JP6892061B2 - バルク弾性波共振器の製造方法 - Google Patents
バルク弾性波共振器の製造方法 Download PDFInfo
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- JP6892061B2 JP6892061B2 JP2017013228A JP2017013228A JP6892061B2 JP 6892061 B2 JP6892061 B2 JP 6892061B2 JP 2017013228 A JP2017013228 A JP 2017013228A JP 2017013228 A JP2017013228 A JP 2017013228A JP 6892061 B2 JP6892061 B2 JP 6892061B2
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- film
- silicon nitride
- elastic wave
- manufacturing
- nitride film
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 81
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- -1 scandium aluminum Chemical compound 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
Claims (1)
- バルク弾性波共振器の製造方法であって、
支持基板を用意する工程と、
前記バルク弾性波共振器のキャビティ部形成予定領域の前記支持基板表面を被覆するように、シリコン窒化膜をパターニングする工程と、
パターニングされた前記シリコン窒化膜表面および前記支持基板表面を前記シリコン窒化膜と選択除去可能な絶縁膜で被覆した後、平坦化し、前記シリコン窒化膜表面を露出させる工程と、
該平坦化されたシリコン窒化膜および前記絶縁膜表面に、下部電極膜、圧電膜および上部電極膜を積層形成する工程と、
前記キャビティ部形成予定領域の前記上部電極膜、前記圧電膜および前記下部電極膜の一部を除去して開口部を形成し、該開口部の底面に前記シリコン窒化膜表面の一部を露出させる工程と、
前記開口部を通して、前記シリコン窒化膜をエッチング除去し、キャビティ部を形成する工程と、を含むことを特徴とするバルク弾性波共振器の製造方法。
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JP2017013228A JP6892061B2 (ja) | 2017-01-27 | 2017-01-27 | バルク弾性波共振器の製造方法 |
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JP2017013228A JP6892061B2 (ja) | 2017-01-27 | 2017-01-27 | バルク弾性波共振器の製造方法 |
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JP2018121292A JP2018121292A (ja) | 2018-08-02 |
JP6892061B2 true JP6892061B2 (ja) | 2021-06-18 |
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Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4707574B2 (ja) * | 2006-02-02 | 2011-06-22 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびその製造方法 |
JP5270412B2 (ja) * | 2008-03-24 | 2013-08-21 | 日本碍子株式会社 | バルク弾性波装置の製造方法 |
JP5184179B2 (ja) * | 2008-03-28 | 2013-04-17 | 京セラ株式会社 | 薄膜共振子、フィルタおよびデュプレクサ |
CN102668376B (zh) * | 2009-11-26 | 2017-08-25 | 株式会社村田制作所 | 压电设备以及压电设备的制造方法 |
WO2011099381A1 (ja) * | 2010-02-09 | 2011-08-18 | 株式会社村田製作所 | 圧電デバイス、圧電デバイスの製造方法 |
JP5839103B2 (ja) * | 2012-02-20 | 2016-01-06 | 株式会社村田製作所 | 圧電バルク弾性波素子の製造方法及び圧電バルク弾性波素子 |
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