JP7082976B2 - 感応性電界効果デバイス及びその製造方法 - Google Patents
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
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- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/36—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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Description
酸化イットリウム(Y2O3);
酸化ジルコニウム(ZrO2)
酸化ハフニウム(HfO2)
五酸化タンタル(TaO5)
酸化ビスマス(Bi2O3)
のうちの少なくとも1つからなる。
-典型的なRFIDチップ401のインピーダンス要件に適合する十分に高いオン/オフ比;
-センサ状態が不明確になる遷移領域の幅を決定する急勾配のサブ閾値勾配;
-高い動作周波数においても高いインピーダンス状態を実現するための低い寄生キャパシタンス;及び
-安定な電荷状態を実現するための低いリーク電流(<10nA/cm2);
-RFIDチップ401の周波数において低いインピーダンス状態を実現するための高いカットオフ周波数(>30kHz)。
Claims (14)
- 基板(160)と、
前記基板(160)の上に配列された複数の電離感応性電界効果デバイス(100)と、を備え、
前記電離感応性電界効果デバイス(100)のそれぞれは、
半導体チャネル(110)と、
前記半導体チャネル(110)に接続されたソース電極(120)と、
前記半導体チャネル(110)が前記ソース電極(120)とドレイン電極(130)の間に介在するように、前記半導体チャネル(110)に接続されたドレイン電極(130)と、
異なる周波数におけるゲート容量(CG)がゲート-ソース間電圧(VGS)の関数であるゲート電極(140)と、
前記ゲート電極(140)と前記半導体チャネル(110)との間に介挿された誘電体層(150)と、
関連する前記電離感応性電界効果デバイス(100)のソース電極(120)及びゲート電極(140)に接続された1対の電極を有し、RFID受信機(RFID-R)に接続可能に構成された少なくとも1つのRFID送信機(400)と、
を備え、
前記半導体チャネル(110)は層であって、アモルファス酸化物からなり、
前記誘電体層(150)は、電離放射線に暴露可能に配置され、
前記誘電体層(150)は、検出すべき入射電離放射線の吸収を増加するために選択された原子番号を有する少なくとも1つの陽イオン元素を有する少なくとも1つの材料からなる少なくとも1つの主層を含み、
前記誘電体層(150)の前記少なくとも1つの材料は、高い原子番号Zを有し、前記原子番号Zは36より高く(Z>36)、
前記RFID送信機(400)は、その状態を、高インピーダンスである0論理状態から低インピーダンスである1論理状態へ切り替え、その状態の変化を、前記RFID受信機(RFID-R)へ送信する、
ことを特徴とする検出センサ。 - 前記アモルファス酸化物は、高い移動度のアモルファス酸化物であって、インジウム・ガリウム・亜鉛酸化物(IGZO)及び/又はインジウム・ハフニウム・亜鉛酸化物(IHZO)及び/又は亜鉛・錫酸化物(ZTO)及び/又はガリウム・亜鉛・錫酸化物(GZTO)からなる群から選ばれる、
ことを特徴とする請求項1に記載の検出センサ。 - 前記誘電体層(150)の前記少なくとも1つの主層は、酸化イットリウム(Y2O3)及び/又は酸化ジルコニウム(ZrO2)及び/又は酸化ハフニウム(HfO2)及び/又は五酸化タンタル(Ta2O5)及び/又は酸化ビスマス(Bi2O3)からなる、
ことを特徴とする請求項1又は2に記載の検出センサ。 - 前記電離感応性電界効果デバイス(100)のそれぞれの前記誘電体層(150)は、前記ソース電極(120)及び前記ドレイン電極(130)に電気的に接触している、
ことを特徴とする請求項1-3の何れかに記載の検出センサ。 - 前記電離感応性電界効果デバイス(100)のそれぞれの前記誘電体層(150)は、150nmより大きい又はそれに等しい厚さを有する、
ことを特徴とする請求項1-4の何れかに記載の検出センサ。 - 前記電離感応性電界効果デバイス(100)のそれぞれの前記誘電体層(150)は、多層であって、前記主層の原子番号より低い原子番号を有する1つ以上の絶縁層を備える、
ことを特徴とする請求項1-5の何れかに記載の検出センサ。 - 前記電離感応性電界効果デバイス(100)のそれぞれの前記誘電体層(150)の前記1つ以上の絶縁層は、二酸化シリコン(SiO2)及び/又は酸化アルミニウム(Al2O3)からなる、
ことを特徴とする請求項6に記載の検出センサ。 - 前記電離感応性電界効果デバイス(100)のそれぞれの前記誘電体層(150)は、
低い原子番号を有する前記絶縁層と前記主層とが2~10回繰り返されてなる複合層と、
低い原子番号を有する前記絶縁層の最上層と、を備える、
ことを特徴とする請求項6又は7に記載の検出センサ。 - 前記電離感応性電界効果デバイス(100)のそれぞれは、少なくとも1つの基板(160)を備え、該基板の上に前記ゲート電極(140)と前記誘電体層(150)が堆積されている、
ことを特徴とする請求項1-8の何れかに記載の検出センサ。 - 前記電離感応性電界効果デバイス(100)のそれぞれの前記ゲート電極(140)、前記ソース電極(120)及び前記ドレイン電極(130)は、例えば、モリブデン(Mo)、銅(Cu)、アルミニウム(Al)、金(Au)、銀(Ag)からなる導電材料、例えば、ガリウム添加酸化亜鉛(GZO)、インジウム亜鉛酸化物(IZO)からなる導電性酸化物、又は、例えば、Pedot:Pssからなる導電性ポリマで形成される、
ことを特徴とする請求項1-9の何れかに記載の検出センサ。 - 前記基板は、ポリエチレンナフタレイトからなる、
ことを特徴とする請求項10に記載の検出センサ。 - 前記電離感応性電界効果デバイス(100)は、アレイ状又はマトリクス状に配列されている、
ことを特徴とする請求項10又は11に記載の検出センサ。 - 前記RFID送信機(400)は、RFIDチップ(401)及びアンテナ(402)を備える、
ことを特徴とする請求項1-12の何れかに記載の検出センサ。 - 複数のRFID送信機(400)を備え、前記各RFID送信機の各々は、関連する前記電離感応性電界効果デバイス(100)に動作可能に接続されている、
ことを特徴とする請求項1-13の何れかに記載の検出センサ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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PT18241216 | 2016-11-14 | ||
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PCT/IT2017/000050 WO2018087787A1 (en) | 2016-11-14 | 2017-03-14 | Sensitive field effect device and manufacturing method thereof |
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CN112040868A (zh) * | 2018-05-14 | 2020-12-04 | 深圳帧观德芯科技有限公司 | 用于对***进行成像的装置 |
CN112054088A (zh) * | 2020-08-28 | 2020-12-08 | 深圳中芯光宇科技有限公司 | 基于场效应晶体管结构的x射线探测器及其制备方法 |
US20220208996A1 (en) * | 2020-12-31 | 2022-06-30 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
CN112909116B (zh) * | 2021-01-18 | 2023-08-04 | 华中科技大学 | 一种基于介电层响应的场效应管光电探测器 |
CN113410306B (zh) * | 2021-06-15 | 2023-06-30 | 西安微电子技术研究所 | 一种抗总剂量辐射加固ldmos器件结构及制备方法 |
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WO2018087787A1 (en) | 2018-05-17 |
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