JP7090686B2 - 成膜装置及び電子デバイスの製造方法 - Google Patents

成膜装置及び電子デバイスの製造方法 Download PDF

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Publication number: JP7090686B2
Authority: JP; Japan
Prior art keywords: substrate; film forming; mask; forming apparatus; electrostatic chuck
Prior art date: 2019-12-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2020200859A

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English (en)

Japanese (ja)

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JP2021102811A (ja

Inventor

大介青沼

洋紀菅原

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Canon Tokki Corp

Original Assignee

Canon Tokki Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2019-12-24

Filing date

2020-12-03

Publication date

2022-06-24

2020-12-03 Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp

2021-07-15 Publication of JP2021102811A publication Critical patent/JP2021102811A/ja

2022-06-24 Application granted granted Critical

2022-06-24 Publication of JP7090686B2 publication Critical patent/JP7090686B2/ja

Status Active legal-status Critical Current

2040-12-03 Anticipated expiration legal-status Critical

Links

238000004519 manufacturing process Methods 0.000 title claims description 23
239000000758 substrate Substances 0.000 claims description 119
239000010408 film Substances 0.000 claims description 89
238000001816 cooling Methods 0.000 claims description 57
239000000463 material Substances 0.000 claims description 18
238000000034 method Methods 0.000 claims description 17
238000000427 thin-film deposition Methods 0.000 claims 1
239000010410 layer Substances 0.000 description 49
238000001704 evaporation Methods 0.000 description 12
230000008020 evaporation Effects 0.000 description 11
230000015572 biosynthetic process Effects 0.000 description 10
230000005525 hole transport Effects 0.000 description 10
238000001179 sorption measurement Methods 0.000 description 8
239000011368 organic material Substances 0.000 description 6
239000003507 refrigerant Substances 0.000 description 6
238000007740 vapor deposition Methods 0.000 description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
239000002184 metal Substances 0.000 description 5
229910052710 silicon Inorganic materials 0.000 description 5
239000010703 silicon Substances 0.000 description 5
238000011144 upstream manufacturing Methods 0.000 description 5
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
238000000151 deposition Methods 0.000 description 4
230000006866 deterioration Effects 0.000 description 4
239000001301 oxygen Substances 0.000 description 4
229910052760 oxygen Inorganic materials 0.000 description 4
230000006870 function Effects 0.000 description 3
239000011521 glass Substances 0.000 description 3
239000012044 organic layer Substances 0.000 description 3
239000010409 thin film Substances 0.000 description 3
238000001771 vacuum deposition Methods 0.000 description 3
239000004925 Acrylic resin Substances 0.000 description 2
229920000178 Acrylic resin Polymers 0.000 description 2
239000000853 adhesive Substances 0.000 description 2
230000001070 adhesive effect Effects 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
238000010586 diagram Methods 0.000 description 2
238000005286 illumination Methods 0.000 description 2
239000011261 inert gas Substances 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
239000011241 protective layer Substances 0.000 description 2
238000003860 storage Methods 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
229910001111 Fine metal Inorganic materials 0.000 description 1
239000004642 Polyimide Substances 0.000 description 1
239000003086 colorant Substances 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000008021 deposition Effects 0.000 description 1
229910001873 dinitrogen Inorganic materials 0.000 description 1
230000005684 electric field Effects 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
239000012212 insulator Substances 0.000 description 1
238000001459 lithography Methods 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
239000007769 metal material Substances 0.000 description 1
229910044991 metal oxide Inorganic materials 0.000 description 1
150000004706 metal oxides Chemical class 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
229920001721 polyimide Polymers 0.000 description 1
239000002861 polymer material Substances 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
238000004528 spin coating Methods 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1

Images

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes

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Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Manufacturing & Machinery (AREA)
General Chemical & Material Sciences (AREA)
Electroluminescent Light Sources (AREA)
Physical Vapour Deposition (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

JP2020200859A 2019-12-24 2020-12-03 成膜装置及び電子デバイスの製造方法 Active JP7090686B2 (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
KR10-2019-0173918		2019-12-24
KR1020190173918A KR20210081700A (ko)	2019-12-24	2019-12-24	성막장치 및 이를 사용하여 전자 디바이스를 제조하는 방법

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Publication Number	Publication Date
JP2021102811A JP2021102811A (ja)	2021-07-15
JP7090686B2 true JP7090686B2 (ja)	2022-06-24

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JP (1)	JP7090686B2 (zh)
KR (1)	KR20210081700A (zh)
CN (1)	CN113106387B (zh)

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JPWO2023084634A1 (zh) *	2021-11-10	2023-05-19

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JP2002075639A (ja)	2000-08-29	2002-03-15	Sony Corp	パターン形成装置、パターン形成方法、有機電界発光素子ディスプレイの製造装置及び製造方法
CN101418433A (zh)	2008-10-17	2009-04-29	湖南玉丰真空科学技术有限公司	一种可提高靶材利用率的平面磁控溅射阴极
JP2019116679A (ja)	2017-12-27	2019-07-18	キヤノントッキ株式会社	成膜装置、成膜方法、及び電子デバイスの製造方法

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JP2004091913A (ja) *	2002-07-10	2004-03-25	Sony Corp	成膜装置および成膜方法
JP4609759B2 (ja) *	2005-03-24	2011-01-12	三井造船株式会社	成膜装置
CN101675178A (zh) *	2007-11-30	2010-03-17	佳能安内华股份有限公司	基板处理设备及基板处理方法
JP5424972B2 (ja) *	2010-04-23	2014-02-26	株式会社アルバック	真空蒸着装置
JP2013204129A (ja) *	2012-03-29	2013-10-07	Hitachi High-Technologies Corp	真空蒸着装置及び真空蒸着方法
JP2014065959A (ja) *	2012-09-27	2014-04-17	Hitachi High-Technologies Corp	蒸着装置、および、蒸着装置における基板設置方法
CN106637073A (zh) *	2016-10-14	2017-05-10	深圳市华星光电技术有限公司	真空蒸镀装置
KR102008581B1 (ko) *	2017-11-29	2019-08-07	캐논 톡키 가부시키가이샤	성막장치, 성막방법, 및 유기 el 표시장치의 제조방법
KR101953038B1 (ko) *	2017-12-13	2019-02-27	캐논 톡키 가부시키가이샤	정전척 장치, 마스크 부착장치, 성막장치, 성막방법, 및 전자 디바이스의 제조 방법

2019
- 2019-12-24 KR KR1020190173918A patent/KR20210081700A/ko active Search and Examination
2020
- 2020-12-03 JP JP2020200859A patent/JP7090686B2/ja active Active
- 2020-12-24 CN CN202011543657.4A patent/CN113106387B/zh active Active

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2002075639A (ja)	2000-08-29	2002-03-15	Sony Corp	パターン形成装置、パターン形成方法、有機電界発光素子ディスプレイの製造装置及び製造方法
CN101418433A (zh)	2008-10-17	2009-04-29	湖南玉丰真空科学技术有限公司	一种可提高靶材利用率的平面磁控溅射阴极
JP2019116679A (ja)	2017-12-27	2019-07-18	キヤノントッキ株式会社	成膜装置、成膜方法、及び電子デバイスの製造方法

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Publication number	Publication date
KR20210081700A (ko)	2021-07-02
CN113106387A (zh)	2021-07-13
CN113106387B (zh)	2023-05-19
JP2021102811A (ja)	2021-07-15

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