JP6881413B2 - 磁気センサ - Google Patents
磁気センサ Download PDFInfo
- Publication number
- JP6881413B2 JP6881413B2 JP2018194060A JP2018194060A JP6881413B2 JP 6881413 B2 JP6881413 B2 JP 6881413B2 JP 2018194060 A JP2018194060 A JP 2018194060A JP 2018194060 A JP2018194060 A JP 2018194060A JP 6881413 B2 JP6881413 B2 JP 6881413B2
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- Japan
- Prior art keywords
- layer
- magnetic sensor
- magnetic field
- pinned
- reference layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0094—Sensor arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Thin Magnetic Films (AREA)
Description
11 第1の磁気抵抗効果素子
12 第2の磁気抵抗効果素子
13 第3の磁気抵抗効果素子
14 第4の磁気抵抗効果素子
21 反強磁性層
22 ピンド層
23 非磁性中間層
24 レファレンス層
25 スペーサ層
26 フリー層
λP ピンド層の磁歪定数
λR レファレンス層の磁歪定数
Claims (5)
- 外部磁場に応じて磁化方向が変化するフリー層と、外部磁場に対して磁化方向が固定されたレファレンス層と、前記フリー層と前記レファレンス層との間に位置し、磁気抵抗効果を奏するスペーサ層と、前記スペーサ層との間で前記レファレンス層を挟み、前記レファレンス層と反強磁性結合するピンド層と、を有し、
前記レファレンス層の磁歪定数λRと前記ピンド層の磁歪定数λPとの間に
−2.5≦λP/λR≦0.5(但し、0を除く)
の関係があり、
前記レファレンス層と前記ピンド層の少なくともいずれかは正の磁歪定数を有する層であり、前記正の磁歪定数を有する層は少なくとも一つのCoFe層と少なくとも一つのCoFeX層(XはB,Ni,Si,Ta,Ti,Hf,V,Zr,W,Mnからなるグループから選択された1以上の元素)とを含む積層構造からなる、磁気センサ。 - 前記レファレンス層と前記ピンド層の少なくともいずれかは負の磁歪定数を有する層であり、前記負の磁歪定数を有する層はNi層,Co層、CoNi層またはNiFe層からなる、請求項1に記載の磁気センサ。
- 前記レファレンス層と前記ピンド層の少なくともいずれかは負の磁歪定数を有する層であり、前記負の磁歪定数を有する層は少なくとも一つのNi層と少なくとも一つのCo層と少なくとも一つのCoNi層と少なくとも一つのNiFeのいずれか2以上を含む積層構造からなる、請求項1に記載の磁気センサ。
- 前記負の磁歪定数を有する層は前記Ni層を含む、請求項2または3に記載の磁気センサ。
- -0.9≦λP/λR≦−1.1である、請求項1から4のいずれか1項に記載の磁気センサ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018194060A JP6881413B2 (ja) | 2018-10-15 | 2018-10-15 | 磁気センサ |
US16/562,521 US20200116804A1 (en) | 2018-10-15 | 2019-09-06 | Magnetic sensor |
DE102019126787.0A DE102019126787A1 (de) | 2018-10-15 | 2019-10-04 | Magnetsensor |
CN201910977680.5A CN111044950A (zh) | 2018-10-15 | 2019-10-15 | 磁传感器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018194060A JP6881413B2 (ja) | 2018-10-15 | 2018-10-15 | 磁気センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020064892A JP2020064892A (ja) | 2020-04-23 |
JP6881413B2 true JP6881413B2 (ja) | 2021-06-02 |
Family
ID=69954478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018194060A Active JP6881413B2 (ja) | 2018-10-15 | 2018-10-15 | 磁気センサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US20200116804A1 (ja) |
JP (1) | JP6881413B2 (ja) |
CN (1) | CN111044950A (ja) |
DE (1) | DE102019126787A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113466759B (zh) * | 2021-06-30 | 2023-06-13 | 山东大学 | 单、双轴磁阻磁场传感器和制作方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6473279B2 (en) * | 2001-01-04 | 2002-10-29 | International Business Machines Corporation | In-stack single-domain stabilization of free layers for CIP and CPP spin-valve or tunnel-valve read heads |
JP2005109201A (ja) * | 2003-09-30 | 2005-04-21 | Fujitsu Ltd | 強磁性トンネル接合素子、磁気メモリセル及び磁気ヘッド |
JP2006202784A (ja) * | 2005-01-17 | 2006-08-03 | Tdk Corp | 磁気抵抗効果膜、並びに、ピンド層の磁化制御方法 |
US7411765B2 (en) * | 2005-07-18 | 2008-08-12 | Hitachi Global Storage Technologies Netherlands B.V. | CPP-GMR sensor with non-orthogonal free and reference layer magnetization orientation |
US7423847B2 (en) * | 2005-11-03 | 2008-09-09 | Hitachi Global Storage Technologies Netherlands B.V. | Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edge |
JP4673274B2 (ja) * | 2006-09-11 | 2011-04-20 | ヒタチグローバルストレージテクノロジーズネザーランドビーブイ | 外部ストレス耐性の高い磁気抵抗効果型ヘッド |
US7965077B2 (en) * | 2008-05-08 | 2011-06-21 | Everspin Technologies, Inc. | Two-axis magnetic field sensor with multiple pinning directions |
US8259420B2 (en) * | 2010-02-01 | 2012-09-04 | Headway Technologies, Inc. | TMR device with novel free layer structure |
US8953285B2 (en) * | 2010-05-05 | 2015-02-10 | Headway Technologies, Inc. | Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer |
-
2018
- 2018-10-15 JP JP2018194060A patent/JP6881413B2/ja active Active
-
2019
- 2019-09-06 US US16/562,521 patent/US20200116804A1/en not_active Abandoned
- 2019-10-04 DE DE102019126787.0A patent/DE102019126787A1/de not_active Ceased
- 2019-10-15 CN CN201910977680.5A patent/CN111044950A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20200116804A1 (en) | 2020-04-16 |
JP2020064892A (ja) | 2020-04-23 |
DE102019126787A1 (de) | 2020-04-16 |
CN111044950A (zh) | 2020-04-21 |
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