が有する前記第2のトランジスタのソースまたはドレインの他方と電気的に接続され、
前記第1の配線は、前記第2の回路が有する前記第2のトランジスタのソースまたはドレインの他方と電気的に接続され、
前記第2の配線は、前記第3の回路が有する前記第2のトランジスタのソースまたはドレインの他方と電気的に接続され、
前記第3の配線は、前記第1のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第1の回路乃至前記第3の回路のいずれかが有する前記容量素子の他方の電極と電気的に接続される表示装置。 - 請求項1において、
前記第1の回路乃至前記第3の回路は、それぞれ異なる色の光を外部に放出するための機能を有する表示装置。 - 請求項1または請求項2に記載の表示装置と、カメラと、を有する電子機器。
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JP2022180879A Withdrawn JP2023015272A (ja) | 2017-11-02 | 2022-11-11 | 表示装置、電子機器 |
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JPWO2019220275A1 (ja) * | 2018-05-18 | 2021-07-08 | 株式会社半導体エネルギー研究所 | 表示装置、及び表示装置の駆動方法 |
KR20210027110A (ko) | 2019-08-29 | 2021-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US11264597B2 (en) * | 2020-06-22 | 2022-03-01 | Sharp Kabushiki Kaisha | Multiple QD-LED sub-pixels for high on-axis brightness and low colour shift |
CN118158487A (zh) * | 2024-05-09 | 2024-06-07 | 深圳市深视智能科技有限公司 | 视频数据传输***及方法 |
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CN111247580A (zh) | 2020-06-05 |
US20220045106A1 (en) | 2022-02-10 |
JP7477672B2 (ja) | 2024-05-01 |
CN115458538A (zh) | 2022-12-09 |
JP2022164698A (ja) | 2022-10-27 |
US20200279874A1 (en) | 2020-09-03 |
DE112018005219T5 (de) | 2020-06-18 |
JP2024091809A (ja) | 2024-07-05 |
US11189643B2 (en) | 2021-11-30 |
JP7121743B2 (ja) | 2022-08-18 |
US11935897B2 (en) | 2024-03-19 |
US20230317733A1 (en) | 2023-10-05 |
US11715740B2 (en) | 2023-08-01 |
KR20200070252A (ko) | 2020-06-17 |
JP2023015272A (ja) | 2023-01-31 |
CN111247580B (zh) | 2022-10-14 |
WO2019087023A1 (ja) | 2019-05-09 |
JP2023075132A (ja) | 2023-05-30 |
JPWO2019087023A1 (ja) | 2020-12-17 |
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