JP7077188B2 - 基板処理方法、基板処理装置および複合処理装置 - Google Patents
基板処理方法、基板処理装置および複合処理装置 Download PDFInfo
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- H—ELECTRICITY
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
図1は、凍結洗浄の処理手順の一例を示す図である。洗浄処理の対象である基板200のパターンが形成される面には、異物(パーティクル)120が付着しているものとする。基板200は、インプリント処理で使用されるテンプレート、露光装置で使用されるフォトマスクまたはパターンが形成されていないブランク基板などである。また、異物220には、有機系の異物、無機系の異物が存在する。なお、以下の説明では、洗浄処理を行う際に、基板200の上を向いている面を上面といい、下を向いている面を下面という。また、基板200において、パターンが形成されている面をおもて面といい、おもて面に対向する面を裏面という。基板200のおもて面が上の状態で装置に載置されている場合には、基板200の上面はおもて面となる。また、基板200のおもて面が下の状態で装置に載置されている場合には、基板200の上面は裏面となる。図1の場合では、基板200のおもて面が上面となっている。
図9は、異物にクラックが存在する場合の凍結洗浄の様子を模式的に示す図であり、図10は、異物にボイドが存在する場合の凍結洗浄の様子を模式的に示す図である。図9(a)と図10(a)に示されるように、表面にクラック225が存在する異物220、あるいはボイド226を内部に有する異物220が付着した基板200を凍結洗浄の対象とする。ついで、図9(b)と図10(b)に示されるように、この基板200上に、処理液を供給して処理液膜210を形成する。このとき、異物220のクラック225中およびボイド226内部には処理液膜210が満たされる。
C+O2 → CO2 ・・・(1)
4H+O2 → 2H2O ・・・(2)
図19は、第3の実施形態による基板処理システムの構成の一例を模式的に示す図である。生産システムの一例である基板処理システム500は、処理部501と、操作部502と、記憶部503と、制御装置504と、を備える。
Claims (7)
- pHの異なる複数の処理液から、基板の表面のゼータ電位が負となり、かつ前記基板の第1面に付着した異物の表面のゼータ電位が正となるpHを有する処理液を選択し、
前記基板の第1面上に、前記処理液によって第1液膜を形成し、
前記第1液膜の凝固点以下となるように前記基板を冷却して、前記第1液膜の少なくとも一部が凝固した凝固層を形成し、
前記凝固層を融解する、
基板処理方法。 - 前記第1液膜の形成の前に、前記基板の前記第1面上に付着している異物にクラックまたはボイドを生じさせる請求項1に記載の基板処理方法。
- 前記第1液膜は、酸性溶液によって構成される請求項1に記載の基板処理方法。
- 前記第1液膜への気泡の注入は、前記第1液膜への超音波の印加、前記第1液膜への気体の溶解、および前記第1液膜の電気分解のうちの少なくとも1つによって行われる請求項3に記載の基板処理方法。
- 第1面を上にして基板を保持する基板保持部と、
pHの異なる複数の処理液を各々貯蔵する複数の処理液貯蔵部を含み、前記複数の処理液のいずれか1つの処理液を前記第1面上に供給する処理液供給部と、
前記第1面上に供給された前記処理液を凝固させる凝固部と、
前記複数の処理液から、前記基板の表面のゼータ電位が負となり、かつ前記第1面に付着した異物の表面のゼータ電位が正となるpHを有する処理液を選定する処理液選定部と、
を備える基板処理装置。 - 前記第1面上に供給された前記処理液に気泡を注入する気泡注入部をさらに備え、
前記気泡注入部は、前記基板上の前記処理液に超音波を印加する超音波印加装置、前記基板上の前記処理液に気体を溶解させる気体溶解装置、あるいは前記基板上の前記処理液に金属電極を浸して前記処理液を電気分解する電気分解装置のいずれかである請求項5に記載の基板処理装置。 - 基板に対して凍結洗浄処理を行う凍結洗浄ユニットと、
前記基板に対して、酸またはアルカリを用いた処理、あるいは純水を用いた処理を行う洗浄ユニットと、
前記基板の上下を反転させる基板反転ユニットと、
前記各ユニット間で前記基板の搬送を行う基板搬送部と、
を備え、
前記凍結洗浄ユニットは、pHの異なる複数の処理液を各々貯蔵する複数の処理液貯蔵部を含み、前記複数の処理液のうち、基板の表面のゼータ電位が負となり、かつ前記基板の第1面に付着した異物の表面のゼータ電位が正となるpHを有する処理液を前記基板上に供給する処理液供給部を備える、
複合処理装置。
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US16/299,934 US11185895B2 (en) | 2018-09-06 | 2019-03-12 | Substrate processing method, substrate processing apparatus, and composite processing apparatus |
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JP2008028008A (ja) | 2006-07-19 | 2008-02-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置、基板処理システムおよび基板処理方法 |
JP2009049126A (ja) | 2007-08-17 | 2009-03-05 | Dainippon Screen Mfg Co Ltd | 基板洗浄方法および基板洗浄装置 |
JP2017174966A (ja) | 2016-03-23 | 2017-09-28 | 東芝メモリ株式会社 | 基板の生産方法、基板処理装置、および基板の生産システム |
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JPH0922885A (ja) | 1995-07-07 | 1997-01-21 | Fujitsu Ltd | 化学的機械研磨後の基板洗浄方法 |
US20020142617A1 (en) * | 2001-03-27 | 2002-10-03 | Stanton Leslie G. | Method for evaluating a wafer cleaning operation |
JP2008135557A (ja) * | 2006-11-28 | 2008-06-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
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JP5666086B2 (ja) * | 2008-12-25 | 2015-02-12 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | シリコンウェハ洗浄装置 |
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JP2008028008A (ja) | 2006-07-19 | 2008-02-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置、基板処理システムおよび基板処理方法 |
JP2009049126A (ja) | 2007-08-17 | 2009-03-05 | Dainippon Screen Mfg Co Ltd | 基板洗浄方法および基板洗浄装置 |
JP2017174966A (ja) | 2016-03-23 | 2017-09-28 | 東芝メモリ株式会社 | 基板の生産方法、基板処理装置、および基板の生産システム |
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