JP7030648B2 - 半導体装置の製造方法およびエッチングガス - Google Patents
半導体装置の製造方法およびエッチングガス Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000007789 gas Substances 0.000 claims description 62
- 229910052799 carbon Inorganic materials 0.000 claims description 42
- 229910052731 fluorine Inorganic materials 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 239000011737 fluorine Substances 0.000 claims description 20
- 150000001721 carbon Chemical group 0.000 claims description 19
- 125000004432 carbon atom Chemical group C* 0.000 claims description 14
- 125000001153 fluoro group Chemical group F* 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 239000000460 chlorine Substances 0.000 claims description 11
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052794 bromium Inorganic materials 0.000 claims description 10
- 229910052801 chlorine Inorganic materials 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 9
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052756 noble gas Inorganic materials 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 4
- 239000010410 layer Substances 0.000 description 84
- 230000001681 protective effect Effects 0.000 description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 16
- 230000008021 deposition Effects 0.000 description 13
- 238000001312 dry etching Methods 0.000 description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 125000001246 bromo group Chemical group Br* 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 125000002346 iodo group Chemical group I* 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- -1 C4 F6 gas Chemical compound 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Non-Volatile Memory (AREA)
Description
図1は、第1実施形態の半導体装置の製造方法を示す断面図である。本実施形態の半導体装置は、3次元メモリである。
2c:第2絶縁膜、3:犠牲層、3’:電極層、4:絶縁層、
5:上部層、5a:カバー絶縁膜、5b:ドレイン側導電層、
5c:第1層間絶縁膜、5d:第2層間絶縁膜、6:マスク層、7:保護膜、
11:ブロック絶縁膜、12:電荷蓄積層、13:トンネル絶縁膜、
14:チャネル半導体層、15:コア絶縁膜、16:コンタクトプラグ
Claims (10)
- C3F4基(Cは炭素を表し、Fはフッ素を表す)を有し、炭素原子の個数が4個または5個である第1または第2分子を含むエッチングガスを用いて膜をエッチングすることを含み、
前記第1分子は、前記C3F4基内の炭素原子に二重結合により結合したR1基を有し、前記R1基は、炭素を含み、かつ、塩素、臭素、ヨウ素、または酸素を含み、
前記第2分子は、前記C3F4基内の炭素原子に単結合により結合したR2基と、前記C3F4基内の炭素原子に単結合により結合したR3基とを有し、前記R2基および前記R3基の少なくとも一方は、炭素を含み、かつ、前記R2基および前記R3基の各々は、水素、フッ素、塩素、臭素、ヨウ素、または酸素を含む、
半導体装置の製造方法。 - 前記R1基内のフッ素原子および炭素原子のF/C比、または前記R2およびR3基内のフッ素原子および炭素原子のF/C比は、2以下である、請求項1に記載の半導体装置の製造方法。
- 前記エッチングガスはさらに、酸素分子、希ガス分子、およびCaFb分子(a、bは1以上の整数を表す)の少なくともいずれかを含む、請求項1または2に記載の半導体装置の製造方法。
- 前記膜は、前記第1または第2分子から生成されたプラズマによりエッチングされる、請求項1から3のいずれか1項に記載の半導体装置の製造方法。
- 前記プラズマは、前記第1または第2分子から生成されたC3F4ラジカルを含む、請求項4に記載の半導体装置の製造方法。
- 前記プラズマの電子密度は、5.0×109~2.0×1011個/cm3である、請求項4または5に記載の半導体装置の製造方法。
- 前記膜は、基板上に交互に形成された複数の第1膜と複数の第2膜とを含む、請求項1から6のいずれか1項に記載の半導体装置の製造方法。
- 前記エッチングでは、アスペクト比が10以上の凹部が前記膜に形成される、請求項1から7のいずれか1項に記載の半導体装置の製造方法。
- C3F4基(Cは炭素を表し、Fはフッ素を表す)を有し、炭素原子の個数が4個または5個である第1または第2分子を含み、
前記第1分子は、前記C3F4基内の炭素原子に二重結合により結合したR1基を有し、前記R1基は、炭素を含み、かつ、塩素、臭素、ヨウ素、または酸素を含み、
前記第2分子は、前記C3F4基内の炭素原子に単結合により結合したR2基と、前記C3F4基内の炭素原子に単結合により結合したR3基とを有し、前記R2基および前記R3基の少なくとも一方は、炭素を含み、かつ、前記R2基および前記R3基の各々は、水素、フッ素、塩素、臭素、ヨウ素、または酸素を含む、
エッチングガス。 - さらに、酸素分子、希ガス分子、およびCaFb分子(a、bは1以上の整数を表す)の少なくともいずれかを含む、請求項9に記載のエッチングガス。
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JP2018150773A JP7030648B2 (ja) | 2018-08-09 | 2018-08-09 | 半導体装置の製造方法およびエッチングガス |
CN201811552535.4A CN110828308B (zh) | 2018-08-09 | 2018-12-19 | 半导体装置的制造方法及蚀刻气体 |
US16/286,241 US10804113B2 (en) | 2018-08-09 | 2019-02-26 | Manufacturing method of semiconductor device and etching gas |
US17/022,640 US11367622B2 (en) | 2018-08-09 | 2020-09-16 | Manufacturing method of semiconductor device and etching gas |
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JP2002184768A (ja) | 2000-11-27 | 2002-06-28 | Samsung Electronics Co Ltd | シリコン酸化物のエッチング用ガス組成物およびこれを用いたシリコン酸化物のエッチング方法 |
JP2006156539A (ja) | 2004-11-26 | 2006-06-15 | National Institute Of Advanced Industrial & Technology | プラズマ反応用ガス |
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JP5569353B2 (ja) | 2000-04-28 | 2014-08-13 | ダイキン工業株式会社 | ドライエッチングガスおよびドライエッチング方法 |
JP4839506B2 (ja) * | 2000-04-28 | 2011-12-21 | ダイキン工業株式会社 | ドライエッチング方法 |
JP2002359229A (ja) * | 2001-06-01 | 2002-12-13 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置の製造装置 |
JP3759895B2 (ja) | 2001-10-24 | 2006-03-29 | 松下電器産業株式会社 | エッチング方法 |
US20050103441A1 (en) * | 2001-11-14 | 2005-05-19 | Masanobu Honda | Etching method and plasma etching apparatus |
JP4804345B2 (ja) | 2004-03-31 | 2011-11-02 | 関東電化工業株式会社 | F2含有ガスの製造方法及びf2含有ガスの製造装置 |
US8318242B2 (en) * | 2008-05-05 | 2012-11-27 | International Business Machines Corporation | Systems and methods for protecting a sensitive device from corrosion |
WO2011031858A1 (en) * | 2009-09-10 | 2011-03-17 | Matheson Tri-Gas, Inc. | High aspect ratio silicon oxide etch |
WO2014070838A1 (en) * | 2012-10-30 | 2014-05-08 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Fluorocarbon molecules for high aspect ratio oxide etch |
JP6327295B2 (ja) * | 2015-08-12 | 2018-05-23 | セントラル硝子株式会社 | ドライエッチング方法 |
JP6323540B1 (ja) | 2016-11-28 | 2018-05-16 | セントラル硝子株式会社 | ドライエッチング剤組成物及びドライエッチング方法 |
JP7030648B2 (ja) * | 2018-08-09 | 2022-03-07 | キオクシア株式会社 | 半導体装置の製造方法およびエッチングガス |
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JP2002184768A (ja) | 2000-11-27 | 2002-06-28 | Samsung Electronics Co Ltd | シリコン酸化物のエッチング用ガス組成物およびこれを用いたシリコン酸化物のエッチング方法 |
JP2006156539A (ja) | 2004-11-26 | 2006-06-15 | National Institute Of Advanced Industrial & Technology | プラズマ反応用ガス |
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