JP6823799B2 - 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 - Google Patents

電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 Download PDF

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Publication number: JP6823799B2
Authority: JP; Japan
Prior art keywords: coating layer; atomic; sputtering target; target material; film
Prior art date: 2015-10-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2016178563A

Other languages

English (en)

Japanese (ja)

Other versions

JP2017066519A (ja

Inventor

村田　英夫

英夫村田

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Metals Ltd

Original Assignee

Hitachi Metals Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-10-01

Filing date

2016-09-13

Publication date

2021-02-03

2016-09-13 Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd

2017-04-06 Publication of JP2017066519A publication Critical patent/JP2017066519A/ja

2021-02-03 Application granted granted Critical

2021-02-03 Publication of JP6823799B2 publication Critical patent/JP6823799B2/ja

Status Active legal-status Critical Current

2036-09-13 Anticipated expiration legal-status Critical

Links

239000011247 coating layer Substances 0.000 title claims description 97
238000005477 sputtering target Methods 0.000 title claims description 44
239000013077 target material Substances 0.000 title claims description 41
230000015572 biosynthetic process Effects 0.000 title description 2
239000010410 layer Substances 0.000 claims description 46
229910052802 copper Inorganic materials 0.000 claims description 35
229910052748 manganese Inorganic materials 0.000 claims description 35
229910052759 nickel Inorganic materials 0.000 claims description 31
229910000838 Al alloy Inorganic materials 0.000 claims description 16
239000012535 impurity Substances 0.000 claims description 16
229910052782 aluminium Inorganic materials 0.000 claims description 9
229910052720 vanadium Inorganic materials 0.000 claims description 9
229910052758 niobium Inorganic materials 0.000 claims description 8
229910052719 titanium Inorganic materials 0.000 claims description 7
229910052804 chromium Inorganic materials 0.000 claims description 6
229910052715 tantalum Inorganic materials 0.000 claims description 6
229910052721 tungsten Inorganic materials 0.000 claims description 6
239000011248 coating agent Substances 0.000 claims 1
238000000576 coating method Methods 0.000 claims 1
239000010408 film Substances 0.000 description 80
239000010949 copper Substances 0.000 description 48
239000000758 substrate Substances 0.000 description 36
230000003647 oxidation Effects 0.000 description 25
238000007254 oxidation reaction Methods 0.000 description 25
239000000843 powder Substances 0.000 description 24
238000005530 etching Methods 0.000 description 21
238000000034 method Methods 0.000 description 21
238000001039 wet etching Methods 0.000 description 21
230000007797 corrosion Effects 0.000 description 20
238000005260 corrosion Methods 0.000 description 20
229910045601 alloy Inorganic materials 0.000 description 18
239000000956 alloy Substances 0.000 description 18
239000000203 mixture Substances 0.000 description 18
229910052750 molybdenum Inorganic materials 0.000 description 17
239000011521 glass Substances 0.000 description 12
238000004544 sputter deposition Methods 0.000 description 10
238000004519 manufacturing process Methods 0.000 description 7
239000011347 resin Substances 0.000 description 7
229920005989 resin Polymers 0.000 description 7
230000000052 comparative effect Effects 0.000 description 6
230000007423 decrease Effects 0.000 description 6
238000005245 sintering Methods 0.000 description 6
239000006104 solid solution Substances 0.000 description 6
239000002390 adhesive tape Substances 0.000 description 5
239000000470 constituent Substances 0.000 description 5
239000002994 raw material Substances 0.000 description 5
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
230000006866 deterioration Effects 0.000 description 4
230000000694 effects Effects 0.000 description 4
238000011156 evaluation Methods 0.000 description 4
229910052751 metal Inorganic materials 0.000 description 4
239000002184 metal Substances 0.000 description 4
239000002245 particle Substances 0.000 description 4
239000000047 product Substances 0.000 description 4
239000010409 thin film Substances 0.000 description 4
239000003981 vehicle Substances 0.000 description 4
QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
229910001182 Mo alloy Inorganic materials 0.000 description 3
229910000990 Ni alloy Inorganic materials 0.000 description 3
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
238000002845 discoloration Methods 0.000 description 3
238000002844 melting Methods 0.000 description 3
230000008018 melting Effects 0.000 description 3
238000002156 mixing Methods 0.000 description 3
229910052760 oxygen Inorganic materials 0.000 description 3
239000001301 oxygen Substances 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
230000003796 beauty Effects 0.000 description 2
229910052799 carbon Inorganic materials 0.000 description 2
230000002706 hydrostatic effect Effects 0.000 description 2
229910000765 intermetallic Inorganic materials 0.000 description 2
239000004973 liquid crystal related substance Substances 0.000 description 2
230000007774 longterm Effects 0.000 description 2
239000000463 material Substances 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
235000014593 oils and fats Nutrition 0.000 description 2
150000003839 salts Chemical class 0.000 description 2
229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 2
229910001209 Low-carbon steel Inorganic materials 0.000 description 1
229910017318 Mo—Ni Inorganic materials 0.000 description 1
229910001257 Nb alloy Inorganic materials 0.000 description 1
229910018054 Ni-Cu Inorganic materials 0.000 description 1
229910003286 Ni-Mn Inorganic materials 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
229910018481 Ni—Cu Inorganic materials 0.000 description 1
238000005275 alloying Methods 0.000 description 1
229910000147 aluminium phosphate Inorganic materials 0.000 description 1
238000000149 argon plasma sintering Methods 0.000 description 1
238000005266 casting Methods 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
238000010411 cooking Methods 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000001803 electron scattering Methods 0.000 description 1
238000001125 extrusion Methods 0.000 description 1
238000005187 foaming Methods 0.000 description 1
238000009689 gas atomisation Methods 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
229910052735 hafnium Inorganic materials 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
238000007731 hot pressing Methods 0.000 description 1
230000001771 impaired effect Effects 0.000 description 1
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
238000007733 ion plating Methods 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
238000003754 machining Methods 0.000 description 1
239000000696 magnetic material Substances 0.000 description 1
230000005389 magnetism Effects 0.000 description 1
238000001755 magnetron sputter deposition Methods 0.000 description 1
239000011572 manganese Substances 0.000 description 1
229910052752 metalloid Inorganic materials 0.000 description 1
150000002738 metalloids Chemical class 0.000 description 1
239000011812 mixed powder Substances 0.000 description 1
PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
239000012466 permeate Substances 0.000 description 1
238000010587 phase diagram Methods 0.000 description 1
238000005240 physical vapour deposition Methods 0.000 description 1
238000003825 pressing Methods 0.000 description 1
238000010298 pulverizing process Methods 0.000 description 1
239000002356 single layer Substances 0.000 description 1
239000000243 solution Substances 0.000 description 1
239000000126 substance Substances 0.000 description 1
238000006467 substitution reaction Methods 0.000 description 1
238000010301 surface-oxidation reaction Methods 0.000 description 1
230000009466 transformation Effects 0.000 description 1
229910052723 transition metal Inorganic materials 0.000 description 1
150000003624 transition metals Chemical class 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
229910052726 zirconium Inorganic materials 0.000 description 1

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/14—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by a layer differing constitutionally or physically in different parts, e.g. denser near its faces
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/023—Alloys based on aluminium
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B1/00—Layered products having a non-planar shape
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/061—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of metal
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Mechanical Engineering (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Physical Vapour Deposition (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Electrodes Of Semiconductors (AREA)

JP2016178563A 2015-10-01 2016-09-13 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 Active JP6823799B2 (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2015195763		2015-10-01
JP2015195763		2015-10-01

Publications (2)

Publication Number	Publication Date
JP2017066519A JP2017066519A (ja)	2017-04-06
JP6823799B2 true JP6823799B2 (ja)	2021-02-03

Family

ID=58491991

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2016178563A Active JP6823799B2 (ja)	2015-10-01	2016-09-13	電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材

Country Status (4)

Country	Link
JP (1)	JP6823799B2 (zh)
KR (2)	KR20170039582A (zh)
CN (1)	CN107039097B (zh)
TW (1)	TWI604066B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP7110749B2 (ja) *	2017-07-05	2022-08-02	日立金属株式会社	ＭｏＮｂターゲット材
TWI641001B (zh) *	2018-01-22	2018-11-11	國立屏東科技大學	薄膜電阻合金
KR102474944B1 (ko) *	2020-04-08	2022-12-06	주식회사 큐프럼 머티리얼즈	배선막 제조 방법, 배선막 및 이를 포함하는 표시 장치
WO2023145440A1 (ja) *	2022-01-31	2023-08-03	株式会社プロテリアル	フィルム配線の製造方法
CN114855131A (zh) *	2022-05-23	2022-08-05	安泰天龙(北京)钨钼科技有限公司	一种钼合金靶材制备方法、钼合金靶材和应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3859119B2 (ja)	2000-12-22	2006-12-20	日立金属株式会社	電子部品用薄膜配線
CN101521249B (zh) *	2002-09-30	2012-05-23	米亚索尔公司	薄膜太阳能电池大规模生产的制造装置与方法
JP3649238B2 (ja) *	2002-10-17	2005-05-18	旭硝子株式会社	積層体、配線付き基体、有機ｅｌ表示素子、有機ｅｌ表示素子の接続端子及びそれらの製造方法
WO2005041290A1 (ja) *	2003-10-24	2005-05-06	Nikko Materials Co., Ltd.	ニッケル合金スパッタリングターゲット及びニッケル合金薄膜
JP4730662B2 (ja)	2005-03-02	2011-07-20	日立金属株式会社	薄膜配線層
JP5532767B2 (ja) *	2009-09-04	2014-06-25	大同特殊鋼株式会社	Ｃｕ電極保護膜用ＮｉＣｕ合金ターゲット材
JP6016083B2 (ja)	2011-08-19	2016-10-26	日立金属株式会社	電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP2013133489A (ja) *	2011-12-26	2013-07-08	Sumitomo Metal Mining Co Ltd	Ｃｕ合金スパッタリングターゲット、この製造方法及び金属薄膜
JP6026261B2 (ja) *	2012-12-19	2016-11-16	山陽特殊製鋼株式会社	Ｃｕ系磁気記録用合金およびスパッタリングターゲット材並びにそれを使用した垂直磁気記録媒体
JP6292466B2 (ja) *	2013-02-20	2018-03-14	日立金属株式会社	金属薄膜および金属薄膜形成用Ｍｏ合金スパッタリングターゲット材
JP6361957B2 (ja) *	2013-03-22	2018-07-25	日立金属株式会社	電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP6380837B2 (ja) *	2013-08-21	2018-08-29	日立金属株式会社	被覆層形成用スパッタリングターゲット材およびその製造方法
JP6369750B2 (ja) *	2013-09-10	2018-08-08	日立金属株式会社	積層配線膜およびその製造方法ならびにＮｉ合金スパッタリングターゲット材

2016
- 2016-09-13 JP JP2016178563A patent/JP6823799B2/ja active Active
- 2016-09-26 TW TW105130937A patent/TWI604066B/zh active
- 2016-09-28 KR KR1020160124601A patent/KR20170039582A/ko active Application Filing
- 2016-09-29 CN CN201610866976.6A patent/CN107039097B/zh active Active
2019
- 2019-01-22 KR KR1020190008075A patent/KR102032085B1/ko active IP Right Grant

Also Published As

Publication number	Publication date
CN107039097A (zh)	2017-08-11
KR20170039582A (ko)	2017-04-11
TWI604066B (zh)	2017-11-01
TW201715054A (zh)	2017-05-01
JP2017066519A (ja)	2017-04-06
KR102032085B1 (ko)	2019-10-14
CN107039097B (zh)	2019-04-23
KR20190010701A (ko)	2019-01-30

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Publication	Publication Date	Title
JP6823799B2 (ja)	2021-02-03	電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP6369750B2 (ja)	2018-08-08	積層配線膜およびその製造方法ならびにＮｉ合金スパッタリングターゲット材
TWI583801B (zh)	2017-05-21	A sputtering target for forming a wiring film for an electronic component and a coating layer material
JP6284004B2 (ja)	2018-02-28	Ｍｏ合金スパッタリングターゲット材の製造方法およびＭｏ合金スパッタリングターゲット材
JP6016083B2 (ja)	2016-10-26	電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP5958822B2 (ja)	2016-08-02	Ｍｏ合金スパッタリングターゲット材の製造方法およびＭｏ合金スパッタリングターゲット材
TWI576454B (zh)	2017-04-01	Spraying target for forming wiring film and coating layer for electronic parts
JP6292471B2 (ja)	2018-03-14	電子部品用金属薄膜および金属薄膜形成用Ｍｏ合金スパッタリングターゲット材
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