JP6775880B2 - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP6775880B2 JP6775880B2 JP2016183870A JP2016183870A JP6775880B2 JP 6775880 B2 JP6775880 B2 JP 6775880B2 JP 2016183870 A JP2016183870 A JP 2016183870A JP 2016183870 A JP2016183870 A JP 2016183870A JP 6775880 B2 JP6775880 B2 JP 6775880B2
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- 238000003672 processing method Methods 0.000 title claims description 20
- 238000012545 processing Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 134
- 239000010410 layer Substances 0.000 description 117
- 230000001681 protective effect Effects 0.000 description 45
- 238000010438 heat treatment Methods 0.000 description 35
- 230000006378 damage Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 17
- 239000003292 glue Substances 0.000 description 13
- 238000003754 machining Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 3
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0093—Working by laser beam, e.g. welding, cutting or boring combined with mechanical machining or metal-working covered by other subclasses than B23K
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element
- H01L21/786—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being other than a semiconductor body, e.g. insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
Description
1a 表面
1b 裏面
1c 第1の方向
1d 第2の方向
3 ストリート
3a 第1のストリート
3b 第2のストリート
5 デバイス
7 表面保護テープ
9 改質層
9a 第1の改質層
9b 第2の改質層
2 チャックテーブル
2a 枠体
4 保持部
6 吸引源
8 吸引路
10 加熱ユニット
10a 枠体
12 発熱体
14 プレート
16 断熱材
18 ローラー
20 レーザ加工装置
22 チャックテーブル
22a 保持面
24 加工ヘッド
26 研削装置
28 スピンドル
30 研削ホイール
32 研削砥石
34 チャックテーブル
34a 保持面
Claims (2)
- 交差する複数のストリートで区画された各領域にそれぞれデバイスが形成された表面を有するウェーハの加工方法であって、
ウェーハの該表面に表面保護テープを貼着する表面保護テープ貼着ステップと、
該表面保護テープ貼着ステップを実施した後、ウェーハに対して透過性を有する波長のレーザビームを該ストリートに沿ってウェーハの裏面側から照射してウェーハの内部に改質層を形成する改質層形成ステップと、
該改質層形成ステップを実施した後、ウェーハを該裏面側から研削して薄化する研削ステップと、を備え、
該表面保護テープ貼着ステップでは、該表面保護テープを加熱しながら貼着し、
該改質層形成ステップまたは研削ステップでは、該改質層から該ウェーハの表面に至るクラックを形成し、
該研削ステップにおいては、該クラックを境界としてウェーハを分割して個々のチップを形成し、
該複数のストリートは、第1の方向に連続して伸長する第1のストリートと、該第1の方向と交差する第2の方向に伸長する第2のストリートと、を含み、
該改質層形成ステップで形成される該改質層は、該第1のストリートに沿った第1の改質層と、該第2のストリートに沿った第2の改質層と、を含み、
該第1の改質層は、該第2のストリートを境に一方側の第1の部分と、他方側の第2の部分と、を有し、
該改質層形成ステップでは、該第1のストリートにおいて該第1の改質層の該第1の部分と、該第1の改質層の該第2の部分と、は互いに該第2の方向にずれて形成されることを特徴とするウェーハの加工方法。 - 該第1の改質層の該第1の部分と、該第1の改質層の該第2の部分と、は、該第2の改質層と隣接しており、
該改質層形成ステップでは、該第1の改質層の該第1の部分と、該第1の改質層の該第2の部分と、は、該第2の改質層から離間するように形成されることを特徴とする、請求項1に記載のウェーハの加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016183870A JP6775880B2 (ja) | 2016-09-21 | 2016-09-21 | ウェーハの加工方法 |
TW106127543A TWI730158B (zh) | 2016-09-21 | 2017-08-15 | 晶圓的加工方法 |
CN201710821076.4A CN107863293B (zh) | 2016-09-21 | 2017-09-13 | 晶片的加工方法 |
KR1020170117835A KR102294251B1 (ko) | 2016-09-21 | 2017-09-14 | 웨이퍼의 가공 방법 |
US15/710,557 US10297501B2 (en) | 2016-09-21 | 2017-09-20 | Method for dividing wafer into individual chips |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016183870A JP6775880B2 (ja) | 2016-09-21 | 2016-09-21 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018049904A JP2018049904A (ja) | 2018-03-29 |
JP6775880B2 true JP6775880B2 (ja) | 2020-10-28 |
Family
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Family Applications (1)
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JP2016183870A Active JP6775880B2 (ja) | 2016-09-21 | 2016-09-21 | ウェーハの加工方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10297501B2 (ja) |
JP (1) | JP6775880B2 (ja) |
KR (1) | KR102294251B1 (ja) |
CN (1) | CN107863293B (ja) |
TW (1) | TWI730158B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6821245B2 (ja) * | 2016-10-11 | 2021-01-27 | 株式会社ディスコ | ウェーハの加工方法 |
GB2557907B (en) * | 2016-11-17 | 2021-12-22 | Univ Bath | Apparatus, method and system relating to aircraft systems |
JP6925717B2 (ja) * | 2017-06-05 | 2021-08-25 | 株式会社ディスコ | チップの製造方法 |
JP7285067B2 (ja) | 2018-10-30 | 2023-06-01 | 浜松ホトニクス株式会社 | レーザ加工装置及びレーザ加工方法 |
WO2020090894A1 (ja) | 2018-10-30 | 2020-05-07 | 浜松ホトニクス株式会社 | レーザ加工装置及びレーザ加工方法 |
KR20210081403A (ko) * | 2018-10-30 | 2021-07-01 | 하마마츠 포토닉스 가부시키가이샤 | 레이저 가공 장치 및 레이저 가공 방법 |
CN109599354A (zh) * | 2018-12-07 | 2019-04-09 | 广东工业大学 | 一种Micro-LED巨量转移的结构及方法 |
KR20210142584A (ko) * | 2019-03-26 | 2021-11-25 | 린텍 가부시키가이샤 | 반도체 장치의 제조 방법 및 적층체 |
JP7378894B2 (ja) * | 2019-11-06 | 2023-11-14 | 株式会社ディスコ | 加工装置 |
JP2022064089A (ja) * | 2020-10-13 | 2022-04-25 | 株式会社ディスコ | ウェーハの加工方法、及び、加工装置 |
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2016
- 2016-09-21 JP JP2016183870A patent/JP6775880B2/ja active Active
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2017
- 2017-08-15 TW TW106127543A patent/TWI730158B/zh active
- 2017-09-13 CN CN201710821076.4A patent/CN107863293B/zh active Active
- 2017-09-14 KR KR1020170117835A patent/KR102294251B1/ko active IP Right Grant
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US20180082897A1 (en) | 2018-03-22 |
TW201824377A (zh) | 2018-07-01 |
JP2018049904A (ja) | 2018-03-29 |
CN107863293A (zh) | 2018-03-30 |
US10297501B2 (en) | 2019-05-21 |
TWI730158B (zh) | 2021-06-11 |
CN107863293B (zh) | 2023-03-28 |
KR102294251B1 (ko) | 2021-08-25 |
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