JP2019029501A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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Abstract
Description
本発明にかかる半導体装置は、ワイドバンドギャップ半導体を用いて構成される。実施の形態1においては、ワイドバンドギャップ半導体として例えば炭化珪素(SiC)を用いて作製された炭化珪素半導体装置について、MOSFETを例に説明する。
次に、実施の形態1にかかる炭化珪素半導体装置の製造方法について説明する。図3〜図8は、実施の形態1にかかる炭化珪素半導体装置の活性領域の製造途中の状態を模式的に示す断面図である。
図13は、実施の形態2にかかる炭化珪素半導体装置の終端構造部の構成を示す断面図である。実施の形態2にかかる炭化珪素半導体装置の活性領域は、実施の形態1と同様の構成である。終端構造部における実施の形態1との違いは、終端構造部p+型ベース領域4と横方向(トレンチ17の幅方向)で接し、トレンチ17の下方(裏面電極32側)に位置し、p型ベース層3と接しない第1JTE(Junction Termination Extension:接合終端)領域(第2導電型の第3半導体領域)6がn型炭化珪素エピタキシャル層2内に設けられている点である。第1JTE領域6は、p型ベース層3よりも低不純物濃度で設けられている。
次に、実施の形態2にかかる炭化珪素半導体装置の製造方法について説明する。実施の形態2にかかる炭化珪素半導体装置の活性領域は、実施の形態1と同様の方法で形成することができる。
図15は、実施の形態3にかかる炭化珪素半導体装置の終端構造部の構成を示す断面図である。実施の形態3にかかる炭化珪素半導体装置の活性領域は、実施の形態1と同様の構成である。終端構造部における実施の形態2との違いは、終端構造部p+型ベース領域4と横方向(トレンチ17の幅方向)で接し、p型ベース層3と上方向(層間絶縁膜23側)で接し、第1JTE領域6と下方向(裏面電極32側)で接する第2JTE領域(第2導電型の第4半導体領域)7がn型炭化珪素エピタキシャル層2の表面側に設けられている点である。第2JTE領域7は、終端構造部p+型ベース領域4よりも低不純物濃度で設けられている。
次に、実施の形態3にかかる炭化珪素半導体装置の製造方法について説明する。実施の形態3にかかる炭化珪素半導体装置の活性領域は、実施の形態1と同様の方法で形成することができる。
図17は、実施の形態4にかかる炭化珪素半導体装置の終端構造部の構成を示す断面図である。実施の形態4にかかる炭化珪素半導体装置の活性領域は、実施の形態1と同様の構成である。終端構造部における実施の形態1との違いは、トレンチ17の下方(裏面電極32側)に位置し、p型ベース層3と接しない第3JTE領域(第2導電型の第5半導体領域)8がn型炭化珪素エピタキシャル層2内に選択的に複数形成されている点である。第3JTE領域8は終端構造部p+型ベース領域4と同程度の不純物濃度であり、活性領域から離れるほど間隔が広くなっている。
次に、実施の形態4にかかる炭化珪素半導体装置の製造方法について説明する。実施の形態4にかかる炭化珪素半導体装置の活性領域は、実施の形態1と同様の方法で形成することができる。
2 n型炭化珪素エピタキシャル層
2a 第1n型炭化珪素エピタキシャル層
2b 第2n型炭化珪素エピタキシャル層
3 p型ベース層
4 終端構造部p+型ベース領域
4a 深い終端構造部p+型ベース領域
4b 浅い終端構造部p+型ベース領域
5 n+型チャネルストッパ領域
6 第1JTE領域
7 第2JTE領域
8 第3JTE領域
9 フィールド酸化膜
11 第1p+型ベース領域
11a 深い第1p+型ベース領域
11b 浅い第1p+型ベース領域
12 第2p+型ベース領域
13 濃いn型領域
13a 深い濃いn型領域
13b 浅い濃いn型領域
14 p型ベース層
15 n+型ソース領域
16 p++型コンタクト領域
17 トレンチ
18 トレンチゲート
21 ゲート絶縁膜
22 ゲート電極
23 層間絶縁膜
31 ソース電極
32 裏面電極
33 ソース電極パッド
34 ドレイン電極パッド
Claims (12)
- 電流が流れる活性領域と、前記活性領域の外側に配置され、耐圧構造が形成された終端構造部と、を有する半導体装置であって、
前記終端構造部は、
第1導電型の半導体基板のおもて面に設けられた、前記半導体基板より低不純物濃度の第1導電型の第1半導体層と、
前記第1半導体層の、前記半導体基板の反対側の表面に設けられた第2導電型の第2半導体層と、
前記第2半導体層を貫通するトレンチと、
前記第1半導体層の、前記半導体基板の反対側の表面に、前記第2半導体層に接するように前記活性領域側に設けられた前記第2半導体層より高不純物濃度の第2導電型の第1半導体領域と、
前記活性領域から最も離れた前記トレンチの外側の前記第2半導体層の表面に設けられた第1導電型の第2半導体領域と、
を備えることを特徴とする半導体装置。 - 前記第1半導体領域と横方向で接し、かつ前記トレンチの下方向に位置し、前記第2半導体層に接しないように前記第1半導体層の内部に設けられた、前記第1半導体領域よりも低不純物濃度の第2導電型の第3半導体領域を、
さらに備えることを特徴とする請求項1に記載の半導体装置。 - 前記第1半導体領域と横方向で接し、前記第2半導体層と上方向で接し、および前記第3半導体領域と下方向で接するように設けられた、前記第1半導体領域よりも低不純物濃度の第2導電型の第4半導体領域を、
さらに備えることを特徴とする請求項2に記載の半導体装置。 - 前記トレンチの下方向に位置し、前記第2半導体層に接しないように前記第1半導体層の内部に選択的に設けられた、前記第1半導体領域と同程度の不純物濃度の第2導電型の第5半導体領域を、
さらに備えることを特徴とする請求項1に記載の半導体装置。 - 前記トレンチは複数設けられており、前記活性領域から離れるに従って前記トレンチ間の間隔が狭くなっていることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記トレンチ内部は絶縁膜が埋め込まれていることを特徴とする請求項1〜5のいずれか一つに記載の半導体装置。
- 電流が流れる活性領域と、前記活性領域の外側に配置され、耐圧構造が形成された終端構造部と、を有する半導体装置の製造方法であって、
第1導電型の半導体基板のおもて面に、前記半導体基板より低不純物濃度の第1導電型の第1半導体層を形成する第1工程と、
前記第1半導体層の、前記半導体基板の反対側の表面の前記活性領域側に第2導電型の第1半導体領域を形成する第2工程と、
前記第1半導体層の、前記半導体基板の反対側の表面に第2導電型の第2半導体層を形成する第3工程と、
前記活性領域から離れた位置の前記第2半導体層の表面に第1導電型の第2半導体領域を形成する第4工程と、
前記第1半導体領域が形成されていない領域に、前記第2半導体層を貫通するトレンチを形成する第5工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記第2工程では、前記第1半導体層の内部に、前記第1半導体領域と横方向で接する、前記第1半導体領域よりも低不純物濃度の第2導電型の第3半導体領域をさらに形成することを特徴とする請求項7に記載の半導体装置の製造方法。
- 前記第2工程では、前記第1半導体層の内部に、前記第1半導体領域と横方向で接し、前記第3半導体領域と下方向で接する、前記第1半導体領域よりも低不純物濃度の第2導電型の第4半導体領域をさらに形成することを特徴とする請求項8に記載の半導体装置の製造方法。
- 前記第2工程では、前記第1半導体層の内部に選択的に、前記第1半導体領域と同程度の不純物濃度の第2導電型の第5半導体領域をさらに形成することを特徴とする請求項7に記載の半導体装置の製造方法。
- 前記第5半導体領域は、前記第1半導体領域と同一の前記第2工程で形成されることを特徴とする請求項10に記載の半導体装置の製造方法。
- 前記活性領域にトレンチゲートが形成されており、前記終端構造部のトレンチは前記トレンチゲートと同一の前記第2工程で形成されることを特徴とする請求項7〜11のいずれか一つに記載の半導体装置の製造方法。
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2009032728A (ja) * | 2007-07-24 | 2009-02-12 | Sanken Electric Co Ltd | 半導体装置 |
JP2015032664A (ja) * | 2013-08-01 | 2015-02-16 | 住友電気工業株式会社 | ワイドバンドギャップ半導体装置 |
JP2015072999A (ja) * | 2013-10-02 | 2015-04-16 | 株式会社デンソー | 炭化珪素半導体装置 |
JP2015126085A (ja) * | 2013-12-26 | 2015-07-06 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置の製造方法及び絶縁ゲート型半導体装置 |
JP2015126087A (ja) * | 2013-12-26 | 2015-07-06 | トヨタ自動車株式会社 | 半導体装置 |
WO2017064948A1 (ja) * | 2015-10-16 | 2017-04-20 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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US8653587B2 (en) * | 2012-02-13 | 2014-02-18 | Force Mos Technology Co., Ltd. | Trench MOSFET having a top side drain |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2015072999A (ja) * | 2013-10-02 | 2015-04-16 | 株式会社デンソー | 炭化珪素半導体装置 |
JP2015126085A (ja) * | 2013-12-26 | 2015-07-06 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置の製造方法及び絶縁ゲート型半導体装置 |
JP2015126087A (ja) * | 2013-12-26 | 2015-07-06 | トヨタ自動車株式会社 | 半導体装置 |
WO2017064948A1 (ja) * | 2015-10-16 | 2017-04-20 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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