JP6839690B2 - How to manufacture a thermoelectric module - Google Patents

How to manufacture a thermoelectric module Download PDF

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JP6839690B2
JP6839690B2 JP2018182048A JP2018182048A JP6839690B2 JP 6839690 B2 JP6839690 B2 JP 6839690B2 JP 2018182048 A JP2018182048 A JP 2018182048A JP 2018182048 A JP2018182048 A JP 2018182048A JP 6839690 B2 JP6839690 B2 JP 6839690B2
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thermoelectric element
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JP2020053572A (en
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仁志 吉見
仁志 吉見
秋浩 西山
秋浩 西山
近藤　清人
清人 近藤
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Aisin Takaoka Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y10/00—Processes of additive manufacturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y80/00—Products made by additive manufacturing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device

Description

本発明は、熱電モジュールの製造方法に関する。 The present invention relates to the production how the thermoelectric module.

いわゆるゼーベック効果又はペルチェ効果を利用した熱電モジュール（熱電変換モジュールとも称される）として、例えば、特許文献１に開示されたものが知られている。この種の熱電モジュールは、電極パターンが形成された一対の基板間に、複数の熱電素子（熱電変換素子とも称される）を配列するようにして構成される。上記熱電モジュールでは、熱電素子としてＰ型素子及びＮ型素子が用いられ、これら極性の異なる熱電素子が各基板の電極パターンを通じて電気的に直列接続されるように、各基板の電極パターン及び各熱電素子の配列パターンが定められている。 As a thermoelectric module (also referred to as a thermoelectric conversion module) utilizing the so-called Seebeck effect or Peltier effect, for example, the one disclosed in Patent Document 1 is known. This type of thermoelectric module is configured by arranging a plurality of thermoelectric elements (also referred to as thermoelectric conversion elements) between a pair of substrates on which an electrode pattern is formed. In the thermoelectric module, P-type elements and N-type elements are used as thermoelectric elements, and the electrode patterns of each substrate and each thermoelectric are connected so that the thermoelectric elements having different polarities are electrically connected in series through the electrode patterns of each substrate. The arrangement pattern of the elements is defined.

ここで、上記熱電モジュールの従来の製造方法について説明する。先ず、粉末状の熱電材料を焼結してインゴットを作成し、これを所定の厚さ寸法にカットしてプレートを作成する。その後、そのプレートをダイサー等によってダイシングし、所定形状（例えば角柱状）を有する複数の熱電素子を作成する。これらの工程をＰ型の熱電素子及びＮ型の熱電素子のそれぞれについて行う。 Here, a conventional method for manufacturing the thermoelectric module will be described. First, a powdered thermoelectric material is sintered to prepare an ingot, which is cut to a predetermined thickness to prepare a plate. After that, the plate is diced with a dicer or the like to create a plurality of thermoelectric elements having a predetermined shape (for example, a prismatic shape). These steps are performed for each of the P-type thermoelectric element and the N-type thermoelectric element.

上記のようにしてＰ型及びＮ型の各熱電素子を作成した後、一方の基板に形成された電極パターン上に接合材としてのはんだクリーム等を塗布し、電極パターン上に複数の熱電素子を配置していく。この際、Ｐ型素子とＮ型素子とが直列接続となるように、各熱電素子を所定の配列パターンで配列していく。その後、熱電素子が配列された一方の基板の上方から、電極パターン上に接合材が塗布された他方の基板を電極形成面が素子側となるようにして被せる。最後に、それをリフロー炉等の加熱炉に導入してはんだ付け処理を行い、各熱電素子と各基板の電極パターンとを接合する。 After producing the P-type and N-type thermoelectric elements as described above, a solder cream or the like as a bonding material is applied onto the electrode pattern formed on one of the substrates, and a plurality of thermoelectric elements are formed on the electrode pattern. I will arrange it. At this time, each thermoelectric element is arranged in a predetermined arrangement pattern so that the P-type element and the N-type element are connected in series. Then, from above one substrate on which the thermoelectric element is arranged, the other substrate on which the bonding material is applied on the electrode pattern is covered so that the electrode forming surface is on the element side. Finally, it is introduced into a heating furnace such as a reflow furnace and soldered to join each thermoelectric element and the electrode pattern of each substrate.

特開２０１６−１７８１４７号公報Japanese Unexamined Patent Publication No. 2016-178147

従来の製造方法では、各熱電素子が所定の配列パターンで配列されるように、電極パターン上に熱電素子を１つ１つ配置していく必要がある。しかしながら、このような作業は手間がかかるし、例えば素子サイズが小さくなるほど、熱電素子を摘まんだり、各熱電素子を配列パターン通りに正確に配置したりすること自体が困難となる。 In the conventional manufacturing method, it is necessary to arrange the thermoelectric elements one by one on the electrode pattern so that the thermoelectric elements are arranged in a predetermined arrangement pattern. However, such work is troublesome, and for example, as the element size becomes smaller, it becomes difficult to pick the thermoelectric elements and to arrange each thermoelectric element accurately according to the arrangement pattern.

また、従来の製造方法では、各熱電素子の作成からモジュール化までの工程数が多くなり、製造コストの増大や生産性の低下を招くという懸念がある。 Further, in the conventional manufacturing method, the number of steps from the production of each thermoelectric element to the modularization increases, and there is a concern that the manufacturing cost increases and the productivity decreases.

本発明は、上記事情に鑑みてなされたものであり、電極上への各熱電素子の配列を簡単に行うことができるとともに、工程数を削減することが可能な熱電モジュールの製造方法を提供することを目的とする。 The present invention has been made in view of the above circumstances, and provides a method for manufacturing a thermoelectric module capable of easily arranging each thermoelectric element on an electrode and reducing the number of steps. The purpose is.

上記課題を解決すべく、第１の発明では、熱電モジュールの製造方法であって、３次元造型機の内部に第１電極を設置する第１設置工程と、前記第１電極上にＰ型とＮ型とのうちの一方である熱電特性を有する第１熱電素子を、前記３次元造型機により形成して、第１中間体を生成する第１形成工程と、３次元造型機の内部に第２電極を設置する第２設置工程と、前記第２電極上にＰ型とＮ型とのうちの他方である熱電特性を有する第２熱電素子を、前記３次元造型機により形成して、第２中間体を生成する第２形成工程と、前記第１中間体の前記第１熱電素子を前記第２中間体の第２電極に接合し、前記第２中間体の前記第２熱電素子を前記第１中間体の前記第１電極に接合する接合工程と、を備えることを特徴とする。 In order to solve the above problems, the first invention is a method for manufacturing a thermoelectric module, in which a first installation step of installing a first electrode inside a three-dimensional molding machine and a P type on the first electrode are used. A first forming step of forming a first thermoelectric element having a thermoelectric characteristic, which is one of the N types, by the three-dimensional molding machine to generate a first intermediate, and a first forming inside the three-dimensional molding machine. A second installation step of installing the two electrodes and a second thermoelectric element having thermoelectric characteristics, which is the other of the P type and the N type, are formed on the second electrode by the three-dimensional molding machine. In the second forming step of producing the two intermediates, the first thermoelectric element of the first intermediate is joined to the second electrode of the second intermediate, and the second thermoelectric element of the second intermediate is attached to the second thermoelectric element. It is characterized by comprising a joining step of joining the first intermediate body to the first electrode.

第１の発明によれば、第１熱電素子を第１電極に位置決めした状態で形成することができるとともに、第２熱電素子を第２電極に位置決めした状態で形成することができる。よって、従来のように各熱電素子を形成した後、それらを１つ１つ電極上に配置していく必要がなく、各熱電素子の配列を簡単に行うことが可能になる。 According to the first invention, the first thermoelectric element can be formed in a state of being positioned on the first electrode, and the second thermoelectric element can be formed in a state of being positioned on the second electrode. Therefore, it is not necessary to arrange each thermoelectric element one by one after forming each thermoelectric element as in the conventional case, and it is possible to easily arrange each thermoelectric element.

加えて、各熱電素子の形成と、各電極に対する各熱電素子の配置とが同時に行われるため、従来、素子形成とは別に行っていた素子配列の工程を省略可能となる。そればかりか、３次元造型機では、熱電材料の粉末から直接、熱電素子を形成できるため、インゴットやプレートを作成したり、プレートをダイシングしたりする工程を省略することもできる。よって、各熱電素子の作成からモジュール化までの全体工程数を削減することができ、製造コストの低減や生産性の向上を図ることが可能になる。 In addition, since the formation of each thermoelectric element and the arrangement of each thermoelectric element with respect to each electrode are performed at the same time, it is possible to omit the process of arranging the elements, which has been conventionally performed separately from the element formation. Not only that, in the three-dimensional molding machine, since the thermoelectric element can be formed directly from the powder of the thermoelectric material, the steps of making an ingot or a plate and dicing the plate can be omitted. Therefore, the total number of steps from the production of each thermoelectric element to the modularization can be reduced, and the manufacturing cost can be reduced and the productivity can be improved.

第２の発明では、前記第１形成工程において、前記第１電極の表面を融点近くまで加温することにより軟化させた後に、前記第１熱電素子が形成される、または、前記第２形成工程において、前記第２電極の表面を融点近くまで加温することにより軟化させた後に、前記第２熱電素子が形成されることを特徴とする。 In the second invention, in the first forming step, the surface of the first electrode is softened by heating to near the melting point, and then the first thermoelectric element is formed, or the second forming step. The second thermoelectric element is formed after softening the surface of the second electrode by heating it to near the melting point.

第２の発明によれば、第１形成工程又は第２形成工程において熱電素子及び電極を接合することができ、電極に固定された状態の熱電素子を形成することが可能になる。これにより、第１中間体又は第２中間体の取り扱い時において熱電素子の姿勢や位置が変動することが抑制され、素子配列を安定させた状態で熱電モジュールを製造することが可能になる。 According to the second invention, the thermoelectric element and the electrode can be joined in the first forming step or the second forming step, and the thermoelectric element fixed to the electrode can be formed. As a result, fluctuations in the posture and position of the thermoelectric element during handling of the first intermediate or the second intermediate are suppressed, and the thermoelectric module can be manufactured in a state where the element arrangement is stabilized.

第３の発明では、上記第１の発明において、前記第１設置工程の前に、前記第１電極の表面に接合材を付しておく、または、前記第２設置工程の前に、前記第２電極の表面に接合材を付しておくことを特徴とする。 In the third invention, in the first invention, a bonding material is attached to the surface of the first electrode before the first installation step, or before the second installation step, the first step. The feature is that a bonding material is attached to the surface of the two electrodes.

第３の発明によれば、第１又は第２形成工程において、電極との間に接合材が介在した状態で熱電素子が形成される。これにより、第１熱電素子と第１電極とを接合し、第２熱電素子と第２電極とを接合することができる。 According to the third invention, in the first or second forming step, the thermoelectric element is formed with the bonding material interposed between the electrode and the thermoelectric element. As a result, the first thermoelectric element and the first electrode can be joined, and the second thermoelectric element and the second electrode can be joined.

第４の発明では、上記第１の発明〜第３の発明のいずれかにおいて、前記第１形成工程において、前記第１熱電素子は、前記第１電極側の接合面の面積が前記第２電極側の接合面の面積よりも大きく形成される、または、前記第２形成工程において、前記第２熱電素子は、前記第１電極側の接合面の面積が前記第２電極側の接合面の面積よりも大きく形成されることを特徴とする。 In the fourth invention, in any one of the first to third inventions, in the first forming step, the area of the joint surface on the first electrode side of the first thermoelectric element is the second electrode. It is formed larger than the area of the joint surface on the side, or in the second forming step, the area of the joint surface on the first electrode side of the second thermoelectric element is the area of the joint surface on the second electrode side. It is characterized in that it is formed larger than.

第４の発明によれば、熱電素子において第１電極側の端部と第２電極側の端部との温度差を大きくすることができる。これにより、熱電素子の発電量を増大させることができ、熱電効率に優れた熱電モジュールを製造することが可能になる。 According to the fourth invention, it is possible to increase the temperature difference between the end portion on the first electrode side and the end portion on the second electrode side in the thermoelectric element. As a result, the amount of power generated by the thermoelectric element can be increased, and a thermoelectric module having excellent thermoelectric efficiency can be manufactured.

第５の発明では、長さ方向を起電力発生方向とし、前記起電力発生方向の両端が電極に接合される接合面とされている熱電素子であって、前記両接合面のうち一方の接合面の面積が他方の接合面の面積より大きく形成されていることを特徴とする。 In the fifth invention, a thermoelectric element has a length direction as an electromotive force generation direction and both ends of the electromotive force generation direction are joint surfaces to be joined to electrodes, and one of the two joint surfaces is joined. The surface area is formed to be larger than the area of the other joint surface.

第５の発明によれば、長さ方向（起電力発生方向）の一端部と他端部との温度差を大きくすることができ、発電量を増大させることが可能になる。 According to the fifth invention, the temperature difference between one end and the other end in the length direction (electromotive force generation direction) can be increased, and the amount of power generation can be increased.

第６の発明では、上記第５の発明において、円錐台形状又は角錐台形状である錐台形状に形成されていることを特徴とする。 A sixth aspect of the present invention is characterized in that, in the fifth aspect of the invention, it is formed in a truncated cone shape or a truncated cone shape.

第６の発明では、長さ方向（高さ方向）の両端面を上記第５の発明に係る両接合面とすることで、上記第５の発明に係る熱電素子を好適に実現できる。さらに、例えば長さ方向に直交する断面の面積が一定である柱状の熱電素子に比べて、側面部の表面積が大きくなり、側面部での放熱領域を拡大することもできる。 In the sixth invention, the thermoelectric element according to the fifth invention can be suitably realized by forming both end faces in the length direction (height direction) as both joint surfaces according to the fifth invention. Further, for example, as compared with a columnar thermoelectric element having a constant cross-sectional area orthogonal to the length direction, the surface area of the side surface portion is larger, and the heat dissipation area on the side surface portion can be expanded.

第７の発明では、熱電モジュールであって、上記第５の発明又は第６の発明に記載の熱電素子を、面積の小さい側を高温側、面積の大きい側を低温側となるように配置し、複数の熱電素子をモジュール化して構成したことを特徴とする。 In the seventh invention, the thermoelectric module according to the fifth or sixth invention is arranged so that the small area side is the high temperature side and the large area side is the low temperature side. , It is characterized in that a plurality of thermoelectric elements are modularized and configured.

第７の発明によれば、各熱電素子において低温側の接合面の面積が高温側の接合面の面積よりも大きいことで、高温側での入熱量よりも低温側での放熱量を大きくすることができる。このため、高温側の端部が昇温しても、低温側の端部は低温に維持されやすくなり、これら両端部間の温度差を好適に拡大することができる。これにより、各熱電素子の発電量を増大させることができ、熱電効率に優れた熱電モジュールを実現可能となる。 According to the seventh invention, in each thermoelectric element, the area of the joint surface on the low temperature side is larger than the area of the joint surface on the high temperature side, so that the amount of heat released on the low temperature side is larger than the amount of heat input on the high temperature side. be able to. Therefore, even if the temperature of the end portion on the high temperature side rises, the end portion on the low temperature side is likely to be maintained at a low temperature, and the temperature difference between these both end portions can be suitably expanded. As a result, the amount of power generated by each thermoelectric element can be increased, and a thermoelectric module having excellent thermoelectric efficiency can be realized.

本発明の一実施の形態に係る熱電モジュールの正面図。The front view of the thermoelectric module which concerns on one Embodiment of this invention. 上電極が形成された上基板の電極側から見た平面図。A plan view seen from the electrode side of the upper substrate on which the upper electrode is formed. 下電極が形成された下基板の電極側から見た平面図。A plan view seen from the electrode side of the lower substrate on which the lower electrode is formed. 熱電モジュールの製造方法を説明するための説明図。Explanatory drawing for demonstrating the manufacturing method of a thermoelectric module. 熱電モジュールの製造方法を説明するための説明図。Explanatory drawing for demonstrating the manufacturing method of a thermoelectric module. 熱電素子の変形例を示す図。The figure which shows the modification of the thermoelectric element.

以下、本発明を具体化した一実施の形態について説明する。 Hereinafter, an embodiment embodying the present invention will be described.

＜熱電モジュールの構成＞
本発明に係る熱電モジュール１０の構成について図１〜図３を参照しながら説明する。 <Structure of thermoelectric module>
The configuration of the thermoelectric module 10 according to the present invention will be described with reference to FIGS. 1 to 3.

図１に示すように、熱電モジュール１０は、対向配置された一対の上基板１１及び下基板１２と、これら基板１１，１２間に配置された複数の熱電素子２０とを備えている。 As shown in FIG. 1, the thermoelectric module 10 includes a pair of upper substrates 11 and lower substrates 12 arranged to face each other, and a plurality of thermoelectric elements 20 arranged between the substrates 11 and 12.

上基板１１は、絶縁基板となっており、例えばガラスエポキシ基板等によって構成されている。図２に示すように、上基板１１は平面視で矩形状をなしており、その表面には、第１電極としての上電極１３が複数形成されている。各上電極１３は、例えば銅やモリブデン又はこれらの合金等の導電材料によって形成されており、２個の熱電素子２０を配置可能な薄板状をなしている。 The upper substrate 11 is an insulating substrate, and is composed of, for example, a glass epoxy substrate or the like. As shown in FIG. 2, the upper substrate 11 has a rectangular shape in a plan view, and a plurality of upper electrodes 13 as first electrodes are formed on the surface thereof. Each upper electrode 13 is formed of a conductive material such as copper, molybdenum, or an alloy thereof, and has a thin plate shape into which two thermoelectric elements 20 can be arranged.

下基板１２も上基板１１と同様に絶縁基板となっており、図３に示すように、その表面には、第２電極としての下電極１４が複数形成されている。各下電極１４は、上基板１１の各上電極１３と同様の形状及び大きさを有しているが、その配置位置は、各上電極１３に対して半ピッチ分（素子１個分）ずれたものとなっている。 The lower substrate 12 is also an insulating substrate like the upper substrate 11, and as shown in FIG. 3, a plurality of lower electrodes 14 as second electrodes are formed on the surface thereof. Each lower electrode 14 has the same shape and size as each upper electrode 13 of the upper substrate 11, but its arrangement position is deviated by half a pitch (one element) with respect to each upper electrode 13. It has become an electrode.

そして、図１に示すように、上基板１１に形成された上電極１３に各熱電素子２０の上端部２０ａが接合されているとともに、下基板１２に形成された下電極１４に各熱電素子２０の下端部２０ｂが接合されている。すなわち、本実施の形態において熱電素子２０は、長さ方向（各電極１３，１４の対向方向）を起電力発生方向として使用されるものとなっており、詳しくは、上端部２０ａと下端部２０ｂとの温度差によって起電力を発生させるように構成されている。熱電素子２０は、例えばシリコン−ゲルマニウム系、マグネシウム−シリサイド系、マンガン−シリサイド系等の熱電材料によって形成されている。 Then, as shown in FIG. 1, the upper end 20a of each thermoelectric element 20 is bonded to the upper electrode 13 formed on the upper substrate 11, and each thermoelectric element 20 is bonded to the lower electrode 14 formed on the lower substrate 12. The lower end portion 20b of the above is joined. That is, in the present embodiment, the thermoelectric element 20 is used in the length direction (opposite direction of the electrodes 13 and 14) as the electromotive force generation direction. Specifically, the upper end portion 20a and the lower end portion 20b are used. It is configured to generate an electromotive force due to the temperature difference with. The thermoelectric element 20 is formed of, for example, a thermoelectric material such as silicon-germanium-based, magnesium-0045-based, or manganese-0045-based.

熱電モジュール１０では、熱電素子２０としてＰ型の熱電素子（Ｐ型素子）２０ｐとＮ型の熱電素子（Ｎ型素子）２０ｎとを有しており、これらＰ型素子２０ｐ及びＮ型素子２０ｎが熱電素子２０の配列方向において交互に配置されている。そして、１つのＰ型素子２０ｐと、それに隣り合う１つのＮ型素子２０ｎとが一対とされ、これら両素子２０ｐ，２０ｎの上端部が１つの上電極１３と接合されている。その際、上電極１３と下電極１４との配置位置が半ピッチ分ずれていることで、下基板１２側では、隣り合う上電極１３ａ，１３ｂの一方に接合されたＮ型素子２０ｎと、他方に接合されたＰ型素子２０ｐとの各下端部が１つの下電極１４に接合されるようになっている。 The thermoelectric module 10 has a P-type thermoelectric element (P-type element) 20p and an N-type thermoelectric element (N-type element) 20n as the thermoelectric element 20, and these P-type element 20p and N-type element 20n The thermoelectric elements 20 are arranged alternately in the arrangement direction. Then, one P-type element 20p and one N-type element 20n adjacent thereto are paired, and the upper ends of both elements 20p and 20n are joined to one upper electrode 13. At that time, since the arrangement positions of the upper electrode 13 and the lower electrode 14 are shifted by half a pitch, on the lower substrate 12 side, the N-type element 20n bonded to one of the adjacent upper electrodes 13a and 13b and the other Each lower end portion of the P-type element 20p joined to the lower electrode 14 is joined to one lower electrode 14.

なお、図２では、上電極１３に対するＰ型素子２０ｐ及びＮ型素子２０ｎの各接合面をそれぞれ符号２１ｐ，２１ｎで示し、図３では、下電極１４に対するＰ型素子２０ｐ及びＮ型素子２０ｎの各接合面を符号２２ｐ，２２ｎで示している。また、これらの図では、Ｐ型素子２０ｐの接合面２１ｐ，２２ｐと、Ｎ型素子２０ｎの接合面２１ｎ，２２ｎとの区別を容易化するため、両者に異なるハッチングを付している。 In FIG. 2, the joint surfaces of the P-type element 20p and the N-type element 20n with respect to the upper electrode 13 are indicated by reference numerals 21p and 21n, respectively, and in FIG. 3, the P-type element 20p and the N-type element 20n with respect to the lower electrode 14 are shown. The joint surfaces are indicated by reference numerals 22p and 22n. Further, in these figures, different hatching is provided on the joint surfaces 21p and 22p of the P-type element 20p and the joint surfaces 21n and 22n of the N-type element 20n in order to facilitate the distinction between them.

そして、Ｐ型素子２０ｐ及びＮ型素子２０ｎが上電極１３及び下電極１４に対して上記のように接合されることで、それら両素子２０ｐ，２０ｎが電気的に直列接続された状態となり、直列経路が構成される。この直列経路の両端となる下電極１４ａ，１４ｂからはリード線１５が引き出されており、このリード線１５を介して、熱電モジュール１０で発生した電力を取り出すことが可能となっている。 Then, the P-type element 20p and the N-type element 20n are joined to the upper electrode 13 and the lower electrode 14 as described above, so that the two elements 20p and 20n are electrically connected in series and in series. The route is constructed. Lead wires 15 are drawn from the lower electrodes 14a and 14b at both ends of the series path, and the electric power generated by the thermoelectric module 10 can be taken out through the lead wires 15.

上記熱電モジュール１０の使用に際しては、加熱ダクト等の熱源と冷却ダクト等の冷却装置との間に上記熱電モジュール１０が配置される。これにより、熱電モジュール１０に温度差が付与され、各熱電素子２０が発電する。その際、本実施の形態では、上基板１１が冷却装置側で下基板１２が熱源側となるように、熱電モジュール１０の向きが設定される。すなわち、上基板１１側が低温となり、下基板１２側が高温となるように温度差が付与される。なお、必ずしも熱源及び冷却装置の両方を用いる必要はなく、いずれか一方のみの使用であってもよい。 When using the thermoelectric module 10, the thermoelectric module 10 is arranged between a heat source such as a heating duct and a cooling device such as a cooling duct. As a result, a temperature difference is given to the thermoelectric module 10, and each thermoelectric element 20 generates electricity. At that time, in the present embodiment, the orientation of the thermoelectric module 10 is set so that the upper substrate 11 is on the cooling device side and the lower substrate 12 is on the heat source side. That is, the temperature difference is applied so that the upper substrate 11 side becomes low temperature and the lower substrate 12 side becomes high temperature. It is not always necessary to use both the heat source and the cooling device, and only one of them may be used.

ここで、本実施の形態では、発電量を高めるべく、熱電素子２０の形状が工夫されている。以下、かかる構成について説明する。 Here, in the present embodiment, the shape of the thermoelectric element 20 is devised in order to increase the amount of power generation. Hereinafter, such a configuration will be described.

図２及び図３に示すように、本実施の形態に係る熱電素子２０は、上電極１３に対する接合面２１の面積が下電極１４に対する接合面２２の面積よりも大きくなるように形成されている。詳しくは、図１に示すように、熱電素子２０が角錐台形状をなしており、長さ方向（高さ方向）の両端面が上記両接合面２１，２２となるように構成されている。 As shown in FIGS. 2 and 3, the thermoelectric element 20 according to the present embodiment is formed so that the area of the joint surface 21 with respect to the upper electrode 13 is larger than the area of the joint surface 22 with respect to the lower electrode 14. .. Specifically, as shown in FIG. 1, the thermoelectric element 20 has a pyramidal trapezoidal shape, and both end faces in the length direction (height direction) are configured to be the two joint surfaces 21 and 22.

このような構成において、下基板１２を高温側基板とし、上基板１１を低温側基板とした場合、各熱電素子２０では、低温側に位置する接合面２１の面積が大きいことで、上端部２０ａ側の放熱量も大きくなる。この場合、下基板１２からの熱で下端部２０ｂ側が昇温しても、上端部２０ａ側は低温に維持されやすくなり、上端部２０ａと下端部２０ｂとの温度差を大きくすることができる。これにより、各熱電素子２０での発電量が増大され、熱電モジュール１０の熱電効率を向上させることが可能になる。 In such a configuration, when the lower substrate 12 is the high temperature side substrate and the upper substrate 11 is the low temperature side substrate, each thermoelectric element 20 has a large area of the joint surface 21 located on the low temperature side, so that the upper end portion 20a The amount of heat released on the side also increases. In this case, even if the temperature of the lower end portion 20b is raised by the heat from the lower substrate 12, the upper end portion 20a side is likely to be maintained at a low temperature, and the temperature difference between the upper end portion 20a and the lower end portion 20b can be increased. As a result, the amount of power generated by each thermoelectric element 20 is increased, and the thermoelectric efficiency of the thermoelectric module 10 can be improved.

さらに、各熱電素子２０が角錐台形状であることで、例えば角柱状である場合に比べ、側面部２０ｃの表面積が大きくなり、側面部２０ｃでも放熱領域が拡大される。これにより、下基板１２からの熱が熱電素子２０の上端部２０ａに伝わることが抑制され、上端部２０ａと下端部２０ｂとの温度差を一層大きくすることができる。 Further, since each thermoelectric element 20 has a pyramidal trapezoidal shape, the surface area of the side surface portion 20c is larger than that of, for example, a prismatic shape, and the heat dissipation region is also expanded in the side surface portion 20c. As a result, the heat from the lower substrate 12 is suppressed from being transferred to the upper end portion 20a of the thermoelectric element 20, and the temperature difference between the upper end portion 20a and the lower end portion 20b can be further increased.

＜熱電モジュール１０の製造方法＞
本実施の形態では、３次元造型機を用いて上記熱電モジュール１０を製造するものとなっている。以下、その具体的方法について図４〜図６を参照しながら詳細に説明する。 <Manufacturing method of thermoelectric module 10>
In the present embodiment, the thermoelectric module 10 is manufactured by using a three-dimensional molding machine. Hereinafter, the specific method will be described in detail with reference to FIGS. 4 to 6.

熱電モジュール１０の製造にあたっては先ず、図４（ａ）に示すように、上電極１３が形成された上基板１１を３次元造型機内の設置台３１に設置する（第１設置工程）。この際、上電極１３の形成面を上側とした状態で、設置台３１上の所定の設置位置に上基板１１を位置決めする。 In manufacturing the thermoelectric module 10, first, as shown in FIG. 4A, the upper substrate 11 on which the upper electrode 13 is formed is installed on the installation table 31 in the three-dimensional molding machine (first installation step). At this time, the upper substrate 11 is positioned at a predetermined installation position on the installation table 31 with the formation surface of the upper electrode 13 facing upward.

次に、図４（ｂ）に示すように、設置台３１に設置された上基板１１の各電極１３上に、３次元造型機によって各Ｐ型素子２０ｐを形成し、第１中間体２３を生成する（第１形成工程）。この工程では、先ず、Ｐ型素子２０ｐを構成する熱電材料の粉末を、上電極１３が形成された上基板１１の表面全体に敷き詰めて熱電材料層（粉末床）２４を形成する。その後、この熱電材料層２４のうちＰ型素子２０ｐを造型する領域２５にレーザ光を照射し、領域２５の熱電材料層２４を溶融・焼結させる。これをＰ型素子２０ｐの高さ寸法分だけ繰り返し、焼結部分を積層していく。その際、上層のレーザ照射時に下層の焼結部分との接合（積層方向の接合）も行われるため、一体化された状態のＰ型素子２０ｐが形成される。 Next, as shown in FIG. 4B, each P-type element 20p is formed on each electrode 13 of the upper substrate 11 installed on the installation table 31 by a three-dimensional molding machine, and the first intermediate 23 is formed. Generate (first forming step). In this step, first, the powder of the thermoelectric material constituting the P-type element 20p is spread over the entire surface of the upper substrate 11 on which the upper electrode 13 is formed to form the thermoelectric material layer (powder bed) 24. After that, the region 25 in which the P-type element 20p is formed in the thermoelectric material layer 24 is irradiated with laser light to melt and sinter the thermoelectric material layer 24 in the region 25. This is repeated for the height dimension of the P-type element 20p, and the sintered portions are laminated. At that time, since bonding with the sintered portion of the lower layer (bonding in the stacking direction) is also performed when the upper layer is irradiated with the laser, the P-type element 20p in an integrated state is formed.

３次元造型機には、各Ｐ型素子２０ｐの形状、各種サイズ及び配列パターン（座標位置）を示す３次元データが入力又は記憶されており、この３次元データに基づいて上記レーザ光の照射処理が行われる。このため、第１形成工程では、上基板１１上に配置される全てのＰ型素子２０ｐが並行して形成されていくだけでなく、各Ｐ型素子２０ｐが配列パターンに対応する位置に位置決めされた状態で形成されていく。つまり、各Ｐ型素子２０ｐの形成と配列とが同時に行われる。 Three-dimensional data indicating the shape, various sizes, and arrangement patterns (coordinate positions) of each P-type element 20p is input or stored in the three-dimensional molding machine, and the laser beam irradiation process is performed based on the three-dimensional data. Is done. Therefore, in the first forming step, not only all the P-type elements 20p arranged on the upper substrate 11 are formed in parallel, but also each P-type element 20p is positioned at a position corresponding to the arrangement pattern. It is formed in a state. That is, the formation and arrangement of each P-type element 20p are performed at the same time.

また、各Ｐ型素子２０ｐの形成に際しては、上基板１１上に１層分の熱電材料層２４を形成する都度、当該材料層２４に焼結用のレーザ光を照射する。この場合、初層の形成時に行うレーザ照射に際しては、レーザ光の一部が熱電材料層２４を透過したり、熱電材料層２４の熱が上電極１３に伝わったりすることで、上電極１３の表面温度が上昇する。 Further, when forming each P-type element 20p, each time a thermoelectric material layer 24 for one layer is formed on the upper substrate 11, the material layer 24 is irradiated with a laser beam for sintering. In this case, when the laser irradiation is performed at the time of forming the first layer, a part of the laser light is transmitted through the thermoelectric material layer 24, or the heat of the thermoelectric material layer 24 is transferred to the upper electrode 13, so that the upper electrode 13 The surface temperature rises.

その際、レーザ光の出力や照射時間を調整することで、上電極１３の表面を融点近くまで加温し、軟化させる。これにより、レーザ光が照射される領域２５において、軟化状態の上電極１３と溶融状態の熱電材料層２４とが馴染み、その後、両者が固化することで接合される。つまり、本実施の形態では、Ｐ型素子２０ｐの形成及び配列に留まらず、上電極１３とＰ型素子２０ｐとの接合も第１形成工程において行われる。 At that time, by adjusting the output of the laser beam and the irradiation time, the surface of the upper electrode 13 is heated to near the melting point and softened. As a result, in the region 25 irradiated with the laser beam, the softened upper electrode 13 and the molten thermoelectric material layer 24 become familiar, and then both are solidified and joined. That is, in the present embodiment, not only the formation and arrangement of the P-type element 20p but also the joining of the upper electrode 13 and the P-type element 20p is performed in the first forming step.

例えば、前述した従来の製造方法のように、電極上に熱電素子を配置した段階で両者が接合されていない場合には、リフロー炉等への運搬時において素子配列が乱れやすくなる。このため、慎重な運搬作業が求められたり、素子配置のやり直しや修正を強いられたりするおそれがある。また、リフロー炉等による加熱工程においても、素子両端のはんだを溶融させた際に素子が傾いたり、動いたりする懸念もある。 For example, if the thermoelectric elements are not joined at the stage of arranging the thermoelectric elements on the electrodes as in the conventional manufacturing method described above, the element arrangement is likely to be disturbed during transportation to a reflow furnace or the like. For this reason, careful transportation work may be required, and the element arrangement may be forced to be redone or corrected. Further, even in the heating process using a reflow furnace or the like, there is a concern that the element may tilt or move when the solder at both ends of the element is melted.

この点、本実施の形態では、各Ｐ型素子２０ｐの形成と併せて上電極１３との接合が行われるため、Ｐ型素子２０ｐの姿勢や位置を固定することができ、その後の工程で素子配列が乱れることを抑制できる。これにより、運搬が容易となるばかりか、素子配置のやり直し等の発生を抑制することもでき、生産性を向上させることが可能になる。 In this regard, in the present embodiment, since the P-type element 20p is formed and joined to the upper electrode 13, the posture and position of the P-type element 20p can be fixed, and the element can be fixed in a subsequent step. It is possible to suppress the disorder of the sequence. As a result, not only the transportation becomes easy, but also the occurrence of re-arrangement of the elements can be suppressed, and the productivity can be improved.

なお、熱電材料の粉末粒径は、特に限定されるものではないが、１μｍ以上で且つ１００μｍ以下とすることが好ましく、１０μｍ以上で且つ８０μｍ以下とすることがさらに好ましい。粉末粒径を１μｍ以上とすることで、熱電材料層２４における１層分の厚み寸法が小さくなり過ぎず、Ｐ型素子２０ｐの造型時間が過度に長くなることを抑制できる。また、粉末粒径を１００μｍ以下とすることで、上記厚み寸法が過大となることが回避され、滑らかな側面形状のＰ型素子２０ｐを造型しやすくなるほか、レーザ照射に際して上電極１３を加温しやすくなり、接合処理の容易化を図ることもできる。 The powder particle size of the thermoelectric material is not particularly limited, but is preferably 1 μm or more and 100 μm or less, and more preferably 10 μm or more and 80 μm or less. By setting the powder particle size to 1 μm or more, the thickness dimension of one layer in the thermoelectric material layer 24 does not become too small, and it is possible to prevent the molding time of the P-type element 20p from becoming excessively long. Further, by setting the powder particle size to 100 μm or less, it is possible to prevent the thickness dimension from becoming excessive, it becomes easy to mold the P-type element 20p having a smooth side surface shape, and the upper electrode 13 is heated at the time of laser irradiation. It becomes easier to do so, and the joining process can be facilitated.

上記のようにして第１中間体２３を形成した後は、これを３次元造型機内から取り出し、その後、図４（ｃ）に示すように、下電極１４が形成された下基板１２を設置台３１に設置する（第２設置工程）。この際、下電極１４の形成面を上側とした状態で、設置台３１上の所定の設置位置に下基板１２を位置決めする。 After forming the first intermediate 23 as described above, it is taken out from the inside of the three-dimensional molding machine, and then, as shown in FIG. 4C, the lower substrate 12 on which the lower electrode 14 is formed is placed on the installation table. Install at 31 (second installation process). At this time, the lower substrate 12 is positioned at a predetermined installation position on the installation table 31 with the formation surface of the lower electrode 14 facing upward.

次に、図４（ｄ）に示すように、設置台３１に設置された下基板１２の各電極１４上に、３次元造型機によって各Ｎ型素子２０ｎを形成し、第２中間体２６を生成する（第２形成工程）。この第２形成工程は、Ｎ型素子２０ｎを構成する熱電材料の粉末を用い、上記第１形成工程と同様の方法で行う。第２形成工程の終了後は、第２中間体２６を３次元造型機から取り出す。 Next, as shown in FIG. 4D, each N-type element 20n is formed on each electrode 14 of the lower substrate 12 installed on the installation table 31 by a three-dimensional molding machine, and the second intermediate 26 is formed. Generate (second forming step). This second forming step is performed by the same method as the first forming step, using the powder of the thermoelectric material constituting the N-type element 20n. After the completion of the second forming step, the second intermediate 26 is taken out from the three-dimensional molding machine.

その後、第１中間体２３の上電極１３及び第２中間体２６の下電極１４のそれぞれに、はんだクリーム等の接合材２７（図５参照）を塗布する。接合材２７は、上電極１３及び下電極１４の各表面のうちＰ型素子２０ｐ、Ｎ型素子２０ｎが形成されていない部分に塗布する。 Then, a bonding material 27 (see FIG. 5) such as solder cream is applied to each of the upper electrode 13 of the first intermediate 23 and the lower electrode 14 of the second intermediate 26. The bonding material 27 is applied to the portions of the surfaces of the upper electrode 13 and the lower electrode 14 where the P-type element 20p and the N-type element 20n are not formed.

続いて、図５に示すように、接合材２７が塗布された第１中間体２３の上下を反転させ、接合材２７が塗布された第２中間体２６と対向させる。そして、第１中間体２３と第２中間体２６との位置合わせを行った上で、第１中間体２３を第２中間体２６に向けて移動させる。その後、第１中間体２３に形成されたＰ型素子２０ｐが第２中間体２６の下電極１４（接合材２７）に当接し、且つ、第２中間体２６に形成されたＮ型素子２０ｎが第１中間体２３の上電極１３（接合材２７）に当接するまで両中間体２３，２６を接近させ、第３中間体を生成する。なお、この作業は、手作業により行ってもよいし、昇降装置等を用いて機械的に行ってもよい。 Subsequently, as shown in FIG. 5, the first intermediate 23 coated with the bonding material 27 is turned upside down so as to face the second intermediate 26 coated with the bonding material 27. Then, after aligning the first intermediate 23 and the second intermediate 26, the first intermediate 23 is moved toward the second intermediate 26. After that, the P-type element 20p formed on the first intermediate 23 abuts on the lower electrode 14 (bonding material 27) of the second intermediate 26, and the N-type element 20n formed on the second intermediate 26 Both intermediates 23 and 26 are brought close to each other until they come into contact with the upper electrode 13 (bonding material 27) of the first intermediate 23 to form a third intermediate. This work may be performed manually or mechanically using an elevating device or the like.

最後に、上記第３中間体をリフロー炉等の加熱炉に導入し、加熱処理を行う。これにより、第１中間体２３のＰ型素子２０ｐを第２中間体２６の下電極１４に接合し、第２中間体２６のＮ型素子２０ｎを第１中間体２３の上電極１３に接合する（接合工程）。なお、接合材２７としてはんだクリームを用いた場合、接合工程は、はんだ付け工程となり、加熱処理は、はんだ付け処理となる。 Finally, the third intermediate is introduced into a heating furnace such as a reflow furnace and heat-treated. As a result, the P-type element 20p of the first intermediate 23 is bonded to the lower electrode 14 of the second intermediate 26, and the N-type element 20n of the second intermediate 26 is bonded to the upper electrode 13 of the first intermediate 23. (Joining process). When solder cream is used as the joining material 27, the joining step is a soldering step, and the heat treatment is a soldering treatment.

以上、詳述した本実施の形態によれば、以下の優れた効果を奏する。 According to the present embodiment described in detail above, the following excellent effects are obtained.

・上電極１３が形成された上基板１１を３次元造型機の内部に設置し、上電極１３上にＰ型素子２０ｐを造型して第１中間体２３を生成した後、下電極１４が形成された下基板１２を３次元造型機の内部に設置し、下電極１４上にＮ型素子２０ｎを造型して第２中間体２６を生成した。その後、第１中間体２３及び第２中間体２６を対向させ、第１中間体２３のＰ型素子２０ｐを第２中間体２６の下電極１４に接合し、第２中間体２６のＮ型素子２０ｎを第１中間体２３の上電極１３に接合するようにした。 -The upper substrate 11 on which the upper electrode 13 is formed is installed inside the three-dimensional molding machine, and the P-type element 20p is molded on the upper electrode 13 to generate the first intermediate 23, and then the lower electrode 14 is formed. The lower substrate 12 was placed inside the three-dimensional molding machine, and an N-type element 20n was molded on the lower electrode 14 to generate a second intermediate 26. After that, the first intermediate 23 and the second intermediate 26 are opposed to each other, the P-type element 20p of the first intermediate 23 is joined to the lower electrode 14 of the second intermediate 26, and the N-type element of the second intermediate 26 is joined. 20n was joined to the upper electrode 13 of the first intermediate 23.

上記構成によれば、Ｐ型素子２０ｐを上電極１３に位置決めした状態で形成することができるとともに、Ｎ型素子２０ｎを下電極１４に位置決めした状態で形成することができる。よって、従来のように各熱電素子を形成した後、それらを１つ１つ電極上に配置していく必要がなく、各熱電素子の配列を簡単に行うことが可能になる。 According to the above configuration, the P-type element 20p can be formed in a state of being positioned on the upper electrode 13, and the N-type element 20n can be formed in a state of being positioned on the lower electrode 14. Therefore, it is not necessary to arrange each thermoelectric element one by one after forming each thermoelectric element as in the conventional case, and it is possible to easily arrange each thermoelectric element.

加えて、各熱電素子２０の形成と、各電極１３，１４に対する各熱電素子２０の配置とが同時に行われるため、従来、素子形成とは別に行っていた素子配列の工程を省略可能となる。そればかりか、熱電材料の粉末から直接、熱電素子２０を形成できることから、インゴットやプレートを作成したり、プレートをダイシングしたりする工程を省略することもできる。よって、各熱電素子の作成からモジュール化までの全体工程数を削減することができ、製造コストの低減や生産性の向上を図ることが可能になる。 In addition, since the formation of each thermoelectric element 20 and the arrangement of each thermoelectric element 20 with respect to the electrodes 13 and 14 are performed at the same time, it is possible to omit the process of element arrangement which has been conventionally performed separately from the element formation. Not only that, since the thermoelectric element 20 can be formed directly from the powder of the thermoelectric material, the steps of making an ingot or a plate and dicing the plate can be omitted. Therefore, the total number of steps from the production of each thermoelectric element to the modularization can be reduced, and the manufacturing cost can be reduced and the productivity can be improved.

・上電極１３の表面を融点近くまで加温することにより軟化させた後に、Ｐ型素子２０ｐを形成するようにした。この場合、第１形成工程においてＰ型素子２０ｐと上電極１３とを接合することができ、上電極１３に固定された状態のＰ型素子２０ｐを形成することが可能になる。これにより、第１中間体２３の取り出し時や運搬時等においてＰ型素子２０ｐの姿勢や位置が変動することが抑制され、第１中間体２３の取り扱いが容易になる。さらに、接合工程において下電極１４上の接合材２７を溶融させた場合にも、Ｐ型素子２０ｐが傾いたり、動いたりすることがない。 -The surface of the upper electrode 13 was softened by heating it to near the melting point, and then the P-type element 20p was formed. In this case, the P-type element 20p and the upper electrode 13 can be joined in the first forming step, and the P-type element 20p fixed to the upper electrode 13 can be formed. As a result, the posture and position of the P-type element 20p are suppressed from fluctuating when the first intermediate 23 is taken out or transported, and the first intermediate 23 can be easily handled. Further, even when the bonding material 27 on the lower electrode 14 is melted in the bonding process, the P-type element 20p does not tilt or move.

また、第２形成工程においても、下電極１４の表面を融点近くまで加温することにより軟化させた後に、Ｎ型素子２０ｎを形成するため、第２中間体２６においても上記と同様の効果を得ることが可能になる。なお、上記実施の形態では、第１及び第２形成工程の両方で電極表面を軟化させた後に熱電素子を形成する構成としたが、いずれか一方の工程でのみ行う構成としてもよい。 Further, also in the second forming step, since the N-type element 20n is formed after the surface of the lower electrode 14 is softened by heating to near the melting point, the same effect as described above can be obtained in the second intermediate 26. It will be possible to obtain. In the above embodiment, the thermoelectric element is formed after the electrode surface is softened in both the first and second forming steps, but the configuration may be performed only in one of the steps.

・上電極１３に対する接合面２１の面積が下電極１４に対する接合面２２の面積よりも大きくなるように、熱電素子２０を構成した。この場合、熱電素子２０において高温側の入熱量と低温側の放熱量との差異を大きくすることができ、上端部２０ａと下端部２０ｂとの温度差を大きくすることが可能になる。特に、下基板１２を高温側基板とし、上基板１１を低温側基板とした場合には、下基板１２からの熱で下端部２０ｂ側が昇温しても、上端部２０ａ側は低温に維持されやすくなり、これら両端部２０ａ，２０ｂ間の温度差を好適に拡大することが可能になる。 The thermoelectric element 20 is configured so that the area of the joint surface 21 with respect to the upper electrode 13 is larger than the area of the joint surface 22 with respect to the lower electrode 14. In this case, in the thermoelectric element 20, the difference between the amount of heat input on the high temperature side and the amount of heat radiation on the low temperature side can be increased, and the temperature difference between the upper end portion 20a and the lower end portion 20b can be increased. In particular, when the lower substrate 12 is the high temperature side substrate and the upper substrate 11 is the low temperature side substrate, even if the lower end portion 20b side is heated by the heat from the lower substrate 12, the upper end portion 20a side is maintained at a low temperature. This facilitates the process and makes it possible to suitably increase the temperature difference between the both end portions 20a and 20b.

＜その他の実施の形態＞
本発明は上記実施の形態に限らず、例えば次のように実施されてもよい。 <Other embodiments>
The present invention is not limited to the above embodiment, and may be implemented as follows, for example.

（１）上記実施の形態では、熱電モジュール１０に温度差を付与して発電する構成としたが、各熱電素子２０をペルチェ素子として用い、各熱電素子２０に電流を流して温度差を発生させる調温装置（例えば冷却装置）を構成するものでもよい。 (1) In the above embodiment, the thermoelectric module 10 is provided with a temperature difference to generate electricity. However, each thermoelectric element 20 is used as a Peltier element, and a current is passed through each thermoelectric element 20 to generate a temperature difference. It may constitute a temperature control device (for example, a cooling device).

（２）上記実施の形態では、３次元造型機において粉末焼結方式により各熱電素子２０を形成したが、例えば、シート積層方式や指向性エネルギー堆積方式等の他の３次元造型方式により各熱電素子２０を形成してもよい。 (2) In the above embodiment, each thermoelectric element 20 is formed by a powder sintering method in a three-dimensional molding machine, but each thermoelectric element is formed by another three-dimensional molding method such as a sheet lamination method or a directed energy deposition method, for example. The element 20 may be formed.

（３）上記実施の形態では、電極が形成された基板を３次元造型機の内部に設置する構成としたが、基板上に形成されていない電極を設置する構成としてもよい。但し、この場合、個々の電極が分離状態にあるため、３次元造型機内への設置等に手間がかかる懸念があり、このような観点では上記実施の形態のように構成することが好ましい。 (3) In the above embodiment, the substrate on which the electrodes are formed is installed inside the three-dimensional molding machine, but an electrode that is not formed on the substrate may be installed. However, in this case, since the individual electrodes are in a separated state, there is a concern that it may take time and effort to install the electrodes in the three-dimensional molding machine, and from this viewpoint, it is preferable to configure the electrodes as in the above embodiment.

（４）上記実施の形態では、上電極１３の表面を軟化させてＰ型素子２０ｐとの接合を図る構成としたが、上電極１３の構成材料とＰ型素子２０ｐの構成材料との組み合わせによっては、両者の接合が困難な場合がある。このような場合には、第１設置工程の前に上電極１３上にはんだクリーム等の接合材を付しておき、第１設置工程において、接合材が付された上基板１１を３次元造型機内に設置するようにしてもよい。この場合、第１形成工程において接合材上に熱電素子２０が形成されるものとなり、接合材によって上電極１３とＰ型素子２０ｐとを接合することができる。 (4) In the above embodiment, the surface of the upper electrode 13 is softened to be bonded to the P-type element 20p, but the combination of the constituent material of the upper electrode 13 and the constituent material of the P-type element 20p is used. May be difficult to join the two. In such a case, a bonding material such as solder cream is attached on the upper electrode 13 before the first installation step, and the upper substrate 11 to which the bonding material is attached is three-dimensionally molded in the first installation step. It may be installed on board. In this case, the thermoelectric element 20 is formed on the bonding material in the first forming step, and the upper electrode 13 and the P-type element 20p can be bonded by the bonding material.

なお、上記接合材を、下電極１４及びＰ型素子２０ｐの接合に用いる接合材と同じものとすることで、後の接合工程において、上電極１３及びＰ型素子２０ｐの接合と、下電極１４及びＰ型素子２０ｐの接合とをまとめて行うことができ、製造工程を簡略化することが可能になる。また、電極上に接合材が付された基板の設置は、第２設置工程においても行うことができる。但し、必ずしも第１設置工程及び第２設置工程の両方で行う必要はなく、いずれか一方のみで行ってもよい。 By using the same joining material as the joining material used for joining the lower electrode 14 and the P-type element 20p, the upper electrode 13 and the P-type element 20p are joined and the lower electrode 14 is joined in a later joining step. And the joining of the P-type element 20p can be performed collectively, and the manufacturing process can be simplified. Further, the installation of the substrate having the bonding material on the electrodes can also be performed in the second installation step. However, it is not always necessary to perform it in both the first installation process and the second installation process, and it may be performed in only one of them.

（５）上記実施の形態において、第１形成工程の後に、上電極１３とＰ型素子２０ｐとの接合部の周囲に、はんだクリーム等の接合材を付してもよい。例えば、軟化接合によるＰ型素子２０ｐの保持力が不十分な場合に、接合材の粘性等によってそれをサポートすることができる。また、接合部の周囲に付した接合材は、後の接合工程において固化した場合、上電極１３とＰ型素子２０ｐとの接合に寄与するため、完成品である熱電モジュール１０における各Ｐ型素子２０ｐの接合力を強化することもできる。なお、接合材は、必ずしも接合部の周囲全体に付す必要はなく、少なくとも一部に付せばよい。また、上記構成は下電極１４とＮ型素子２０ｎとの関係においても適用することができるが、その際、Ｐ型素子２０ｐ又はＮ型素子２０ｎのいずれかのみで行ってもよい。 (5) In the above embodiment, after the first forming step, a bonding material such as solder cream may be attached around the bonding portion between the upper electrode 13 and the P-type element 20p. For example, when the holding force of the P-type element 20p due to softening is insufficient, it can be supported by the viscosity of the bonding material or the like. Further, since the bonding material attached around the bonding portion contributes to the bonding between the upper electrode 13 and the P-type element 20p when solidified in the subsequent bonding process, each P-type element in the finished thermoelectric module 10 It is also possible to strengthen the bonding force of 20p. The joining material does not necessarily have to be attached to the entire circumference of the joining portion, and may be attached to at least a part thereof. Further, the above configuration can be applied to the relationship between the lower electrode 14 and the N-type element 20n, but at that time, it may be performed only with either the P-type element 20p or the N-type element 20n.

（６）上記実施の形態において、第１設置工程に先立ち、レーザ光（熱電材料に合わせて波長設定されたレーザ光）に対する反射率についての熱電材料層２４との差分が、上電極１３よりも小さい導電材料層を上電極１３の表面に形成してもよい。すなわち、上電極１３が、第２導電層と、第２導電層上に設けられ、熱電材料層２４との反射率の差分が第２導電層よりも小さい第１導電層とを備えており、第１導電層上にＰ型素子２０ｐが形成される構成としてもよい。レーザ光に対する熱電材料層２４の反射率と上電極１３の反射率とが大きく異なる場合、レーザ照射による両者の接合が困難となるおそれがあるが、上記のように、反射率を近づけてレーザ照射を行うことで、接合が容易となることを期待できる。 (6) In the above embodiment, prior to the first installation step, the difference in reflectance with respect to the laser light (laser light whose wavelength is set according to the thermoelectric material) with that of the thermoelectric material layer 24 is larger than that of the upper electrode 13. A small conductive material layer may be formed on the surface of the upper electrode 13. That is, the upper electrode 13 is provided on the second conductive layer and the second conductive layer, and includes a first conductive layer in which the difference in reflectance from the thermoelectric material layer 24 is smaller than that of the second conductive layer. The P-type element 20p may be formed on the first conductive layer. If the reflectance of the thermoelectric material layer 24 with respect to the laser light and the reflectance of the upper electrode 13 are significantly different, it may be difficult to join the two by laser irradiation. It can be expected that joining will be facilitated by performing.

なお、上電極１３（第２導電層）の構成材料を銅とした場合、第１導電層は、例えば、当該電極１３上にニッケルメッキ処理を行うことで形成するとよい。また、上記構成は、下電極１４についても適用することができるが、その際、上電極１３又は下電極１４のいずれかのみで行ってもよい。 When the constituent material of the upper electrode 13 (second conductive layer) is copper, the first conductive layer may be formed, for example, by subjecting the electrode 13 to a nickel plating treatment. Further, the above configuration can be applied to the lower electrode 14, but at that time, either the upper electrode 13 or the lower electrode 14 may be used alone.

（７）上記実施の形態では、第１中間体２３の上電極１３と第２中間体２６の下電極１４とのそれぞれに接合材を塗布したが、第１中間体２３の上電極１３と、第１中間体２３におけるＰ型素子２０ｐの接合面２２ｐとに接合材を塗布し、第２中間体２６側には塗布しないようにしてもよい。この場合、一方の中間体にのみ塗布作業を行えば済むため、工程を簡略化することができる。なお、上記とは逆に、第２中間体２６に対して塗布作業を行ってもよい。 (7) In the above embodiment, the bonding material is applied to the upper electrode 13 of the first intermediate 23 and the lower electrode 14 of the second intermediate 26, respectively. The bonding material may be applied to the bonding surface 22p of the P-type element 20p in the first intermediate 23, and may not be applied to the second intermediate 26 side. In this case, since the coating work only needs to be performed on one of the intermediates, the process can be simplified. In addition, contrary to the above, the coating work may be performed on the second intermediate 26.

（８）上記実施の形態では、熱電素子２０を角錐台形状としたが、円錐台形状としてもよい。また、図６（ａ）に示すように、熱電素子２０の側面部２０ｃに溝部３３を形成して凹凸を設けたり、側面部２０ｃを曲面で構成したりしてもよい。これにより、側面部２０ｃの表面積を拡大して放熱効果を高めることができ、両端部２０ａ，２０ｂ間の温度差を一層大きくすることが可能になる。 (8) In the above embodiment, the thermoelectric element 20 has a truncated cone shape, but it may have a truncated cone shape. Further, as shown in FIG. 6A, a groove 33 may be formed on the side surface portion 20c of the thermoelectric element 20 to provide unevenness, or the side surface portion 20c may be formed of a curved surface. As a result, the surface area of the side surface portion 20c can be increased to enhance the heat dissipation effect, and the temperature difference between both end portions 20a and 20b can be further increased.

なお、凹凸や曲面は、択一的なものではなく、両方を組み合わせて用いてもよい。また、これらは必ずしも側面部２０ｃの全体に形成する必要はなく、一部に形成してもよい。さらに、溝部３３は螺旋溝に限らず、縦溝等の他の溝形状であってもよい。ちなみに、凹凸や曲面を採用した上記変形例は、本発明の「錐台形状」に含まれるものである。すなわち、本発明の「錐台形状」は、完全な錐台形状に限定されるものではなく、全体として概ね錐台形状であるものを含む概念である。 The unevenness and the curved surface are not alternative, and both may be used in combination. Further, these do not necessarily have to be formed on the entire side surface portion 20c, and may be formed on a part thereof. Further, the groove portion 33 is not limited to the spiral groove, and may have another groove shape such as a vertical groove. Incidentally, the above-mentioned modified example adopting the unevenness and the curved surface is included in the "frustum shape" of the present invention. That is, the "frustum shape" of the present invention is not limited to a perfect frustum shape, but is a concept including a frustum shape as a whole.

また、図６（ｂ）に示すように、熱電素子２０の内部に空洞部３４を設け、素子内側に放熱面（放熱部）を確保する構成としてもよい。 Further, as shown in FIG. 6B, a cavity 34 may be provided inside the thermoelectric element 20 to secure a heat radiating surface (heat radiating portion) inside the element.

１０…熱電モジュール、１３…上電極、１４…下電極、２０…熱電素子、２０ｐ…Ｐ型素子、２０ｎ…Ｎ型素子、２１…接合面、２２…接合面、２３…第１中間体、２６…第２中間体。 10 ... Thermoelectric module, 13 ... Upper electrode, 14 ... Lower electrode, 20 ... Thermoelectric element, 20p ... P-type element, 20n ... N-type element, 21 ... Joint surface, 22 ... Joint surface, 23 ... First intermediate, 26 … The second intermediate.

Claims (4)

３次元造型機の内部に第１電極を設置する第１設置工程と、
前記第１電極上にＰ型とＮ型とのうちの一方である熱電特性を有する第１熱電素子を、前記３次元造型機により光を照射して形成して、第１中間体を生成する第１形成工程と、
３次元造型機の内部に第２電極を設置する第２設置工程と、
前記第２電極上にＰ型とＮ型とのうちの他方である熱電特性を有する第２熱電素子を、前記３次元造型機により光を照射して形成して、第２中間体を生成する第２形成工程と、
前記第１中間体の前記第１熱電素子を前記第２中間体の前記第２電極に接合し、前記第２中間体の前記第２熱電素子を前記第１中間体の前記第１電極に接合する接合工程と、
を備え、
前記第１形成工程において、前記第１熱電素子を形成するために照射する光により前記第１電極の表面を融点近くまで加温することにより軟化させ、前記第１電極上に前記第１熱電素子を形成する、
または、前記第２形成工程において、前記第２熱電素子を形成するために照射する光により前記第２電極の表面を融点近くまで加温することにより軟化させ、前記第２電極上に前記第２熱電素子を形成することを特徴とする熱電モジュールの製造方法。 The first installation process of installing the first electrode inside the 3D molding machine, and
A first thermoelectric element having one of P-type and N-type thermoelectric characteristics is formed on the first electrode by irradiating light with the three-dimensional molding machine to generate a first intermediate. The first forming process and
The second installation process of installing the second electrode inside the 3D molding machine, and
A second thermoelectric element having thermoelectric characteristics, which is the other of P-type and N-type, is formed on the second electrode by irradiating light with the three-dimensional molding machine to generate a second intermediate. The second formation process and
Joining the first thermoelectric element of the first intermediate to said second electrode of said second intermediate, bonding the second thermoelectric element of the second intermediate to the first electrode of the first intermediate Joining process and
Equipped with a,
In the first forming step, the surface of the first electrode is softened by heating it to near the melting point with light irradiated to form the first thermoelectric element, and the first thermoelectric element is placed on the first electrode. Form,
Alternatively, in the second forming step, the surface of the second electrode is softened by heating it to near the melting point with the light irradiated to form the second thermoelectric element, and the second electrode is placed on the second electrode. A method for manufacturing a thermoelectric module, which comprises forming a thermoelectric element. 前記第１形成工程において前記第１電極上に前記第１熱電素子を形成した後、前記接合工程の前に、前記第１電極に対する前記第１熱電素子の接合部における周囲部の少なくとも一部に接合材を付す、After forming the first thermoelectric element on the first electrode in the first forming step, and before the joining step, at least a part of the peripheral portion in the joining portion of the first thermoelectric element with respect to the first electrode. Attach the joint material,
または、前記第２形成工程において前記第２電極上に前記第２熱電素子を形成した後、前記接合工程の前に、前記第２電極に対する前記第２熱電素子の接合部における周囲部の少なくとも一部に接合材を付す、Alternatively, after forming the second thermoelectric element on the second electrode in the second forming step, and before the joining step, at least one of the peripheral portions in the joint portion of the second thermoelectric element with respect to the second electrode. Attach a joint material to the part,
請求項１に記載の熱電モジュールの製造方法。The method for manufacturing a thermoelectric module according to claim 1. ３次元造型機の内部に第１電極を設置する第１設置工程と、The first installation process of installing the first electrode inside the 3D molding machine, and
前記第１電極上にＰ型とＮ型とのうちの一方である熱電特性を有する第１熱電素子を、前記３次元造型機により形成して、第１中間体を生成する第１形成工程と、A first forming step of forming a first thermoelectric element having a thermoelectric characteristic, which is one of P-type and N-type, on the first electrode by the three-dimensional molding machine to generate a first intermediate. ,
３次元造型機の内部に第２電極を設置する第２設置工程と、The second installation process of installing the second electrode inside the 3D molding machine, and
前記第２電極上にＰ型とＮ型とのうちの他方である熱電特性を有する第２熱電素子を、前記３次元造型機により形成して、第２中間体を生成する第２形成工程と、A second forming step of forming a second thermoelectric element having thermoelectric characteristics, which is the other of P-type and N-type, on the second electrode by the three-dimensional molding machine to generate a second intermediate. ,
前記第１中間体の前記第１熱電素子を前記第２中間体の前記第２電極に接合し、前記第２中間体の前記第２熱電素子を前記第１中間体の前記第１電極に接合する接合工程と、The first thermoelectric element of the first intermediate is bonded to the second electrode of the second intermediate, and the second thermoelectric element of the second intermediate is bonded to the first electrode of the first intermediate. Joining process and
を備え、With
前記第１形成工程において、前記第１電極の表面を融点近くまで加温することにより軟化させ、前記第１電極上に前記第１熱電素子を形成し、その後、前記接合工程の前に、前記第１電極に対する前記第１熱電素子の接合部における周囲部の少なくとも一部に接合材を付す、In the first forming step, the surface of the first electrode is softened by heating to near the melting point to form the first thermoelectric element on the first electrode, and then, before the joining step, the said A bonding material is attached to at least a part of the peripheral portion of the bonding portion of the first thermoelectric element with respect to the first electrode.
または、前記第２形成工程において、前記第２電極の表面を融点近くまで加温することにより軟化させ、前記第２電極上に前記第２熱電素子を形成し、その後、前記接合工程の前に、前記第２電極に対する前記第２熱電素子の接合部における周囲部の少なくとも一部に接合材を付すことを特徴とする熱電モジュールの製造方法。Alternatively, in the second forming step, the surface of the second electrode is softened by heating to near the melting point to form the second thermoelectric element on the second electrode, and then before the joining step. , A method for manufacturing a thermoelectric module, which comprises attaching a bonding material to at least a part of a peripheral portion in a bonding portion of the second thermoelectric element with respect to the second electrode. 前記第１形成工程において、前記第１熱電素子は、前記第１電極側の接合面の面積が前記第２電極側の接合面の面積よりも大きく形成される、
または、前記第２形成工程において、前記第２熱電素子は、前記第１電極側の接合面の面積が前記第２電極側の接合面の面積よりも大きく形成される、
請求項１〜３のいずれか１項に記載の熱電モジュールの製造方法。 In the first forming step, the first thermoelectric element is formed so that the area of the joint surface on the first electrode side is larger than the area of the joint surface on the second electrode side.
Alternatively, in the second forming step, the area of the joint surface on the first electrode side of the second thermoelectric element is formed to be larger than the area of the joint surface on the second electrode side.
The method for manufacturing a thermoelectric module according to any one of claims 1 to 3.
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