JP6929254B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 109
- 229910052751 metal Inorganic materials 0.000 claims description 81
- 239000002184 metal Substances 0.000 claims description 81
- 239000010410 layer Substances 0.000 claims description 38
- 239000011229 interlayer Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 11
- 150000002736 metal compounds Chemical class 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 4
- 230000006378 damage Effects 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910000531 Co alloy Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910003296 Ni-Mo Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910009043 WC-Co Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
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- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- Electrodes Of Semiconductors (AREA)
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Description
1.1 電力用半導体装置
図1は、実施の形態1の電力用半導体装置の断面を模式的に図示する断面図である。
図2は、比較例の電力用半導体装置の断面を模式的に図示する断面図である。
図3は、実施の形態2の電力用半導体装置の断面を模式的に図示する断面図である。図4は、実施の形態2の電力用半導体装置の、図3の切断線A−Aにより示される位置における断面を模式的に図示する部分断面図である。
図5は、実施の形態3の電力用半導体装置の断面を模式的に図示する断面図である。
実施の形態1、2及び3の電力用半導体装置100、200及び300は、トレンチIGBTである。しかし、上述した技術は、トレンチIGBT以外の、複数のセル領域148を備える縦型の電力用半導体装置においても採用しうる。例えば、上述した技術は、金属酸化物半導体電界効果トランジスタ(MOSFET)においても採用しうる。上述した技術がMOSFETにおいて採用される場合は、第1の主電極は、ソース電極であり、第2の主電極は、ドレイン電極である。
Claims (4)
- 第1の主面、及び前記第1の主面が配置される側と反対の側に配置される第2の主面を有する半導体基板と、
前記第1の主面上に配置される複数のセル領域と、
前記複数のセル領域上に配置される第1の主電極と、
前記第2の主面上に配置される第2の主電極と、
を備え、
前記複数のセル領域の各々は、
前記第1の主電極に接続される半導体層と、
制御電極と、
前記制御電極を覆い、前記第1の主電極から前記制御電極を電気的に絶縁し、前記半導体層との間に段差を形成する層間絶縁膜と、
を備え、
前記第1の主電極は、
前記複数のセル領域上に配置され、95重量%以上のAl濃度を有する金属からなる第1の金属膜と、
前記第1の金属膜上に配置され、長周期型の周期表における4A,5A及び6A族元素からなる群より選択される少なくとも1種の元素と、C及びNからなる群より選択される少なくとも1種の元素と、の金属化合物からなる主成分相、並びに鉄族元素からなり前記主成分相を互いに結合する副成分相を含む中間膜と、
前記中間膜上に配置され、95重量%以上のAl濃度を有する金属からなる第2の金属膜と、
を備え、
前記中間膜は、前記第2の金属膜の硬度より高い硬度を有する
電力用半導体装置。 - 前記第1の主電極は、
前記第1の金属膜と前記複数のセル領域との間に配置され、長周期型の周期表における4A,5A及び6A族元素からなる群より選択される少なくとも1種の元素と、C及びNからなる群より選択される少なくとも1種の元素と、の金属化合物からなる主成分相、並びに鉄族元素からなり前記主成分相を互いに結合する副成分相を含むバリアメタル
をさらに備える
請求項1の電力用半導体装置。 - 前記中間膜は、メッシュ状の平面形状を有する
請求項1又は2の電力用半導体装置。 - 前記第1の金属膜は、前記中間膜が配置される側に配置される主面を有し、
前記主面は、平坦である
請求項1から3までのいずれかの電力用半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2018155920A JP6929254B2 (ja) | 2018-08-23 | 2018-08-23 | 電力用半導体装置 |
US16/444,775 US10971591B2 (en) | 2018-08-23 | 2019-06-18 | Power semiconductor device |
DE102019211754.6A DE102019211754B4 (de) | 2018-08-23 | 2019-08-06 | Leistungs-Halbleitervorrichtung |
CN201910759483.6A CN110858610B (zh) | 2018-08-23 | 2019-08-16 | 电力用半导体装置 |
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JP2018155920A JP6929254B2 (ja) | 2018-08-23 | 2018-08-23 | 電力用半導体装置 |
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JP2020031142A JP2020031142A (ja) | 2020-02-27 |
JP6929254B2 true JP6929254B2 (ja) | 2021-09-01 |
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US (1) | US10971591B2 (ja) |
JP (1) | JP6929254B2 (ja) |
CN (1) | CN110858610B (ja) |
DE (1) | DE102019211754B4 (ja) |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63148646A (ja) * | 1986-12-12 | 1988-06-21 | Toshiba Corp | 半導体装置 |
JP4085536B2 (ja) * | 1998-11-09 | 2008-05-14 | 株式会社日本自動車部品総合研究所 | 電気機器およびその製造方法並びに圧接型半導体装置 |
US6960836B2 (en) * | 2003-09-30 | 2005-11-01 | Agere Systems, Inc. | Reinforced bond pad |
US20100193835A1 (en) | 2009-02-05 | 2010-08-05 | Force-Mos Technology Corporation | Trench insulated gate bipolar transistor (GBT) with improved emitter-base contacts and metal schemes |
JP2011249491A (ja) | 2010-05-26 | 2011-12-08 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP6112698B2 (ja) | 2012-03-30 | 2017-04-12 | 富士電機株式会社 | 炭化珪素半導体素子及びその製造方法 |
CN103296037B (zh) * | 2012-07-12 | 2016-06-15 | 上海天马微电子有限公司 | 接触垫、平板图像探测器及其制作方法 |
US9318624B2 (en) * | 2012-11-27 | 2016-04-19 | Cree, Inc. | Schottky structure employing central implants between junction barrier elements |
JP2017118060A (ja) | 2015-12-25 | 2017-06-29 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
DE102018101392A1 (de) | 2017-01-24 | 2018-07-26 | Toyota Jidosha Kabushiki Kaisha | Halbleitereinrichtung und verfahren zum herstellen derselben |
JP6897141B2 (ja) * | 2017-02-15 | 2021-06-30 | 株式会社デンソー | 半導体装置とその製造方法 |
KR102434174B1 (ko) * | 2017-11-22 | 2022-08-19 | 에스케이하이닉스 주식회사 | 홀 내에 국한된 선택 소자 패턴를 갖는 반도체 메모리 장치 |
DE102018114591B4 (de) * | 2018-06-18 | 2021-09-02 | Infineon Technologies Ag | Transistorbauelement |
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- 2019-06-18 US US16/444,775 patent/US10971591B2/en active Active
- 2019-08-06 DE DE102019211754.6A patent/DE102019211754B4/de active Active
- 2019-08-16 CN CN201910759483.6A patent/CN110858610B/zh active Active
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DE102019211754B4 (de) | 2024-08-01 |
CN110858610B (zh) | 2023-09-08 |
CN110858610A (zh) | 2020-03-03 |
US10971591B2 (en) | 2021-04-06 |
DE102019211754A1 (de) | 2020-02-27 |
US20200066860A1 (en) | 2020-02-27 |
JP2020031142A (ja) | 2020-02-27 |
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