JP6885533B2 - バルク弾性波共振器の製造方法 - Google Patents
バルク弾性波共振器の製造方法 Download PDFInfo
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- JP6885533B2 JP6885533B2 JP2017013227A JP2017013227A JP6885533B2 JP 6885533 B2 JP6885533 B2 JP 6885533B2 JP 2017013227 A JP2017013227 A JP 2017013227A JP 2017013227 A JP2017013227 A JP 2017013227A JP 6885533 B2 JP6885533 B2 JP 6885533B2
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- film
- elastic wave
- resonance frequency
- wave resonator
- bulk elastic
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 20
- 239000010408 film Substances 0.000 description 307
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
- 239000000758 substrate Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 238000009826 distribution Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000010030 laminating Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- -1 silicon oxide nitride Chemical class 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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Description
Claims (1)
- 圧電膜と、該圧電膜を挟む上部電極膜および下部電極膜と、前記圧電膜と逆符号の温度係数を持つ温度補償膜とを含む多層膜とが積層したバルク弾性波共振器の製造方法において、
前記下部電極膜と前記圧電膜と前記上部電極膜とを、前記バルク弾性波共振器の共振周波数の波長の1/2の整数倍の厚さとなるように形成する工程と、
前記上部電極膜上に前記温度補償膜として、選択除去可能な少なくとも2種類の第1の温度補償膜と第2の温度補償膜を交互に積層し、表面を前記第1の温度補償膜とする多層構造の膜であって、前記共振周波数の波長の1/2の整数倍より厚い膜を形成する工程と、
前記多層構造の温度補償膜のうち、表面に形成された前記第1の温度補償膜を選択エッチングし、前記バルク弾性波共振器の共振周波数が所定の値に達していない場合は、前記多層構造の温度補償膜の表面となった前記第2の温度補償膜を選択エッチングし、前記バルク弾性波共振器の共振周波数が前記所定の値となるまで前記第1の温度補償膜の選択エッチングと前記第2の温度補償膜の選択エッチングを繰り返すことで、前記多層構造の温度補償膜の厚さを前記バルク弾性波共振器の共振周波数の波長の1/2の整数倍とし、前記バルク弾性波共振器の共振周波数を所定の値に調整する工程と、を含むことを特徴とするバルク弾性波共振器の製造方法。
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JP2018121291A JP2018121291A (ja) | 2018-08-02 |
JP6885533B2 true JP6885533B2 (ja) | 2021-06-16 |
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Families Citing this family (2)
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JP7208828B2 (ja) * | 2019-02-28 | 2023-01-19 | 太陽誘電株式会社 | フィルタおよびマルチプレクサ |
TWI784331B (zh) * | 2020-10-22 | 2022-11-21 | 台灣奈米碳素股份有限公司 | 製造具特定共振頻率之薄膜體聲波共振裝置的方法 |
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JP3889351B2 (ja) * | 2002-12-11 | 2007-03-07 | Tdk株式会社 | デュプレクサ |
JP2005176333A (ja) * | 2003-11-18 | 2005-06-30 | Matsushita Electric Ind Co Ltd | 音響共振器装置、フィルタ装置、音響共振器装置の製造方法および通信機器 |
JP2005311849A (ja) * | 2004-04-23 | 2005-11-04 | Seiko Epson Corp | 圧電薄膜共振子、フィルタ及び圧電薄膜共振子の製造方法 |
US7561009B2 (en) * | 2005-11-30 | 2009-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with temperature compensation |
JP4836748B2 (ja) * | 2006-10-27 | 2011-12-14 | 京セラ株式会社 | バルク音響波共振子及びフィルタ装置並びに通信装置 |
JP4978210B2 (ja) * | 2007-01-25 | 2012-07-18 | セイコーエプソン株式会社 | バルク音響振動子の製造方法 |
CN102904546B (zh) * | 2012-08-30 | 2016-04-13 | 中兴通讯股份有限公司 | 一种温度补偿能力可调节的压电声波谐振器 |
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