JP7080231B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7080231B2 JP7080231B2 JP2019526390A JP2019526390A JP7080231B2 JP 7080231 B2 JP7080231 B2 JP 7080231B2 JP 2019526390 A JP2019526390 A JP 2019526390A JP 2019526390 A JP2019526390 A JP 2019526390A JP 7080231 B2 JP7080231 B2 JP 7080231B2
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- transistor
- insulator
- oxide semiconductor
- wiring
- conductor
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Images
Classifications
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- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
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Description
本実施の形態では、本発明の一形態であるOSトランジスタを用いた記憶装置について説明を行う。
図1は記憶装置の構成例を示すブロック図である。図1に示す記憶装置100は、セルアレイ110、周辺回路111、コントロール回路112、電位生成回路127、およびパワースイッチ(PSW)141、142を有する。
図2(A)はセル10の構成例を示すブロック図である。セル10は、メモリセルアレイ1a、メモリセルアレイ1b、メモリセルアレイ1c、メモリセルアレイ1d、および回路20を有する。
次に、図4および図5を用いて、セル10の動作について説明を行う。
図3に示すセル10は、ノードN1およびノードN2にVPREをプリチャージしてもよい。その場合の回路図を図6に示す。図6に示すセル10は、回路20に含まれるスイッチ3a乃至3dが省略され、代わりにスイッチ27およびスイッチ28が追加されている点で図3に示すセル10と異なる。
図8は図3に示すセル10の回路図を立体的に示したものである。図8において、配線CLは、容量素子C1の第2電極に電気的に接続され、GNDが与えられる。
本実施の形態では、上記実施の形態に示す記憶装置の変形例について説明する。
図11に、nチャネル型の単極性回路によって構成されたセル10の構成例を示す。図11に示す回路20は、図3に示すスイッチ4a乃至4dとしてnチャネル型のトランジスタ40a乃至40dを用いている。トランジスタ40aおよび40bのゲートには信号BE1が入力され、トランジスタ40cおよび40dのゲートには信号BE2が入力される。また、トランジスタ5a乃至5dとしてnチャネル型のトランジスタが用いられる。また、トランジスタ23のソースまたはドレインの一方、およびトランジスタ24のソースまたはドレインの一方は、電位VPREが与えられる配線と電気的に接続されている。
次に、図12に示すセル10の動作例について説明する。図13乃至図16は、図12に示すセル10の動作例を示すタイミングチャートである。なお、図13および図14は、メモリセルに記憶されたデータを読み出す際の動作を示し、図15および図16は、メモリセルにデータを書き込む際の動作を示す。
メモリセルに記憶されたデータを読み出す際の動作を、図13を用いて説明する。ここでは具体例として、メモリセル2a[0]に格納されたデータ“L”を読み出す場合の動作について詳述する。
次に、メモリセルにデータを書き込む際の動作を、図15を用いて説明する。ここでは具体例として、データ“H”が格納されたメモリセル2a[0]に、データ“L”を上書きする場合の動作について詳述する。
本実施の形態では、上記実施の形態で説明した記憶装置に供給される電源を制御する機能を有する電源制御部の構成例について、図17を用いて説明する。
以下では、実施の形態1に示すトランジスタM1に用いることが可能なOSトランジスタの構成例について、図18乃至図20を用いて説明する。
本実施の形態は、上記実施の形態に示す記憶装置が組み込まれた電子部品および電子機器の一例を示す。
まず、記憶装置100が組み込まれた電子部品の例を、図21(A)、(B)を用いて説明を行う。
次に、上記電子部品を有する電子機器の例について図22および図23を用いて説明を行う。
本実施の形態は、実施の形態1に示す記憶装置100が組み込まれたGPU(Graphics Processing Unit)について説明する。図24は、GPUの構成例を示す機能ブロック図である。
Claims (6)
- 第1メモリセル乃至第2メモリセルと、第1配線乃至第2配線と、第1スイッチ乃至第2スイッチと、センスアンプと、第3トランジスタ乃至第6トランジスタと、を有し、
前記第1メモリセルは、第1トランジスタ及び第1容量素子を有し、
前記第1トランジスタのソースまたはドレインの一方は、前記第1配線と電気的に接続され、
前記第1トランジスタのソースまたはドレインの他方は、前記第1容量素子と電気的に接続され、
前記第2メモリセルは、第2トランジスタ及び第2容量素子を有し、
前記第2トランジスタのソースまたはドレインの一方は、前記第2配線と電気的に接続され、
前記第2トランジスタのソースまたはドレインの他方は、前記第2容量素子と電気的に接続され、
前記センスアンプは第1ノード及び第2ノードを有し、
前記第1配線は、前記第1スイッチを介して、前記第1ノードと電気的に接続され、
前記第2配線は、前記第2スイッチを介して、前記第2ノードと電気的に接続され、
前記センスアンプは、前記第1ノードと前記第2ノードの電位差を増幅し、
前記第3トランジスタのソースまたはドレインの一方は、前記第1ノードと電気的に接続され、
前記第3トランジスタのソースまたはドレインの他方は、前記第4トランジスタのソースまたはドレインの一方と電気的に接続され、
前記第3トランジスタのゲートは、前記第1配線と電気的に接続され、
前記第5トランジスタのソースまたはドレインの一方は、前記第2ノードと電気的に接続され、
前記第5トランジスタのソースまたはドレインの他方は、前記第6トランジスタのソースまたはドレインの一方と電気的に接続され、
前記第5トランジスタのゲートは、前記第2配線と電気的に接続されている半導体装置。 - 請求項1において、
前記第1スイッチ及び前記第2スイッチは、nチャネル型のトランジスタによって構成され、
前記センスアンプは、nチャネル型のトランジスタを用いた単極性回路によって構成されている半導体装置。 - 請求項1または請求項2において、
前記第1トランジスタ及び前記第2トランジスタは、チャネル形成領域に酸化物半導体を含む半導体装置。 - 請求項1または請求項2において、
前記第1メモリセル及び前記第2メモリセルは、前記センスアンプよりも上層に設けられる半導体装置。 - 請求項1乃至4のいずれか一において、
前記第1配線の電位を、前記第1メモリセルに保持されたデータに対応する電位とした後、前記第4トランジスタ及び前記第6トランジスタをオンにする機能を有する半導体装置。 - 請求項5において、
前記第1配線及び前記第2配線をプリチャージした後、前記第1配線の電位を、前記第1メモリセルに保持されたデータに対応する電位とする機能を有する半導体装置。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007110933A1 (ja) | 2006-03-28 | 2007-10-04 | Fujitsu Limited | 半導体メモリおよびシステム |
JP2009259379A (ja) | 2008-03-17 | 2009-11-05 | Elpida Memory Inc | 半導体装置 |
JP2011248971A (ja) | 2010-05-28 | 2011-12-08 | Elpida Memory Inc | 半導体装置 |
JP2013531860A (ja) | 2010-06-10 | 2013-08-08 | モサイド・テクノロジーズ・インコーポレーテッド | センス増幅器およびビット線分離を備える半導体メモリデバイス |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS52108743A (en) | 1976-03-10 | 1977-09-12 | Toshiba Corp | Dynamic memory device |
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KR100413065B1 (ko) * | 2001-01-04 | 2003-12-31 | 삼성전자주식회사 | 반도체 메모리 장치의 비트 라인 부스팅 커패시터의 배치구조 |
US6426905B1 (en) * | 2001-02-07 | 2002-07-30 | International Business Machines Corporation | High speed DRAM local bit line sense amplifier |
EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
US7359265B2 (en) | 2006-01-04 | 2008-04-15 | Etron Technology, Inc. | Data flow scheme for low power DRAM |
JP2008065971A (ja) * | 2006-08-10 | 2008-03-21 | Fujitsu Ltd | 半導体メモリおよびメモリシステム |
JP2008293605A (ja) * | 2007-05-25 | 2008-12-04 | Elpida Memory Inc | 半導体記憶装置 |
US7738306B2 (en) | 2007-12-07 | 2010-06-15 | Etron Technology, Inc. | Method to improve the write speed for memory products |
JP2010061734A (ja) | 2008-09-03 | 2010-03-18 | Toshiba Corp | 半導体記憶装置 |
US8625339B2 (en) | 2011-04-11 | 2014-01-07 | Grandis, Inc. | Multi-cell per memory-bit circuit and method |
US9275721B2 (en) | 2010-07-30 | 2016-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Split bit line architecture circuits and methods for memory devices |
US8907392B2 (en) * | 2011-12-22 | 2014-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including stacked sub memory cells |
US9607991B2 (en) | 2013-09-05 | 2017-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6635670B2 (ja) | 2014-04-11 | 2020-01-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9672886B2 (en) | 2014-05-05 | 2017-06-06 | The Regents Of The University Of California | Fast and low-power sense amplifier and writing circuit for high-speed MRAM |
WO2015170220A1 (en) | 2014-05-09 | 2015-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
KR20170069207A (ko) | 2014-10-10 | 2017-06-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 회로 기판, 및 전자 기기 |
US10236884B2 (en) | 2015-02-09 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Word line driver comprising NAND circuit |
US9378781B1 (en) * | 2015-04-09 | 2016-06-28 | Qualcomm Incorporated | System, apparatus, and method for sense amplifiers |
US9627034B2 (en) | 2015-05-15 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
KR102513517B1 (ko) | 2015-07-30 | 2023-03-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US10032492B2 (en) | 2016-03-18 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, driver IC, computer and electronic device |
-
2018
- 2018-06-19 DE DE112018003263.9T patent/DE112018003263T5/de active Pending
- 2018-06-19 WO PCT/IB2018/054482 patent/WO2019003045A1/ja active Application Filing
- 2018-06-19 JP JP2019526390A patent/JP7080231B2/ja active Active
- 2018-06-19 KR KR1020197037867A patent/KR102496132B1/ko active IP Right Grant
- 2018-06-19 US US16/625,826 patent/US11205461B2/en active Active
- 2018-06-19 KR KR1020237003601A patent/KR20230021180A/ko not_active Application Discontinuation
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-
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007110933A1 (ja) | 2006-03-28 | 2007-10-04 | Fujitsu Limited | 半導体メモリおよびシステム |
JP2009259379A (ja) | 2008-03-17 | 2009-11-05 | Elpida Memory Inc | 半導体装置 |
JP2011248971A (ja) | 2010-05-28 | 2011-12-08 | Elpida Memory Inc | 半導体装置 |
JP2013531860A (ja) | 2010-06-10 | 2013-08-08 | モサイド・テクノロジーズ・インコーポレーテッド | センス増幅器およびビット線分離を備える半導体メモリデバイス |
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US20230307012A1 (en) | 2023-09-28 |
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US11205461B2 (en) | 2021-12-21 |
DE112018003263T5 (de) | 2020-03-12 |
WO2019003045A1 (ja) | 2019-01-03 |
US11699465B2 (en) | 2023-07-11 |
KR20200019892A (ko) | 2020-02-25 |
KR102496132B1 (ko) | 2023-02-03 |
KR20230021180A (ko) | 2023-02-13 |
JP2023121797A (ja) | 2023-08-31 |
JP7305005B2 (ja) | 2023-07-07 |
JPWO2019003045A1 (ja) | 2020-06-11 |
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