JP6833704B2 - 垂直共振器面発光レーザ - Google Patents
垂直共振器面発光レーザ Download PDFInfo
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- JP6833704B2 JP6833704B2 JP2017546230A JP2017546230A JP6833704B2 JP 6833704 B2 JP6833704 B2 JP 6833704B2 JP 2017546230 A JP2017546230 A JP 2017546230A JP 2017546230 A JP2017546230 A JP 2017546230A JP 6833704 B2 JP6833704 B2 JP 6833704B2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 29
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 27
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 9
- 239000002086 nanomaterial Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 61
- 238000000034 method Methods 0.000 description 12
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000002500 ions Chemical group 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Description
それぞれのアンチモン化ガリウム量子リングは砒化ガリウム量子井戸内に配置される。
それぞれのアンチモン化ガリウム量子井戸は、活性領域と第1ミラー領域との間の第1追加層、及び、活性領域と第2ミラー領域との間の第2追加層により提供され得る。
また、第1追加層及び第2追加層は、ガリウム及びアルミニウムの組成勾配を有する。
この組成勾配はほぼ直線的である。
第1追加層及び第2追加層内で、アルミニウムの第3族原子分率は、活性領域に近い側での低い値から活性領域から遠い側での高い値へと増加する。
好ましくは、低い値は0.25から0.35の間であり、高い値は0.55から0.65の間である。より好ましくは、低い値は0.3であり、高い値は0.6である。
装置の構造は広く商業的に入手可能な結晶固体の砒化ガリウム基板(104)から開始する。
活性領域(108)は10ナノメートルの非ドープの砒化ガリウムの第1の層(202)を含む。その後に、通常2.1単原子層の非ドープのアンチモン化ガリウム(およそ0.6nm)を含む第2の層(204)、5ナノメートルの「冷間キャップの」非ドープの砒化ガリウムの第3の層(206)、及び、更に5ナノメートルの非ドープの砒化ガリウムの第4の層(208)が続く。
この後に、砒化アルミニウム(0.9)ガリウム(0.1)を含む第2のDBRミラー領域(112)の第3の(低い屈折率の)層(層「D」、図1の黒い部分)が続く。これは、1立方センチメートル当たり3×1018ドーパント原子のレベルまで(例えばベリリウム又は炭素で)p型ドーピングされ、112.2ナノメートルの厚さを有する。
各DBRミラー領域(106、112)の正確な期間(層)の数は重要ではない。しかし、あまりにも少ない層の構造ではレーザが発振閾値状態に到達するのを妨げ、あまりにも多い層では光子吸収を通してレーザ性能を低下させ得る。間違った方向への(即ち基板(104)に向かう)発光を避けるため、第2DBRミラー領域(112)よりも第1DBRミラー領域(106)の層数が多いことが好ましい。
その後、構造は、1立方センチメートル当たり少なくとも1×1019ドーパント原子のレベルまで(例えばベリリウム又は炭素で)p型ドーピングされ、98.5ナノメートルの厚さを有する砒化ガリウムを含む接触層(116)の追加により完成される。
・砒化ガリウム(105、106‐B、112‐C、114、202、208):580℃、1単分子層/秒(砒素対ガリウムの比=1.7)
・「冷間キャップの」砒化ガリウム(206):430℃、1単分子層/秒(砒素対ガリウムの比=5)
・砒化アルミニウムガリウム(106‐A、107、111、112‐D):600℃、1単分子層/秒(第5群対第3群の比=2)
・砒化ガリウム(204):490℃、0.3単分子層/秒(アンチモン対ガリウム原子の比=10)
104・・・・・・・基板
105、114・・・緩衝層
106・・・・・・・第1ミラー領域
108・・・・・・・活性領域
110・・・・・・・活性レーザ装置
112・・・・・・・第2ミラー領域
Claims (10)
- 少なくとも基板と、電気接点と、第1ミラー領域と、第2ミラー領域と、前記第1ミラー領域及び前記第2ミラー領域の間の活性領域と、を含む垂直共振器面発光レーザであって、
前記第1ミラー領域及び前記第2ミラー領域は、複数の層から形成される分散型のブラッグ反射器を含み、
レーザ発光は、前記活性領域の少なくとも1つの砒化アンチモン化ガリウムのナノ構造から放出され、
それぞれのナノ構造は砒素原子よりもアンチモン原子を多く含み、
それぞれのナノ構造はアンチモン化ガリウム量子リングを有し、
それぞれの前記アンチモン化ガリウム量子リングは砒化ガリウム量子井戸内に配置される、垂直共振器面発光レーザ。 - それぞれの前記砒化ガリウム量子井戸は、前記活性領域と前記第1ミラー領域との間の第1追加層、及び、前記活性領域と前記第2ミラー領域との間の第2追加層により提供される、請求項1に記載の垂直共振器面発光レーザ。
- 前記第1追加層及び前記第2追加層は、砒化アルミニウムガリウムを含む、請求項2に記載の垂直共振器面発光レーザ。
- 前記第1追加層及び前記第2追加層は、ガリウム及びアルミニウムの組成勾配を含む、請求項3に記載の垂直共振器面発光レーザ。
- 前記組成勾配は直線的である、請求項4に記載の垂直共振器面発光レーザ。
- 前記第1追加層及び前記第2追加層内で、アルミニウムの第3族原子分率は、前記活性領域に近い側での低い値から前記活性領域から遠い側での高い値へと増加する、請求項4に記載の垂直共振器面発光レーザ。
- 前記低い値は0.25から0.35の間であり、前記高い値は0.55から0.65の間である、請求項6に記載の垂直共振器面発光レーザ。
- 前記低い値は0.3であり、前記高い値は0.6である、請求項7に記載の垂直共振器面発光レーザ。
- 1260から1675nmの範囲内の波長を有するレーザ発光を生成する、請求項1から8の何れか一項に記載の垂直共振器面発光レーザ。
- 能動冷却の必要無しに動作する、請求項9に記載の垂直共振器面発光レーザ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1503498.6 | 2015-03-02 | ||
GB201503498A GB201503498D0 (en) | 2015-03-02 | 2015-03-02 | Vertical-cavity surface-emitting laser |
PCT/GB2016/050550 WO2016139473A1 (en) | 2015-03-02 | 2016-03-02 | Vertical-cavity surface-emitting laser |
Publications (3)
Publication Number | Publication Date |
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JP2018507564A JP2018507564A (ja) | 2018-03-15 |
JP2018507564A5 JP2018507564A5 (ja) | 2020-08-27 |
JP6833704B2 true JP6833704B2 (ja) | 2021-02-24 |
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JP2017546230A Active JP6833704B2 (ja) | 2015-03-02 | 2016-03-02 | 垂直共振器面発光レーザ |
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Country | Link |
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US (1) | US10938178B2 (ja) |
EP (1) | EP3266080B1 (ja) |
JP (1) | JP6833704B2 (ja) |
KR (1) | KR102231085B1 (ja) |
GB (1) | GB201503498D0 (ja) |
WO (1) | WO2016139473A1 (ja) |
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GB201703594D0 (en) * | 2017-03-07 | 2017-04-19 | Univ Of Lancaster | Single photon source |
US10777970B2 (en) * | 2018-09-04 | 2020-09-15 | Samsung Electronics Co., Ltd. | Metamaterial-based reflector, optical cavity structure including the same and vertical cavity surface emitting laser |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2558768B2 (ja) * | 1987-12-29 | 1996-11-27 | シャープ株式会社 | 半導体レーザ装置 |
JP3219823B2 (ja) * | 1991-02-04 | 2001-10-15 | 株式会社東芝 | 半導体発光素子 |
JP2783947B2 (ja) * | 1992-08-25 | 1998-08-06 | 沖電気工業株式会社 | 半導体レーザ |
JP3672678B2 (ja) * | 1996-04-05 | 2005-07-20 | 富士通株式会社 | 量子半導体装置およびその製造方法 |
US5805624A (en) | 1996-07-30 | 1998-09-08 | Hewlett-Packard Company | Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate |
US6600169B2 (en) * | 2000-09-22 | 2003-07-29 | Andreas Stintz | Quantum dash device |
US7065124B2 (en) * | 2000-11-28 | 2006-06-20 | Finlsar Corporation | Electron affinity engineered VCSELs |
US6782021B2 (en) * | 2001-03-02 | 2004-08-24 | Xiaodong Huang | Quantum dot vertical cavity surface emitting laser |
US6801558B2 (en) * | 2002-06-14 | 2004-10-05 | Agilent Technologies, Inc. | Material systems for long wavelength lasers grown on InP substrates |
US20060013276A1 (en) * | 2004-07-15 | 2006-01-19 | Mchugo Scott A | VCSEL having an air gap and protective coating |
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2015
- 2015-03-02 GB GB201503498A patent/GB201503498D0/en not_active Ceased
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2016
- 2016-03-02 US US15/552,746 patent/US10938178B2/en active Active
- 2016-03-02 KR KR1020177027630A patent/KR102231085B1/ko active IP Right Grant
- 2016-03-02 WO PCT/GB2016/050550 patent/WO2016139473A1/en active Application Filing
- 2016-03-02 EP EP16709512.4A patent/EP3266080B1/en active Active
- 2016-03-02 JP JP2017546230A patent/JP6833704B2/ja active Active
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Publication number | Publication date |
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KR20180011063A (ko) | 2018-01-31 |
US20180054041A1 (en) | 2018-02-22 |
GB201503498D0 (en) | 2015-04-15 |
EP3266080B1 (en) | 2020-08-26 |
JP2018507564A (ja) | 2018-03-15 |
US10938178B2 (en) | 2021-03-02 |
EP3266080A1 (en) | 2018-01-10 |
WO2016139473A1 (en) | 2016-09-09 |
KR102231085B1 (ko) | 2021-03-23 |
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