JP7101593B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7101593B2 JP7101593B2 JP2018203792A JP2018203792A JP7101593B2 JP 7101593 B2 JP7101593 B2 JP 7101593B2 JP 2018203792 A JP2018203792 A JP 2018203792A JP 2018203792 A JP2018203792 A JP 2018203792A JP 7101593 B2 JP7101593 B2 JP 7101593B2
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Description
図1は、実施の形態1に係る半導体装置100である逆導通IGBTの半導体チップの平面図である。図1のように、半導体装置100は、逆導通IGBTの主電極17が形成された主電極領域101と、逆導通IGBTの制御電極であるゲートパッド18が形成されたゲートパッド領域102と、半導体装置100の終端構造(例えばガードリング等)が形成された外周領域103とを含んでいる。
図6は、実施の形態2に係る半導体装置100である逆導通IGBTの半導体チップの平面図である。図7は、実施の形態2に係る半導体装置100のセル領域(主電極領域101)におけるIGBT領域101aとダイオード領域101bとの境界部分を拡大した平面図であり、半導体基板表面の構成を示している。また、図8~図10は、実施の形態2に係る半導体装置100のセル領域の断面図であり、図8は図7のD1-D2線に沿った断面に対応し、図9は図7のE1-E2線に沿った断面に対応し、図10は図7のF1-F2線に沿った断面に対応している。なお、図6~図10において、図1~図5に示した要素と同様の機能を有する要素には同一符号を付しており、ここではそれらの詳細な説明は省略する。
図11は、実施の形態3に係る半導体装置100である逆導通IGBTの半導体チップの平面図である。図12は、実施の形態3に係る半導体装置100のセル領域(主電極領域101)におけるIGBT領域101aとダイオード領域101bとの境界部分を拡大した平面図であり、半導体基板表面の構成を示している。また、図13~図15は、実施の形態3に係る半導体装置100のセル領域の断面図であり、図13は図12のG1-G2線に沿った断面に対応し、図14は図12のH1-H2線に沿った断面に対応し、図15は図12のI1-I2線に沿った断面に対応している。なお、図11~図15において、図1~図5に示した要素と同様の機能を有する要素には同一符号を付しており、ここではそれらの詳細な説明は省略する。
図16は、実施の形態4に係る半導体装置100である逆導通IGBTの半導体チップの平面図である。図17は、実施の形態4に係る半導体装置100のセル領域(主電極領域101)におけるIGBT領域101aとダイオード領域101bとの境界部分を拡大した平面図であり、半導体基板表面の構成を示している。また、図18は、実施の形態4に係る半導体装置100のセル領域の断面図であり、図17のJ1-J2線に沿った断面に対応している。なお、図16~図18において、図1~図5に示した要素と同様の機能を有する要素には同一符号を付しており、ここではそれらの詳細な説明は省略する。
図19は、実施の形態5に係る半導体装置100である逆導通IGBTの半導体チップの平面図である。図20は、実施の形態5に係る半導体装置100のセル領域(主電極領域101)におけるIGBT領域101aとダイオード領域101bとの境界部分を拡大した平面図であり、半導体基板表面の構成を示している。また、図21は、実施の形態5に係る半導体装置100のセル領域の断面図であり、図20のK1-K2線に沿った断面に対応している。なお、図19~図21において、図1~図5に示した要素と同様の機能を有する要素には同一符号を付しており、ここではそれらの詳細な説明は省略する。
実施の形態6では、半導体装置100のダイオード領域101bにおいて、アノード層となるp+型拡散層4およびp型チャネルドープ層2の下のn-型ドリフト層1に、過剰キャリアの再結合を促進するダメージ層を設ける。
実施の形態7では、半導体装置100のダイオード領域101bに設けられた埋め込み電極16を、エミッタ電極11に接続させる。
以上の各実施の形態では、第1導電型をp型、第2導電型をn型としたが、これを逆にして、第1導電型をn型、第2導電型をp型とすることも可能である。
Claims (10)
- 半導体基板の表側の表層部に形成された第1導電型のチャネルドープ層、
前記チャネルドープ層を貫通するように前記半導体基板の表側の表面に形成されたトレンチ内に埋め込まれたゲート電極、
前記チャネルドープ層の表層部に選択的に形成され、前記チャネルドープ層よりも不純物濃度の高い第1導電型の第1拡散層、
前記チャネルドープ層の表層部に選択的に形成された第2導電型のソース層、および、
前記半導体基板の表側の表面上に形成され、前記ソース層ならびに前記第1拡散層に接続する電極、
を有するスイッチング素子と、
前記第1拡散層と前記半導体基板の裏側の表層部に形成された第2導電型の第2拡散層との間に形成されるダイオードと、
を備え、
前記チャネルドープ層の一部は、前記半導体基板の表側の表面に達して前記電極に接続しており、
前記ゲート電極はストライプ状に複数形成されており、前記半導体基板の表側の表面において、前記第1拡散層、前記ソース層および前記チャネルドープ層のそれぞれは、隣り合う2つの前記ゲート電極の両方のトレンチに接しており、前記チャネルドープ層と前記ソース層との間には前記第1拡散層が介在し、前記チャネルドープ層と前記ソース層とは隣接しない、
半導体装置。 - 前記半導体基板の表側の表面において、前記チャネルドープ層と前記ソース層との間の前記第1拡散層は、第1導電型の不純物濃度が最も高い部分である、
請求項1に記載の半導体装置。 - 前記第1拡散層は、前記ソース層よりも深く形成されており、前記ソース層と隣接する部分で前記第1拡散層が前記ソース層の下にまで延在している、
請求項1または請求項2に記載の半導体装置。 - 前記スイッチング素子は、前記半導体基板の裏側の表層部に形成された第1導電型のコレクタ層を含むIGBTである、
請求項1から請求項3のいずれか一項に記載の半導体装置。 - 前記半導体基板には、前記IGBTが形成されたIGBT領域と、前記ダイオードが形成されたダイオード領域とが、平面視で互いに区分けして配置されており、
前記チャネルドープ層の前記電極に接続する部分は、少なくともIGBT領域に形成されている、
請求項4に記載の半導体装置。 - 半導体基板の表側の表層部に形成された第1導電型のチャネルドープ層、
前記チャネルドープ層の表層部に選択的に形成され、前記チャネルドープ層よりも不純物濃度の高い第1導電型の第1拡散層、
前記チャネルドープ層の表層部に選択的に形成された第2導電型のソース層、および、
前記半導体基板の表側の表面上に形成され、前記ソース層ならびに前記第1拡散層に接続する電極、
を有するスイッチング素子と、
前記第1拡散層と前記半導体基板の裏側の表層部に形成された第2導電型の第2拡散層との間に形成されるダイオードと、
を備え、
前記チャネルドープ層の一部は、前記半導体基板の表側の表面に達して前記電極に接続しており、
前記半導体基板の表側の表面において、前記チャネルドープ層と前記ソース層との間には前記第1拡散層が介在し、前記チャネルドープ層と前記ソース層とは隣接せず、
前記スイッチング素子は、前記半導体基板の裏側の表層部に形成された第1導電型のコレクタ層を含むIGBTであり、
前記半導体基板には、前記IGBTが形成されたIGBT領域と、前記ダイオードが形成されたダイオード領域とが、平面視で互いに区分けして配置されており、
前記チャネルドープ層の前記電極に接続する部分は、少なくともIGBT領域に形成されており、
前記IGBT領域には、複数の前記IGBTのセルが格子状に区画されており、
前記IGBT領域の前記半導体基板の表側の表面において、前記チャネルドープ層の前記電極に接続する部分は、前記第1拡散層のみに隣接している、
半導体装置。 - 前記チャネルドープ層の前記電極に接続する部分は、少なくとも前記ダイオード領域に隣接する前記IGBTのセルに形成されている、
請求項5または請求項6に記載の半導体装置。 - 前記ダイオード領域においても、前記チャネルドープ層の一部は、前記半導体基板の表側の表面に達して前記電極に接続している、
請求項5から請求項7のいずれか一項に記載の半導体装置。 - 半導体基板の表側の表層部に形成された第1導電型のチャネルドープ層、
前記チャネルドープ層の表層部に選択的に形成され、前記チャネルドープ層よりも不純物濃度の高い第1導電型の第1拡散層、
前記チャネルドープ層の表層部に選択的に形成された第2導電型のソース層、および、
前記半導体基板の表側の表面上に形成され、前記ソース層ならびに前記第1拡散層に接続する電極、
を有するスイッチング素子と、
前記第1拡散層と前記半導体基板の裏側の表層部に形成された第2導電型の第2拡散層との間に形成されるダイオードと、
を備え、
前記チャネルドープ層の一部は、前記半導体基板の表側の表面に達して前記電極に接続しており、
前記半導体基板の表側の表面において、前記チャネルドープ層と前記ソース層との間には前記第1拡散層が介在し、前記チャネルドープ層と前記ソース層とは隣接せず、
前記スイッチング素子は、前記半導体基板の裏側の表層部に形成された第1導電型のコレクタ層を含むIGBTであり、
前記半導体基板には、前記IGBTが形成されたIGBT領域と、前記ダイオードが形成されたダイオード領域とが、平面視で互いに区分けして配置されており、
前記チャネルドープ層の前記電極に接続する部分は、少なくともIGBT領域に形成されており、
前記ダイオード領域においても、前記チャネルドープ層の一部は、前記半導体基板の表側の表面に達して前記電極に接続しており、
前記ダイオード領域において、前記チャネルドープ層の前記電極に接続する部分の面積比率は、前記IGBT領域に近い領域ほど高い、
半導体装置。 - 前記IGBT領域および前記ダイオード領域の前記チャネルドープ層の下に形成された第2導電型のドリフト層と、
前記ダイオード領域の前記ドリフト層に形成されたダメージ層と、
をさらに備える、
請求項5から請求項9のいずれか一項に記載の半導体装置。
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