JP6871384B2 - 半導体装置の製造方法、基板処理装置及びプログラム - Google Patents
半導体装置の製造方法、基板処理装置及びプログラム Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 235
- 238000012545 processing Methods 0.000 title claims description 115
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000012546 transfer Methods 0.000 claims description 155
- 238000001514 detection method Methods 0.000 claims description 85
- 230000005856 abnormality Effects 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 58
- 238000006243 chemical reaction Methods 0.000 claims description 31
- 238000001816 cooling Methods 0.000 claims 3
- 235000012431 wafers Nutrition 0.000 description 279
- 238000003860 storage Methods 0.000 description 17
- 238000005336 cracking Methods 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 230000002159 abnormal effect Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000013404 process transfer Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
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- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
-
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67769—Storage means
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Description
Claims (16)
- 複数枚の基板が載置された状態の基板保持具を反応管内に搬入する工程と、前記反応管内にガスを供給して前記基板を処理する工程と、前記基板を処理した後、前記基板保持具を前記反応管から搬出する工程と、前記基板を移載可能な位置を基準に前記基板保持具を所定角度回転させた状態で前記基板保持具に載置された前記基板を検知する工程と、を有する半導体装置の製造方法。
- 更に、前記基板保持具を第2所定角度回転させて、前記基板保持具に載置された前記基板の割れを検知する工程を有する請求項1記載の半導体装置の製造方法。
- 更に、前記基板保持具を前記所定角度逆回転させて、前記基板保持具に載置された前記基板の割れを検知する工程を有する請求項1記載の半導体装置の製造方法。
- 更に、前記基板保持具に保持された前記基板及び前記基板保持具が配置された移載室を冷却する冷却工程を有し、前記冷却工程後、前記基板保持具を所定角度回転させるよう構成されている請求項1記載の半導体装置の製造方法。
- 更に、前記複数の基板を前記基板保持具に移載する工程を有し、前記移載する工程後であって前記搬入する工程の前に、前記基板保持具を所定角度回転させるよう構成されている請求項1記載の半導体装置の製造方法。
- 更に、複数枚の基板を基板保持体に載置して、前記基板保持体を介して前記基板を前記基板保持具に移載する移載工程を有し、前記移載工程の前に、前記基板保持体に異常が発生すると、前記異常が解消されるまで前記基板を移載しないよう構成されている請求項1記載の半導体装置の製造方法。
- 前記移載工程では、初期位置から前記基板保持体から前記基板を前記基板保持具に装填する装填位置まで移動して、予め指定された距離を戻ったところで一旦停止するよう構成されている請求項6記載の半導体装置の製造方法。
- 複数枚の基板が載置された状態の基板保持具を反応管内に搬入する工程と、前記反応管内にガスを供給して前記基板を処理する工程と、前記基板を処理した後、前記基板保持具を前記反応管から搬出する工程と、前記基板保持具を搬入する工程前に、前記基板を移載可能な位置を基準に前記基板保持具を所定角度回転させた状態で前記基板保持具に載置された前記基板を検知する工程と、を有する半導体装置の製造方法。
- 複数枚の基板が載置された状態の基板保持具を反応管内に搬入する工程と、前記反応管内にガスを供給して前記基板を処理する工程と、前記基板を処理した後、前記基板保持具を前記反応管から搬出する工程と、前記基板を移載可能な位置を基準に前記基板保持具を所定角度回転させた状態で前記基板保持具に載置された前記基板を検知する第1工程と、前記基板の移載可能な位置で前記基板保持具に載置された前記基板を検知する第2工程と、を有する半導体装置の製造方法。
- 前記搬出する工程後、前記第2工程よりも前記第1工程を優先して実施するよう構成されている請求項9記載の半導体装置の製造方法。
- 複数の基板を保持する基板保持具を回転させる回転機構と、前記基板を保持する基板保持体を有する移載機構と、前記移載機構と前記基板保持具との間で前記基板の搬送を制御する搬送制御部と、前記基板保持具に保持された基板の移載状態を検知する異常検出装置と、を備えた基板処理装置において実行されるプログラムであって、複数枚の基板が載置された状態の基板保持具を反応管内に搬入する手順と、前記反応管内にガスを供給して前記基板を処理する手順と、前記基板を処理した後、前記基板保持具を前記反応管から搬出する手順と、前記基板を移載可能な位置を基準に前記基板保持具を所定角度回転させた状態で前記基板保持具に載置された前記基板を検知する手順と、をコンピュータにより前記基板処理装置に実行させるプログラム。
- 複数の基板を保持する基板保持具を回転させる回転機構と、前記基板を保持する基板保持体を有する移載機構と、前記移載機構と前記基板保持具との間で前記基板の搬送を制御する搬送制御部と、前記基板保持具に保持された基板の移載状態を検知する異常検出装置と、前記基板が載置された状態の基板保持具を反応管内に搬入させ、前記反応管内にガスを供給して前記基板を処理させ、前記基板を処理した後、前記基板保持具を前記反応管から搬出させ、前記基板を移載可能な位置を基準に前記基板保持具を所定角度回転させた状態で前記基板保持具に載置された前記基板を検知させるように、前記移載機構、前記回転機構、前記異常検出装置、前記搬送制御部を制御するよう構成されている主制御部と、を備えた基板処理装置。
- 複数の基板を保持する基板保持具を回転させる回転機構と、前記基板を保持する基板保持体を有する移載機構と、前記移載機構と前記基板保持具との間で前記基板の搬送を制御する搬送制御部と、前記基板保持具に保持された基板の移載状態を検知する異常検出装置と、を備えた基板処理装置において実行されるプログラムであって、複数枚の基板が載置された状態の基板保持具を反応管内に搬入する手順と、前記反応管内にガスを供給して前記基板を処理する手順と、前記基板保持具を前記反応管内に搬入する前に、前記基板を移載可能な位置を基準に前記基板保持具を所定角度回転させた状態で前記基板保持具に載置された前記基板を検知する手順と、をコンピュータにより前記基板処理装置に実行させるプログラム。
- 複数の基板を保持する基板保持具を回転させる回転機構と、前記基板を保持する基板保持体を有する移載機構と、前記移載機構と前記基板保持具との間で前記基板の搬送を制御する搬送制御部と、前記基板保持具に保持された基板の移載状態を検知する異常検出装置と、前記基板保持具を前記反応管内に搬入する前に、前記基板を移載可能な位置を基準に前記基板保持具を所定角度回転させた状態で前記基板保持具に載置された前記基板を検知させ、前記基板が載置された状態の基板保持具を反応管内に搬入させ、前記反応管内にガスを供給して前記基板を処理させ、前記基板を処理した後、前記基板保持具を前記反応管から搬出させるように、前記移載機構、前記回転機構、前記異常検出装置、前記搬送制御部を制御するよう構成されている主制御部と、を備えた基板処理装置。
- 複数の基板を保持する基板保持具を回転させる回転機構と、前記基板を保持する基板保持体を有する移載機構と、前記移載機構と前記基板保持具との間で前記基板の搬送を制御する搬送制御部と、前記基板保持具に保持された基板の移載状態を検知する異常検出装置と、を備えた基板処理装置において実行されるプログラムであって、複数枚の基板が載置された状態の基板保持具を反応管内に搬入する手順と、前記反応管内にガスを供給して前記基板を処理する手順と、前記基板を処理した後、前記基板保持具を前記反応管から搬出する手順と、前記基板を移載可能な位置を基準に前記基板保持具を所定角度回転させた状態で前記基板保持具に載置された前記基板を検知する手順と、前記基板の移載可能な位置で前記基板保持具に載置された前記基板を検知する手順と、をコンピュータにより前記基板処理装置に実行させるプログラム。
- 複数の基板を保持する基板保持具を回転させる回転機構と、前記基板を保持する基板保持体を有する移載機構と、前記移載機構と前記基板保持具との間で前記基板の搬送を制御する搬送制御部と、前記基板保持具に保持された基板の移載状態を検知する異常検出装置と、前記基板が載置された状態の基板保持具を反応管内に搬入させ、前記反応管内にガスを供給して前記基板を処理させ、前記基板を処理した後、前記基板保持具を前記反応管から搬出させ、前記基板を移載可能な位置を基準に前記基板保持具を所定角度回転させた状態で前記基板保持具に載置された前記基板を検知させ、前記基板の移載可能な位置で前記基板保持具に載置された前記基板を検知させるように、前記移載機構、前記回転機構、前記異常検出装置、前記搬送制御部を制御するよう構成されている主制御部と、を備えた基板処理装置。
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