JP6952595B2 - 縦型熱処理装置 - Google Patents
縦型熱処理装置 Download PDFInfo
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- JP6952595B2 JP6952595B2 JP2017244120A JP2017244120A JP6952595B2 JP 6952595 B2 JP6952595 B2 JP 6952595B2 JP 2017244120 A JP2017244120 A JP 2017244120A JP 2017244120 A JP2017244120 A JP 2017244120A JP 6952595 B2 JP6952595 B2 JP 6952595B2
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- F27D7/02—Supplying steam, vapour, gases, or liquids
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/02107—Forming insulating materials on a substrate
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Description
本発明の実施形態に係る縦型熱処理装置について説明する。図1は、本発明の実施形態に係る縦型熱処理装置の一例を示す断面図である。図2は、図1における一点鎖線A−Aにおいて切断した断面図である。
次に、前述した縦型熱処理装置1に用いられるガスノズル76,78,80の構成について、ガスノズル76を例に挙げて説明する。但し、ガスノズル78及びガスノズル80についてもガスノズル76と同様の構成としてもよい。例えば、反応ガスを供給するガスノズル78について原料ガスを供給するガスノズル76と同様の構成を採用することで、成膜処理の際、内管44の外面や外管46の内面には、内管44の内面に成膜される膜と同一組成の膜が成膜される。そのため、処理容器34内のドライクリーニング時に内管44の外面や外管46の内面に膜残りが発生することを防止できる。また、内管44の外面や外管46の内面に成膜される膜と内管44の内面に成膜される膜との間の応力(ストレス)の差が小さくなるので、膜剥がれが生じることを抑制できる。
図3は、図1の縦型熱処理装置1のガスノズル76の第1構成例を示す斜視図である。図4は、図1における一点鎖線B−Bにおいて切断した断面図である。なお、図3においては、ガスノズル78及びガスノズル80の図示を省略している。
図5は、図1の縦型熱処理装置1のガスノズル76の第2構成例を示す斜視図である。なお、図5においては、ガスノズル78及びガスノズル80の図示を省略している。
図6は、図1の縦型熱処理装置1のガスノズル76の第3構成例を示す斜視図である。なお、図6においては、ガスノズル78及びガスノズル80の図示を省略している。
図7は、図1の縦型熱処理装置1のガスノズル76の第4構成例を示す斜視図である。なお、図7においては、ガスノズル78及びガスノズル80の図示を省略している。
次に、本発明の実施形態に係る縦型熱処理装置1を用いた成膜方法について、原子層堆積(ALD:Atomic Layer Deposition)法によりウエハW上にシリコン窒化膜を形成する場合を例に挙げて説明する。なお、以下の説明において、縦型熱処理装置1の各部の動作は、制御手段110により制御される。
次に、本発明の実施形態に係る縦型熱処理装置1を用いて原料ガスを供給する場合の効果について説明する。
実施例1では、ガスノズルB,Cを用いてウエハW上にシリコン窒化膜を形成したときの基板保持具38に保持されたウエハWの位置(以下「ウエハ処理位置」という。)とウエハWに形成されたシリコン窒化膜の膜厚との関係を評価した。図10は、ウエハ処理位置とウエハに形成された膜の膜厚との関係を示す図である。図10中、横軸はウエハ処理位置を示し、左側の縦軸(第1軸)はウエハWの面内における平均膜厚を示し、右側の縦軸(第2軸)はウエハWの面内における膜厚均一性を示す。なお、図10の第2軸では、中央値がウエハWの面内における膜厚均一性が最も良好(膜厚の面内分布が0%)であることを示し、中央値から大きく又は小さくなるほどウエハWの面内における膜厚均一性が悪化することを示す。より具体的には、中央値から大きくなるほどウエハWの中央部の膜厚が周縁部の膜厚よりも厚い凸型の分布であることを示し、中央値から小さくなるほどウエハWの中央部の膜厚が周縁部の膜厚よりも薄い凹型の分布であることを示す。
実施例2では、ガスノズルA,B,Cを用いてウエハW上に厚さが3μmのシリコン窒化膜を形成したときのガスノズルA,B,Cの内壁に付着した分解物(生成物)の厚さをシミュレーションにより算出した。図11は、ガスノズルの内壁に付着する分解物のシミュレーション結果を示す図である。
実施例3では、ガスノズルA,B,Cを用いて処理容器34内に原料ガスであるHCDガスを供給したときの各ガス孔でのガス流速をシミュレーションにより算出した。図12は、ガス孔の位置とガス流速との関係のシミュレーション結果を示す図である。図12中、横軸はガス孔の位置を示し、縦軸はガス流速(sccm)を示す。なお、シミュレーションの条件は以下の通りである。
温度:630℃
HCDガスの流速:300sccm
内管44内の圧力:133Pa
34 処理容器
38 基板保持具
44 内管
44A 天井部
44B 側壁部
46 外管
76 ガスノズル
76A ガス孔
76B ガス孔
82 排気口
84 空間部
W ウエハ
Claims (10)
- 基板保持具に複数の基板を上下方向に所定間隔を有して略水平に保持した状態で、前記複数の基板に原料ガスを供給して膜を形成する縦型熱処理装置であって、
前記基板保持具を収容する内管と、前記内管の外側に配置される外管と、を含む処理容器と、
前記内管の内周面に沿って上下に延びて設けられ、先端が前記内管の内部から外部に貫通するガスノズルと、
を有し、
前記ガスノズルには、前記内管の内部に前記原料ガスを供給する第1のガス孔と、前記内管の外部に前記原料ガスを供給する第2のガス孔と、が形成されている、
縦型熱処理装置。 - 前記第1のガス孔は、前記内管の内部の位置に形成され、
前記第2のガス孔は、前記内管の外部の位置に形成されている、
請求項1に記載の縦型熱処理装置。 - 前記ガスノズルの前記先端は、前記内管の天井部において前記内管の内部から外部に貫通する、
請求項1又は2に記載の縦型熱処理装置。 - 前記ガスノズルの前記先端は、L字状に屈曲し、前記内管の側壁部において前記内管の内部から外部に貫通する、
請求項1又は2に記載の縦型熱処理装置。 - ノズル単位長さあたりの前記第2のガス孔の開口面積は、ノズル単位長さあたりの前記第1のガス孔の開口面積よりも大きい、
請求項1乃至4のいずれか一項に記載の縦型熱処理装置。 - 前記内管と前記外管との間の空間部と連通する排気口を有し、
前記第2のガス孔は、前記ガスノズルの管壁における前記排気口の側に形成される、
請求項1乃至5のいずれか一項に記載の縦型熱処理装置。 - 前記原料ガスは、シリコン含有ガス又は金属含有ガスを含む、
請求項1乃至6のいずれか一項に記載の縦型熱処理装置。 - 基板保持具に複数の基板を上下方向に所定間隔を有して略水平に保持した状態で、前記複数の基板に処理ガスを供給して膜を形成する縦型熱処理装置であって、
前記基板保持具を収容する内管と、前記内管の外側に配置される外管と、を含む処理容器と、
前記内管の内周面に沿って上下に延びて設けられ、先端が前記内管の内部から外部に貫通する複数のガスノズルと、
を有し、
前記複数のガスノズルの各々には、前記内管の内部に処理ガスを供給する第1のガス孔と、前記内管の外部に前記処理ガスを供給する第2のガス孔と、が形成されている、
縦型熱処理装置。 - 前記複数のガスノズルは、原料ガスを供給する第1のガスノズルと、前記原料ガスと反応する反応ガスを供給する第2のガスノズルと、を含む、
請求項8に記載の縦型熱処理装置。 - 前記原料ガスは、シリコン含有ガス又は金属含有ガスを含み、
前記反応ガスは、窒化ガス又は酸化ガスを含む、
請求項9に記載の縦型熱処理装置。
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