JP7086133B2 - 波長変換発光デバイス - Google Patents
波長変換発光デバイス Download PDFInfo
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H01L33/50—Wavelength conversion elements
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2924/11—Device type
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Description
本発明は、パッケージングされた波長変換発光デバイスに関する。
活性領域118がn型領域116の上に形成され、p型領域120が活性領域118の上に形成される。p型領域120、活性領域118及びn型領域116の一部がエッチング除去され、n型領域116の一部を露出する。p型コンタクト121がp型領域120の上に堆積され、n型コンタクト122がn型領域116の露出部の上に堆積される。このLEDが裏返しにされて、ハンダなどの材料126、128により、サブマウント129に取り付けられる。
開放層56及びモールディング材料が都合良く選択され、それにより開放層56がLEDの底部表面上の金属に良好に接着するが、モールディング材料には比較的に弱く接着する。モールディング後に、LEDを開放層から容易に除去することができる。
Claims (12)
- 発光デバイスであって:
各々が、第1表面と、対向して配置される第2表面と、前記第1表面及び前記第2表面を接続する複数の側部表面と、前記第2表面上に配置された2つ以上の電気的相互接続部とを有する、発光半導体ダイオード構造のアレイ;
前記発光半導体ダイオード構造の前記第1表面及び全ての側部表面に直接接触して等厚的に配置される波長変換層であり、前記発光半導体ダイオード構造の各々の前記第1表面上に配置された複数の頂部平坦領域と、該複数の頂部平坦領域に垂直な複数の平坦側部領域とを備え、隣接する前記発光半導体ダイオード構造の間の空間に配置された当該波長変換層が前記複数の頂部平坦領域に平行な複数の凹部平坦領域を形成し、当該波長変換層が波長変換材料、第1接着材料及び第1透明材料を含み、前記第1透明材料は、前記波長変換材料又は前記第1接着材料の熱伝導性よりも高い熱伝導性を有する、波長変換層;
前記波長変換層上に配置される光学素子層であり、第2透明材料を含む光学素子層;及び
前記波長変換層の露出した表面と、前記2つ以上の電気的相互接続部の露出した表面とを含む一つの露出した平坦表面;
を有する、発光デバイス。 - 請求項1に記載の発光デバイスであり、
前記光学素子層がさらに第2接着材料を含み、前記第2透明材料が前記第2接着材料よりも高い熱伝導性を有する、
発光デバイス。 - 請求項2に記載の発光デバイスであり、
前記波長変換層の前記第1接着材料は、前記波長変換層の20重量%以下である、発光デバイス。 - 請求項1に記載の発光デバイスであり、
前記波長変換層が、少なくとも0.5W/mKの熱伝導性を有する、発光デバイス。 - 請求項1に記載の発光デバイスであり、
前記波長変換層が、少なくとも1W/mKの熱伝導性を有する、発光デバイス。 - 請求項2に記載の発光デバイスであり、
前記波長変換層の前記第1透明材料は、前記波長変換層の少なくとも50重量%である、発光デバイス。 - 請求項1に記載の発光デバイスであり、
前記光学素子層が、少なくとも0.5W/mKの熱伝導性を有する、発光デバイス。 - 請求項1に記載の発光デバイスであり、
前記光学素子層が、少なくとも1W/mKの熱伝導性を有する、発光デバイス。 - 請求項1に記載の発光デバイスであり、
前記波長変換層が、少なくとも50μmの厚さを有する、発光デバイス。 - 請求項1に記載の発光デバイスであり、
前記波長変換層の前記第1接着材料は、前記波長変換層の15重量%以下である、発光デバイス。 - 請求項1に記載の発光デバイスであり、
前記アレイ中の各前記発光半導体ダイオード構造が他の前記発光半導体ダイオード構造から400μm以下の間隔である、発光デバイス。 - 請求項1に記載の発光デバイスであり、
前記発光半導体ダイオード構造が、前記波長変換層を通じてのみ互いに機械的に接続されている、発光デバイス。
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US201462016708P | 2014-06-25 | 2014-06-25 | |
US62/016,708 | 2014-06-25 |
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US (1) | US10998473B2 (ja) |
EP (1) | EP3161880B1 (ja) |
JP (2) | JP6703494B2 (ja) |
KR (1) | KR102467614B1 (ja) |
CN (1) | CN106415863A (ja) |
TW (1) | TW201616689A (ja) |
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US8384105B2 (en) * | 2010-03-19 | 2013-02-26 | Micron Technology, Inc. | Light emitting diodes with enhanced thermal sinking and associated methods of operation |
DE102015102460A1 (de) * | 2015-02-20 | 2016-08-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines lichtemittierenden Bauteils und lichtemittierendes Bauteil |
KR102417181B1 (ko) * | 2015-11-09 | 2022-07-05 | 삼성전자주식회사 | 발광 패키지, 반도체 발광 소자, 발광 모듈 및 발광 패키지의 제조 방법 |
TWI583028B (zh) * | 2016-02-05 | 2017-05-11 | 行家光電股份有限公司 | 具有光形調整結構之發光裝置及其製造方法 |
US10797209B2 (en) | 2016-02-05 | 2020-10-06 | Maven Optronics Co., Ltd. | Light emitting device with beam shaping structure and manufacturing method of the same |
CN107154453B (zh) * | 2016-03-04 | 2021-11-16 | 日东电工(上海松江)有限公司 | 元件集合体临时固定片及其制造方法 |
JP6928437B2 (ja) * | 2016-03-04 | 2021-09-01 | 日東電工(上海松江)有限公司 | 封止光半導体素子の製造方法 |
JP6940740B2 (ja) * | 2016-05-06 | 2021-09-29 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US20170345983A1 (en) * | 2016-05-26 | 2017-11-30 | Epistar Corporation | Light-emitting device and light-emitting apparatus comprising the same |
CN105957943A (zh) * | 2016-06-17 | 2016-09-21 | 深圳市兆驰节能照明股份有限公司 | 芯片级封装发光装置及其制造方法 |
CN105938869A (zh) * | 2016-06-21 | 2016-09-14 | 深圳市兆驰节能照明股份有限公司 | 双层结构芯片级封装光源及其制造方法 |
US11637225B2 (en) * | 2017-12-20 | 2023-04-25 | Lumileds Llc | Converter with glass layers |
WO2019126000A1 (en) * | 2017-12-22 | 2019-06-27 | Lumileds Llc | Porous micron-sized particles to tune light scattering |
WO2023091698A1 (en) * | 2021-11-18 | 2023-05-25 | Lumileds Llc | Light-emitting diode (led) package with reflective coating and method of manufacture |
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EP3161880B1 (en) | 2022-06-29 |
KR20170020914A (ko) | 2017-02-24 |
JP6703494B2 (ja) | 2020-06-03 |
US20170133560A1 (en) | 2017-05-11 |
US10998473B2 (en) | 2021-05-04 |
CN106415863A (zh) | 2017-02-15 |
JP2017520926A (ja) | 2017-07-27 |
JP2020145453A (ja) | 2020-09-10 |
TW201616689A (zh) | 2016-05-01 |
KR102467614B1 (ko) | 2022-11-16 |
WO2015198220A1 (en) | 2015-12-30 |
EP3161880A1 (en) | 2017-05-03 |
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