JP7113230B2 - 半導体素子 - Google Patents
半導体素子 Download PDFInfo
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- JP7113230B2 JP7113230B2 JP2019027639A JP2019027639A JP7113230B2 JP 7113230 B2 JP7113230 B2 JP 7113230B2 JP 2019027639 A JP2019027639 A JP 2019027639A JP 2019027639 A JP2019027639 A JP 2019027639A JP 7113230 B2 JP7113230 B2 JP 7113230B2
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- 239000004065 semiconductor Substances 0.000 title claims description 203
- 238000002161 passivation Methods 0.000 claims description 121
- 230000002093 peripheral effect Effects 0.000 claims description 73
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 46
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000010408 film Substances 0.000 description 178
- 230000004888 barrier function Effects 0.000 description 33
- 238000000034 method Methods 0.000 description 21
- 239000012535 impurity Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000012360 testing method Methods 0.000 description 12
- 239000007943 implant Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000002513 implantation Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229920002577 polybenzoxazole Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 206010024796 Logorrhoea Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 Ti or Mo Chemical compound 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Description
主面および裏面を有する第1導電型の半導体基板と、
前記半導体基板の前記主面上に配置された第1導電型の炭化珪素半導体層と、
前記炭化珪素半導体層内に配置され、前記炭化珪素半導体層の中央領域を囲む第2導電型の終端領域と、
前記終端領域の一部を覆い、他の部分を露出する絶縁膜と、
前記炭化珪素半導体層の前記中央領域の少なくとも一部上に配置された第1電極と、
前記半導体基板の前記裏面上に配置され、前記半導体基板とオーミック接合を形成している第2電極と、
前記終端領域の前記他の部分上に配置され、前記第1電極を囲むシールリングと、
前記絶縁膜の少なくとも一部、および前記シールリングの少なくとも一部を覆い、有機膜を含むパッシベーション膜と、
を備え、
前記主面に垂直な方向から見たとき、
前記パッシベーション膜の外周端部は、前記シールリングの外周端部を囲み、
前記炭化珪素半導体層は、四角形状を有しており、
前記炭化珪素半導体層の辺部における、前記シールリングの外周端部から前記パッシベーション膜の外周端部までの距離をL2とし、
前記炭化珪素半導体層の角部における、前記シールリングの外周端部から前記パッシベーション膜の外周端部までの距離をL1とし、
前記炭化珪素半導体層の前記角部における、前記パッシベーション膜の外周端部の曲率半径をR1とすると、
L1>L2
かつ、
R1≧L2
を満たす。
主面および裏面を有する第1導電型の半導体基板と、
前記半導体基板の前記主面上に配置された第1導電型の炭化珪素半導体層と、
前記炭化珪素半導体層内に配置され、前記炭化珪素半導体層の中央領域を囲む第2導電型の終端領域と、
前記終端領域の一部を覆い、他の部分を露出する絶縁膜と、
前記炭化珪素半導体層の前記中央領域の少なくとも一部上に配置された第1電極と、
前記半導体基板の前記裏面上に配置され、前記半導体基板とオーミック接合を形成している第2電極と、
前記終端領域の前記他の部分上に配置され、前記第1電極を囲むシールリングと、
前記絶縁膜の少なくとも一部、および前記シールリングの少なくとも一部を覆い、有機膜を含むパッシベーション膜と、
を備え、
前記主面に垂直な方向から見たとき、
前記パッシベーション膜の外周端部は、前記シールリングの外周端部を囲み、
前記炭化珪素半導体層は、四角形状を有しており、
前記炭化珪素半導体層の辺部における、前記シールリングの外周端部から前記パッシベーション膜の外周端部までの距離をL2とし、
前記炭化珪素半導体層の角部における、前記シールリングの外周端部から前記パッシベーション膜の外周端部までの距離をL1とし、
前記炭化珪素半導体層の前記角部における、前記パッシベーション膜の外周端部の曲率半径をR1とすると、
L1>L2
かつ、
R1≧L2
を満たす。
L2は5μm以上25μm以下であってもよい。
前記主面に垂直な方向から見たときの前記炭化珪素半導体層の前記角部における、前記パッシベーション膜の外周端部の曲率中心は、前記シールリングの外周端部によって囲まれた領域内に位置していてもよい。
前記主面に垂直な方向から見たときの前記角部における前記シールリングの外周端部の曲率半径をR5とすると、
R1<R5
を満たしてもよい。
前記シールリングは金属を含んでいてもよい。
前記半導体素子は、前記第1電極上に、前記シールリングと同じ金属を含む表面電極を備えていてもよい。
前記第1電極は、前記炭化珪素半導体層とショットキー接合を形成していてもよい。
以下、図面を参照しながら、本開示の半導体素子の実施形態を説明する。本実施形態では、第1導電型がn型、第2導電型がp型である例について示すが、これに限定されない。本開示の実施形態において、第1導電型がp型、第2導電型がn型であってもよい。
図1から図17を参照して、本実施形態に係る半導体素子1000を説明する。
L1>L2
R1≧L2
となるように点Qの位置が決定される。L1>L2により、半導体素子の角部において、シールリング1120外側におけるパッシベーション膜114と絶縁膜111との接触面積を大きくできる。また、R1=L2のとき、点Qは、左右側におけるシールリング1120の外周端部の辺を延長した垂直線と、上下側におけるシールリング1120の外周端部の辺を延長した水平線とが交差する4つの点のいずれかに位置する。この条件により、角部におけるパッシベーション膜114の外周端部が直角である形状は排除される。角部におけるパッシベーション膜114の外周端部が直角であると、この箇所に応力が集中してパッシベーション膜114の浮きが生じやすくなる。角部におけるパッシベーション膜114の外周端部が丸ければ、特定の箇所への応力集中が緩和され、パッシベーション膜114の浮きが生じにくくなる。
L3>L1
の関係が成り立つ。距離L3によって示された領域もまた、半導体素子5000の非アクティブ領域である。いわば、距離L3によって示された領域は、電流通電に寄与しない無駄な領域である。ここで再度図5に着目する。シールリング1120の外周端部および内周端部の曲率半径をそれぞれR5、およびR6とすると、曲率中心点Pをできる限り外側に配置して曲率半径R5およびR6を小さくすることにより、距離L3を小さくすることができる。これにより、半導体素子5000の導通領域、すなわちアクティブ領域をより大きくすることができる。
L1>L2
R1≧L2
を満たすように、パッシベーション膜114が配置される。これにより、角部でのパッシベーション膜114の浮きおよび/または剥離の防止と、パッシベーション膜114の浮きの進行状況とをモニタリングでき、半導体素子1000の信頼性不良を事前に予測できる。
次に、本実施形態に係る半導体素子1000の製造方法を説明する。図9から図17は、本実施形態に係る半導体素子1000の製造方法の一部を説明する断面図である。
以下、本実施形態の半導体素子の変形例を説明する。
101 半導体基板
102 ドリフト層、半導体層
102B バッファ層
110 第2電極
111 絶縁膜
111A 絶縁膜の内側
111B 絶縁膜の外側
112 表面電極
113 裏面電極
114 パッシベーション膜
150 終端領域
151 ガードリング領域
152 FLR領域
153 バリア領域
154 終端注入領域
159 第1電極
1120 シールリング
Claims (7)
- 主面および裏面を有する第1導電型の半導体基板と、
前記半導体基板の前記主面上に配置された第1導電型の炭化珪素半導体層と、
前記炭化珪素半導体層内に配置され、前記炭化珪素半導体層の中央領域を囲む第2導電型の終端領域と、
前記終端領域の一部を覆い、他の部分を露出する絶縁膜と、
前記炭化珪素半導体層の前記中央領域の少なくとも一部上に配置された第1電極と、
前記半導体基板の前記裏面上に配置され、前記半導体基板とオーミック接合を形成している第2電極と、
前記終端領域の前記他の部分上に配置され、前記第1電極を囲むシールリングと、
前記絶縁膜の少なくとも一部、および前記シールリングの少なくとも一部を覆い、有機膜を含むパッシベーション膜と、
を備え、
前記主面に垂直な方向から見たとき、
前記パッシベーション膜の外周端部は、前記シールリングの外周端部を囲み、
前記炭化珪素半導体層は、四角形状を有しており、
前記炭化珪素半導体層の辺部における、前記シールリングの外周端部から前記パッシベーション膜の外周端部までの距離をL2とし、
前記炭化珪素半導体層の角部における、前記シールリングの外周端部から前記パッシベーション膜の外周端部までの距離をL1とし、
前記炭化珪素半導体層の前記角部における、前記パッシベーション膜の外周端部の曲率半径をR1とすると、
L1>L2
かつ、
R1≧L2
を満たす、
半導体素子。 - L2は5μm以上25μm以下である、
請求項1に記載の半導体素子。 - 前記主面に垂直な方向から見たときの前記炭化珪素半導体層の前記角部における、前記パッシベーション膜の外周端部の曲率中心は、前記シールリングの外周端部によって囲まれた領域内に位置する、
請求項1に記載の半導体素子。 - 前記主面に垂直な方向から見たときの前記角部における前記シールリングの外周端部の曲率半径をR5とすると、
R1<R5
を満たす、
請求項1に記載の半導体素子。 - 前記シールリングは金属を含む、
請求項1から4のいずれかに記載の半導体素子。 - 前記第1電極上に、前記シールリングと同じ金属を含む表面電極を備える、
請求項5に記載の半導体素子。 - 前記第1電極は、前記炭化珪素半導体層とショットキー接合を形成している、
請求項1から6のいずれかに記載の半導体素子。
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