JP7254011B2 - Wiring substrate, package for storing semiconductor element, and semiconductor device - Google Patents

Wiring substrate, package for storing semiconductor element, and semiconductor device Download PDF

Info

Publication number
JP7254011B2
JP7254011B2 JP2019209737A JP2019209737A JP7254011B2 JP 7254011 B2 JP7254011 B2 JP 7254011B2 JP 2019209737 A JP2019209737 A JP 2019209737A JP 2019209737 A JP2019209737 A JP 2019209737A JP 7254011 B2 JP7254011 B2 JP 7254011B2
Authority
JP
Japan
Prior art keywords
ground conductor
internal ground
conductor
wiring
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019209737A
Other languages
Japanese (ja)
Other versions
JP2021082731A (en
Inventor
好正 杉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2019209737A priority Critical patent/JP7254011B2/en
Publication of JP2021082731A publication Critical patent/JP2021082731A/en
Application granted granted Critical
Publication of JP7254011B2 publication Critical patent/JP7254011B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Structure Of Printed Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Description

本発明は、配線基体、半導体素子収納用パッケージおよび半導体装置に関する。 The present invention relates to a wiring substrate, a package for housing a semiconductor element, and a semiconductor device.

従来、ミリ波帯の高周波信号を伝送させるために用いられる配線基体として、絶縁材上に配線導体が位置するとともに、配線導体の直下に一定の距離で絶縁材を介して接地導体が位置するものがあった（特許文献１参照）。しかしながら、上述の配線基体では、配線導体に高周波信号が伝送されると、配線導体から配線導体直下の接地導体にかけて電界が発生するために、電界方向にバラツキが生じ易く、インピーダンスの整合が取り難いという問題点があった。その問題に対し、配線導体の直下に接地導体が位置せず、絶縁材のみが位置する削除部が設けられた発明が公開されている（特許文献２参照）。 Conventionally, as a wiring substrate used for transmitting high frequency signals in the millimeter wave band, a wiring conductor is positioned on an insulating material, and a ground conductor is positioned directly below the wiring conductor at a certain distance via an insulating material. There was (see patent document 1). However, in the wiring substrate described above, when a high-frequency signal is transmitted to the wiring conductor, an electric field is generated from the wiring conductor to the ground conductor immediately below the wiring conductor. There was a problem. In order to solve this problem, an invention has been disclosed in which the ground conductor is not positioned directly under the wiring conductor, and only the insulating material is positioned thereon.

特開平９－２３１０６号公報JP-A-9-23106 特開２０００－６８７１５号公報JP-A-2000-68715

しかしながら、特許文献２のような従来の配線基体では、誘電体共振が発生しやすく、高周波信号を効率的な伝送の障害となっていた。 However, in a conventional wiring substrate such as that disclosed in Patent Document 2, dielectric resonance is likely to occur, which hinders efficient transmission of high-frequency signals.

本開示の一実施形態に係る配線基体は、絶縁基体と、配線導体と、配線導体に接続され、第１方向に沿って延びたリード端子と、絶縁基体の内部に位置する内部接地導体とを有している。絶縁基体は、第１面を有するとともに絶縁材を含んでいる。配線導体は第１面上に位置する。内部接地導体は、第１面に沿って延びており、かつ、第１面に直交する第２方向における第１面からの距離Ｄ１を有する第１内部接地導体と、第１面に沿って延びており、かつ、第２方向における第１面からの距離Ｄ２が距離Ｄ１よりも大きい第２内部接地導体と、を有している。第２内部接地導体は、第１面に直交するとともに第１方向を含む断面視をした場合、第２方向において、第２内部接地導体と配線導体とは絶縁基体の絶縁材を介して対向して位置するとともに、リード端子と重なる第１部を有する。 A wiring base according to an embodiment of the present disclosure includes an insulating base, a wiring conductor, a lead terminal connected to the wiring conductor and extending along a first direction, and an internal ground conductor positioned inside the insulating base. have. The insulating base has a first surface and includes an insulating material. A wiring conductor is located on the first surface. The internal ground conductor extends along the first surface and has a distance D1 from the first surface in a second direction perpendicular to the first surface, and a first internal ground conductor extends along the first surface. and a second internal ground conductor whose distance D2 from the first surface in the second direction is greater than the distance D1. The second internal ground conductor faces the wiring conductor in the second direction with the insulating material of the insulating base interposed therebetween in a cross-sectional view that is orthogonal to the first surface and includes the first direction. and has a first portion overlapping the lead terminal.

本開示の一実施形態に係る半導体素子収納用パッケージは、上述した構成の配線基体と、載置面を有する基板と、載置面を囲んで位置する枠体と、を備える。枠体は、載置面に沿った方向に内外を貫通した篏合部を有する。配線基体は、篏合部と篏合して位置する。 A semiconductor element storage package according to an embodiment of the present disclosure includes a wiring substrate configured as described above, a substrate having a mounting surface, and a frame surrounding the mounting surface. The frame body has a mating portion penetrating inside and outside in a direction along the mounting surface. The wiring substrate is positioned so as to be fitted to the fitting portion.

本開示の一実施形態に係る半導体装置は、上述した構成の半導体素子収納用パッケージと、載置部に位置し、前記配線導体と接続された半導体素子と、を備える。 A semiconductor device according to an embodiment of the present disclosure includes a semiconductor element housing package configured as described above, and a semiconductor element located on a mounting portion and connected to the wiring conductor.

本開示の一実施形態に係る配線基体は不要共振の発生が少ない。上述の配線基体を備える本開示の一実施形態に係る半導体素子収納用パッケージ、および半導体装置は、高周波信号の伝送効率に優れる。 A wiring substrate according to an embodiment of the present disclosure generates less unwanted resonance. A semiconductor element housing package and a semiconductor device according to an embodiment of the present disclosure, which include the wiring substrate described above, are excellent in high-frequency signal transmission efficiency.

本開示の一実施形態に係る半導体素子収納用パッケージの上面斜視図である。1 is a top perspective view of a semiconductor element housing package according to an embodiment of the present disclosure; FIG. 図１に示す、半導体素子収納用パッケージの下面斜視図である。2 is a bottom perspective view of the semiconductor element housing package shown in FIG. 1; FIG. 図１に示す、半導体素子収納用パッケージの下面図である。2 is a bottom view of the semiconductor element housing package shown in FIG. 1; FIG. 本開示の一実施形態に係る配線基体の上面斜視図である。1 is a top perspective view of a wiring substrate according to an embodiment of the present disclosure; FIG. 図４に示す、配線基体の上面図である。FIG. 5 is a top view of the wiring substrate shown in FIG. 4; 図４および図５に示す、配線基体のＡ－Ａ´における断面図の一例である。FIG. 6 is an example of a cross-sectional view along AA' of the wiring substrate shown in FIGS. 4 and 5; 図４および図５に示す、配線基体のＡ－Ａ´における断面図の一例である。FIG. 6 is an example of a cross-sectional view along AA' of the wiring substrate shown in FIGS. 4 and 5; 図４および図５に示す、配線基体のＡ－Ａ´における断面図の一例である。FIG. 6 is an example of a cross-sectional view along AA' of the wiring substrate shown in FIGS. 4 and 5; 図４および図５に示す、配線基体のＡ－Ａ´における断面図の一例である。FIG. 6 is an example of a cross-sectional view along AA' of the wiring substrate shown in FIGS. 4 and 5; 本開示の一実施形態に係る半導体装置の斜視図である。1 is a perspective view of a semiconductor device according to an embodiment of the present disclosure; FIG.

以下、本発明の実施形態に係る配線基体１、半導体素子収納用パッケージ１００および半導体装置１０００について、図面を参照しながら説明する。 A wiring substrate 1, a semiconductor element housing package 100, and a semiconductor device 1000 according to embodiments of the present invention will be described below with reference to the drawings.

＜配線基体１の構成＞
図６に示す、配線基体１は、絶縁基体１０と、配線導体２０と、内部接地導体３０と、リード端子４０と、を備えている。 <Structure of Wiring Substrate 1>
A wiring substrate 1 shown in FIG. 6 includes an insulating substrate 10 , a wiring conductor 20 , an internal ground conductor 30 and a lead terminal 40 .

絶縁基体１０は絶縁材１１を含んでおり、絶縁材１１は誘電体材料からなる。誘電体材料としては、例えば、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体または窒化珪素質焼結体のようなセラミック材料、またはガラスセラミック材料を用いることができる。 The insulating substrate 10 includes an insulating material 11, and the insulating material 11 is made of a dielectric material. Examples of dielectric materials include ceramic materials such as aluminum oxide sintered bodies, mullite sintered bodies, silicon carbide sintered bodies, aluminum nitride sintered bodies and silicon nitride sintered bodies, or glass ceramics. materials can be used.

絶縁基体１０は、誘電体材料の積層によって形成されてもよい。また、絶縁基体１０は、第１面１２を有している。絶縁基体１０の形状は、例えば、第１面１２に向かう平面視において、矩形状やＵの字形であり、その大きさが２ｍｍ×２ｍｍ～２５ｍｍ×５０ｍｍで、高さが１ｍｍ～１０ｍｍの範囲であってもよい。絶縁基体１０および第１面１２の大きさは適宜設定できる。なお、本明細書において、第１面１２を上面とし、第１面１２と反対側の面を下面として説明する場合がある。 The insulating substrate 10 may be formed by lamination of dielectric materials. The insulating base 10 also has a first surface 12 . The shape of the insulating base 10 is, for example, a rectangular shape or a U shape in a plan view toward the first surface 12, with a size of 2 mm×2 mm to 25 mm×50 mm and a height of 1 mm to 10 mm. There may be. The sizes of the insulating substrate 10 and the first surface 12 can be appropriately set. In this specification, the first surface 12 may be referred to as the upper surface, and the surface opposite to the first surface 12 may be referred to as the lower surface.

第１面１２上には、第１面１２に対する平面視において第１面１２の内側を始点として絶縁基体１０の外側に向かって延びる配線導体２０が位置している。なお、リード端子４０が延びる方向を本明細書内において第１方向と定義する。そして、第１方向に直交する方向を第２方向と定義する。 A wiring conductor 20 is positioned on the first surface 12 and extends outward from the insulating substrate 10 from the inner side of the first surface 12 as viewed from the top of the first surface 12 . Note that the direction in which the lead terminal 40 extends is defined as the first direction in this specification. A direction perpendicular to the first direction is defined as a second direction.

本開示における配線導体２０は、高周波信号（例えば１０～１００ＧＨｚ）が伝送される伝送路であり、配線導体２０と接続するリード端子４０は信号端子として機能する。配線導体２０は、第１方向と直交する幅が０．０５ｍｍ～２ｍｍで、第１方向に沿った長さが０．５ｍｍ～２０ｍｍで、厚みは０．０１ｍｍ～０．１ｍｍあってもよい。なお、配線導体２０の幅、長さ、厚みと併せて適宜設定できる。 The wiring conductor 20 in the present disclosure is a transmission line through which a high frequency signal (eg, 10 to 100 GHz) is transmitted, and the lead terminal 40 connected to the wiring conductor 20 functions as a signal terminal. The wiring conductor 20 may have a width of 0.05 mm to 2 mm perpendicular to the first direction, a length of 0.5 mm to 20 mm along the first direction, and a thickness of 0.01 mm to 0.1 mm. The width, length, and thickness of the wiring conductor 20 can be set as appropriate.

第１面１２には、グランド電位を有する接地導体２１が位置していてもよい。接地導体２１は、配線導体２０に沿った部分である第１領域２１１を有していてもよい。接地導体２１と接続されるリード端子４０は接地端子として機能する。第１領域２１１は、幅が０．０５ｍｍ～２ｍｍで、長さが０．５ｍｍ～２０ｍｍで、厚みが０．０１ｍｍ～０．１ｍｍあってもよい。なお、接地導体２１の第１領域２１１の幅、長さ、厚みは適宜設定できる。 A ground conductor 21 having a ground potential may be located on the first surface 12 . The ground conductor 21 may have a first region 211 along the wiring conductor 20 . A lead terminal 40 connected to the ground conductor 21 functions as a ground terminal. The first region 211 may have a width of 0.05 mm to 2 mm, a length of 0.5 mm to 20 mm, and a thickness of 0.01 mm to 0.1 mm. Note that the width, length, and thickness of the first region 211 of the ground conductor 21 can be appropriately set.

配線導体２０および接地導体２１は、それぞれ複数あってもよく、交互に配列されてい
ても、差動となるように配列されていてもよい。具体的に、差動とは、平面視において、接地導体２１、配線導体２０、配線導体２０、接地導体２１の順に並んでいることを指す。配線導体２０と接地導体２１とが差動となるように配列されることで、耐ノイズ性が向上する。接地導体２１は、配線導体２０に沿う第１領域２１１に繋がり、第１領域２１１を含んで配線導体２０を囲む第２領域２１２を更に有していてもよい。第２領域２１２を有することによって、グランドとして機能する領域が広くなるため、高周波特性が向上する。 A plurality of wiring conductors 20 and ground conductors 21 may be provided, and may be arranged alternately or differentially. Specifically, differential means that the ground conductor 21, the wiring conductor 20, the wiring conductor 20, and the ground conductor 21 are arranged in this order in plan view. By arranging the wiring conductors 20 and the ground conductors 21 in a differential manner, noise resistance is improved. The ground conductor 21 may further have a second region 212 connected to the first region 211 along the wiring conductor 20 and surrounding the wiring conductor 20 including the first region 211 . Having the second region 212 widens the region functioning as the ground, thereby improving the high-frequency characteristics.

配線導体２０および接地導体２１は第１面１２に形成されたメタライズ層であってもよい。メタライズ層は、たとえば、タングステン、モリブデンおよびマンガンなどの金属材料からなり、更にニッケルめっきまたは金めっきなどが施されていてもよい。配線導体２０または接地導体２１と、リード端子４０とは接合材によって接続されてもよい。本実施形態で用いられる接合材は、例えば、半田やろう材である。 The wiring conductor 20 and the ground conductor 21 may be metallized layers formed on the first surface 12 . The metallized layer is made of, for example, a metal material such as tungsten, molybdenum and manganese, and may be plated with nickel or gold. The wiring conductor 20 or the ground conductor 21 and the lead terminal 40 may be connected by a bonding material. The bonding material used in this embodiment is, for example, solder or brazing material.

配線導体２０間に凹部１３、あるいは配線導体２０および接地導体２１の間に凹部１４が位置していてもよい。凹部１３、１４が形成する空間は電気的に絶縁されていることで、配線導体２０近傍の実効的な誘電率が低くなるため、インピーダンスの整合を行いやすくなる。その結果、高周波信号の周波数特性が向上する。 The recess 13 may be located between the wiring conductors 20 or the recess 14 may be located between the wiring conductor 20 and the ground conductor 21 . Since the spaces formed by the recesses 13 and 14 are electrically insulated, the effective dielectric constant in the vicinity of the wiring conductor 20 is lowered, thereby facilitating impedance matching. As a result, the frequency characteristics of high frequency signals are improved.

凹部１３、１４の形状は特に限定されないが、領域を大きくするために、第１方向に直交する断面視において、内壁をテーパ状または逆テーパ状としてもよい。凹部１３、１４の領域を大きくすることにより、配線導体２０近傍の実効的な誘電率が低くすることができる。その結果、インピーダンス整合を行いやすくなり、高周波信号の周波数特性が向上する。 The shape of the recesses 13 and 14 is not particularly limited, but the inner walls may be tapered or reverse tapered in a cross-sectional view orthogonal to the first direction in order to enlarge the area. By enlarging the areas of the recesses 13 and 14, the effective dielectric constant in the vicinity of the wiring conductor 20 can be lowered. As a result, it becomes easier to perform impedance matching, and the frequency characteristics of high frequency signals are improved.

凹部１３、１４は、第１面１２に向かう平面視において、矩形状であってもよい。また、凹部１３、１４は半円形状、あるいは、半長円形状であってもよい。これによって凹部１３、１４の端部におけるクラックの発生を低減できる。また、図５に示すように、第１面１２に向かう平面視において、凹部１３、１４の端部に更に窪み１５を有していてもよい。これによって、配線導体２０近傍の実効的な誘電率が更に低くなるため、その結果、インピーダンス整合を行いやすくなり、高周波信号の周波数特性が向上する。なお、窪み１５は、第１面１２に向かう平面視において、矩形状であってもよい。また、窪み１５は半円形状、あるいは、半長円形状であってもよい。 The concave portions 13 and 14 may have a rectangular shape in plan view toward the first surface 12 . Also, the concave portions 13 and 14 may be semi-circular or semi-oval. As a result, the occurrence of cracks at the ends of the recesses 13 and 14 can be reduced. Further, as shown in FIG. 5, in a plan view toward the first surface 12, the recesses 13 and 14 may further have recesses 15 at the ends thereof. As a result, the effective dielectric constant in the vicinity of the wiring conductor 20 is further lowered, thereby facilitating impedance matching and improving the frequency characteristics of high-frequency signals. Note that the recess 15 may have a rectangular shape in plan view toward the first surface 12 . Also, the depression 15 may be semi-circular or semi-oval.

リード端子４０は、外部の電気回路基板等と電気的に接続するための部材である。リード端子４０は、ろう材等の接合材を介して、配線導体２０上あるいは接地導体２１上に接続されてもよい。隣接する配線導体２０あるいは接地導体２１同士を、間を空けて設けることで、隣接する配線導体２０あるいは接地導体２１同士を電気的に絶縁し、電磁気的な結合を抑制することができる。そして、各リード端子４０を配線導体２０あるいは接地導体２１に設けることで、隣接するリード端子４０同士は、電気的に絶縁しているとともに、電磁気的な結合が抑制された状態で外部の電気回路基板と電気的に接続することができる。 The lead terminal 40 is a member for electrically connecting to an external electric circuit board or the like. The lead terminal 40 may be connected onto the wiring conductor 20 or the ground conductor 21 via a bonding material such as brazing material. By providing a space between adjacent wiring conductors 20 or ground conductors 21, the adjacent wiring conductors 20 or ground conductors 21 can be electrically insulated and electromagnetic coupling can be suppressed. By providing each lead terminal 40 on the wiring conductor 20 or the ground conductor 21, the adjacent lead terminals 40 are electrically insulated from each other, and the external electric circuit is connected in a state in which electromagnetic coupling is suppressed. It can be electrically connected to the substrate.

リード端子４０は、第１方向に直交する断面視における形状が、例えば矩形状であっても円形状であってもよい。また、図６や図７のように、第１面１２に直交するとともに第１方向を含む断面視において、第１面１２上に位置する配線導体２０あるいは接地導体２１と接続する接続部４１と、第１面１２に対して傾く傾斜部４２と、を有する形状であってもよい。この形状であることによって、半導体収納用パッケージ１００を、リード端子４０を介してプリント板などに実装した際に、半導体収納用パッケージ１００とプリント板との間に発生する応力を緩和できる。 The shape of the lead terminal 40 in a cross-sectional view perpendicular to the first direction may be, for example, a rectangular shape or a circular shape. 6 and 7, in a cross-sectional view orthogonal to the first surface 12 and including the first direction, the connection portion 41 connected to the wiring conductor 20 or the ground conductor 21 located on the first surface 12 and the , and an inclined portion 42 inclined with respect to the first surface 12 . With this shape, when the semiconductor housing package 100 is mounted on a printed board or the like via the lead terminals 40, the stress generated between the semiconductor housing package 100 and the printed board can be alleviated.

接続部４１の両端部のうち、第１面１２に向かう平面視において、絶縁基体１０の内側に位置する端部を第１端部４１１とする。また、接続部４１の両端部のうち、絶縁基体１０の外側に位置する端部を第２端部４１２とする。 Of the two ends of the connection portion 41 , the end positioned inside the insulating base 10 in a plan view toward the first surface 12 is called a first end 411 . In addition, of the both end portions of the connection portion 41 , the end portion positioned outside the insulating base 10 is referred to as a second end portion 412 .

傾斜部４２は、前記第１面に直交するとともに前記第１方向を含む断面視をした場合、第２方向において、第１面１２と重なっている部分を有していてもよい。このとき、傾斜部４２は、第２端４１２と連続して位置する。 The inclined portion 42 may have a portion that overlaps the first surface 12 in the second direction in a cross-sectional view that is orthogonal to the first surface and includes the first direction. At this time, the inclined portion 42 is positioned continuously with the second end 412 .

また、リード端子４０は、図８や図９のような、直線形状であってもよい。直線形状であることによって、リード端子４０の長さを短く形成することができ、高周波特性が向上する。 Also, the lead terminal 40 may be linear as shown in FIGS. Due to the linear shape, the length of the lead terminal 40 can be shortened, and the high frequency characteristics are improved.

内部接地導体３０は、絶縁基体１０の内部、あるいは絶縁層間に位置している。内部接地導体３０は、少なくとも第１内部接地導体３１と第２内部接地導体と３２を有している。内部接地導体３０はグランド電位を有しており、接地導体２１と貫通導体３４を介して電気的に接続されてもよい。また、複数の内部接地導体３０は貫通導体３４を介して電気的に接続されていてもよい。これによって、グランドとして機能する領域が広くなるため、高周波特性が向上する。貫通導体３４は、例えば、タングステン、モリブデンおよびマンガンなどの金属材料を用いることができる。内部接地導体３０は、絶縁層上に形成されたメタライズ層であってもよい。メタライズ層は、例えば、タングステン、モリブデンおよびマンガンなどの金属材料からなり、更にニッケルめっきまたは金めっきなどが施されていてもよい。 The internal ground conductor 30 is located inside the insulating substrate 10 or between insulating layers. The internal ground conductor 30 has at least a first internal ground conductor 31 and a second internal ground conductor 32 . The internal ground conductor 30 has a ground potential and may be electrically connected to the ground conductor 21 via the penetrating conductor 34 . Also, the plurality of internal ground conductors 30 may be electrically connected via through conductors 34 . As a result, the area functioning as the ground is widened, so that the high frequency characteristics are improved. Metal materials such as tungsten, molybdenum, and manganese can be used for the through conductors 34, for example. The internal ground conductor 30 may be a metallized layer formed on an insulating layer. The metallized layer is made of, for example, a metal material such as tungsten, molybdenum and manganese, and may be plated with nickel or gold.

貫通導体３４の長さは、０より大きく、配線導体２０が伝送する信号の周波数における実効波長の１／４以下であってもよい。これによって、高周波信号が各内部接地導体３０間から漏れることを防ぐことができる。なお、本明細書における実効波長とは、使用する高周波信号の波長を、絶縁基板１０の比誘電率の平方根で割ることによって求められるものである。 The length of the penetrating conductor 34 may be greater than 0 and less than or equal to 1/4 of the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 . This can prevent high-frequency signals from leaking from between the internal ground conductors 30 . The effective wavelength in this specification is obtained by dividing the wavelength of the high-frequency signal to be used by the square root of the dielectric constant of the insulating substrate 10 .

第１内部接地導体３１は、第１面１２からの第２方向における距離が例えば０．０５ｍｍ～０．３ｍｍであってもよい。本明細書において、第１内部接地導体３１の第２方向における距離をＤ１とする。Ｄ１は、０より大きく、配線導体２０が伝送する信号の周波数における実効波長以下であってもよい。Ｄ１が伝送される実効波長の以下であることによって、断面視における第１内部接地導体３１と第１面１２の間において、絶縁基体１０と配線導体２０との共振の発生を低減することができる。その結果、共振に伴う伝送損失を低減することができ、高周波信号を良好に伝送することができる。 The distance of the first internal ground conductor 31 in the second direction from the first surface 12 may be, for example, 0.05 mm to 0.3 mm. In this specification, the distance of the first internal ground conductor 31 in the second direction is defined as D1. D1 may be greater than 0 and less than or equal to the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 . By making D1 equal to or less than the effective wavelength of transmission, it is possible to reduce the occurrence of resonance between the insulating substrate 10 and the wiring conductor 20 between the first internal ground conductor 31 and the first surface 12 in a cross-sectional view. . As a result, transmission loss due to resonance can be reduced, and high-frequency signals can be transmitted satisfactorily.

第２内部接地導体３２は、第１面１２からの第２方向における距離が例えば０．１ｍｍ～０．６ｍｍであってもよい。本明細書において、第１内部接地導体３１の第２方向における距離をＤ２とする。Ｄ２はＤ１よりも第２方向における距離が大きい。また、Ｄ２は、０より大きく、配線導体２０が伝送する信号の周波数における実効波長以下であってもよい。 The second internal ground conductor 32 may have a distance of, for example, 0.1 mm to 0.6 mm from the first surface 12 in the second direction. In this specification, the distance of the first internal ground conductor 31 in the second direction is defined as D2. D2 has a greater distance in the second direction than D1. Also, D2 may be greater than 0 and less than or equal to the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 .

第２内部接地導体３２は、第１部３２３を有している。第１部３２３は、第１面１２に直交するとともに第１方向を含む断面視をしたとき、第２方向において、第２内部接地導体３２と配線導体２０とは絶縁基体１０の絶縁材１１を介して対向して位置し、かつ、リード端子４０と重なる。つまり、第１面１２に直交するとともに第１方向を含む断面視において階段状になっている。 The second internal ground conductor 32 has a first portion 323 . When the first part 323 is cross-sectionally viewed perpendicular to the first surface 12 and including the first direction, the second internal ground conductor 32 and the wiring conductor 20 are positioned so that the insulating material 11 of the insulating substrate 10 is in contact with the second internal ground conductor 32 and the wiring conductor 20 in the second direction. , and overlap the lead terminal 40 . That is, it has a stepped shape in a cross-sectional view that is orthogonal to the first surface 12 and includes the first direction.

配線基体１は、外部環境との比誘電率の影響をうけるため、配線導体２０の第１方向に延びている部分の直下に位置するほど共振が発生しやすい。これに対し、Ｄ２がＤ１より大きいことで、第１面１２に直交するとともに第１方向を含む断面視で、第１内部接地導体３１よりも第２方向における距離が大きい第２内部接地導体３２と、第１面１２上に位置する配線導体２０とが、絶縁材１１を介して対向することになる。その結果、配線導体２０と絶縁基体１０との共振の発生を低減できる。また、Ｄ２が配線導体２０の実効波長以下であることで、配線導体２０と絶縁基体１０との共振の発生を一層低減できる。 Since the wiring substrate 1 is affected by the relative dielectric constant of the external environment, resonance is more likely to occur the closer it is positioned directly below the portion of the wiring conductor 20 extending in the first direction. On the other hand, since D2 is larger than D1, the second internal ground conductor 32 has a larger distance in the second direction than the first internal ground conductor 31 in a cross-sectional view perpendicular to the first surface 12 and including the first direction. , and the wiring conductor 20 positioned on the first surface 12 face each other with the insulating material 11 interposed therebetween. As a result, the occurrence of resonance between the wiring conductor 20 and the insulating substrate 10 can be reduced. Further, since D2 is equal to or less than the effective wavelength of the wiring conductor 20, occurrence of resonance between the wiring conductor 20 and the insulating substrate 10 can be further reduced.

第１部３２３の第１方向に沿う方向における長さは、０より大きく、配線導体２０が伝送する信号の周波数における実効波長の１／４以下であってもよい。これによって、第１部３２３の長さによって生じる不要共振を抑制できる。本明細書において、第１内部接地導体３１の第１方向に沿う方向における長さをＬ１とする。 The length of the first portion 323 along the first direction may be greater than 0 and less than or equal to 1/4 of the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 . Thereby, unnecessary resonance caused by the length of the first portion 323 can be suppressed. In this specification, L1 is the length of the first internal ground conductor 31 in the first direction.

第２方向において、第１内部接地導体３１から第２内部接地導体３２までの距離は例えば、０．０５ｍｍ～０．３ｍｍであってもよい。本明細書において、第１内部接地導体３１から第２内部接地導体３２までの距離をＤ３とする。Ｄ３は、０より大きく、配線導体２０が伝送する信号の周波数における実効波長の１／４以下であってもよい。これによって、高周波信号が第１内部接地導体３１と第２内部接地導体３２との間から漏れることを防ぐことができる。 In the second direction, the distance from the first internal ground conductor 31 to the second internal ground conductor 32 may be, for example, 0.05 mm to 0.3 mm. In this specification, the distance from the first internal ground conductor 31 to the second internal ground conductor 32 is defined as D3. D3 may be greater than 0 and less than or equal to 1/4 of the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 . This can prevent the high-frequency signal from leaking from between the first internal ground conductor 31 and the second internal ground conductor 32 .

内部接地導体３０は、第１面１２に平行に延びる第３内部接地導体３３を更に有していてもよい。第３内部接地導体３３は、第１面１２からの第２方向における距離が例えば０．１５ｍｍ～０．９ｍｍであってもよい。本明細書において、第３内部接地導体３３の第２方向における距離をＤ４とする。Ｄ４はＤ２よりも第２方向における長さが大きくてもよいまた、Ｄ４は、０より大きく、配線導体２０が伝送する信号の周波数における実効波長以下であってもよい。 The internal ground conductor 30 may further have a third internal ground conductor 33 extending parallel to the first surface 12 . The distance of the third internal ground conductor 33 in the second direction from the first surface 12 may be, for example, 0.15 mm to 0.9 mm. In this specification, the distance of the third internal ground conductor 33 in the second direction is defined as D4. D4 may be longer than D2 in the second direction, and D4 may be greater than 0 and less than or equal to the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 .

第３内部接地導体３３は、第２部３３３を有していてもよい。第２部３３３は、第１面１２に直交するとともに第１方向を含む断面視したとき、第２方向において、第３内部接地導体３３と配線導体２０とは絶縁基体１０の絶縁材１１を介して対向して位置し、かつ、リード端子４０と重なる。つまり、断面視において階段状になっている。なお、第３内部接地導体３３の第２方向における直下には、第２部３３３を有する第３内部接地導体３３が更に位置していてもよい。 The third internal ground conductor 33 may have a second portion 333 . When the second portion 333 is cross-sectionally viewed perpendicular to the first surface 12 and including the first direction, the third internal ground conductor 33 and the wiring conductor 20 are separated from each other by the insulating material 11 of the insulating base 10 in the second direction. , and overlap the lead terminal 40 . That is, it has a stepped shape in a cross-sectional view. A third internal ground conductor 33 having a second portion 333 may be further positioned immediately below the third internal ground conductor 33 in the second direction.

第２部３３３の第１方向に沿う方向における長さは、０より大きく、配線導体２０が伝送する信号の周波数における実効波長の１／４以下であってもよい。これによって、第２部３３３の長さによって生じる不要共振を抑制できる。本明細書において、第２部３３３の第１方向に沿う方向における長さをＬ２とする。 The length of the second portion 333 along the first direction may be greater than 0 and less than or equal to 1/4 of the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 . Thereby, unnecessary resonance caused by the length of the second portion 333 can be suppressed. In this specification, the length of the second portion 333 along the first direction is L2.

Ｄ４がＤ２より大きいことで、第１面１２に直交するとともに第１方向を含む断面視で、第２内部接地導体３２よりも第２方向における距離が大きい第３内部接地導体３３と、第１面１２上に位置する配線導体２０とが、絶縁材１１を介して対向する。その結果、配線導体２０と絶縁基体１０との共振の発生を低減できる。また、Ｄ４が配線導体２０の実効波長以下であることで、配線導体２０と絶縁基体１０との共振の発生を一層低減できる。 Since D4 is larger than D2, the third internal ground conductor 33 having a greater distance in the second direction than the second internal ground conductor 32 in a cross-sectional view orthogonal to the first surface 12 and including the first direction The wiring conductors 20 positioned on the surface 12 face each other with the insulating material 11 interposed therebetween. As a result, the occurrence of resonance between the wiring conductor 20 and the insulating substrate 10 can be reduced. Further, since D4 is equal to or less than the effective wavelength of the wiring conductor 20, occurrence of resonance between the wiring conductor 20 and the insulating substrate 10 can be further reduced.

第２方向における第２内部接地導体３２から第３内部接地導体３３までの距離は例えば、０．０５ｍｍ～０．３ｍｍであってもよい。本明細書において、第２方向における第２内部接地導体３２から第３内部接地導体３３までの距離をＤ５とする。Ｄ５は、０より大きく、配線導体２０が伝送する信号の周波数における実効波長の１／４以下であってもよ
い。これによって、高周波信号が第２内部接地導体３２と第３内部接地導体３３との間から漏れることを防ぐことができる。 The distance from the second internal ground conductor 32 to the third internal ground conductor 33 in the second direction may be, for example, 0.05 mm to 0.3 mm. In this specification, D5 is the distance from the second internal ground conductor 32 to the third internal ground conductor 33 in the second direction. D5 may be greater than 0 and less than or equal to 1/4 of the effective wavelength at the frequency of the signal transmitted by the wiring conductor 20 . This can prevent the high-frequency signal from leaking from between the second internal ground conductor 32 and the third internal ground conductor 33 .

また第１内部接地導体３１は、第１面１２に直交するとともに第１方向を含む断面視において、図６や図８のように、リード端子４０の接続部４１と重なって位置しなくてもよい。また、図７や図９のように、リード端子４０の接続部４１の一部と重なって位置していてもよい。第１内部接地導体３１がリード端子４０と重なって位置しない場合、リード端子４０の接続部４１の第１端部４１１から第２方向に伸ばした垂線が、第１内部接地導体３１の端部と繋がっていてもよい。これによって、インピーダンスの変化が大きいリード端子４０の第１端部４１１において、第１内部接地導体３１よりも第２方向における距離が大きい第２内部接地導体３２がリード端子４０接続部４１の直下に位置することになるため、インピーダンスの変化を緩和でき、高周波特性が向上され、不要な共振の発生を低減することができる。リード端子４０の接続部４１の一部と重なって位置している場合、配線導体２０と各内部接地導体３０との間において、絶縁材１１を介して位置する絶縁基体１０の領域を小さくできるので、絶縁基体１０内で生じる不要共振を高周波にシフトできる。その結果、不要な共振の発生を低減できる。 Further, the first internal ground conductor 31 does not have to overlap the connection portion 41 of the lead terminal 40 as shown in FIGS. good. Moreover, as shown in FIGS. 7 and 9, the lead terminal 40 may be positioned so as to partially overlap with the connection portion 41 of the lead terminal 40 . When the first internal ground conductor 31 does not overlap with the lead terminal 40 , the perpendicular extending in the second direction from the first end 411 of the connection portion 41 of the lead terminal 40 is aligned with the end of the first internal ground conductor 31 . may be connected. As a result, at the first end portion 411 of the lead terminal 40 where the change in impedance is large, the second internal ground conductor 32 having a larger distance in the second direction than the first internal ground conductor 31 is directly below the lead terminal 40 connecting portion 41. Since it is positioned, the change in impedance can be mitigated, the high frequency characteristics can be improved, and the occurrence of unnecessary resonance can be reduced. When positioned so as to overlap with a portion of the connection portion 41 of the lead terminal 40, the area of the insulating base 10 positioned between the wiring conductor 20 and each internal ground conductor 30 via the insulating material 11 can be reduced. , the unwanted resonance generated in the insulating substrate 10 can be shifted to a high frequency. As a result, unnecessary resonance can be reduced.

第２内部接地導体３２の第１部３２３は、第１面１２に直交するとともに第１方向を含む断面視において、リード端子４０の接続部４１の一部分と重なるように位置していてもよい。言い換えると、接続部４１の第２端部４１２から第２方向に伸ばした垂線が、第１部３２３と接しなくてもよい。このとき、第２端部４１２からの垂線は第２部３３３と接してもよい。言い換えると、第２内部接地導体３２よりも第２方向における距離が長い第３内部接地導体３３の第２部３３３がリード端子４０の接続部４１の直下に位置してもよい。これによって、第２部３３３と第１面１２との間において、第２内部接地導体３２よりも第２方向における距離が大きい第３内部接地導体３３と配線導体２０とが、絶縁材１１を介して対向する。その結果、インピーダンスの変化を緩和でき、高周波特性が向上され不要な共振の発生を低減することができる。 The first portion 323 of the second internal ground conductor 32 may be positioned so as to partially overlap the connecting portion 41 of the lead terminal 40 in a cross-sectional view orthogonal to the first surface 12 and including the first direction. In other words, the perpendicular extending in the second direction from the second end portion 412 of the connecting portion 41 does not have to contact the first portion 323 . At this time, a perpendicular from the second end 412 may contact the second portion 333 . In other words, the second portion 333 of the third internal ground conductor 33 having a longer distance in the second direction than the second internal ground conductor 32 may be positioned directly below the connection portion 41 of the lead terminal 40 . As a result, between the second portion 333 and the first surface 12, the third internal ground conductor 33 and the wiring conductor 20, which have a larger distance in the second direction than the second internal ground conductor 32, are separated through the insulating material 11. to face each other. As a result, changes in impedance can be moderated, high frequency characteristics can be improved, and occurrence of unnecessary resonance can be reduced.

また、第２内部接地導体３２の第１部３２３は、第１面１２に直交するとともに第１方向を含む断面視において、リード端子４０の接続部４１の全部分と重なるように位置していてもよい。言い換えると、接続部４１の第２端部４１２から第２方向に伸ばした垂線が、第１部３２３と接してもよい。これによって、リード端子４０の接続部４１の直下には、第１内部接地導体３１よりも第２方向における距離が長い第２内部接地導体３２が位置することになる。その結果、リード端子４０の接続部４１直下のインピーダンスの変化を所望の値に整合しやすくなるので、高周波特性が向上され、不要な共振の発生を低減することができる。なお、第１面１２に直交するとともに第１方向を含む断面視において、リード端子が直線形状である場合、第２内部接地導体は、絶縁基体１０の端部にまで延びて位置していてもよい。 Also, the first portion 323 of the second internal ground conductor 32 is positioned so as to overlap the entire connection portion 41 of the lead terminal 40 in a cross-sectional view perpendicular to the first surface 12 and including the first direction. good too. In other words, a perpendicular extending in the second direction from the second end 412 of the connecting portion 41 may contact the first portion 323 . As a result, the second internal ground conductor 32 having a longer distance in the second direction than the first internal ground conductor 31 is positioned directly below the connection portion 41 of the lead terminal 40 . As a result, it becomes easier to match the change in impedance immediately below the connecting portion 41 of the lead terminal 40 to a desired value, thereby improving the high frequency characteristics and reducing the occurrence of unnecessary resonance. When the lead terminal has a linear shape in a cross-sectional view perpendicular to the first surface 12 and including the first direction, the second internal ground conductor may extend to the end of the insulating substrate 10. good.

第３内部接地導体３３の第２部３３３は、第１面１２に直交するとともに第１方向を含む断面視において、リード端子４０の接続部４１の全部分と重なるように位置していてもよい。言い換えると、接続部４１の第２端部４１２から第２方向に伸ばした垂線が、第２部３３３と接してもよい。これによって、リード端子４０の接続部４１の直下には、第１内部接地導体３１および第２内部接地導体３２よりも第２方向における距離が長い第３内部接地導体３３が位置することになる。言い換えると、第２内部接地導体３２よりも第２方向における距離が大きい第３内部接地導体３３と、第１面１２上に位置する配線導体２０とが、絶縁材１１を介して対向する。その結果、インピーダンスの変化を緩和でき、高周波特性が向上され、不要な共振の発生を低減することができる。なお、第１面１２に直交するとともに第１方向を含む断面視において、リード端子４０が直線形状である場合、第３内部接地導体３３は、絶縁基体１０の端部にまで延びて位置していてもよい。これに
より、リード端子４０の接続部４１直下のインピーダンスの変化を所望の値に整合でき、高周波特性が向上され、不要な共振の発生を低減することができる。 The second portion 333 of the third internal ground conductor 33 may be positioned so as to overlap the entire connection portion 41 of the lead terminal 40 in a cross-sectional view perpendicular to the first surface 12 and including the first direction. . In other words, a perpendicular extending in the second direction from the second end 412 of the connecting portion 41 may contact the second portion 333 . As a result, the third internal ground conductor 33 having a longer distance in the second direction than the first internal ground conductor 31 and the second internal ground conductor 32 is positioned directly below the connection portion 41 of the lead terminal 40 . In other words, the third internal ground conductor 33 having a larger distance in the second direction than the second internal ground conductor 32 and the wiring conductor 20 located on the first surface 12 face each other with the insulating material 11 interposed therebetween. As a result, changes in impedance can be moderated, high frequency characteristics can be improved, and occurrence of unnecessary resonance can be reduced. When the lead terminal 40 has a linear shape in a cross-sectional view perpendicular to the first surface 12 and including the first direction, the third internal ground conductor 33 extends to the end of the insulating base 10 and is positioned. may As a result, the change in impedance immediately below the connection portion 41 of the lead terminal 40 can be matched to a desired value, the high frequency characteristics can be improved, and the occurrence of unnecessary resonance can be reduced.

第３内部接地導体３３の第２方向における直下に、第２部３３３を有する第３内部接地導体３３が更に位置していている場合、第３内部接地導体３３の第２部３３３は、第１面１２に直交するとともに第１方向を含む断面視において、リード端子４０の接続部４１の一部分と重なるように位置していてもよい。これによって、リード端子４０の接続部４１の直下には、第３内部接地導体３１の第２部３３３よりも第２方向における距離が更に長い第３内部接地導体３３の第２部３３３が位置し、その第２部３３３と絶縁材１１を介して、第２部３３３と配線導体２０とが対向する。その結果、インピーダンスの変化を緩和でき、高周波特性が向上され不要な共振の発生を低減することができる。 When the third internal ground conductor 33 having the second portion 333 is further positioned immediately below the third internal ground conductor 33 in the second direction, the second portion 333 of the third internal ground conductor 33 is the first It may be located so as to partially overlap the connection portion 41 of the lead terminal 40 in a cross-sectional view that is orthogonal to the surface 12 and includes the first direction. As a result, the second portion 333 of the third internal ground conductor 33 having a longer distance in the second direction than the second portion 333 of the third internal ground conductor 31 is positioned directly below the connection portion 41 of the lead terminal 40 . , the second portion 333 and the wiring conductor 20 face each other with the second portion 333 and the insulating material 11 interposed therebetween. As a result, changes in impedance can be moderated, high frequency characteristics can be improved, and occurrence of unnecessary resonance can be reduced.

＜配線基体１の製造方法＞
以下に、配線基体１の製造方法の一例について説明する。配線基体１は、絶縁基体１０と、配線導体２０と、内部接地導体３０を備えている。まず、絶縁基体１０の製造方法の一例について説明する。絶縁基体１０が、例えば、複数の絶縁層が酸化アルミニウム質焼結体からなる場合であれば、次のようにして絶縁基体１０が製作される。まず、酸化アルミニウムおよび酸化ケイ素等の原料粉末に適当な有機バインダおよび溶剤等を添加混合してスラリーを作製する。次に、スラリーをドクターブレード法等の成形法でシート状に成形することにより複数枚のセラミックグリーンシートを作製する。このとき、グリーンシートの一部に凹部１３、１４および窪み１５となる切欠きを形成してもよい。 <Manufacturing Method of Wiring Substrate 1>
An example of a method for manufacturing the wiring substrate 1 will be described below. The wiring substrate 1 includes an insulating substrate 10 , a wiring conductor 20 and an internal ground conductor 30 . First, an example of a method for manufacturing the insulating substrate 10 will be described. For example, if the insulating substrate 10 has a plurality of insulating layers made of an aluminum oxide sintered body, the insulating substrate 10 is manufactured as follows. First, raw material powders such as aluminum oxide and silicon oxide are added and mixed with an appropriate organic binder and solvent to prepare a slurry. Next, the slurry is formed into sheets by a forming method such as a doctor blade method to produce a plurality of ceramic green sheets. At this time, notches that become the recesses 13 and 14 and the depression 15 may be formed in a part of the green sheet.

次に、配線導体２０、内部接地導体３０の製造方法の一例について説明する。配線導体２０、内部接地導体３０、ならびに接地導体２１、第１内部接地導体３１、第２内部接地導体３２、第３内部接地導体３３は、例えば、タングステンやモリブデン、マンガン等の高融点の金属からなるメタライズ層からなる場合であれば、次のようにして形成することができる。すなわち、まず高融点の金属の粉末を有機溶剤およびバインダとともによく混ざるように練って作製した金属ペーストを、絶縁層の上面や下面となるセラミックグリーンシートの所定部位にスクリーン印刷等の方法で印刷する。その後、これらの金属ペーストが印刷されたセラミックグリーンシートを積層するとともに圧着し、同時焼成する。以上の工程によって、絶縁基体１０の第１面１２および絶縁基体１０の内層に、メタライズ層が配線導体２０、接地導体２１、内部接地導体３０、第１内部接地導体３１、第２内部接地導体３２、ならびに第３内部接地導体３３として被着される。このとき、凹部１３、１４または窪み１５の内側面および底面に、金属ペーストを印刷することで、凹部１３、１４または窪み１５の内側面および底面にもメタライズ層を形成することができる。また、各導体には、表面にニッケルめっきまたは金めっきを設けてもよい。 Next, an example of a method for manufacturing the wiring conductor 20 and the internal ground conductor 30 will be described. The wiring conductor 20, the internal ground conductor 30, the ground conductor 21, the first internal ground conductor 31, the second internal ground conductor 32, and the third internal ground conductor 33 are made of metal with a high melting point, such as tungsten, molybdenum, and manganese. If it consists of a metallized layer, it can be formed as follows. That is, first, a metal paste prepared by kneading high-melting metal powder with an organic solvent and a binder so as to be well mixed is printed by a method such as screen printing on predetermined portions of the ceramic green sheet that will be the upper and lower surfaces of the insulating layer. . After that, the ceramic green sheets on which these metal pastes are printed are stacked and pressure-bonded, and simultaneously fired. Through the above steps, the wiring conductor 20, the ground conductor 21, the internal ground conductor 30, the first internal ground conductor 31, and the second internal ground conductor 32 are formed on the first surface 12 of the insulating base 10 and the inner layer of the insulating base 10. , as well as the third internal ground conductor 33 . At this time, by printing a metal paste on the inner side surfaces and bottom surfaces of the recesses 13 , 14 or the recesses 15 , the metallized layers can also be formed on the inner side surfaces and bottom surfaces of the recesses 13 , 14 or the recesses 15 . In addition, each conductor may be provided with nickel plating or gold plating on its surface.

絶縁基体１０に、配線導体２０、内部接地導体３０等が形成されることによって、配線基体１となる。 The wiring substrate 1 is formed by forming the wiring conductor 20 , the internal ground conductor 30 and the like on the insulating substrate 10 .

また、接地導体２１と内部接地導体３０、または、複数の内部接地導体３０同士を電気的に接続させる貫通導体３４は、例えば、複数の絶縁層となるセラミックグリーンシートに貫通孔を設けておいて、貫通孔内に、各導体を形成するのと同様の金属ペーストを充填し、それぞれのセラミックグリーンシートを積層するとともに圧着し、同時焼成することによって設けることができる。貫通孔は、例えば、金属ピンを用いた機械的な打ち抜き加工、またはレーザ光を用いた加工等の孔あけ加工によって形成することができる。金属ペーストの貫通孔への充填の際には、真空吸引等の手段を併用して金属ペーストの充填を容易なものとしてもよい。 The through conductor 34 that electrically connects the ground conductor 21 and the internal ground conductor 30 or the plurality of internal ground conductors 30 to each other is formed by, for example, providing through holes in a ceramic green sheet serving as a plurality of insulating layers. , the through-holes can be filled with the same metal paste as that used to form each conductor, and the respective ceramic green sheets can be stacked, pressure-bonded, and simultaneously fired. The through-holes can be formed, for example, by mechanical punching using a metal pin or drilling such as processing using laser light. When filling the through-holes with the metal paste, a means such as vacuum suction may be used in combination to facilitate the filling of the metal paste.

＜半導体素子収納用パッケージ１００の構成＞
図２に示す、半導体素子収納用パッケージ１００は、配線基体１と、基板５０と、枠体６０と、を備えている。 <Structure of semiconductor element housing package 100>
A semiconductor element housing package 100 shown in FIG.

基板５０は、載置面５１を有している。基板５０は、平面視において例えば矩形状であってもよい。また、矩形状である場合、平面視における大きさが５ｍｍ×１０ｍｍ～５０ｍｍ×５０ｍｍで、厚みが０．３ｍｍ～２０ｍｍであってもよい。載置面は、例えば基板５０と同じ形状であり、平面視において矩形状であってもよい。また、矩形状である場合、平面視における大きさが５ｍｍ×１０ｍｍ～５０ｍｍ×５０ｍｍであってもよい。基板５０の大きさ、および載置面５１の大きさは、適宜設定することができる。 The substrate 50 has a mounting surface 51 . The substrate 50 may have, for example, a rectangular shape in plan view. In the case of a rectangular shape, the size in plan view may be 5 mm×10 mm to 50 mm×50 mm, and the thickness may be 0.3 mm to 20 mm. The mounting surface has, for example, the same shape as the substrate 50, and may be rectangular in plan view. In addition, in the case of a rectangular shape, the size in plan view may be 5 mm×10 mm to 50 mm×50 mm. The size of the substrate 50 and the size of the mounting surface 51 can be set as appropriate.

基板５０は、例えば、鉄、銅、ニッケル、クロム、コバルト、モリブデンまたはタングステンのような金属、あるいはこれらの金属の合金、例えば、銅－タングステン合金、銅－モリブデン合金、鉄－ニッケル－コバルト合金などを用いることができる。このような金属材料のインゴットに圧延加工法、打ち抜き加工法のような金属加工法を施すことによって、基板５０を構成する金属部材を作製することができる。 The substrate 50 is made of metals such as iron, copper, nickel, chromium, cobalt, molybdenum or tungsten, or alloys of these metals such as copper-tungsten alloys, copper-molybdenum alloys, iron-nickel-cobalt alloys, etc. can be used. By subjecting an ingot of such a metal material to a metal working method such as a rolling method or a punching method, a metal member constituting the substrate 50 can be manufactured.

枠体６０は、載置面５１を囲んで位置している。枠体６０は、載置面５１に向かう平面視において矩形状またはＵ字形状であり、大きさが５ｍｍ×１０ｍｍ～５０ｍｍ×５０ｍｍで、高さが２ｍｍ～１５ｍｍの範囲であってもよい。また、厚みは０．５ｍｍ～２ｍｍであってもよい。枠体６０の大きさは、適宜設定することができる。 The frame body 60 is positioned so as to surround the mounting surface 51 . The frame body 60 may be rectangular or U-shaped in a plan view facing the placement surface 51, and may have a size of 5 mm×10 mm to 50 mm×50 mm and a height of 2 mm to 15 mm. Also, the thickness may be 0.5 mm to 2 mm. The size of the frame 60 can be set appropriately.

枠体６０は、例えば、鉄、銅、ニッケル、クロム、コバルト、モリブデンまたはタングステンのような金属、あるいはこれらの金属の合金、例えば、銅－タングステン合金、銅－モリブデン合金、鉄－ニッケル－コバルト合金などを用いることができる。このような金属材料のインゴットに圧延加工法、打ち抜き加工法のような金属加工法を施すことによって、枠体６０を構成する金属部材を作製することができる。 The frame 60 is made of metals such as iron, copper, nickel, chromium, cobalt, molybdenum or tungsten, or alloys of these metals, such as copper-tungsten alloys, copper-molybdenum alloys, iron-nickel-cobalt alloys. etc. can be used. By subjecting an ingot of such a metal material to a metal working method such as a rolling method or a punching method, the metal member constituting the frame 60 can be produced.

枠体６０の側壁には配線基体１の篏合部６１が位置している。篏合部６１は、載置面５１に沿った方向に枠体６０の内外を貫通している。篏合部６１は、枠体６０が載置面５１に向かう平面視をしたときに矩形状であれば、枠体６０の高さ方向の一部分を切欠いて位置していてもよい。高さ方向の一部分とは例えば、０．５ｍｍ～１０ｍｍ切欠いていてもよい。篏合部６１は、枠体６０が載置面５１に向かう平面視をしたときにＵ字形であれば、枠体６０を形成する部材が存在しない部分を篏合部６１としてもよい。言い換えると、篏合部６１は、載置面５１に向かう平面視をしたときに矩形状であった枠体６０の一辺について、高さ方向の全部分を切欠いて位置する形状であってもよい。 A fitting portion 61 of the wiring substrate 1 is positioned on the side wall of the frame 60 . The fitting portion 61 penetrates the inside and outside of the frame 60 in the direction along the mounting surface 51 . If the frame 60 has a rectangular shape when viewed from above toward the mounting surface 51 , the fitting portion 61 may be positioned by cutting out a portion of the frame 60 in the height direction. The part in the height direction may be a notch of 0.5 mm to 10 mm, for example. If the frame body 60 is U-shaped when viewed from above toward the mounting surface 51 , the fitting part 61 may be a portion where the member forming the frame body 60 does not exist. In other words, the fitting portion 61 may have a shape in which one side of the frame 60, which has a rectangular shape when viewed from above toward the mounting surface 51, is cut out entirely in the height direction. .

篏合部６１には、上記に記載した配線基体１や半導体素子収納用パッケージ１００の内側と外側とを電気的に接続する、酸化アルミニウム質焼結体からなる絶縁端子が挿入固定され、篏合部６１と篏合して位置している。つまり、半導体素子収納用パッケージ１００において、配線基体１は、電気的な入出力端子の役割を果たす。 An insulating terminal made of an aluminum oxide sintered body, which electrically connects the inside and the outside of the wiring base 1 and the semiconductor element housing package 100 described above, is inserted and fixed into the fitting portion 61 . It is positioned to fit with the portion 61 . In other words, in the semiconductor element housing package 100, the wiring substrate 1 serves as an electrical input/output terminal.

＜半導体装置１０００の構成＞
図１０に示す、半導体装置１０００は、半導体素子収納用パッケージ１００と、半導体素子７０と、を備えている。 <Structure of Semiconductor Device 1000>
A semiconductor device 1000 shown in FIG. 10 includes a semiconductor element housing package 100 and a semiconductor element 70 .

半導体素子７０は、例えば、レーザーダイオード（ＬＤ：laser diode）であってもよ
い。また、半導体素子７０は、フォトダイオード（ＰＤ：Photo diode）等であってもよ
い。ＬＤの場合には、枠体６０の側壁に貫通孔６２を設けて光ファイバを取り付けてもよい。 The semiconductor element 70 may be, for example, a laser diode (LD). Also, the semiconductor element 70 may be a photodiode (PD) or the like. In the case of an LD, a through hole 62 may be provided in the side wall of the frame 60 to attach the optical fiber.

また、蓋体８０が、枠体６０の上端に位置し、半導体素子収納用パッケージ１００を覆いっていてもよい。このとき、蓋体６０は、半導体素子収納用パッケージ１００を封止していてもよい。蓋体８０は、平面視において、矩形状であり、大きさが５ｍｍ×１０ｍｍ～５０ｍｍ×５０ｍｍで、厚みが０．５ｍｍ～２ｍｍである。蓋体８０は、例えば、鉄、銅、ニッケル、クロム、コバルト、モリブデンまたはタングステンのような金属、あるいはこれらの金属の合金、例えば、銅－タングステン合金、銅－モリブデン合金、鉄－ニッケル－コバルト合金などを用いることができる。このような金属材料のインゴットに圧延加工法、打ち抜き加工法のような金属加工法を施すことによって、蓋体８０を構成する金属部材を作製することができる。 Also, the lid 80 may be positioned at the upper end of the frame 60 to cover the semiconductor element housing package 100 . At this time, the lid body 60 may seal the semiconductor element housing package 100 . The lid body 80 has a rectangular shape in plan view, a size of 5 mm×10 mm to 50 mm×50 mm, and a thickness of 0.5 mm to 2 mm. The lid 80 is made of metal such as iron, copper, nickel, chromium, cobalt, molybdenum or tungsten, or alloys of these metals, such as copper-tungsten alloy, copper-molybdenum alloy, iron-nickel-cobalt alloy. etc. can be used. By subjecting an ingot of such a metal material to a metal working method such as a rolling method or a punching method, the metal member constituting the lid body 80 can be manufactured.

半導体装置１０００は、半導体素子収納用パッケージ１００の載置面５１に半導体素子７０を搭載し、例えば、ボンディングワイヤなどで半導体素子７０と配線基体１とを電気的に接続することで作成する。 The semiconductor device 1000 is manufactured by mounting the semiconductor element 70 on the mounting surface 51 of the semiconductor element housing package 100 and electrically connecting the semiconductor element 70 and the wiring substrate 1 with, for example, bonding wires.

以上、本発明は上述の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更等が可能である。更に、特許請求の範囲に属する変更等は全て本発明の範囲内のものである。 As described above, the present invention is not limited to the above-described embodiments, and various modifications and the like are possible without departing from the gist of the present invention. Furthermore, all modifications and the like belonging to the claims are within the scope of the present invention.

１：配線基体
１０：絶縁基体
１１：絶縁材
１２：第１面
１３：凹部
１４：凹部
１５：窪み
２０：配線導体
２１：接地導体
２１１：第１領域
２１２：第２領域
３０：内部接地導体
３１：第１内部接地導体
３２：第２内部接地導体
３２３：第１部
３３：第３内部接地導体
３３３：第２部
３４：貫通導体
４０：リード端子
４１：接続部
４２：傾斜部
５０：基板
５１：載置面
６０：枠体
６１：篏合部
６２：貫通孔
７０：半導体素子
８０：蓋体
１００：半導体素子収納用パッケージ
１０００：半導体装置
1: wiring base 10: insulating base 11: insulating material 12: first surface 13: recess 14: recess 15: recess 20: wiring conductor 21: ground conductor 211: first region 212: second region 30: internal ground conductor 31 : First internal ground conductor 32 : Second internal ground conductor 323 : First part 33 : Third internal ground conductor 333 : Second part 34 : Through conductor 40 : Lead terminal 41 : Connection part 42 : Inclined part 50 : Substrate 51 : mounting surface 60: frame 61: fitting portion 62: through hole 70: semiconductor element 80: lid 100: package for storing semiconductor element 1000: semiconductor device

Claims (10)

第１面を有するとともに絶縁材を含む絶縁基体と、
前記第１面上に位置する配線導体と、
前記配線導体に接続され、第１方向に沿って延びたリード端子と、
前記絶縁基体の内部に位置する内部接地導体と、を有し、
前記内部接地導体は、
前記第１面に沿って延びており、かつ、前記第１面に直交する第２方向における前記第１面からの距離Ｄ１を有する第１内部接地導体と、
前記第１面に沿って延びており、かつ、前記第２方向における前記第１面からの距離Ｄ２が前記距離Ｄ１よりも大きい第２内部接地導体と、を有し、
前記第２内部接地導体は、
前記第１面に直交するとともに前記第１方向を含む断面視をした場合、
前記第２方向において、前記第２内部接地導体と前記配線導体とは前記絶縁基体の前記絶縁材を介して対向して位置するとともに、前記リード端子と重なる第１部を有する、配線基体。 an insulating substrate having a first surface and including an insulating material;
a wiring conductor positioned on the first surface;
a lead terminal connected to the wiring conductor and extending along a first direction;
an internal ground conductor located inside the insulating base,
The internal ground conductor is
a first internal ground conductor extending along the first surface and having a distance D1 from the first surface in a second direction orthogonal to the first surface;
a second internal ground conductor extending along the first surface and having a distance D2 from the first surface in the second direction greater than the distance D1;
The second internal ground conductor is
When viewed in a cross section orthogonal to the first plane and including the first direction,
A wiring substrate, wherein the second internal ground conductor and the wiring conductor are positioned to face each other in the second direction with the insulating material of the insulating substrate interposed therebetween, and have a first portion that overlaps the lead terminal. 前記第１方向に沿う方向における前記第１部の長さＬ１は、０より大きく、前記配線導体が伝送する信号の周波数における実効波長の１／４以下である、請求項１記載の配線基体。 2. The wiring substrate according to claim 1, wherein a length L1 of said first portion in a direction along said first direction is greater than 0 and equal to or less than 1/4 of an effective wavelength at a frequency of a signal transmitted by said wiring conductor. 前記距離Ｄ２は、０より大きく、前記配線導体が伝送する信号の周波数における実効波長以下である、請求項１または請求項２記載の配線基体。 3. The wiring substrate according to claim 1, wherein said distance D2 is greater than 0 and equal to or less than an effective wavelength at a frequency of a signal transmitted by said wiring conductor. 前記第２方向における前記第１内部接地導体から前記第２内部接地導体までの距離Ｄ３は、前記配線導体が伝送する信号の周波数における実効波長の１／４以下である、請求項１～請求項３のいずれか一つに記載の配線基体。 1. A distance D3 from said first internal ground conductor to said second internal ground conductor in said second direction is 1/4 or less of an effective wavelength at a frequency of a signal transmitted by said wiring conductor. 4. The wiring substrate according to any one of 3. 前記内部接地導体は、
前記第１面に平行に延びており、かつ、前記第２方向における前記第１面からの距離Ｄ４が前記距離Ｄ２よりも大きい第３内部接地導体を更に有し、
前記第３内部接地導体は、
前記第１面に直交するとともに前記第１方向を含む断面視をした場合、
前記第２方向において、前記第３内部接地導体と前記配線導体とは前記絶縁基体の前記絶縁材を介して対向して位置するとともに前記リード端子と重なる第２部を有する、請求項１～請求項４のいずれか一つに記載の配線基体。 The internal ground conductor is
further comprising a third internal ground conductor extending parallel to the first surface and having a distance D4 from the first surface in the second direction greater than the distance D2;
The third internal ground conductor is
When viewed in a cross section orthogonal to the first plane and including the first direction,
In the second direction, the third internal ground conductor and the wiring conductor are positioned facing each other with the insulating material of the insulating base interposed therebetween and have a second portion overlapping the lead terminal. Item 5. The wiring substrate according to any one of items 4. 前記第１方向に沿う方向における前記第２部の長さＬ２は、０より大きく、前記配線導体が伝送する信号の周波数における実効波長の１／４以下である、請求項５記載の配線基体。 6. The wiring substrate according to claim 5, wherein a length L2 of said second portion in a direction along said first direction is greater than 0 and equal to or less than 1/4 of an effective wavelength at a frequency of a signal transmitted by said wiring conductor. 前記距離Ｄ４は、０より大きく、前記配線導体が伝送する信号の周波数における実効波長以下である、請求項５または請求項６記載の配線基体。 7. The wiring substrate according to claim 5, wherein said distance D4 is greater than 0 and equal to or less than the effective wavelength at the frequency of the signal transmitted by said wiring conductor. 前記第２方向における前記第２内部接地導体から前記第３内部接地導体までの距離Ｄ５は、前記配線導体が伝送する信号の周波数における実効波長の１／４以下である、請求項５～請求項７のいずれか一つに記載の配線基体。 5. The distance D5 from the second internal ground conductor to the third internal ground conductor in the second direction is 1/4 or less of the effective wavelength at the frequency of the signal transmitted by the wiring conductor. 8. The wiring substrate according to any one of 7. 請求項１～請求項８のいずれか一つに記載の配線基体と、
載置面を有する基板と、
前記載置面を囲んで位置する枠体と、を備え、
前記枠体は、前記載置面に沿った方向に内外を貫通した篏合部を有しており、
前記配線基体は、前記篏合部と篏合して位置する半導体素子収納用パッケージ。 The wiring substrate according to any one of claims 1 to 8,
a substrate having a mounting surface;
a frame positioned surrounding the mounting surface,
The frame body has a fitting portion penetrating inside and outside in a direction along the mounting surface,
The wiring substrate is a package for housing a semiconductor element, which is positioned so as to be fitted with the fitting portion. 請求項９記載の半導体素子収納用パッケージと、
前記載置面に位置し、前記配線導体と接続された半導体素子と、を備える半導体装置。
A package for housing a semiconductor element according to claim 9;
and a semiconductor element positioned on the mounting surface and connected to the wiring conductor.
JP2019209737A 2019-11-20 2019-11-20 Wiring substrate, package for storing semiconductor element, and semiconductor device Active JP7254011B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019209737A JP7254011B2 (en) 2019-11-20 2019-11-20 Wiring substrate, package for storing semiconductor element, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019209737A JP7254011B2 (en) 2019-11-20 2019-11-20 Wiring substrate, package for storing semiconductor element, and semiconductor device

Publications (2)

Publication Number Publication Date
JP2021082731A JP2021082731A (en) 2021-05-27
JP7254011B2 true JP7254011B2 (en) 2023-04-07

Family

ID=75965946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019209737A Active JP7254011B2 (en) 2019-11-20 2019-11-20 Wiring substrate, package for storing semiconductor element, and semiconductor device

Country Status (1)

Country Link
JP (1) JP7254011B2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030133279A1 (en) 2002-01-07 2003-07-17 Kyocera Corporation High-frequency wiring board
JP2004006608A (en) 2002-03-28 2004-01-08 Kyocera Corp Laminate structure for high frequency signal transmission, and high frequency signal semiconductor package using the same
US20050098348A1 (en) 2002-06-27 2005-05-12 Kyocera Corporation High-frequency signal transmitting device
JP2006074014A (en) 2004-08-06 2006-03-16 Toyota Industries Corp Multilayer printed board, and method for controlling impedance of microstrip line
JP2019114689A (en) 2017-12-25 2019-07-11 京セラ株式会社 High frequency substrate, high frequency package, and high frequency module

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030133279A1 (en) 2002-01-07 2003-07-17 Kyocera Corporation High-frequency wiring board
JP2003204209A (en) 2002-01-07 2003-07-18 Kyocera Corp Wiring board for high frequency
JP2004006608A (en) 2002-03-28 2004-01-08 Kyocera Corp Laminate structure for high frequency signal transmission, and high frequency signal semiconductor package using the same
US20050098348A1 (en) 2002-06-27 2005-05-12 Kyocera Corporation High-frequency signal transmitting device
JP2006074014A (en) 2004-08-06 2006-03-16 Toyota Industries Corp Multilayer printed board, and method for controlling impedance of microstrip line
JP2019114689A (en) 2017-12-25 2019-07-11 京セラ株式会社 High frequency substrate, high frequency package, and high frequency module

Also Published As

Publication number Publication date
JP2021082731A (en) 2021-05-27

Similar Documents

Publication Publication Date Title
EP2237316B1 (en) Connection terminal, package using the same and electronic device
JP7197647B2 (en) High frequency substrates, high frequency packages and high frequency modules
JP7025504B2 (en) High frequency substrate, high frequency package and high frequency module
JP6243510B2 (en) Electronic component storage package and electronic device
JP5926290B2 (en) Input / output member and electronic component storage package and electronic device
JPWO2017131092A1 (en) Wiring substrate, optical semiconductor element package, and optical semiconductor device
JP7021041B2 (en) Wiring boards, electronic component packages and electronic devices
JP2018200949A (en) Wiring board, package for accommodating electronic components, and electronic device
JP4874177B2 (en) Connection terminal, package using the same, and electronic device
JP7350902B2 (en) Insulating substrates, semiconductor packages and semiconductor devices
JP7254011B2 (en) Wiring substrate, package for storing semiconductor element, and semiconductor device
EP3937223A1 (en) Wiring board, package for electronic component, and electronic device
JP7230251B2 (en) Wiring boards, electronic component packages and electronic devices
JP7206418B2 (en) Wiring substrate, package for storing semiconductor element, and semiconductor device
JP5709427B2 (en) Device storage package and semiconductor device including the same
JP7244630B2 (en) Wiring substrates, packages for electronic components, and electronic devices
WO2023145651A1 (en) Wiring board, electronic component mounting package using wiring board, and electronic module
WO2023120586A1 (en) Wiring board, electronic component mounting package using wiring board, and electronic module
JP2021120985A (en) Wiring base and electronic apparatus

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20210827

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20210827

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220511

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230228

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230228

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230328

R150 Certificate of patent or registration of utility model

Ref document number: 7254011

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150