JP7013735B2 - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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- JP7013735B2 JP7013735B2 JP2017170679A JP2017170679A JP7013735B2 JP 7013735 B2 JP7013735 B2 JP 7013735B2 JP 2017170679 A JP2017170679 A JP 2017170679A JP 2017170679 A JP2017170679 A JP 2017170679A JP 7013735 B2 JP7013735 B2 JP 7013735B2
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Description
本発明にかかる半導体装置は、ワイドバンドギャップ半導体を用いて構成される。実施の形態1においては、ワイドバンドギャップ半導体として例えば炭化珪素(SiC)を用いて作製された炭化珪素半導体装置について、MOSFETを例に説明する。図1は、実施の形態1にかかる炭化珪素半導体装置の構造を示す断面図である。
次に、実施の形態1にかかる炭化珪素半導体装置の製造方法について説明する。図6~図12は、実施の形態1にかかる炭化珪素半導体装置の製造途中の状態を模式的に示す断面図である。
図13は、実施の形態2にかかる炭化珪素半導体装置の図15のC-C’部分の構造を示す断面図である。また、図14は、実施の形態2にかかる炭化珪素半導体装置の図15のD-D’部分の構造を示す断面図である。実施の形態2にかかる炭化珪素半導体装置が実施の形態1にかかる炭化珪素半導体装置と異なるのは、ソース電極パッド15およびソース電極パッド15上の溝Bを埋める段差膜19とめっき膜16との間に金属膜が、設けられていることである。また、溝Bを埋める段差膜19は、はんだ17およびめっき膜16が設けられたソース電極パッド15上に設けられている。
次に、実施の形態2にかかる炭化珪素半導体装置の製造方法について説明する。まず、実施の形態1と同様に、n型炭化珪素エピタキシャル層2を形成する工程から、ソース電極パッド15および裏面電極14を形成する工程までを順に行う。
2 n型炭化珪素エピタキシャル層
2a 第1n型炭化珪素エピタキシャル層
2b 第2n型炭化珪素エピタキシャル層
3 p型炭化珪素エピタキシャル層
4 第1p+型ベース領域
4a 下部第1p+型ベース領域
4b 上部第1p+型ベース領域
5 第2p+型ベース領域
6 n型高濃度領域
6a 下部n型高濃度領域
6b 上部n型高濃度領域
7 n+型ソース領域
8 p++型コンタクト領域
9 ゲート絶縁膜
10 ゲート電極
11 層間絶縁膜
13 ソース電極
14 裏面電極
15 ソース電極パッド
16 めっき膜
17 はんだ
18 トレンチ
19 段差膜
20 金属膜
100 ゲートパッド領域
110 ソースパッド領域
120 めっき領域
Claims (11)
- 第1導電型の半導体基板と、
前記半導体基板のおもて面に設けられた、前記半導体基板より低不純物濃度の第1導電型の第1半導体層と、
前記第1半導体層の、前記半導体基板側に対して反対側の表面に選択的に設けられた第2導電型の第2半導体層と、
前記第2半導体層の、前記半導体基板側に対して反対側の表面層に選択的に設けられた第1導電型の第1半導体領域と、
前記第2半導体層の、前記半導体基板側に対して反対側にゲート絶縁膜を介して設けられたストライプ形状のゲート電極と、
前記ゲート電極を覆う層間絶縁膜と、
前記第2半導体層および前記第1半導体領域を露出するように前記層間絶縁膜に設けられたストライプ形状のコンタクトホールと、
前記コンタクトホール内に露出した前記第2半導体層と前記第1半導体領域の表面に設けられた第1電極と、
前記層間絶縁膜の少なくとも一部の上および前記コンタクトホール内の前記第1電極上に設けられた電極パッドと、
前記電極パッドの上面の、前記コンタクトホール内の前記第1電極上の位置に設けられたストライプ形状の溝と、
前記溝に交わり、前記溝を部分的に埋め込む段差膜と、
前記段差膜の、前記半導体基板側に対して反対側の表面に設けられためっき膜と、
前記めっき膜上のはんだと、
前記半導体基板の裏面に設けられた第2電極と、
を備えることを特徴とする炭化珪素半導体装置。 - 前記段差膜は、上面から見た際に六角形の形状に配置されていることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記段差膜は、高さが0.9μm以上1.1μm以下であり、幅が10μm以下であることを特徴とする請求項1または2に記載の炭化珪素半導体装置。
- 前記第1電極および前記段差膜とめっき膜との間に、金属膜がさらに設けられることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記段差膜は金属であることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記段差膜は前記めっき膜の下部にのみ設けられていることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記第2半導体層を貫通して、前記第1半導体層に達するトレンチをさらに備え、
前記ゲート電極は、前記トレンチの内部に前記ゲート絶縁膜を介して設けられていることを特徴とする請求項1~6のいずれか一つに記載の炭化珪素半導体装置。 - 第1導電型の半導体基板のおもて面に、前記半導体基板より低不純物濃度の第1導電型の第1半導体層を形成する第1工程と、
前記第1半導体層の、前記半導体基板側に対して反対側の表面に選択的に第2導電型の第2半導体層を形成する第2工程と、
前記第2半導体層の、前記半導体基板側に対して反対側の表面層に選択的に第1導電型の第1半導体領域を形成する第3工程と、
前記第2半導体層の、前記半導体基板側に対して反対側にゲート絶縁膜を介してストライプ形状のゲート電極を形成する第4工程と、
前記ゲート電極を覆う層間絶縁膜を形成する第5工程と、
前記第2半導体層および前記第1半導体領域を露出するように前記層間絶縁膜にストライプ形状のコンタクトホールを形成する第6工程と、
前記コンタクトホールに露出した前記第2半導体層と前記第1半導体領域の表面に第1電極を形成する第7工程と、
前記層間絶縁膜の少なくとも一部の上および前記コンタクトホール内の前記第1電極上に電極パッドを形成する第8工程と、
前記電極パッドの上面の、前記コンタクトホール内の前記第1電極上の位置にストライプ形状の溝を形成する第9工程と、
前記溝に交わり、前記溝を部分的に埋め込む段差膜を形成する第10工程と、
前記段差膜の、前記半導体基板側に対して反対側の表面にめっき膜を形成する第11工程と、
前記めっき膜上にはんだを形成する第12工程と、
前記半導体基板の裏面に第2電極を形成する第13工程と、
を含むことを特徴とする炭化珪素半導体装置の製造方法。 - 前記第10工程と第11工程との間に、前記第1電極および前記段差膜を覆う金属膜を形成する工程をさらに含むことを特徴とする請求項8に記載の炭化珪素半導体装置の製造方法。
- 前記段差膜の幅は、前記溝の幅よりも広いことを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記第10工程では、前記段差膜の幅を、前記溝の幅よりも広く形成することを特徴とする請求項8に記載の炭化珪素半導体装置の製造方法。
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CN106601710B (zh) * | 2015-10-19 | 2021-01-29 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
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