JP7080166B2 - 半導体装置、および、半導体装置の製造方法 - Google Patents
半導体装置、および、半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 345
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 title description 11
- 239000012535 impurity Substances 0.000 claims description 230
- 239000010410 layer Substances 0.000 claims description 72
- 239000002344 surface layer Substances 0.000 claims description 58
- 230000007547 defect Effects 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 claims description 5
- 229910001385 heavy metal Inorganic materials 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 description 21
- 230000003071 parasitic effect Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
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Description
以下、本実施の形態の半導体装置、および、半導体装置の製造方法について説明する。説明の便宜上、まず、本実施の形態に関連する半導体装置の構成について説明する。
図1は、本実施の形態の半導体装置の構成を概略的に示す断面図である。
本実施の形態の半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
第1の実施の形態では、センス電位Vs1と電位Vsとをショートさせて電位Vs-センス電位Vs2を測定することによって、p型の不純物領域の内部に流れる変位電流の影響が緩和されることが説明された。本実施の形態でも、p型の不純物領域の内部に流れる電流の変位を抑制することを目的とする。
本実施の形態の半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図3は、本実施の形態の半導体装置の構成を概略的に示す断面図である。
本実施の形態の半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図4は、本実施の形態の半導体装置の構成を概略的に示す断面図である。
本実施の形態の半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図5は、本実施の形態の半導体装置の構成を概略的に示す断面図である。
本実施の形態の半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図6は、本実施の形態の半導体装置の構成を概略的に示す断面図である。
本実施の形態の半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図7は、本実施の形態の半導体装置の構成を概略的に示す平面図である。なお、当該構成の断面図は、第6の実施の形態における図6と同様である。
本実施の形態の半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図8は、本実施の形態の半導体装置の構成を概略的に示す断面図である。
本実施の形態の半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
本実施の形態の半導体装置について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図9は、本実施の形態の半導体装置の構成を概略的に示す断面図である。図9に示される構成は、絶縁ゲート型バイポーラトランジスタ(insulated gate bipolar transistor、すなわち、IGBT)である。
次に、以上に記載された実施の形態によって生じる効果の例を示す。なお、以下の説明においては、以上に記載された実施の形態に例が示された具体的な構成に基づいて当該効果が記載されるが、同様の効果が生じる範囲で、本願明細書に例が示される他の具体的な構成と置き換えられてもよい。
以上に記載された実施の形態では、それぞれの構成要素の材質、材料、寸法、形状、相対的配置関係または実施の条件などについても記載する場合があるが、これらはすべての局面においてひとつの例であって、本願明細書に記載されたものに限られることはないものとする。
Claims (12)
- 第1の導電型の半導体層と、
前記半導体層の表層に部分的に形成される第2の導電型の第1の不純物領域と、
前記半導体層の表層に部分的に形成され、かつ、前記第1の不純物領域とは離間して形成される第2の導電型の第2の不純物領域と、
前記第1の不純物領域の表層に部分的に形成される第1の導電型の第1の半導体領域と、
前記第2の不純物領域の表層に部分的に形成される第1の導電型の第2の半導体領域と、
前記第1の不純物領域の上面と前記第1の半導体領域の上面とに接触して形成される第1の電極と、
前記第2の不純物領域の上面に接触して形成される第2の電極と、
前記第2の半導体領域の上面に接触して形成される第3の電極と、
前記半導体層と前記第1の半導体領域とに挟まれる前記第1の不純物領域の上面に絶縁膜を介して設けられるゲート電極とを備え、
前記第2の不純物領域は、少なくとも前記第2の半導体領域の底部に、前記第2の不純物領域の表層における欠陥密度よりも高い欠陥密度を有する領域または重金属が拡散された領域である低ライフタイム領域を備え、
前記ゲート電極は、前記半導体層と前記第2の半導体領域とに挟まれる前記第2の不純物領域の上面にも絶縁膜を介して設けられる、
半導体装置。 - 前記第1の電極が前記第2の不純物領域と電気的に接続される、
請求項1または請求項2に記載の半導体装置。 - 前記第2の電極は、平面視において、前記第3の電極を囲んで配置される、
請求項1から請求項3のうちのいずれか1項に記載の半導体装置。 - 前記第2の不純物領域と前記第2の半導体領域と前記第2の電極と前記第3の電極とを備える構造を電圧センス構造とし、
複数の前記電圧センス構造を備える、
請求項1から請求項4のうちのいずれか1項に記載の半導体装置。 - 複数の前記電圧センス構造における前記第2の不純物領域、前記第2の半導体領域、前記第2の電極および前記第3の電極のそれぞれが、互いに線対称に配置される、
請求項5に記載の半導体装置。 - 複数の前記電圧センス構造が電気的に直列に接続される、
請求項5に記載の半導体装置。 - 前記半導体層と前記第2の半導体領域とに挟まれる前記第2の不純物領域の上面の幅は、前記半導体層と前記第1の半導体領域とに挟まれる前記第1の不純物領域の上面の幅よりも広い、
請求項1に記載の半導体装置。 - 複数の前記第2の不純物領域が形成され、
前記ゲート電極は、複数の前記第2の不純物領域に跨って形成される、
請求項1または請求項2に記載の半導体装置。 - 前記ゲート電極に印加される電圧によって半導体装置がオン状態またはオフ状態に固定された際に、前記第2の電極と前記第3の電極との間の電圧が測定される、
請求項1から請求項7のうちのいずれか1項に記載の半導体装置。 - 前記半導体層の下面に形成される第2の導電型の半導体基板と、
前記半導体基板の下面に形成される第4の電極とをさらに備える、
請求項1から請求項10のうちのいずれか1項に記載の半導体装置。 - 第1の導電型の半導体層の表層に、第2の導電型の第1の不純物領域を部分的に形成し、
前記半導体層の表層の、前記第1の不純物領域とは離間する位置に、第2の導電型の第2の不純物領域を部分的に形成し、
前記第2の不純物領域の少なくとも底部に電子線、プロトンまたはヘリウムを照射する、または、重金属を拡散させることによって、前記第2の不純物領域の表層における欠陥密度よりも高い欠陥密度を有する領域または重金属が拡散された領域である低ライフタイム領域を形成し、
前記第1の不純物領域の表層に、第1の導電型の第1の半導体領域を部分的に形成し、
前記第2の不純物領域の表層に、第1の導電型の第2の半導体領域を部分的に形成し、
前記第1の不純物領域の上面と前記第1の半導体領域の上面とに接触する第1の電極を形成し、
前記第2の不純物領域の上面に接触する第2の電極を形成し、
前記第2の半導体領域の上面に接触する第3の電極を形成し、
前記半導体層と前記第1の半導体領域とに挟まれる前記第1の不純物領域の上面に、絶縁膜を介してゲート電極を形成し、
前記ゲート電極は、前記半導体層と前記第2の半導体領域とに挟まれる前記第2の不純物領域の上面にも絶縁膜を介して設けられる、
半導体装置の製造方法。
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