JP7000971B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7000971B2 JP7000971B2 JP2018079227A JP2018079227A JP7000971B2 JP 7000971 B2 JP7000971 B2 JP 7000971B2 JP 2018079227 A JP2018079227 A JP 2018079227A JP 2018079227 A JP2018079227 A JP 2018079227A JP 7000971 B2 JP7000971 B2 JP 7000971B2
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- 239000004065 semiconductor Substances 0.000 title claims description 72
- 239000000758 substrate Substances 0.000 claims description 31
- 239000012535 impurity Substances 0.000 claims description 19
- 239000010410 layer Substances 0.000 description 100
- 238000011084 recovery Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Description
図1は、実施の形態1に係る半導体装置の領域を示す上面図である。RC-IGBTのセル領域1の外周に、耐圧保持のための終端領域2が配置されている。セル領域1と終端領域2の間又はセル領域1間に配線領域3が配置されている。この配線領域3にゲート配線4及びゲートパッド5が設けられている。また、セル領域1を含む配線領域3で囲まれた領域を、終端領域2と区別するため、活性領域と称する。
図6は、実施の形態2に係る半導体装置を示す断面図である。本実施の形態では、不純物濃度が高く、深さが深いp+ウェル層15からn+カソード層21までの距離D1を、p+ウェル層15の直下におけるn-ドリフト層7の厚みt以上にしている。このようにp+ウェル層15からn+カソード層21までの距離D1を広くすることにより、n+カソード層21からのホールの供給を抑制でき、リカバリー電流を低減できる。また、ホールが表面のp+ウェル層15から裏面のn+カソード層21に向かって拡散していく角度を45°と考えた場合、n+カソード層21からのホールの供給を抑制するには、距離D1がn-ドリフト層7の厚みt以上であればよい。
図7は、実施の形態3に係る半導体装置を示す断面図である。本実施の形態では、pベース層8より不純物濃度が高いp+エミッタ層24が、配線領域においてpベース層8の表面に設けられている。これにより、表面電極13とのコンタクト抵抗を低減でき、順方向損失を低減できる。特に、表面電極13にTi、TiN、TiWなどのバリアメタルを形成する場合に、接合表面の不純物濃度を高くすることでバリアメタルとの良好なオーミックコンタクトが得られる。
図8は、実施の形態4に係る半導体装置を示す断面図である。本実施の形態では、p+エミッタ層24が、配線領域において表面電極13と接続する部分に局所的に設けられ、ゲート配線4の下には設けられていない。このようにp+エミッタ層24を表面電極13と接合する部分にのみ形成することにより、表面電極13との良好なオーミックコンタクト性能を維持しつつ、不純物濃度が高いp+エミッタ層24の体積を削減してリカバリー電流を低減できる。
図9は、実施の形態5に係る半導体装置を示す断面図である。本実施の形態では、p+ウェル層15からn+カソード層21までの距離D1をn-ドリフト層7の厚みt以上にしている。さらに、pベース層8より不純物濃度が高いp+エミッタ層24が、配線領域においてpベース層8の表面に設けられている。これにより、実施の形態2及び3の効果を得ることができる。
図10は、実施の形態6に係る半導体装置を示す断面図である。本実施の形態では、p+ウェル層15からn+カソード層21までの距離D1をn-ドリフト層7の厚みt以上にしている。さらに、p+エミッタ層24が、配線領域において表面電極13と接続する部分に局所的に設けられ、ゲート配線4の下には設けられていない。これにより、実施の形態2及び4の効果を得ることができる。
Claims (5)
- セル領域と、前記セル領域の外周に配置された終端領域と、前記セル領域と前記終端領域の間又は前記セル領域間に配置された配線領域とを有する半導体基板と、
前記セル領域に設けられたIGBTと、
前記配線領域において前記半導体基板の上に設けられた絶縁膜と、
前記絶縁膜の上に設けられ、前記IGBTのゲートに接続されたゲート電極と、
前記終端領域において前記半導体基板の表面に設けられたpウェル層と、
一部が前記配線領域に設けられたダイオードとを備え、
前記ダイオードは、前記半導体基板の前記表面に設けられたpベース層と、前記半導体基板の裏面に設けられたnカソード層とを有し、
前記ダイオードの前記pベース層及び前記nカソード層の一部が前記配線領域において前記絶縁膜及び前記ゲート電極の下方に設けられ、
前記pベース層は、前記配線領域と前記セル領域に共通に設けられ、前記pウェル層に比べて不純物濃度が低く深さが浅いことを特徴とする半導体装置。 - 前記半導体基板において前記pベース層と前記nカソード層の間にnドリフト層が設けられ、
前記pウェル層から前記nカソード層までの距離は前記pウェル層の直下における前記nドリフト層の厚み以上であることを特徴とする請求項1に記載の半導体装置。 - 一部が前記配線領域の前記絶縁膜の下方において前記pベース層の表面に設けられ、前記pベース層より不純物濃度が高いpエミッタ層と、
前記絶縁膜の下方以外の領域で前記pベース層及び前記pエミッタ層に接続された表面電極とを更に備え、
前記pエミッタ層は前記pウェル層から離れていることを特徴とする請求項1又は2に記載の半導体装置。 - 前記pエミッタ層は前記表面電極と接続する部分に局所的に設けられていることを特徴とする請求項3に記載の半導体装置。
- 前記半導体基板はワイドバンドギャップ半導体によって設けられていることを特徴とする請求項1~4の何れか1項に記載の半導体装置。
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