JP6813263B2 - Wiring boards, semiconductor device packages and semiconductor devices - Google Patents

Description

本発明は、差動信号を伝送する配線基板、該配線基板を備える半導体素子パッケージおよび半導体装置に関する。 The present invention relates to a wiring board for transmitting a differential signal, a semiconductor element package including the wiring board, and a semiconductor device.

光伝送を利用することで信号通信は、大幅に高速化され、電気信号の伝送も高速化されている。高速化伝送に適した伝送方式として、差動線路伝送方式が用いられる。差動線路方式は、逆位相の高周波信号を一対の伝送線路によって伝送し、伝送先で２つの信号から電位差を検出する。一対の伝送線路による伝送中にノイズが混入しても、電位差を検出することで、混入したノイズがキャンセルされるので、ノイズ耐性の高い信号伝送が実現できる。 By using optical transmission, signal communication has been significantly speeded up, and electrical signal transmission has also been speeded up. A differential line transmission method is used as a transmission method suitable for high-speed transmission. In the differential line system, high-frequency signals having opposite phases are transmitted by a pair of transmission lines, and a potential difference is detected from the two signals at the transmission destination. Even if noise is mixed during transmission by a pair of transmission lines, the mixed noise is canceled by detecting the potential difference, so that signal transmission with high noise immunity can be realized.

一対の差動線路は、誘電体基板上に一定の間隔を空けて平行に配設され、信号が伝送されると、互いに結合して所定のインピーダンスとなるように線路設計される。しかしながら、一対の伝送路の一方端部側と他方端部側とでは、接続される回路や電子部品が異なるので、端部における線路間の間隔を接続先に応じて変更すると、一方端部側と他方端部側とで間隔が異なる場合がある。たとえば、一方端部側での間隔よりも他方端部側での間隔が大きくなる。 The pair of differential lines are arranged in parallel on the dielectric substrate at regular intervals, and when a signal is transmitted, the lines are designed so that they are coupled to each other to have a predetermined impedance. However, since the circuits and electronic components to be connected differ between one end side and the other end side of the pair of transmission lines, if the distance between the lines at the end is changed according to the connection destination, the one end side And the other end side may have different intervals. For example, the distance on the other end side is larger than the distance on the one end side.

特許文献１記載のプリント配線板は、差動伝送線路が拡開する線路開口部において、線路間に帰還電流パターンを設け、差動インピーダンスを整合させた一方端部と他方端部とで差動線路の間隔が異なるプリント配線板としている。 In the printed wiring board described in Patent Document 1, a feedback current pattern is provided between the lines at the line opening where the differential transmission line expands, and the differential impedance is matched between one end and the other end. It is a printed wiring board with different track spacing.

特開２００７−３２４５１１号公報JP-A-2007-324511

高周波差動線路の場合は、２本の信号配線（Ｓ）に差動信号を伝送させ、その両側に沿って接地配線（Ｇ）を設けることで、差動信号を安定して伝送させている。 In the case of a high-frequency differential line, the differential signal is transmitted to the two signal wirings (S), and the ground wiring (G) is provided along both sides of the two signal wirings (S) to stably transmit the differential signal. ..

このように、高周波差動線路は、Ｇ−Ｓ−Ｓ−Ｇと並べて配置する場合が多い。これに対し、Ｇ−Ｓ−Ｇ−Ｓ−Ｇと配置する差動線路もある。一端にＧ−Ｓ−Ｓ−Ｇの差動線路を接続し、他端にＧ−Ｓ−Ｇ−Ｓ−Ｇ配置を有する差動線路を接続する場合は、両端部において配線の配置が異なっているのでそのまま接続することができない。 In this way, the high-frequency differential line is often arranged side by side with the GSS-G. On the other hand, there is also a differential line arranged with G-S-G-S-G. When a GSS-SG differential line is connected to one end and a differential line having a GSSGSG arrangement is connected to the other end, the wiring arrangement is different at both ends. I can't connect as it is.

本発明の目的は、高周波信号の伝送特性が良好な差動線路の配置変換機能を有する配線基板、半導体素子パッケージおよび半導体装置を提供することである。 An object of the present invention is to provide a wiring substrate, a semiconductor element package, and a semiconductor device having a differential line arrangement conversion function having good transmission characteristics of high-frequency signals.

本発明の一つの態様の配線基板は、誘電体基板と、前記誘電体基板の一方主面に設けられる、差動信号伝送を行う一対の差動信号伝送線路であって、第１端部配線部、第２端部配線部および前記第１端部配線部と前記第２端部配線部とを接続する第１中央配線部を有する第１伝送線路と、前記第１端部配線部に第１の間隔を空けて隣接する第３端部配線部、前記第２端部配線部に前記第１の間隔よりも大きい第２の間隔を空けて配置される第４端部配線部および前記第１中央配線部に沿って設けられる、前記第３端部配線部と前記第４端部配線部とを接続する第２中央配線部を有する第２伝送線路と、からなる一対の差動信号伝送線路と、前記一方主面に、前記第１伝送線路に沿って設けられる第１接地配線と、前記一方主面に、前記第２伝送線路に沿って設けられる第２接地配線と、前記一方主面の、前記第２の間隔に設けられる第３接地配線と、を含むことを特徴とする。 The wiring substrate of one aspect of the present invention is a dielectric substrate and a pair of differential signal transmission lines provided on one main surface of the dielectric substrate for performing differential signal transmission, and is wiring at the first end. A first transmission line having a first central wiring portion for connecting a portion, a second end portion wiring portion, the first end portion wiring portion, and the second end portion wiring portion, and a first transmission line having the first end portion wiring portion. A third end wiring portion adjacent to each other with a gap of 1, a fourth end wiring portion arranged at the second end wiring portion with a second spacing larger than the first spacing, and the first. 1 A pair of differential signal transmissions including a second transmission line having a second central wiring portion for connecting the third end wiring portion and the fourth end wiring portion provided along the central wiring portion. A line, a first ground wiring provided along the first transmission line on the one main surface, a second ground wiring provided along the second transmission line on the one main surface, and the one main surface. It is characterized by including a third ground wiring provided at the second interval on the surface.

上記態様において、前記第１端部配線部、前記第３端部配線部、前記第１中央配線部および前記第２中央配線部は、直線状に設けられ、前記第１中央配線部と前記第２中央配線部との間隔が、前記第１の間隔と同じであるのがよい。 In the above embodiment, the first end wiring portion, the third end wiring portion, the first central wiring portion, and the second central wiring portion are provided in a straight line, and the first central wiring portion and the first central wiring portion are provided. 2 It is preferable that the distance from the central wiring portion is the same as the first distance.

また、上記態様において、第３接地配線は、涙滴形状であり、前記第２端部配線部は、前記第１中央配線部に対して、屈曲して連なる第１屈曲部と、該第１屈曲部に連なるとともに、前記誘電体基板の端部側に位置する第１遊端部とを有し、前記第４端部配線部は、前記第２中央配線部に対して、屈曲して連なる第２屈曲部と、該第２屈曲部に連なるとともに、前記誘電体基板の端部側に位置する第２遊端部とを有しており、前記第１屈曲部、前記第２屈曲部、前記第１遊端部および前記第２遊端部は、前記第３接地配線の形状に沿うように設けられ、前記第１遊端部と前記第２遊端部は、前記第１の間隔より大きく、前記第１屈曲部と前記第２屈曲部との最大の間隔より小さい部分であり、前記第１屈曲部と前記第２屈曲部との最大の間隔は、前記第１遊端部と前記第２遊端部との間隔より大きい部分である。 Further, in the above aspect, the third ground wiring has a teardrop shape, and the second end wiring portion has a first bending portion that is bent and connected to the first central wiring portion, and the first bending portion. It is connected to the bent portion and has a first free end portion located on the end side of the dielectric substrate, and the fourth end wiring portion is bent and connected to the second central wiring portion. It has a second bent portion, a second free end portion connected to the second bent portion and located on the end side of the dielectric substrate, and the first bent portion, the second bent portion, and the like. The first free end portion and the second free end portion are provided so as to follow the shape of the third ground wiring, and the first free end portion and the second free end portion are separated from each other by the first distance. It is a portion that is large and smaller than the maximum distance between the first bent portion and the second bent portion, and the maximum distance between the first bent portion and the second bent portion is the portion between the first free end portion and the second bent portion. It is a portion larger than the distance from the second free end portion.

また、上記態様において、前記第１屈曲部および前記第２屈曲部は、曲線状であるのがよい。 Further, in the above aspect, the first bent portion and the second bent portion are preferably curved.

また、上記態様において、前記第３接地配線は、涙滴形状であるとともに、前記第１屈曲部と前記第２屈曲部との間に位置する第５端部とこの第５端部とは反対側であって、前記第１遊端部と前記第２遊端部との間に位置する第６端部とを有し、前記第５端部から前記第６端部にかけて、配線幅が狭くなり、前記第１屈曲部、前記第２屈曲部、前記第１遊端部および前記第２遊端部は、前記第３接地配線の形状に沿うように設けられるのがよい。 Further, in the above aspect, the third grounding wiring has a teardrop shape, and the fifth end portion located between the first bent portion and the second bent portion is opposite to the fifth end portion. It has a sixth end portion located between the first free end portion and the second free end portion on the side, and the wiring width is narrow from the fifth end portion to the sixth end portion. Therefore, the first bent portion, the second bent portion, the first free end portion, and the second free end portion are preferably provided so as to follow the shape of the third grounding wiring.

また、上記態様において、前記第５端部に接続され、前記誘電体基板に埋設された接地ビア導体をさらに含むのがよい。 Further, in the above aspect, it is preferable to further include a ground via conductor connected to the fifth end portion and embedded in the dielectric substrate.

また本発明の一つの態様の半導体素子パッケージは、半導体素子が載置される載置領域を含む主面を有する板状の基体と、前記載置領域を囲むように前記主面に設けられる枠部材と、上記の配線基板であって、前記第１端部配線部および前記第３端部配線部が前記枠部材の外部または内部に配置され、前記第２端部配線部および前記第４端部配線部が前記枠部材の内部または外部に配置されるように、前記枠部材を貫通して設けられる配線基板と、を備えることを特徴とする。 Further, the semiconductor element package according to one aspect of the present invention includes a plate-shaped substrate having a main surface including a mounting region on which the semiconductor element is mounted, and a frame provided on the main surface so as to surround the previously described mounting region. The member and the wiring board, the first end wiring portion and the third end wiring portion are arranged outside or inside the frame member, and the second end wiring portion and the fourth end are arranged. It is characterized by including a wiring board provided so as to penetrate the frame member so that the wiring portion is arranged inside or outside the frame member.

また本発明の一つの態様の半導体装置は、上記の半導体素子パッケージと、前記載置領域に載置された半導体素子と、一対の差動信号伝送線路、前記第１接地配線、前記第２接地配線および前記第３接地配線と、前記半導体素子とを電気的に接続する接続部材と、を備えることを特徴とする。 Further, the semiconductor device according to one aspect of the present invention includes the above-mentioned semiconductor element package, the semiconductor element mounted in the above-described region, a pair of differential signal transmission lines, the first grounded wiring, and the second grounded. It is characterized by including wiring, the third grounded wiring, and a connecting member for electrically connecting the semiconductor element.

本発明の一つの態様の配線基板によれば、差動信号伝送を行う一対の差動信号伝送線路の両側に第１接地配線と第２接地配線とが設けられ、第２端部配線部と第４端部配線部との間に第３接地配線が設けられる。これにより、一方側が接地配線−信号配線−信号配線−接地配線との並びであり、他方側が接地配線−信号配線−接地配線−信号配線−接地配線との並びであるような場合でも、インピーダンスの変動などによる反射や損失を抑制して高周波信号の伝送特性を良好に変換する配線基板を提供することができる。 According to the wiring board of one aspect of the present invention, the first grounded wiring and the second grounded wiring are provided on both sides of the pair of differential signal transmission lines for performing the differential signal transmission, and the second end wiring portion and the wiring portion. A third ground wire is provided between the wire and the fourth end wiring section. As a result, even if one side is a line of ground wiring-signal wiring-signal wiring-ground wiring and the other side is a line of ground wiring-signal wiring-ground wiring-signal wiring-ground wiring, the impedance It is possible to provide a wiring substrate that suppresses reflection and loss due to fluctuations and the like to satisfactorily convert the transmission characteristics of high-frequency signals.

上記態様において、第１端部配線部、第３端部配線部、第１中央配線部および第２中央配線部が、直線状に設けられ、第１中央配線部と第２中央配線部との間隔が、第１の間隔と同じであると、第１端部配線部から第１中央配線部、第３端部配線部から第２中央配線部において高周波インピーダンスを一定のものとできる。 In the above embodiment, the first end wiring portion, the third end wiring portion, the first central wiring portion, and the second central wiring portion are provided in a straight line, and the first central wiring portion and the second central wiring portion are connected to each other. When the interval is the same as the first interval, the high frequency impedance can be made constant from the first end wiring portion to the first central wiring portion and from the third end wiring portion to the second central wiring portion.

また、上記態様において、第２端部配線部は、第１中央配線部に対して、屈曲して連なる第１屈曲部と、この第１屈曲部に連なる第１遊端部とを有し、第４端部配線部は、第２中央配線部に対して、屈曲して連なる第２屈曲部と、この第２屈曲部に連なる第２遊端部とを有していると、第１遊端部および第２遊端部の間隔を第１中央配線部および第２中央配線部の間隔と異なるものとすることができる。 Further, in the above aspect, the second end wiring portion has a first bent portion that is bent and connected to the first central wiring portion, and a first free end portion that is connected to the first bent portion. When the fourth end wiring portion has a second bent portion that is bent and connected to the second central wiring portion and a second free end portion that is connected to the second bent portion, the first play The distance between the end portion and the second free end portion can be different from the distance between the first central wiring portion and the second central wiring portion.

また、上記態様において、第１屈曲部および第２屈曲部が曲線状であると、第１屈曲部および第２屈曲部における高周波インピーダンス変動を低減させることができる。 Further, in the above aspect, when the first bent portion and the second bent portion are curved, the high frequency impedance fluctuation in the first bent portion and the second bent portion can be reduced.

また、上記態様において、第３接地配線は、第１屈曲部と第２屈曲部との間に位置する第５端部とこの第５端部とは反対側の第６端部とを有し、第５端部から第６端部にかけて、配線幅が狭くなり、第１屈曲部、第２屈曲部、第１遊端部および第２遊端部は、第３接地配線の形状に沿うように設けられると、高周波インピーダンスの変動を低減させながら第１遊端部および第２遊端部の間隔が狭い配置にすることができる。 Further, in the above aspect, the third ground wiring has a fifth end portion located between the first bent portion and the second bent portion and a sixth end portion on the opposite side to the fifth end portion. , The wiring width becomes narrower from the 5th end to the 6th end, and the first bent portion, the second bent portion, the first free end portion and the second free end portion follow the shape of the third ground wiring. If it is provided in, the distance between the first free end portion and the second free end portion can be narrowed while reducing the fluctuation of the high frequency impedance.

また、上記態様において、第５端部に接続され、誘電体基板に埋設された接地ビア導体をさらに含むと、第３接地配線の接地電位を安定させることができる。 Further, in the above aspect, if the grounding via conductor connected to the fifth end portion and embedded in the dielectric substrate is further included, the grounding potential of the third grounding wiring can be stabilized.

また本発明の一つの態様の半導体素子パッケージによれば、上記の配線基板を備えるので、高周波信号の伝送特性が良好な半導体素子パッケージを実現できる。 Further, according to the semiconductor element package of one aspect of the present invention, since the above wiring board is provided, a semiconductor element package having good high frequency signal transmission characteristics can be realized.

また本発明の一つの態様の半導体装置によれば、上記の半導体素子パッケージを備えるので、高周波信号の伝送特性が良好な半導体装置を実現できる。 Further, according to the semiconductor device of one aspect of the present invention, since the above-mentioned semiconductor element package is provided, it is possible to realize a semiconductor device having good transmission characteristics of high frequency signals.

本発明の実施形態である配線基板１を示す斜視図である。It is a perspective view which shows the wiring board 1 which is an embodiment of this invention. 図１に示す配線基板１の要部拡大平面図である。It is an enlarged plan view of the main part of the wiring board 1 shown in FIG. 配線基板１を備える半導体素子パッケージ１００を示す斜視図である。It is a perspective view which shows the semiconductor element package 100 which includes a wiring board 1. 半導体素子パッケージ１００の平面図である。It is a top view of the semiconductor element package 100. 図４の切断面線Ａ−Ａにおける半導体素子パッケージ１００の断面図である。It is sectional drawing of the semiconductor element package 100 in the cut plane line AA of FIG. 配線基板１近傍の拡大断面図である。It is an enlarged sectional view of the vicinity of a wiring board 1. 半導体装置２００を示す斜視図である。It is a perspective view which shows the semiconductor device 200.

図１は、本発明の実施形態である配線基板１を示す斜視図である。また、図２は配線基板１の他方端部付近の部分拡大平面図である。配線基板１は、誘電体基板２と、一対の差動信号伝送路３，４と、第１接地配線５と、第２接地配線６と、第３接地配線７と、接地導体層８とを含む。以下、図１および図２を参照しながら配線基板１について説明する。 FIG. 1 is a perspective view showing a wiring board 1 according to an embodiment of the present invention. Further, FIG. 2 is a partially enlarged plan view of the vicinity of the other end of the wiring board 1. The wiring board 1 includes a dielectric board 2, a pair of differential signal transmission lines 3 and 4, a first grounded wire 5, a second grounded wire 6, a third grounded wire 7, and a grounded conductor layer 8. Including. Hereinafter, the wiring board 1 will be described with reference to FIGS. 1 and 2.

誘電体基板２は、誘電体材料からなる基板である。この誘電体基板２の一方主面２ａに、一対の差動信号伝送路３，４、第１接地配線５、第２接地配線６および第３接地配線７の各配線と、接地導体層８とが設けられる。接地導体層８は、誘電体基板２の他方主面にも設けてもよい。また、他方主面に設ける代わりに誘電体基板２の内層に内層接地導体層１０として設けてもよい。 The dielectric substrate 2 is a substrate made of a dielectric material. On one main surface 2a of the dielectric substrate 2, each wiring of a pair of differential signal transmission lines 3 and 4, a first ground wiring 5, a second ground wiring 6 and a third ground wiring 7, and a ground conductor layer 8 are provided. Is provided. The ground conductor layer 8 may also be provided on the other main surface of the dielectric substrate 2. Further, instead of providing it on the other main surface, it may be provided as an inner layer grounding conductor layer 10 on the inner layer of the dielectric substrate 2.

誘電体材料としては、例えば、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体または窒化珪素質焼結体のようなセラミック材料、またはガラスセラミック材料を用いることができる。 The dielectric material includes, for example, a ceramic material such as an aluminum oxide sintered body, a mulite sintered body, a silicon carbide sintered body, an aluminum nitride material sintered body or a silicon nitride material sintered body, or a glass ceramic. Materials can be used.

一対の差動信号伝送線路３，４は、誘電体基板２の一方主面２ａに設けられており、差動信号の伝送を行う。一対の差動信号伝送線路３，４は、第１伝送線路３と第２伝送線路４とからなり、互いに結合するペア配線である。 The pair of differential signal transmission lines 3 and 4 are provided on one main surface 2a of the dielectric substrate 2 and transmit differential signals. The pair of differential signal transmission lines 3 and 4 are paired wirings including the first transmission line 3 and the second transmission line 4 and coupled to each other.

第１伝送線路３は、一方端部側の第１端部配線部３ａ、他方端部側の第２端部配線部３ｂおよび第１端部配線部３ａと第２端部配線部３ｂとを接続する第１中央配線部３ｃを有する。 The first transmission line 3 includes a first end wiring portion 3a on one end side, a second end wiring portion 3b on the other end side, a first end wiring portion 3a, and a second end wiring portion 3b. It has a first central wiring portion 3c to be connected.

第２伝送線路４は、一方端部側の第３端部配線部４ａ、他方端部側の第４端部配線部４ｂおよび第３端部配線部４ａと第４端部配線部４ｂとを接続する第２中央配線部４ｃを有する。第３端部配線部４ａは、第１端部配線部３ａに第１の間隔を空けて隣接しており、第４端部配線部４ｂは、第２端部配線部３ｂに第１の間隔よりも大きい第２の間隔を空けて配置される。すなわち、一対の差動信号伝送線路３，４は、一方端部側における両配線の間隔よりも、他方端部側における両配線の間隔のほうが広くなっている。 The second transmission line 4 includes a third end wiring portion 4a on one end side, a fourth end wiring portion 4b on the other end side, a third end wiring portion 4a, and a fourth end wiring portion 4b. It has a second central wiring portion 4c to be connected. The third end wiring portion 4a is adjacent to the first end wiring portion 3a with a first interval, and the fourth end wiring portion 4b is adjacent to the second end wiring portion 3b at a first interval. It is arranged with a second larger interval. That is, in the pair of differential signal transmission lines 3 and 4, the distance between the two wirings on the other end side is wider than the distance between the two wirings on the one end side.

また、第２伝送線路４は、第１中央配線部３ｃに沿って設けられ、第３端部配線部４ａと第４端部配線部４ｂとを接続する第２中央配線部４ｃを有する。 Further, the second transmission line 4 is provided along the first central wiring portion 3c, and has a second central wiring portion 4c that connects the third end portion wiring portion 4a and the fourth end portion wiring portion 4b.

誘電体基板２の一方主面２ａには、第１伝送線路３に沿って設けられる第１接地配線５と、第２伝送線路４に沿って設けられる第２接地配線６と、第２端部配線部３ｂと第４端部配線部４ｂとの間の第２の間隔に第３接地配線７が設けられる。第３接地配線７は、他方端部側から第１伝送線路３および第２伝送線路４の間に設けられる。また、第３接地配線７は、他方端部側から一方端部側に延びる第１伝送線路３および第２伝送線路４に沿うように第１伝送線路３および第２伝送線路４の途中まで延びている。 On one main surface 2a of the dielectric substrate 2, a first grounded wiring 5 provided along the first transmission line 3, a second grounded wiring 6 provided along the second transmission line 4, and a second end portion are provided. A third grounded wiring 7 is provided at a second interval between the wiring portion 3b and the fourth end wiring portion 4b. The third grounded wiring 7 is provided between the first transmission line 3 and the second transmission line 4 from the other end side. Further, the third grounded wiring 7 extends to the middle of the first transmission line 3 and the second transmission line 4 along the first transmission line 3 and the second transmission line 4 extending from the other end side to the one end side. ing.

誘電体基板２の一方主面２ａに設けられた各配線は、一方端部側において、第１接地配線５−第１伝送線路３−第２伝送線路４−第２接地配線６（ＧＳＳＧ）と並んでいるのに対し、他方端部側では、第１接地配線５−第１伝送線路３−第３接地配線７−第２伝送線路４−第２接地配線６（ＧＳＧＳＧ）と並んでいる。第３接地配線７を第１伝送線路３と第２伝送線路４との間に設けることで、一対の差動信号伝送線路３，４において、一方端部側ではＧＳＳＧ構成であり、他方端部側ではＧＳＧＳＧ構成であり、異なる端部構成に対応することができる。 The wiring provided on one main surface 2a of the dielectric substrate 2 is, on one end side, with the first ground wiring 5-first transmission line 3-second transmission line 4-second ground wiring 6 (GSSG). On the other end side, they are lined up with the first ground wire 5-first transmission line 3-third ground wire 7-second transmission line 4-second ground wire 6 (GSGSG). By providing the third ground wiring 7 between the first transmission line 3 and the second transmission line 4, the pair of differential signal transmission lines 3 and 4 have a GSSG configuration on one end side and the other end. On the side, it has a GSGSG configuration and can accommodate different end configurations.

一対の差動信号伝送線路３，４は、互いに結合しながら高周波信号を伝送するので、第１伝送線路３と第２伝送線路４は、線路幅、導体厚み、線路長（電気長）をほぼ同じとし、さらに第１伝送線路３と第２伝送線路４との間隔を一定とすることが好ましい。本実施形態では、第１端部配線部３ａ、第３端部配線部４ａ、第１中央配線部３ｃおよび第２中央配線部４ｃは、いずれもが直線状に設けられており、第１端部配線部３ａと第３端部配線部４ａの間隔と、第１中央配線部３ｃと前記第２中央配線部４ｃとの間隔を同じとしている。第２端部配線部３ｂおよび第４端部配線部４ｂにおいては、線路間隔が第１端部配線部３ａ、第１中央配線部３ｃ、第３端部配線部４ａおよび第２中央配線部４ｃにおける線路間隔よりも広い。なお、第１伝送線路３および第２伝送線路４を簡易的に直線状に表したが、曲線状にして配線基板１上の所定位置に引き回すことができることは言うまでもない。 Since the pair of differential signal transmission lines 3 and 4 transmit high-frequency signals while coupling with each other, the first transmission line 3 and the second transmission line 4 have approximately the same line width, conductor thickness, and line length (electrical length). It is preferable that the same is true and the distance between the first transmission line 3 and the second transmission line 4 is constant. In the present embodiment, the first end wiring portion 3a, the third end wiring portion 4a, the first central wiring portion 3c, and the second central wiring portion 4c are all provided in a straight line, and the first end is provided. The distance between the part wiring portion 3a and the third end wiring portion 4a is the same as the distance between the first central wiring portion 3c and the second central wiring portion 4c. In the second end wiring portion 3b and the fourth end wiring portion 4b, the line spacing is the first end wiring portion 3a, the first central wiring portion 3c, the third end wiring portion 4a, and the second central wiring portion 4c. Wider than the line spacing in. Although the first transmission line 3 and the second transmission line 4 are simply represented by linear lines, it goes without saying that they can be curved and routed to a predetermined position on the wiring board 1.

他方端部側では、ＧＳＧＳＧ構成とするために、第２端部配線部３ｂと第４端部配線部４ｂとの間隔である第２の間隔を第１端部配線部３ａと第３端部配線部４ａとの間隔である第１の間隔よりも大きくし、その間に第３接地配線７を設けている。第２の間隔は、第３接地配線７を設けることができる最短の間隔とすることができる。このとき、第２端部
配線部３ｂと第４端部配線部４ｂとは、その線路幅、導体厚み、線路長を同じとし、さらに第２端部配線部３ｂと第３接地配線７との間隔および第４端部配線部４ｂと第３接地配線７との間隔を同一とする。 On the other end side, in order to form a GNDSG configuration, the second interval, which is the interval between the second end wiring portion 3b and the fourth end wiring portion 4b, is set to the first end wiring portion 3a and the third end portion. The distance from the wiring portion 4a is larger than the first distance, and the third ground wiring 7 is provided between them. The second interval can be the shortest interval in which the third ground wiring 7 can be provided. At this time, the second end wiring portion 3b and the fourth end wiring portion 4b have the same line width, conductor thickness, and line length, and the second end wiring portion 3b and the third grounded wiring 7 are further connected. The spacing and the spacing between the fourth end wiring portion 4b and the third ground wiring 7 are the same.

第２端部配線部３ｂと第４端部配線部４ｂにおいて、第１の間隔よりも第２の間隔を広げることにより、第１接地配線５および第２接地配線６の間隔も広がるので、第１接地配線５および第２接地配線６との静電容量が低下し、インピーダンスが増加する傾向になる。よって、第２端部配線部３ｂと第４端部配線部４ｂでは、伝送方向に向かって直交する方向の幅を広くし、第１接地配線５および第２接地配線６との静電容量を増加させることにより、インピーダンスを低下させる必要があった。これにより、配線基板１は、第２端部配線部３ｂおよび第４端部配線部４ｂを誘電体基板２の他方端部側に高密度に配置することが困難になった。さらに、第１中央配線部３ｃと第２端部配線部３ｂとの接続部、および第２中央配線部４ｃと第４端部配線部４ｂとの接続部において、伝送方向に向かって直交する方向における伝送線路の幅が変化することにより、反射損失や挿入損失が増加するとともに周波数共振が生じる虞があった。 In the second end wiring portion 3b and the fourth end wiring portion 4b, by widening the second spacing from the first spacing, the spacing between the first grounded wiring 5 and the second grounded wiring 6 is also widened. The capacitance between the 1 ground wiring 5 and the 2nd ground wiring 6 tends to decrease, and the impedance tends to increase. Therefore, in the second end wiring portion 3b and the fourth end wiring portion 4b, the width in the direction orthogonal to the transmission direction is widened, and the capacitance between the first ground wiring 5 and the second ground wiring 6 is increased. It was necessary to lower the impedance by increasing it. This makes it difficult for the wiring board 1 to arrange the second end wiring portion 3b and the fourth end wiring portion 4b at high density on the other end side of the dielectric substrate 2. Further, in the connection portion between the first central wiring portion 3c and the second end wiring portion 3b, and the connection portion between the second central wiring portion 4c and the fourth end wiring portion 4b, the directions orthogonal to the transmission direction. Due to the change in the width of the transmission line in the above, there is a possibility that reflection loss and insertion loss increase and frequency resonance occurs.

これに対して本発明では、配線基板１は、第１の間隔よりも第２の間隔を広げるように設けられた第２端部配線部３ｂと第４端部配線部４ｂとの間に第３接地配線７を設けることにより、伝送方向に向かって直交する方向における、第２端部配線部３ｂと第４端部配線部４ｂの幅を広げることなく静電容量を増加させ、インピーダンスを低下させることができる。さらに、配線基板１は、第１中央配線部３ｃと第２端部配線部３ｂとの接続部、および第２中央配線部４ｃと第４端部配線部４ｂとの接続部における伝送線路の反射損失や挿入損失の増加、および周波数共振の発生を抑制することができる。 On the other hand, in the present invention, the wiring board 1 is provided between the second end wiring portion 3b and the fourth end wiring portion 4b provided so as to widen the second interval from the first interval. 3 By providing the grounded wiring 7, the capacitance is increased and the impedance is lowered without widening the width of the second end wiring portion 3b and the fourth end wiring portion 4b in the direction orthogonal to the transmission direction. Can be made to. Further, the wiring board 1 reflects the transmission line at the connection portion between the first central wiring portion 3c and the second end wiring portion 3b and the connection portion between the second central wiring portion 4c and the fourth end wiring portion 4b. It is possible to suppress an increase in loss and insertion loss, and the occurrence of frequency resonance.

上記のように本実施形態では、第３接地配線７を設けるために、第２端部配線部３ｂと第４端部配線部４ｂとの間隔を第１端部配線部３ａと第３端部配線部４ａとの間隔よりも大きくしている。具体的には、第２端部配線部３ｂは、第１中央配線部３ｃに対して屈曲して連なる第１屈曲部３０ａと、この第１屈曲部３０ａに連なる第１遊端部３０ｂとを有し、第４端部配線部４ｂは、第２中央配線部４ｃに対して屈曲して連なる第２屈曲部４０ａと、この第２屈曲部４０ａに連なる第２遊端部４０ｂとを有する。 As described above, in the present embodiment, in order to provide the third ground wiring 7, the distance between the second end wiring portion 3b and the fourth end wiring portion 4b is set between the first end wiring portion 3a and the third end portion. It is made larger than the distance from the wiring portion 4a. Specifically, the second end wiring portion 3b has a first bent portion 30a that is bent and connected to the first central wiring portion 3c, and a first free end portion 30b that is bent and connected to the first bent portion 30a. The fourth end wiring portion 4b has a second bent portion 40a that is bent and connected to the second central wiring portion 4c, and a second free end portion 40b that is bent and connected to the second bent portion 40a.

第１屈曲部３０ａと第２屈曲部４０ａとが、少なくとも互いに離反する部分を有することで、第２端部配線部３ｂと第４端部配線部４ｂとの間隔を大きくし、第３接地配線７を設けている。第３接地配線７は、第１屈曲部３０ａと第２屈曲部４０ａとの間に位置する第５端部７ａと、この第５端部７ａとは反対側の第６端部７ｂとを有する。第６端部７ｂは誘電体基板２の他方端部側に位置する。第３接地配線７は、高周波特性を劣化させない配線形状とされる。また、第３接地配線７は、接地電位とするため、接地導体に接続される。例えば、第３接地配線７は、第５端部７ａにおいてビア導体により、接地導体に接続された内層接地導体層１０や、誘電体基板２の他方主面に設けられた接地導体層８と電気的に接続される。 By having the first bent portion 30a and the second bent portion 40a at least separated from each other, the distance between the second end wiring portion 3b and the fourth end wiring portion 4b is increased, and the third ground wiring is made. 7 is provided. The third ground wiring 7 has a fifth end portion 7a located between the first bent portion 30a and the second bent portion 40a, and a sixth end portion 7b on the opposite side of the fifth end portion 7a. .. The sixth end portion 7b is located on the other end side of the dielectric substrate 2. The third grounded wiring 7 has a wiring shape that does not deteriorate the high frequency characteristics. Further, the third ground wiring 7 is connected to the ground conductor in order to have a ground potential. For example, the third ground wiring 7 is electrically connected to the inner layer ground conductor layer 10 connected to the ground conductor by the via conductor at the fifth end 7a, and the ground conductor layer 8 provided on the other main surface of the dielectric substrate 2. Is connected.

第１屈曲部３０ａと第２屈曲部４０ａとは、インピーダンスの変動を低減するとともに、反射損失や挿入損失等の周波数特性を改善するために、伝送線路の幅および第３接地配線７との間隔を一定とする。また、第２端部配線部３ｂと第３接地配線７および第４端部配線部４ｂと第３接地配線７との静電容量の制御幅を大きくするために、第１屈曲部３０ａおよび第２屈曲部４０ａを互いに離反する方向に凸状の曲線とする。そうすると、第３接地配線７の形状は、第１屈曲部３０ａと第２屈曲部４０ａの形状に沿ったものとなる。 The width of the transmission line and the distance between the first bent portion 30a and the second bent portion 40a are the width of the transmission line and the distance between the first bent portion 30a and the second bent portion 40a in order to reduce impedance fluctuations and improve frequency characteristics such as reflection loss and insertion loss. Is constant. Further, in order to increase the control range of the capacitance between the second end wiring portion 3b and the third ground wiring 7 and the fourth end wiring portion 4b and the third ground wiring 7, the first bent portion 30a and the first bending portion 30a and the first 2 The bent portion 40a is formed into a convex curve in a direction away from each other. Then, the shape of the third ground wiring 7 follows the shapes of the first bent portion 30a and the second bent portion 40a.

第１屈曲部３０ａと第２屈曲部４０ａは、伝送線路の幅を大きく変化させたり、鋭角な角部を設けると、挿入損失や反射損失が大きくなり、周波数共振も生じる。したがって、
第１屈曲部３０ａと第２屈曲部４０ａは、伝送線路の幅および第３接地配線７との間隔を一定かつ曲線状とすることが好ましい。 If the width of the transmission line of the first bent portion 30a and the second bent portion 40a is significantly changed or if an acute-angled corner portion is provided, insertion loss and reflection loss increase, and frequency resonance also occurs. Therefore,
It is preferable that the width of the transmission line and the distance between the first bent portion 30a and the second bent portion 40a are constant and curved.

本実施形態では、第１屈曲部３０ａと第２屈曲部４０ａとが、互いに離反する方向に凸状の円弧形状としている。円弧形状の第１屈曲部３０ａと第２屈曲部４０ａには、それぞれ第１遊端部３０ｂと第２遊端部４０ｂが接続される。第１遊端部３０ｂと第２遊端部４０ｂには、一対の差動信号伝送線路３，４と半導体素子１１等を電気的に接続する機能を有するボンディングワイヤ１２等の接続部材が接続される。第１遊端部３０ｂと第２遊端部４０ｂは、誘電体基板２の他方端部側に平行に延びて設けられる。 In the present embodiment, the first bent portion 30a and the second bent portion 40a have an arc shape that is convex in the direction in which they are separated from each other. The first free end portion 30b and the second free end portion 40b are connected to the arc-shaped first bent portion 30a and the second bent portion 40a, respectively. A connecting member such as a bonding wire 12 having a function of electrically connecting a pair of differential signal transmission lines 3 and 4 and a semiconductor element 11 or the like is connected to the first free end portion 30b and the second free end portion 40b. To. The first free end portion 30b and the second free end portion 40b are provided so as to extend in parallel with the other end portion side of the dielectric substrate 2.

第１遊端部３０ｂと第２遊端部４０ｂとの間には、第１遊端部３０ｂと第２遊端部４０ｂとの間隔を保ち第３接地配線７の第６端部７ｂが配置される。このような、第２端部配線部３ｂと第４端部配線部４ｂおよび第１遊端部３０ｂと第２遊端部４０ｂの形状に応じて第３接地配線７は、第５端部７ａの形状が略円形状であり、第６端部７ｂにかけて配線幅が狭くなっている。第３接地配線７は、配線基板１の平面上視においていわゆる涙滴状の形状を成している。 The sixth end portion 7b of the third ground wiring 7 is arranged between the first free end portion 30b and the second free end portion 40b while maintaining a distance between the first free end portion 30b and the second free end portion 40b. Will be done. Depending on the shapes of the second end wiring portion 3b, the fourth end wiring portion 4b, the first free end portion 30b, and the second free end portion 40b, the third ground wiring 7 may be the fifth end portion 7a. The shape of the above is substantially circular, and the wiring width is narrowed toward the sixth end portion 7b. The third grounded wiring 7 has a so-called teardrop-like shape when viewed on a plane of the wiring board 1.

第１遊端部３０ｂと第２遊端部４０ｂとの間隔は、第１屈曲部３０ａと第２屈曲部４０ａとの間隔よりも小さいが、第１端部配線部３ａと第３端部配線部４ａとの間隔よりも大きい。本実施形態において、第１伝送線路３および第２伝送線路４は、第１中央配線部３ｃおよび第２中央配線部４ｃとの接続部分から誘電体基板２の他方端部側に向けて、第１屈曲部３０ａと第２屈曲部４０ａとが互いに離反するように間隔を広げ、その後、第１屈曲部３０ａと第２屈曲部４０ａとは互いに近接するようにして第１遊端部３０ｂおよび第２遊端部４０ｂに接続される。 The distance between the first free end portion 30b and the second free end portion 40b is smaller than the distance between the first bent portion 30a and the second bent portion 40a, but the first end wiring portion 3a and the third end wiring It is larger than the distance from the part 4a. In the present embodiment, the first transmission line 3 and the second transmission line 4 are located from the connection portion with the first central wiring portion 3c and the second central wiring portion 4c toward the other end side of the dielectric substrate 2. The distance between the first bent portion 30a and the second bent portion 40a is widened so as to be separated from each other, and then the first bent portion 30a and the second bent portion 40a are brought close to each other so that the first free end portion 30b and the second bent portion 40a 2 Connected to the free end portion 40b.

第１屈曲部３０ａと第２屈曲部４０ａとは、その間に第３接地配線７が設けられればよいので、誘電体基板２の他方端部側に向かって互いに離反し、そのまま互いに近接することなく同じ間隔を保持したまま、第１遊端部３０ｂと第２遊端部４０ｂに連なり、平行に配設されてもよい。その場合、第１遊端部３０ｂと第２遊端部４０ｂとの間隔が比較的大きくなるとともに、第１遊端部３０ｂと第２遊端部４０ｂとの間に配置される第３接地配線７の第６端部７ｂにおける、線路幅が大きくなる。 Since the first bent portion 30a and the second bent portion 40a need only be provided with the third grounding wiring 7 between them, they are separated from each other toward the other end side of the dielectric substrate 2 and do not come close to each other as they are. The first free end portion 30b and the second free end portion 40b may be connected to each other and arranged in parallel while maintaining the same spacing. In that case, the distance between the first free end portion 30b and the second free end portion 40b becomes relatively large, and the third ground wiring arranged between the first free end portion 30b and the second free end portion 40b. The line width at the sixth end 7b of 7 is increased.

第１遊端部３０ｂ、第２遊端部４０ｂおよび第３接地配線７の第６端部７ｂは、半導体素子１１やマウント部材１５に設けられた配線導体とボンディングワイヤ１２などの接続部材で接続される部分である。 The first free end portion 30b, the second free end portion 40b, and the sixth end portion 7b of the third ground wiring 7 are connected to the wiring conductor provided on the semiconductor element 11 or the mount member 15 by a connecting member such as a bonding wire 12. It is the part to be done.

ボンディングワイヤ１２は、伝送線路の直径が長さに対して小さく、インダクタンス成分が大きくなる。また、周辺に電磁結合できる導体がないと、容量成分が小さくなる。したがって、高周波インピーダンスが伝送線路に比べて高くなり、第１遊端部３０ｂおよび第２遊端部４０ｂからボンディングワイヤ１２を伝送する高周波信号の伝送特性が劣化する傾向がある。 In the bonding wire 12, the diameter of the transmission line is small with respect to the length, and the inductance component is large. Further, if there is no conductor that can be electromagnetically coupled to the periphery, the capacitance component becomes small. Therefore, the high-frequency impedance tends to be higher than that of the transmission line, and the transmission characteristics of the high-frequency signal transmitting the bonding wire 12 from the first free end portion 30b and the second free end portion 40b tend to deteriorate.

周辺に誘電体が存在せずとも、ボンディングワイヤ１２は、伝送線路と同様に互いに電磁結合し、ボンディングワイヤ１２同士の距離が小さいほど電磁結合が強くなる。本実施形態は、第１屈曲部３０ａと第２屈曲部４０ａとが、伝送方向に向かって一旦互いに離反したのち、近接するように設けられていることにより、第１遊端部３０ｂ、第２遊端部４０ｂおよび第３接地配線７の第６端部７ｂの間隔を比較的小さくできる。したがって、これらボンディングワイヤ１２等の接続部材同士の間の距離を小さくすることができ、電磁結合を強くすることができる。これによりボンディングワイヤ１２等の接続部材におけるインピーダンスが高くなることを抑制し、ボンディングワイヤ１２における伝送特性の劣化を抑制することができる。 Even if there is no dielectric in the periphery, the bonding wires 12 are electromagnetically bonded to each other as in the transmission line, and the smaller the distance between the bonding wires 12, the stronger the electromagnetic coupling. In the present embodiment, the first bent portion 30a and the second bent portion 40a are provided so as to be close to each other after being separated from each other in the transmission direction, so that the first free end portion 30b and the second bent portion 30b are provided. The distance between the free end portion 40b and the sixth end portion 7b of the third ground wiring 7 can be made relatively small. Therefore, the distance between the connecting members such as the bonding wires 12 can be reduced, and the electromagnetic coupling can be strengthened. As a result, it is possible to suppress an increase in impedance in a connecting member such as the bonding wire 12, and to suppress deterioration of transmission characteristics in the bonding wire 12.

第２端部配線部３ｂと第４端部配線部４ｂは、第１伝送線路３と第２伝送線路４の高周波伝送特性を劣化させる部分であるので、第２端部配線部３ｂと第４端部配線部４ｂの長さは、第１伝送線路３と第２伝送線路４の全長において、例えば、５〜３０％とすることが好ましい。 Since the second end wiring portion 3b and the fourth end wiring portion 4b are portions that deteriorate the high frequency transmission characteristics of the first transmission line 3 and the second transmission line 4, the second end wiring portion 3b and the fourth are The length of the end wiring portion 4b is preferably, for example, 5 to 30% of the total length of the first transmission line 3 and the second transmission line 4.

接地導体層８は、誘電体基板２の一方主面２ａの、差動信号伝送線路３，４の延びる方向に直交する方向端部、および誘電体基板２の他方主面または内層に設けられるベタ導体層である。なお他方主面に設ける代わりに、誘電体基板２の内層に内層接地導体層１０として設けてもよい。接地導体層８および内層接地導体層１０は、接地導体に電気的に接続され、差動信号伝送線路３，４の接地電位（基準電位）となる。 The ground conductor layer 8 is a solid provided on one main surface 2a of the dielectric substrate 2 in a direction orthogonal to the extending direction of the differential signal transmission lines 3 and 4, and on the other main surface or inner layer of the dielectric substrate 2. It is a conductor layer. On the other hand, instead of being provided on the main surface, the inner layer of the dielectric substrate 2 may be provided as the inner layer grounding conductor layer 10. The ground conductor layer 8 and the inner ground conductor layer 10 are electrically connected to the ground conductor and serve as the ground potential (reference potential) of the differential signal transmission lines 3 and 4.

一対の差動信号伝送線路３，４、第１接地配線５、第２接地配線６および第３接地配線７の各配線と、接地導体層８は、金、銀、銅、ニッケル、タングステン、モリブデンおよびマンガンなどの金属材料からなり、誘電体基板２の表層にメタライズ層やめっき層等の形態で同時焼成されたり、金属めっきされてなる。また、金属材料の線材が所定の形状に加工されて作製され、誘電体基板２の表層に設けられためっき層にろう材等の接合材を介して接合されたものでもよく、例えば誘電体基板２との同時焼成が可能な金属材料に限らず、鉄、ニッケル、コバルトおよびクロム等からなる金属合金が所定の配線形状に加工され、誘電体基板２の表層に設けられためっき層にろう材で接合されたものも使用できる。 The pair of differential signal transmission lines 3 and 4, the first ground wire 5, the second ground wire 6 and the third ground wire 7 and the ground conductor layer 8 are gold, silver, copper, nickel, tungsten and molybdenum. It is made of a metal material such as manganese and manganese, and is simultaneously fired or metal-plated on the surface layer of the dielectric substrate 2 in the form of a metallized layer or a plating layer. Further, a wire rod made of a metal material may be processed into a predetermined shape and bonded to a plating layer provided on the surface layer of the dielectric substrate 2 via a bonding material such as a brazing material. For example, a dielectric substrate may be used. Not limited to metal materials that can be fired at the same time as 2, a metal alloy made of iron, nickel, cobalt, chromium, etc. is processed into a predetermined wiring shape, and a brazing material is formed on the plating layer provided on the surface layer of the dielectric substrate 2. Those joined by can also be used.

誘電体基板２が、例えば酸化アルミニウム質焼結体からなる場合であれば、次のようにして作製することができる。まず酸化アルミニウムおよび酸化ケイ素等の原料粉末を適当な有機バインダおよび有機溶剤とともにシート状に成形して矩形シート状の複数のセラミックグリーンシートを作製する。次にこれらのセラミックグリーンシートを積層して積層体を作製する。その後、この積層体を１３００〜１６００℃の温度で焼成することによって誘電体基板２を作製することができる。なお、セラミックグリーンシートは必ずしも複数層を積層する必要はなく、誘電体基板２としての機械的な強度等の点で支障がなければ、１層のみでも構わない。 When the dielectric substrate 2 is made of, for example, an aluminum oxide sintered body, it can be produced as follows. First, raw material powders such as aluminum oxide and silicon oxide are formed into a sheet together with an appropriate organic binder and an organic solvent to prepare a plurality of rectangular sheet-shaped ceramic green sheets. Next, these ceramic green sheets are laminated to prepare a laminated body. Then, the dielectric substrate 2 can be produced by firing this laminate at a temperature of 1300 to 1600 ° C. It should be noted that the ceramic green sheet does not necessarily have to be laminated with a plurality of layers, and only one layer may be used as long as there is no problem in terms of mechanical strength as the dielectric substrate 2.

また、誘電体基板２が酸化アルミニウム質焼結体からなる場合、各配線と、接地導体層８は、例えばタングステンを含んでなり、次のようにして作製することができる。タングステンの粉末を有機溶剤および有機バインダと混合して作製した金属ペーストを誘電体基板２となるセラミックグリーンシートの表面（主面）に、所定のパターン形状となるように、スクリーン印刷法等の方法で印刷する。その後、これらのセラミックグリーンシートおよび金属ペーストを同時焼成する方法で、各配線と、接地導体層８を形成することができる。 When the dielectric substrate 2 is made of an aluminum oxide sintered body, each wiring and the ground conductor layer 8 contain, for example, tungsten, and can be produced as follows. A method such as a screen printing method so that a metal paste prepared by mixing tungsten powder with an organic solvent and an organic binder is formed into a predetermined pattern shape on the surface (main surface) of a ceramic green sheet to be a dielectric substrate 2. Print with. After that, each wiring and the ground conductor layer 8 can be formed by a method of simultaneously firing these ceramic green sheets and metal pastes.

また、各配線が層間接続導体を含んでいても良く、上記と同様の金属材料を用い、同様の方法で形成することができる。層間接続導体の場合には、予め誘電体基板２となるセラミックグリーンシートに厚み方向に貫通する貫通孔を設けておいて、この貫通孔内に金属ペーストを充填し、セラミックグリーンシートおよび金属ペーストを同時焼成すればよい。 Further, each wiring may include an interlayer connection conductor, and can be formed by the same method using the same metal material as described above. In the case of an interlayer connection conductor, a through hole penetrating in the thickness direction is provided in advance in the ceramic green sheet to be the dielectric substrate 2, and the through hole is filled with a metal paste to form the ceramic green sheet and the metal paste. It may be fired at the same time.

次に配線基板１を備える半導体素子パッケージ１００および半導体装置２００について説明する。 Next, the semiconductor element package 100 and the semiconductor device 200 including the wiring board 1 will be described.

図３は、配線基板１を備える半導体素子パッケージ１００を示す斜視図である。図４は、半導体素子パッケージ１００の平面図である。図５は、図４の切断面線Ａ−Ａにおける半導体素子パッケージ１００の断面図である。図６は、配線基板１近傍の拡大断面図である。図７は、半導体装置２００を示す斜視図である。 FIG. 3 is a perspective view showing a semiconductor element package 100 including the wiring board 1. FIG. 4 is a plan view of the semiconductor device package 100. FIG. 5 is a cross-sectional view of the semiconductor device package 100 at the cut plane line AA of FIG. FIG. 6 is an enlarged cross-sectional view of the vicinity of the wiring board 1. FIG. 7 is a perspective view showing the semiconductor device 200.

半導体素子パッケージ１００は、配線基板１と基体２０と枠部材３０とを備える。半導体素子パッケージ１００は、その内部に半導体素子１１を収納し、半導体素子に電気信号を入出力するこができる機能を有する半導体装置２００を構成するものである。 The semiconductor element package 100 includes a wiring board 1, a base 20, and a frame member 30. The semiconductor element package 100 comprises a semiconductor device 200 in which the semiconductor element 11 is housed and has a function of inputting and outputting an electric signal to the semiconductor element.

本実施形態では、半導体素子パッケージ１００に収納される半導体素子１１は、発光素子であるＬＤ（レーザダイオード）を例としている。 In the present embodiment, the semiconductor element 11 housed in the semiconductor element package 100 is an example of an LD (laser diode) which is a light emitting element.

基体２０は、矩形板状に形成されており、一方主面２ａに半導体素子１１を載置可能な載置領域を有している。この載置領域は、半導体素子パッケージ１００に収納される半導体素子１１を載置し、半導体素子を基体２０の表面に固定するための領域である。 The substrate 20 is formed in a rectangular plate shape, and has a mounting region on the main surface 2a on which the semiconductor element 11 can be mounted. This mounting region is a region for mounting the semiconductor element 11 housed in the semiconductor element package 100 and fixing the semiconductor element to the surface of the substrate 20.

本実施形態の基体２０は、複数の絶縁性基板を積層することにより作製される。そして、基体２０の載置領域上に半導体素子１１が載置される。絶縁性基板としては、例えば、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体または窒化珪素質焼結体のようなセラミック材料、またはガラスセラミック材料を用いることができる。 The substrate 20 of the present embodiment is manufactured by laminating a plurality of insulating substrates. Then, the semiconductor element 11 is mounted on the mounting region of the substrate 20. The insulating substrate may be, for example, a ceramic material such as an aluminum oxide sintered body, a mulite sintered body, a silicon carbide sintered body, an aluminum nitride material sintered body or a silicon nitride material sintered body, or a glass ceramic. Materials can be used.

基体２０の作製方法の一例を説明する。上記材料のガラス粉末およびセラミック粉末を含有する原料粉末、有機溶剤並びにバインダを混ぜることにより混合部材を作製する。この混合部材をシート状に成形することにより複数のセラミックグリーンシートを作製する。作製された複数のセラミックグリーンシートを積層することにより積層体を作製する。積層体を約１６００度の温度で焼成することにより基体２０が作製される。 An example of a method for producing the substrate 20 will be described. A mixing member is prepared by mixing a raw material powder containing the glass powder and the ceramic powder of the above materials, an organic solvent, and a binder. A plurality of ceramic green sheets are produced by molding this mixing member into a sheet shape. A laminated body is produced by laminating a plurality of produced ceramic green sheets. The substrate 20 is produced by firing the laminate at a temperature of about 1600 degrees.

なお、基体２０としては、複数の絶縁性基板が積層された構成に限られるものではない。一つの絶縁性基板により基体２０が構成されていてもよい。また、基体２０として、少なくとも半導体素子１１が載置される載置領域の部分に高い絶縁性を有していることが求められることから、例えば、金属基板の少なくとも載置領域上に絶縁性基板を積層した構成としてもよい。特に、基体２０に対して高い放熱性が求められる場合、金属部材は高い放熱性を有していることから、基体２０がこのような構成であることが好ましい。金属基板上に絶縁性基板を積層した構成とすることで、基体２０の放熱性を高めることができる。 The substrate 20 is not limited to a configuration in which a plurality of insulating substrates are laminated. The substrate 20 may be composed of one insulating substrate. Further, since the substrate 20 is required to have high insulating properties at least in the mounting region on which the semiconductor element 11 is mounted, for example, an insulating substrate is placed on at least the mounting region of the metal substrate. May be laminated. In particular, when high heat dissipation is required for the substrate 20, since the metal member has high heat dissipation, it is preferable that the substrate 20 has such a configuration. The heat dissipation of the substrate 20 can be improved by stacking the insulating substrate on the metal substrate.

金属基板材料としては、具体的には、鉄、銅、ニッケル、クロム、コバルト、モリブデンまたはタングステンのような金属、あるいはこれらの金属の合金、たとえば銅−タングステン合金、銅−モリブデン合金、鉄−ニッケル−コバルト合金などを用いることができる。このような金属材料のインゴットに圧延加工法、打ち抜き加工法のような金属加工法を施すことによって基体２０を構成する金属基板を作製することができる。 Specific examples of the metal substrate material include metals such as iron, copper, nickel, chromium, cobalt, molybdenum or tungsten, or alloys of these metals such as copper-tungsten alloy, copper-molybdenum alloy and iron-nickel. -A cobalt alloy or the like can be used. A metal substrate constituting the substrate 20 can be produced by subjecting an ingot of such a metal material to a metal processing method such as a rolling process or a punching process.

作製した金属基板の載置領域上に、別途作製した絶縁性基板をろう材などの接合材で接合して基体２０を得る。 A substrate 20 is obtained by joining a separately prepared insulating substrate with a bonding material such as a brazing material on the mounting region of the produced metal substrate.

枠部材３０は、平面視において基体２０の載置領域を取り囲んで基体２０の一方主面に設けられている。枠部材３０は、載置領域を取り囲んでいればよく、枠部材３０の内側において、載置領域は、中央部分にあってもよく、その他の部分にあってもよい。また、基体２０は、本実施形態のように、基体２０の主面が枠部材３０よりも大きく、延出する部分があってもよく、枠部材３０とほぼ同じ外形状を有していてもよい。 The frame member 30 is provided on one main surface of the substrate 20 so as to surround the mounting area of the substrate 20 in a plan view. The frame member 30 may surround the mounting area, and the mounting area may be located in the central portion or other portions inside the frame member 30. Further, as in the present embodiment, the substrate 20 may have a main surface larger than that of the frame member 30 and may have an extending portion, and may have substantially the same outer shape as the frame member 30. Good.

枠部材３０は、金属材料からなり、例えば、基体２０と同様の鉄、銅、ニッケル、クロム、コバルトおよびタングステンのような金属部材、あるいはこれらの金属からなる合金を用いることができる。このような金属部材のインゴットに切削加工法、金型加工法、打ち抜き加工法のような金属加工法を施すことによって金属部材からなる枠部材３０を作製することができる。また、枠部材３０としてセラミック材料を用いてもよい。また、枠部材３０は、一種の材料からなっていてもよいが、複数種の材料が積層された構造であってもよい。 The frame member 30 is made of a metal material, and for example, a metal member such as iron, copper, nickel, chromium, cobalt and tungsten similar to the base 20 or an alloy made of these metals can be used. A frame member 30 made of a metal member can be manufactured by subjecting an ingot of such a metal member to a metal processing method such as a cutting method, a die processing method, or a punching processing method. Further, a ceramic material may be used as the frame member 30. Further, the frame member 30 may be made of one kind of material, but may have a structure in which a plurality of kinds of materials are laminated.

また、本実施形態として、半導体素子にＬＤやＰＤ等の光半導体素子、またはＬＮ変調素子等を用いる場合には、枠部材３０には、光が透過するための貫通孔３１が設けられている。貫通孔３１に光ファイバの入出力端部を挿通し、半導体素子１１から出射される光を光ファイバに入力してもよく、光ファイバから出射される光を半導体素子１１に入力してもよい。また、光ファイバの入出力端部を貫通孔３１の外方で固定し、半導体素子１１から出射される光を、貫通孔３１を透過させて外部の光ファイバに入力してもよく、光ファイバから出射される光を半導体素子１１に入力してもよい。 Further, in the present embodiment, when an optical semiconductor element such as LD or PD, an LN modulation element, or the like is used as the semiconductor element, the frame member 30 is provided with a through hole 31 for transmitting light. .. The input / output end of the optical fiber may be inserted into the through hole 31 and the light emitted from the semiconductor element 11 may be input to the optical fiber, or the light emitted from the optical fiber may be input to the semiconductor element 11. .. Further, the input / output end of the optical fiber may be fixed outside the through hole 31, and the light emitted from the semiconductor element 11 may be transmitted through the through hole 31 and input to the external optical fiber. The light emitted from the semiconductor element 11 may be input to the semiconductor element 11.

枠部材３０の側壁には長孔が形成され、この長孔を塞ぐように配線基板１が枠部材３０の側壁を貫通して設けられる。配線基板１は、枠部材３０の枠内から枠外へまたは枠外から枠内へと電気信号を入出力させる。配線基板１の第１端部配線部３ａおよび第３端部配線部４ａが枠部材３０の外部に配置され、第２端部配線部３ｂおよび第４端部配線部４ｂが枠部材３０の内部に配置される。内部に配置された第２端部配線部３ｂおよび第４端部配線部４ｂは、基体２０の載置領域に載置された半導体素子１１と枠内で接続部材によって電気的に接続される。第２端部配線部３ｂおよび第４端部配線部４ｂと半導体素子１１との間に、例えばドライバ回路等が接続される場合もある。配線基板１の第１端部配線部３ａおよび第３端部配線部４ａは、外部のフレキシブル基板などの外部回路と電気的に接続する。 An elongated hole is formed in the side wall of the frame member 30, and the wiring board 1 is provided so as to penetrate the side wall of the frame member 30 so as to close the elongated hole. The wiring board 1 inputs and outputs an electric signal from the inside of the frame member 30 to the outside of the frame or from the outside of the frame to the inside of the frame. The first end wiring portion 3a and the third end wiring portion 4a of the wiring board 1 are arranged outside the frame member 30, and the second end wiring portion 3b and the fourth end wiring portion 4b are inside the frame member 30. Is placed in. The second end wiring portion 3b and the fourth end wiring portion 4b arranged inside are electrically connected to the semiconductor element 11 mounted in the mounting region of the substrate 20 by a connecting member in the frame. For example, a driver circuit or the like may be connected between the second end wiring portion 3b and the fourth end wiring portion 4b and the semiconductor element 11. The first-end wiring portion 3a and the third-end wiring portion 4a of the wiring board 1 are electrically connected to an external circuit such as an external flexible board.

なお、配線基板１は上述実施形態とは反対に、第１端部配線部３ａおよび第３端部配線部４ａが枠部材３０の内部に配置され、第２端部配線部３ｂおよび第４端部配線部４ｂが枠部材３０の外部に配置されるように設けられてもよい。 Contrary to the above-described embodiment, the wiring board 1 has a first end wiring portion 3a and a third end wiring portion 4a arranged inside the frame member 30, and the second end wiring portion 3b and the fourth end. The portion wiring portion 4b may be provided so as to be arranged outside the frame member 30.

半導体素子１１と配線基板１との接続は、例えば、ボンディングワイヤ１２によって行なわれる。 The connection between the semiconductor element 11 and the wiring board 1 is performed by, for example, a bonding wire 12.

半導体素子パッケージ１００は、蓋部材を備えていてもよい。蓋部材は、枠部材３０の上面にろう材などの接合材によって固定される。半導体装置２００を組み立てる場合、基体２０の載置領域に半導体素子１１を載置して基体２０に固定し、半導体素子１１と配線基板１とを電気的に接続するとともに、半導体素子１１が光半導体素子の場合には、半導体素子１１との間で光信号が入出力されるように光ファイバを貫通孔３１に固定する。その後、蓋部材を枠部材３０に固定する。蓋部材の枠部材３０への固定は、たとえばシーム溶接などによって行う。 The semiconductor element package 100 may include a lid member. The lid member is fixed to the upper surface of the frame member 30 by a joining material such as a brazing material. When assembling the semiconductor device 200, the semiconductor element 11 is placed in the mounting region of the substrate 20 and fixed to the substrate 20, the semiconductor element 11 and the wiring substrate 1 are electrically connected, and the semiconductor element 11 is an optical semiconductor. In the case of an element, the optical fiber is fixed in the through hole 31 so that an optical signal is input and output from the semiconductor element 11. After that, the lid member is fixed to the frame member 30. The lid member is fixed to the frame member 30 by, for example, seam welding.

蓋部材は、半導体装置２００の内部に水分や微粒子などの侵入を防止できるものであればよく、枠部材３０と同様の金属材料やセラミックス材料などを板状に加工、成形したものを用いることができる。 The lid member may be any as long as it can prevent moisture, fine particles, etc. from entering the inside of the semiconductor device 200, and a metal material, a ceramic material, or the like similar to the frame member 30 may be processed and molded into a plate shape. it can.

ここで、例えば、半導体素子１１が光半導体素子の場合、半導体素子１１は、光ファイバの光軸上に配置する必要があるので、基体２０に半導体素子１１を直接載置せず、マウント部材１５を基体２０の載置領域に固定し、このマウント部材１５を介して載置することが好ましい。マウント部材１５は、絶縁性を有する材料であればよく、基体２０で説明
した絶縁性基板と同様のセラミックス材料などを用いることができる。 Here, for example, when the semiconductor element 11 is an optical semiconductor element, since the semiconductor element 11 needs to be arranged on the optical axis of the optical fiber, the semiconductor element 11 is not directly mounted on the substrate 20, and the mounting member 15 is used. Is preferably fixed to the mounting region of the substrate 20 and mounted via the mounting member 15. The mount member 15 may be any material having an insulating property, and a ceramic material similar to the insulating substrate described in the substrate 20 can be used.

図６に示すように、配線基板１は、第３接地配線７の第５端部７ａに接続され、誘電体基板２に埋設された接地ビア導体９および接地ビア導体９に、誘電体基板２内部で接続する内部接地導体層１０をさらに有していてもよい。第１中央配線部３ｃおよび第２中央配線部４ｃとの接続部分から伝送方向に向かって、第１屈曲部３０ａと第２屈曲部４０ａとが互いに離反し始める箇所では、第３接地配線７との距離を近付けることが難しく、結合が弱くなりインピーダンスが高くなる部分が生じてしまう。接地ビア導体９は、第５端部７ａに接続される位置に埋設されることで、第１屈曲部３０ａと第２屈曲部４０ａと電界結合しインピーダンスが高くなることを抑制することができる。 As shown in FIG. 6, the wiring board 1 is connected to the fifth end portion 7a of the third ground wiring 7, and is connected to the ground via conductor 9 and the ground via conductor 9 embedded in the dielectric substrate 2, and the dielectric substrate 2 It may further have an internal grounding conductor layer 10 connected internally. At a point where the first bent portion 30a and the second bent portion 40a start to separate from each other in the transmission direction from the connection portion between the first central wiring portion 3c and the second central wiring portion 4c, the third ground wiring 7 and It is difficult to bring the distance close to each other, and the coupling becomes weak and the impedance becomes high. By burying the grounding via conductor 9 at a position connected to the fifth end portion 7a, it is possible to prevent the impedance from increasing due to electric field coupling between the first bent portion 30a and the second bent portion 40a.

上記の半導体装置２００は、半導体素子１１として発光素子を収納した構成であるが、本発明の半導体装置は、これに限らず半導体素子１１として受光素子であるＰＤ（フォトダイオード）を収納した構成であってもよい。 The above-mentioned semiconductor device 200 has a configuration in which a light emitting element is housed as a semiconductor element 11, but the semiconductor device of the present invention is not limited to this, and has a structure in which a PD (photodiode) which is a light receiving element is housed as a semiconductor element 11. There may be.

半導体素子１１である受光素子は、光ファイバから出射された光を受光し、受光量に応じた電気信号を出力する。この電気信号は配線基板１を介して外部に出力される。外部の制御部は、半導体装置から出力された電気信号に応じた処理を実行する。 The light receiving element, which is the semiconductor element 11, receives the light emitted from the optical fiber and outputs an electric signal according to the amount of received light. This electric signal is output to the outside via the wiring board 1. The external control unit executes processing according to the electric signal output from the semiconductor device.

なお、本実施例に示す配線基板１は、光半導体素子ではない、ＬＮ変調素子、信号処理用演算素子、その他の高周波半導体素子を収納するパッケージに用いることもできる。 The wiring substrate 1 shown in this embodiment can also be used in a package that houses an LN modulation element, a signal processing arithmetic element, and other high-frequency semiconductor elements that are not optical semiconductor elements.

１ 配線基板
２ 誘電体基板
２ａ 一方主面
３ 第１伝送線路
３ａ 第１端部配線部
３ｂ 第２端部配線部
３ｃ 第１中央配線部
４ 第２伝送線路
４ａ 第３端部配線部
４ｂ 第４端部配線部
４ｃ 第２中央配線部
５ 第１接地配線
６ 第２接地配線
７ 第３接地配線
７ａ 第５端部
７ｂ 第６端部
８ 接地導体層
９ 接地ビア導体
１０ 内部接地導体層
１１ 半導体素子
１５ マウント部材
２０ 基体
３０ 枠部材
３１ 貫通孔
３０ａ 第１屈曲部
３０ｂ 第１遊端部
４０ａ 第２屈曲部
４０ｂ 第２遊端部
１００ 半導体素子パッケージ
２００ 半導体装置 1 Wiring board 2 Dielectric board 2a One main surface 3 1st transmission line 3a 1st end wiring part 3b 2nd end wiring part 3c 1st central wiring part 4 2nd transmission line 4a 3rd end wiring part 4b No. 4 End wiring part 4c 2nd central wiring part 5 1st ground wiring 6 2nd ground wiring 7 3rd ground wiring 7a 5th end 7b 6th end 8 Ground conductor layer 9 Ground via conductor 10 Internal ground conductor layer 11 Semiconductor element 15 Mount member 20 Base 30 Frame member 31 Through hole 30a First bent part 30b First free end part 40a Second bent part 40b Second free end part 100 Semiconductor element package 200 Semiconductor device

Claims (5)

誘電体基板と、
前記誘電体基板の一方主面に設けられる、差動信号伝送を行う一対の差動信号伝送線路であって、
第１端部配線部、第２端部配線部および前記第１端部配線部と前記第２端部配線部とを接続する第１中央配線部を有する第１伝送線路と、
前記第１端部配線部に第１の間隔を空けて隣接する第３端部配線部、前記第２端部配線部に前記第１の間隔よりも大きい第２の間隔を空けて配置される第４端部配線部および前記第１中央配線部に沿って設けられる、前記第３端部配線部と前記第４端部配線部とを接続する第２中央配線部を有する第２伝送線路と、からなる一対の差動信号伝送線路と、
前記一方主面に、前記第１伝送線路に沿って設けられる第１接地配線と、
前記一方主面に、前記第２伝送線路に沿って設けられる第２接地配線と、
前記一方主面の、前記第２の間隔に設けられ、前記第２端部配線部から前記第１端部配線部に向かう涙滴形状である第３接地配線と、を含んでおり、
前記第１端部配線部、前記第３端部配線部、前記第１中央配線部および前記第２中央配線部は、直線状に設けられ、前記第１中央配線部と前記第２中央配線部との間隔が、前記第１の間隔と同じであり、
前記第２端部配線部は、前記第１中央配線部に対して、屈曲して連なる第１屈曲部と、該第１屈曲部に連なるとともに、前記誘電体基板の端部側に位置する第１遊端部とを有し、
前記第４端部配線部は、前記第２中央配線部に対して、屈曲して連なる第２屈曲部と、該第２屈曲部に連なるとともに、前記誘電体基板の端部側に位置する第２遊端部とを有しており、
前記第１屈曲部、前記第２屈曲部、前記第１遊端部および前記第２遊端部は、前記第３接地配線の形状に沿うように設けられ、
前記第１遊端部と前記第２遊端部は、前記第１の間隔より大きく、前記第１屈曲部と前記第２屈曲部との最大の間隔より小さい部分であり、
前記第１屈曲部と前記第２屈曲部との最大の間隔は、前記第１遊端部と前記第２遊端部との間隔より大きい部分であることを特徴とする配線基板。 Dielectric substrate and
A pair of differential signal transmission lines provided on one main surface of the dielectric substrate for transmitting differential signals.
A first transmission line having a first end wiring portion, a second end wiring portion, a first central wiring portion connecting the first end wiring portion and the second end wiring portion, and a first transmission line.
The third end wiring portion adjacent to the first end wiring portion with a first interval is arranged, and the second end wiring portion is arranged with a second interval larger than the first interval. A second transmission line having a second central wiring portion for connecting the third end wiring portion and the fourth end wiring portion, which is provided along the fourth end wiring portion and the first central wiring portion. A pair of differential signal transmission lines consisting of,
A first grounded wiring provided along the first transmission line on one of the main surfaces,
A second ground wire provided along the second transmission line on one of the main surfaces,
It includes a third grounding wiring provided at the second interval on one of the main surfaces and having a teardrop shape from the second end wiring portion to the first end wiring portion.
The first end wiring portion, the third end wiring portion, the first central wiring portion, and the second central wiring portion are provided in a straight line, and the first central wiring portion and the second central wiring portion are provided. The interval with and is the same as the first interval,
The second end wiring portion is connected to the first bent portion and the first bent portion which is bent and connected to the first central wiring portion, and is located on the end side of the dielectric substrate. It has one free end and
The fourth end wiring portion is connected to the second bent portion and the second bent portion which is bent and connected to the second central wiring portion, and is located on the end side of the dielectric substrate. It has two free ends and
The first bent portion, the second bent portion, the first free end portion, and the second free end portion are provided so as to follow the shape of the third ground wiring.
The first free end portion and the second free end portion are portions that are larger than the first free end portion and smaller than the maximum distance between the first bent portion and the second bent portion.
A wiring board characterized in that the maximum distance between the first bent portion and the second bent portion is larger than the distance between the first free end portion and the second free end portion. 前記第１屈曲部および前記第２屈曲部は、曲線状であることを特徴とする請求項１記載の配線基板。 The wiring board according to claim 1, wherein the first bent portion and the second bent portion are curved. 前記第３接地配線は、前記第１端部配線部側の端部に接続され、前記誘電体基板に埋設された接地ビア導体をさらに含むことを特徴とする請求項１または請求項２記載の配線基板。 The first or second aspect of the invention, wherein the third grounding wiring is connected to an end portion on the first end wiring portion side and further includes a grounding via conductor embedded in the dielectric substrate. Wiring board. 半導体素子が載置される載置領域を含む主面を有する板状の基体と、
前記載置領域を囲むように前記主面に設けられる枠部材と、
請求項１〜３のいずれか１つに記載の配線基板であって、前記第１端部配線部および前記第３端部配線部が前記枠部材の外部または内部に配置され、前記第２端部配線部および前記第４端部配線部が前記枠部材の内部または外部に配置されるように、前記枠部材を貫通して設けられる配線基板と、を備えることを特徴とする半導体素子パッケージ。 A plate-shaped substrate having a main surface including a mounting area on which a semiconductor element is mounted,
A frame member provided on the main surface so as to surround the above-mentioned placement area,
The wiring board according to any one of claims 1 to 3, wherein the first end wiring portion and the third end wiring portion are arranged outside or inside the frame member, and the second end. A semiconductor device package comprising: a wiring board provided so as to penetrate the frame member so that the portion wiring portion and the fourth end portion wiring portion are arranged inside or outside the frame member. 請求項４に記載の半導体素子パッケージと、
前記載置領域に載置された半導体素子と、
一対の差動信号伝送線路、前記第１接地配線、前記第２接地配線および前記第３接地配線と、前記半導体素子とを電気的に接続する接続部材と、を備えることを特徴とする半導体装置。 The semiconductor device package according to claim 4 and
Semiconductor devices mounted in the above-mentioned placement region,
A semiconductor device including a pair of differential signal transmission lines, the first grounded wiring, the second grounded wiring, the third grounded wiring, and a connecting member for electrically connecting the semiconductor element. ..

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