JP6795653B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP6795653B2 JP6795653B2 JP2019087643A JP2019087643A JP6795653B2 JP 6795653 B2 JP6795653 B2 JP 6795653B2 JP 2019087643 A JP2019087643 A JP 2019087643A JP 2019087643 A JP2019087643 A JP 2019087643A JP 6795653 B2 JP6795653 B2 JP 6795653B2
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- electrode
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- solar cell
- passivation film
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- 238000004519 manufacturing process Methods 0.000 title claims description 74
- 239000004065 semiconductor Substances 0.000 claims description 641
- 239000000758 substrate Substances 0.000 claims description 264
- 238000002161 passivation Methods 0.000 claims description 172
- 238000000034 method Methods 0.000 claims description 91
- 229910052751 metal Inorganic materials 0.000 claims description 83
- 239000002184 metal Substances 0.000 claims description 83
- 239000013078 crystal Substances 0.000 claims description 82
- 238000010438 heat treatment Methods 0.000 claims description 55
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- 239000012535 impurity Substances 0.000 claims description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000010304 firing Methods 0.000 claims description 11
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
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- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- 229910004012 SiCx Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
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- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
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- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
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- 230000000087 stabilizing effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- 238000005406 washing Methods 0.000 description 1
Classifications
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
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- H01L31/0216—Coatings
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
- H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
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- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
- H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Description
〔先行技術文献〕
〔特許文献〕
〔特許文献1〕米国特許出願公開第2011/275175号明細書
〔特許文献2〕米国特許出願公開第2014/073105号明細書
Claims (29)
- シリコン基板の後面上にトンネル層を形成する段階と、
前記トンネル層の上に第1導電型の不純物がドーピングされた第1導電型の多結晶シリコン層を形成する段階と、
前記シリコン基板の前面に第2導電型の不純物をドーピングして第2導電型の半導体部を形成する段階と、
前記多結晶シリコン層の上に第1パッシベーション膜を形成する段階と、
前記第1パッシベーション膜の開口部を介して前記多結晶シリコン層に接触する第1電極を形成する段階とを含み、
前記第1電極を形成する段階は、前記第1パッシベーション膜の上に第1電極用ペーストを印刷する印刷工程の後に熱処理する熱処理工程を行い、前記第1電極用ペーストが前記第1パッシベーション膜を貫通して前記多結晶シリコン層に接触するようにし、
前記熱処理工程によって前記第1電極用ペーストが前記第1パッシベーション膜を貫通して前記多結晶シリコン層で再結晶化されて金属結晶を形成する、太陽電池の製造方法。 - 前記半導体部の上に第2パッシベーション膜を形成する段階とをさらに含む、請求項1に記載の太陽電池の製造方法。
- 前記半導体部は、前記シリコン基板の前面に前記第2導電型の不純物を拡散させて形成する、請求項1に記載の太陽電池の製造方法。
- 前記多結晶シリコン層は、前記シリコン基板の結晶構造と異なる、請求項1に記載の太陽電池の製造方法。
- 前記半導体部に接触する第2電極を形成する段階を含む、請求項1に記載の太陽電池の製造方法。
- 前記第1電極を形成する段階において熱処理の最高温度は795℃〜870℃の間である、請求項1に記載の太陽電池の製造方法。
- 前記第1電極を形成する段階においては複数の第1フィンガー電極パターンと、第1バス電極パターンを印刷する、請求項1に記載の太陽電池の製造方法。
- 前記第1フィンガー電極パターンと前記第1バス電極パターンのそれぞれに含まれる材質は、互いに同一である、請求項7に記載の太陽電池の製造方法。
- 前記第1電極を形成する段階においては、前記第1フィンガー電極パターンと前記第1バス電極パターンは、別の印刷工程でパターニングされる、請求項7に記載の太陽電池の製造方法。
- 前記第1フィンガー電極パターンに含まれる材質と前記第1バス電極パターンに含まれる材質は、互いに異なる、請求項7に記載の太陽電池の製造方法。
- 前記第1フィンガー電極パターンと前記第1バス電極パターンのガラスフリットの含有量が互いに異なる、請求項10に記載の太陽電池の製造方法。
- 前記第1電極を形成する段階が、レーザー焼成コンタクトに実行される、請求項1に記載の太陽電池の製造方法。
- 前記第1電極を形成する段階は、前記第1パッシベーション膜の上に第1電極用ペーストを印刷した後、熱処理して、前記第1電極用ペーストが前記第1パッシベーション膜を貫通して前記多結晶シリコン層に接触するようにする、請求項12に記載の太陽電池の製造方法。
- 前記印刷工程で複数の第1フィンガー電極パターンと、第1バス電極パターンを印刷し、
前記熱処理工程によって前記第1フィンガー電極パターンと、前記第1バス電極パターンが、前記第1パッシベーション膜を貫通して前記多結晶シリコン層で再結晶化されて金属結晶を形成する、請求項1に記載の太陽電池の製造方法。 - 前記印刷工程において複数の第1フィンガー電極パターンと、第1バス電極パターンを印刷し、
前記第1フィンガー電極パターンは、前記第1パッシベーション膜を貫通して前記多結晶シリコン層で再結晶化されて金属結晶を形成し、前記第1バス電極パターンは、前記第1パッシベーション膜を貫通しない、請求項1に記載の太陽電池の製造方法。 - 前記トンネル層は、誘電体材質で形成される、請求項1に記載の太陽電池の製造方法。
- 前記トンネル層は、シリコン酸化物で形成される、請求項16に記載の太陽電池の製造方法。
- 前記トンネル層はSiNx、水素化されたSiNx、AlOx、SiONまたは水素化されたSiONの内、いずれか1つで形成される、請求項16に記載の太陽電池の製造方法。
- 前記トンネル層を形成する段階において、前記トンネル層が前記シリコン基板の前面及び側面にさらに形成され、
前記多結晶シリコン層を形成する段階において、前記多結晶シリコン層が、前記シリコン基板の前面及び側面にさらに形成され、
前記多結晶シリコン層を形成する段階と、前記半導体部を形成する段階との間に、前記シリコン基板の前面及び側面に形成された前記トンネル層及び前記多結晶シリコン層を除去し、前記シリコン基板の後面の縁に位置した、前記トンネル層及び前記多結晶シリコン層を除去する段階と、を含み、
前記除去する段階において、前記シリコン基板の後面の縁に位置した前記トンネル層及び前記多結晶シリコン層が除去されてアイソレーション部を形成し、
前記第1パッシベーション膜は前記アイソレーション部を含み前記シリコン基板の後面の上を全体的に覆う、請求項1に記載の太陽電池の製造方法。 - 前記除去する段階は、
前記シリコン基板の後面から前記多結晶シリコン層の上に前記シリコン基板より小さい面積を有するマスク層を形成する段階と、
前記マスク層が形成されない部分である前記シリコン基板の後面の縁に位置した前記多結晶シリコン層及び前記トンネル層をエッチングする段階と、
前記マスク層を除去する段階とを含む、請求項19に記載の太陽電池の製造方法。 - 前記シリコン基板の側面上に第2パッシベーション膜が位置し、前記第2パッシベーション膜の上に前記第1パッシベーション膜が位置する、請求項1に記載の太陽電池の製造方法。
- 前記多結晶シリコン層を形成する段階は、前記トンネル層の上に真性半導体層を蒸着し、前記真性半導体層に前記第1導電型の不純物を拡散させる、請求項1に記載の太陽電池の製造方法。
- N型シリコン基板の後面上にトンネル層を形成する段階と、
前記N型シリコン基板上に形成された前記トンネル層の上に第1導電型不純物を有する第1導電型の多結晶シリコン層を形成する段階と、
前記N型シリコン基板の前面に第2導電型不純物を拡散して第2導電型の半導体部を形成する段階と、
前記多結晶シリコン層の上に第1パッシベーション膜を形成する段階と、
前記半導体部の上に第2パッシベーション膜を形成する段階と、
前記第1パッシベーション膜の開口部を介して、前記多結晶シリコン層に接続される後面電極を形成する段階と、
前記第2パッシベーション膜の開口部を介して前記半導体部に接続される前面電極を形成する段階とを含み、
前記後面電極を形成する段階は、前記第1パッシベーション膜の上に後面電極用のペーストを印刷する印刷工程の後に熱処理する熱処理工程を実行して、前記後面電極用のペーストが前記第1パッシベーション膜を貫通して前記多結晶シリコン層に接触するようにし、
前記熱処理工程によって、前記後面電極用のペーストが前記第1パッシベーション膜を貫通して前記多結晶シリコン層で再結晶化されて金属結晶を形成する、太陽電池の製造方法。 - 前記後面電極を形成する段階は、前記第1パッシベーション膜の上に後面電極用のペーストを印刷した後、熱処理して、前記後面電極用のペーストが前記第1パッシベーション膜を貫通して前記多結晶シリコン層に接触するようにする、請求項23に記載の太陽電池の製造方法。
- 前記後面電極を形成する段階は、
前記第1パッシベーション膜に開口部を形成する段階と、
前記開口部を介して、前記多結晶シリコン層に接触するように、前記後面電極を形成する段階とを含む、請求項23に記載の太陽電池の製造方法。 - 前記第1パッシベーション膜の上に、第1反射防止膜を形成する段階をさらに含む、請求項23に記載の太陽電池の製造方法。
- 前記第2パッシベーション膜の上に第2反射防止膜を形成する段階をさらに含む、請求項23に記載の太陽電池の製造方法。
- 前記第1導電型はn型であり、前記第2導電型はp型である、請求項23に記載の太陽電池の製造方法。
- 前記第1導電型はp型であり、前記第2導電型はn型である、請求項23に記載の太陽電池の製造方法。
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US11239379B2 (en) | 2022-02-01 |
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