JP6759279B2 - Vacuum drying device and vacuum drying method - Google Patents

Vacuum drying device and vacuum drying method Download PDF

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JP6759279B2
JP6759279B2 JP2018104841A JP2018104841A JP6759279B2 JP 6759279 B2 JP6759279 B2 JP 6759279B2 JP 2018104841 A JP2018104841 A JP 2018104841A JP 2018104841 A JP2018104841 A JP 2018104841A JP 6759279 B2 JP6759279 B2 JP 6759279B2
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substrate
exhaust port
drying device
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JP2019211109A (en
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富藤　幸雄
幸雄 富藤
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Screen Holdings Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0406—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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Description

この発明は、減圧乾燥装置および減圧乾燥方法に関し、特に、基板上に塗布された処理液を乾燥させる技術に関する。処理対象となる基板には、例えば、半導体基板、液晶表示装置および有機ＥＬ(Electroluminescence)表示装置などのＦＰＤ(Flat Panel Display)用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板、太陽電池用基板、プリント基板などが含まれる。 The present invention relates to a vacuum drying apparatus and a vacuum drying method, and more particularly to a technique for drying a treatment liquid applied on a substrate. The substrates to be processed include, for example, FPD (Flat Panel Display) substrates such as semiconductor substrates, liquid crystal display devices and organic EL (Electroluminescence) display devices, optical disk substrates, magnetic disk substrates, and optomagnetic disk substrates. Includes photomask substrates, ceramic substrates, solar cell substrates, printed circuit boards, and the like.

従来、基板処理装置（例えば、液晶パネル製造装置など）では、その表面に処理液が塗布された基板に対して、減圧乾燥処理を施す減圧乾燥装置が知られている。例えば、フォトリソグラフィー工程においては、ガラス基板等の被処理基板上に塗布したレジスト液の塗布膜をプリベーキングに先立って適度に乾燥させるために減圧乾燥装置が用いられる場合がある。 Conventionally, in a substrate processing apparatus (for example, a liquid crystal panel manufacturing apparatus), a vacuum drying apparatus is known in which a substrate on which a processing liquid is coated is subjected to a vacuum drying treatment. For example, in the photolithography step, a vacuum drying device may be used to appropriately dry the coating film of the resist liquid applied on the substrate to be treated such as a glass substrate prior to prebaking.

従来の代表的な減圧乾燥装置は、たとえば特許文献１に記載されるように、開閉可能なチャンバの中の適宜の高さに配設された基板支持部材上に基板を水平に載置してから、チャンバを閉じて減圧乾燥処理を行う（例えば、特許文献１，２参照）。 In a conventional typical vacuum drying device, for example, as described in Patent Document 1, a substrate is horizontally placed on a substrate support member arranged at an appropriate height in an openable / closable chamber. Then, the chamber is closed and the vacuum drying process is performed (see, for example, Patent Documents 1 and 2).

この種の減圧乾燥処理では、まず、チャンバ内に設けられた排気口を通じて外の真空ポンプによりチャンバ内の真空排気を行う。この真空排気により、チャンバ内の圧力がそれまでの大気圧状態から減圧状態に変わり、この減圧状態の下で基板上のレジスト塗布膜から溶剤成分が蒸発する。チャンバ内の圧力が一定圧力まで減圧された時点で、チャンバ内の減圧を終了させ、その後、チャンバ内に設けられた供給口より不活性ガス（たとえば窒素ガス）あるいはエアを噴出または拡散放出して、チャンバ内の圧力を大気圧に戻す（復圧させる）。チャンバ内が復圧したら、チャンバが開けられて、チャンバ内から基板が搬出される。 In this type of vacuum drying process, first, the inside of the chamber is evacuated by an outside vacuum pump through an exhaust port provided in the chamber. Due to this vacuum exhaust, the pressure in the chamber changes from the atmospheric pressure state to the reduced pressure state, and the solvent component evaporates from the resist coating film on the substrate under this reduced pressure state. When the pressure in the chamber is reduced to a constant pressure, the decompression in the chamber is terminated, and then an inert gas (for example, nitrogen gas) or air is ejected or diffused and discharged from the supply port provided in the chamber. , Return the pressure in the chamber to atmospheric pressure (recover). When the pressure inside the chamber is restored, the chamber is opened and the substrate is carried out from the chamber.

チャンバにおいて真空排気を行った場合、一般的には、排気口に近いほど雰囲気の流速が大きくなる。流速が大きい場合、基板上の処理液の表面状態が荒れるおそれがあり、乾燥むらが発生する可能性がある。特許文献１では、チャンバの底部に設けられた排気口の上方に中板が設けられている。排気口が中板で覆われていることによって、中板とチャンバの底部との間を経由して排気口に至る排気経路を形成している。また、特許文献２においても、底部に設けられた排気口の上方に整流板を配することが記載されている。 When vacuum exhaust is performed in the chamber, the flow velocity of the atmosphere generally increases as it is closer to the exhaust port. If the flow velocity is high, the surface condition of the treatment liquid on the substrate may be rough, and uneven drying may occur. In Patent Document 1, a middle plate is provided above the exhaust port provided at the bottom of the chamber. By covering the exhaust port with the middle plate, an exhaust path is formed from the middle plate to the bottom of the chamber to the exhaust port. Further, Patent Document 2 also describes that a straightening vane is arranged above an exhaust port provided at the bottom.

特開平９−３２０９４９号公報Japanese Unexamined Patent Publication No. 9-320949 特開２００４−４７５８２号公報Japanese Unexamined Patent Publication No. 2004-47582

上記従来技術では、中板の周端部とチャンバの側壁との隙間から雰囲気が吸い込まれるため、この隙間に近い領域で雰囲気の流速が大きくなってしまう。このため、この隙間周辺に基板が配置されることによって、基板上の処理液について乾燥むらが発生する可能性があり、改善の余地があった。 In the above-mentioned conventional technique, since the atmosphere is sucked from the gap between the peripheral end of the middle plate and the side wall of the chamber, the flow velocity of the atmosphere increases in the region close to this gap. Therefore, by arranging the substrate around this gap, there is a possibility that uneven drying may occur in the processing liquid on the substrate, and there is room for improvement.

本発明は、基板上の処理液を減圧で乾燥させる際に、乾燥むらの発生を軽減する技術を提供することを目的とする。 An object of the present invention is to provide a technique for reducing the occurrence of uneven drying when the treatment liquid on the substrate is dried under reduced pressure.

上記課題を解決するため、第１態様は、第１主面および第２主面を有し前記第１主面に処理液を有する基板を、減圧によって乾燥させる減圧乾燥装置であって、前記基板を収容可能な収容空間を有するとともに前記収容空間に面する第１面を有する筐体と、第１面に設けられている凹部と、前記凹部の深さ方向の底面に設けられている排気口と、前記排気口から前記収容空間の雰囲気を吸引する吸引機構と、前記収容空間における、前記排気口と前記深さ方向に重なる位置に配される第１部材と、前記収容空間における、前記第１部材の端部および前記凹部の内縁部と前記深さ方向に間隔をおいて重なる位置に配される第２部材と、前記収容空間における、前記第１部材および前記第２部材に対して前記排気口とは反対側の位置に前記基板を保持する基板保持部とを備える。 In order to solve the above problems, the first aspect is a vacuum drying apparatus for drying a substrate having a first main surface and a second main surface and having a treatment liquid on the first main surface by reduced pressure. A housing having a storage space capable of accommodating the space and having a first surface facing the accommodation space, a recess provided on the first surface, and an exhaust port provided on the bottom surface of the recess in the depth direction. A suction mechanism for sucking the atmosphere of the accommodation space from the exhaust port, a first member arranged at a position overlapping the exhaust port in the depth direction in the accommodation space, and the first member in the accommodation space. The second member arranged at a position where the end of one member and the inner edge of the recess are overlapped with each other at intervals in the depth direction, and the first member and the second member in the accommodation space. A substrate holding portion for holding the substrate is provided at a position opposite to the exhaust port.

第２態様は、第１態様の減圧乾燥装置であって、前記基板保持部は、前記基板の前記第２主面を支持する複数のピンを含む。 The second aspect is the vacuum drying apparatus of the first aspect, in which the substrate holding portion includes a plurality of pins that support the second main surface of the substrate.

第３態様は、第２態様の減圧乾燥装置であって、前記複数のピンは、第１方向に配される複数の第１ピンと、前記複数の第１ピンから前記第１方向に直交する第２方向に間隔をあけて前記第１方向に配される複数の第２ピンと、を含み、前記第２部材は、前記複数の第１ピンと前記複数の第２ピンとの間に配されている。 The third aspect is the vacuum drying apparatus of the second aspect, wherein the plurality of pins are orthogonal to the plurality of first pins arranged in the first direction and the plurality of first pins in the first direction. A plurality of second pins arranged in the first direction at intervals in two directions are included, and the second member is arranged between the plurality of first pins and the plurality of second pins.

第４態様は、第２態様または第３態様の減圧乾燥装置であって、前記複数のピンを前記深さ方向に移動させることによって、前記基板を第１基板位置と、前記第１基板位置よりも前記排気口に近い第２基板位置との間で移動させる移動駆動部、をさらに備える。 The fourth aspect is a reduced pressure drying apparatus of the second aspect or the third aspect, by moving the plurality of pins in the depth direction, the substrate and the first substrate position, the first substrate position It further includes a moving drive unit that moves the second substrate closer to the exhaust port.

第５態様は、第４態様の減圧乾燥装置であって、前記移動駆動部は、前記吸引機構が前記排気口を介して雰囲気の吸引を開始した後、前記基板を前記第１基板位置から前記第２基板位置に移動させる。 The fifth aspect is a reduced pressure drying apparatus of the fourth aspect, the pre-SL movement driving unit, after which the suction mechanism starts suction of atmosphere through the exhaust port, the first substrate position the substrate To the position of the second substrate.

第６態様は、第１態様から第５態様のいずれか１つの減圧乾燥装置であって、前記第１部材が前記第２部材と前記排気口との間に設けられている。 A sixth aspect is a vacuum drying device according to any one of the first to fifth aspects, wherein the first member is provided between the second member and the exhaust port.

第７態様は、第６態様の減圧乾燥装置であって、前記第１部材の少なくとも一部が、前記凹部内にある。 A seventh aspect is the vacuum drying device of the sixth aspect, in which at least a part of the first member is in the recess.

第８態様は、第７態様の減圧乾燥装置であって、前記第１部材の全部が、前記凹部内にある。 The eighth aspect is the vacuum drying device of the seventh aspect, in which all of the first member is in the recess.

第９態様は、第７態様または第８態様の減圧乾燥装置であって、前記第１部材の前記端部が、前記内縁部と面一である。 A ninth aspect is the vacuum drying device of the seventh or eighth aspect, in which the end portion of the first member is flush with the inner edge portion.

第１０態様は、第１態様から第９態様のいずれか１つの減圧乾燥装置であって、前記基板保持部は、前記基板を前記第１主面が鉛直方向上向きとなる水平姿勢で保持し、前記第１部材、前記第２部材および前記排気口は、前記基板保持部に保持される前記基板の前記第２主面側に設けられている。 A tenth aspect is a vacuum drying device according to any one of the first to ninth aspects, wherein the substrate holding portion holds the substrate in a horizontal posture in which the first main surface faces vertically upward. The first member, the second member, and the exhaust port are provided on the second main surface side of the substrate held by the substrate holding portion.

第１１態様は、第１主面および第２主面を有し前記第１主面に処理液を有する基板を、減圧によって乾燥させる減圧乾燥方法であって、（ａ）収容空間に面する第１面を有しており、筐体に、前記基板を保持する工程と、（ｂ）前記（ａ）工程の後、前記第１面に設けられている凹部の深さ方向の底面に設けられている排気口から、前記収容空間の雰囲気を吸引する工程と、（ｃ）前記（ｂ）工程において、前記収容空間における、前記排気口と前記深さ方向に重なる位置に配される第１部材により、前記排気口に向かう気流の方向を変更する工程と、（ｄ）前記（ｂ）工程において、前記収容空間における、前記第１部材の端部および前記凹部の内縁部の双方と前記深さ方向に間隔をおいて重なる位置に配される第２部材により、前記排気口に向かう気流の方向を変更する工程とを含む。 The eleventh aspect is a vacuum drying method in which a substrate having a first main surface and a second main surface and having a treatment liquid on the first main surface is dried by reduced pressure, and (a) faces the accommodation space. It has one surface, and is provided on the bottom surface in the depth direction of the recess provided on the first surface after the step of holding the substrate and (b) the step (a) in the housing. In the step of sucking the atmosphere of the accommodation space from the exhaust port and (c) the step (b), the first member arranged at a position overlapping the exhaust port in the depth direction in the accommodation space. In the step of changing the direction of the airflow toward the exhaust port and (d) the step (b), both the end portion of the first member and the inner edge portion of the recess in the accommodation space and the depth thereof. The process includes a step of changing the direction of the airflow toward the exhaust port by the second member arranged at overlapping positions at intervals in the direction.

第１態様の減圧乾燥装置によると、排気口の上方が第１部材で覆われているため、収容空間の雰囲気を排気する際に、第１部材上方の雰囲気が排気口へ直接吸い込まれることを妨げることができる。また、凹部の縁部分と第１部材の端部との隙間が第２部材で覆われているため、第２部材上方の雰囲気が当該隙間に直接吸い込まれることを妨げることができる。これらの作用により、基板周囲の雰囲気の流速を低下できるため、乾燥むらの発生を軽減できる。 According to the decompression drying device of the first aspect, since the upper part of the exhaust port is covered with the first member, when the atmosphere of the accommodation space is exhausted, the atmosphere above the first member is directly sucked into the exhaust port. Can be hindered. Further, since the gap between the edge portion of the recess and the end portion of the first member is covered with the second member, it is possible to prevent the atmosphere above the second member from being directly sucked into the gap. Due to these actions, the flow velocity of the atmosphere around the substrate can be reduced, so that the occurrence of uneven drying can be reduced.

第２態様の減圧乾燥装置によると、第２主面を複数のピンで支持するため、接触面積を減らすことができるため、支持部材の接触による乾燥むらの発生を抑制できる。 According to the vacuum drying device of the second aspect, since the second main surface is supported by a plurality of pins, the contact area can be reduced, so that the occurrence of drying unevenness due to the contact of the support members can be suppressed.

第３態様の減圧乾燥装置によると、第１ピンと第２ピンとの間で、排気口に向かう気流の方向を変更することができる。 According to the vacuum drying device of the third aspect, the direction of the air flow toward the exhaust port can be changed between the first pin and the second pin.

第４態様の減圧乾燥装置によると、排気口から遠い第１基板位置と、排気口に近い第２基板位置の間で移動させることができる。このため、排気口に吸い込まれる雰囲気の速さ応じて、基板の位置を調整できる。 According to the vacuum drying device of the fourth aspect, it can be moved between the position of the first substrate far from the exhaust port and the position of the second substrate near the exhaust port. Therefore, the position of the substrate can be adjusted according to the speed of the atmosphere sucked into the exhaust port.

第５態様の減圧乾燥装置によると、減圧開始直後は、気流が速い排気口から離れた位置に配することができ、減圧が進んで排気口付近の流速が低下してから、基板を排気口に近づけることにより、流速の影響を抑制できる。さらに、排気口付近に近づけることにより、減圧乾燥を促進できる。 According to the decompression drying device of the fifth aspect, immediately after the start of decompression, the substrate can be arranged at a position away from the exhaust port where the air flow is fast, and after the decompression progresses and the flow velocity near the exhaust port decreases, the substrate is placed at the exhaust port. By approaching to, the influence of the flow velocity can be suppressed. Further, by bringing it closer to the vicinity of the exhaust port, vacuum drying can be promoted.

第６態様の減圧乾燥装置によると、第１部材が、第２部材よりも排気口に近い位置に配される。気流が比較的大きくなる排気口付近で、第１部材が排気口への引込みを抑制する。このため、基板の第１主面の処理液を乾燥させた際の気流の影響を低減でき、乾燥むらを抑制できる。 According to the vacuum drying device of the sixth aspect, the first member is arranged at a position closer to the exhaust port than the second member. In the vicinity of the exhaust port where the air flow becomes relatively large, the first member suppresses the drawing into the exhaust port. Therefore, the influence of the air flow when the treatment liquid on the first main surface of the substrate is dried can be reduced, and uneven drying can be suppressed.

第７態様の減圧乾燥装置によると、第１部材の少なくとも一部が凹部内にあるため、第１部材の凹部の外側に出る部分を小さくすることができる。これにより、収容空間における基板を配置可能な空間を大きく確保できる。 According to the vacuum drying device of the seventh aspect, since at least a part of the first member is inside the recess, the portion of the first member that protrudes outside the recess can be reduced. As a result, a large space in which the substrate can be placed can be secured in the accommodation space.

第８態様の減圧乾燥装置によると、第１部材の全部が凹部内にあるため、収容空間における基板を配置可能な空間を大きく確保できる。 According to the vacuum drying device of the eighth aspect, since all of the first member is in the recess, a large space in which the substrate can be placed can be secured in the accommodation space.

第９態様の減圧乾燥装置によると、第１部材の端部と、凹部の内縁部と面一であるため、雰囲気が第１部材の端部と凹部の内縁部の隙間を通る際に、気流が乱れることを軽減できる。 According to the vacuum drying device of the ninth aspect, since the end portion of the first member and the inner edge portion of the recess are flush with each other, the air flow when the atmosphere passes through the gap between the end portion of the first member and the inner edge portion of the recess. Can be reduced from being disturbed.

第１０態様の減圧乾燥装置によると、基板の処理液を有する面が鉛直方向上向きに配置した状態で、排気口から収容空間の雰囲気を吸い込むことにより、基板周囲の雰囲気を鉛直方向下側に向けて移動させることができる。 According to the vacuum drying apparatus of the tenth aspect, the atmosphere around the substrate is directed downward in the vertical direction by sucking the atmosphere of the accommodation space from the exhaust port in a state where the surface of the substrate having the processing liquid is arranged vertically upward. Can be moved.

第１１態様の減圧乾燥方法によると、排気口の上方が第１部材で覆われているため、収容空間の雰囲気を排気する際に、第１部材上方の雰囲気が排気口へ直接吸い込まれることを妨げることができる。また、凹部の縁部分と第１部材の端部との隙間が第２部材で覆われているため、第２部材上方の雰囲気が当該隙間に直接吸い込まれることを妨げることができる。これらの作用により、基板周囲の雰囲気の流速を低下できるため、乾燥むらの発生を軽減できる。 According to the decompression drying method of the eleventh aspect, since the upper part of the exhaust port is covered with the first member, when the atmosphere of the accommodation space is exhausted, the atmosphere above the first member is directly sucked into the exhaust port. Can be hindered. Further, since the gap between the edge portion of the recess and the end portion of the first member is covered with the second member, it is possible to prevent the atmosphere above the second member from being directly sucked into the gap. Due to these actions, the flow velocity of the atmosphere around the substrate can be reduced, so that the occurrence of uneven drying can be reduced.

実施形態における減圧乾燥装置１のチャンバ１０内部を鉛直方向上側から見た様子を示す概略平面図である。It is a schematic plan view which shows the state which the inside of the chamber 10 of the vacuum drying apparatus 1 in an Embodiment is seen from the upper side in the vertical direction. 実施形態の減圧乾燥装置１における４つの第２整流板４０および昇降機構５０を除いたチャンバ１０内部を鉛直方向上側から見た様子を示す概略平面図である。FIG. 5 is a schematic plan view showing a state in which the inside of the chamber 10 excluding the four second straightening vanes 40 and the elevating mechanism 50 in the vacuum drying device 1 of the embodiment is viewed from above in the vertical direction. 図１のＡ−Ａ線に沿う位置における減圧乾燥装置１の概略断面図である。It is the schematic sectional drawing of the vacuum drying apparatus 1 at the position along the line AA of FIG. 処理対象の基板９が搬入されたときの減圧乾燥装置１を示す概略側面図である。It is a schematic side view which shows the vacuum drying apparatus 1 when the substrate 9 to be processed is carried in. 排気を開始したときの減圧乾燥装置１を示す概略側面図である。It is a schematic side view which shows the vacuum drying apparatus 1 at the time of starting exhaust. 排気を開始してから所定時間経過したときの減圧乾燥装置１を示す概略側面図である。It is a schematic side view which shows the decompression drying apparatus 1 when a predetermined time elapses from the start of exhaust. 処理後の基板９を外部に搬出させるときの減圧乾燥装置１を示す概略側面図である。It is a schematic side view which shows the vacuum drying apparatus 1 at the time of carrying out a substrate 9 after processing to the outside. 変形例に係る減圧乾燥装置１Ａを示す図である。It is a figure which shows the vacuum drying apparatus 1A which concerns on the modification.

以下、添付の図面を参照しながら、本発明の実施形態について説明する。なお、この実施形態に記載されている構成要素はあくまでも例示であり、本発明の範囲をそれらのみに限定する趣旨のものではない。図面においては、理解容易のため、必要に応じて各部の寸法や数が誇張又は簡略化して図示されている場合がある。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. It should be noted that the components described in this embodiment are merely examples, and the scope of the present invention is not limited to them. In the drawings, the dimensions and numbers of each part may be exaggerated or simplified as necessary for easy understanding.

相対的または絶対的な位置関係を示す表現（例えば「一方向に」「一方向に沿って」「平行」「直交」「中心」「同心」「同軸」等）は、特に断らない限り、その位置関係を厳密に表すのみならず、公差もしくは同程度の機能が得られる範囲で相対的に角度または距離に関して変位された状態も表すものとする。等しい状態であることを示す表現（例えば「同一」「等しい」「均質」等）は、特に断らない限り、定量的に厳密に等しい状態を表すのみならず、公差もしくは同程度の機能が得られる差が存在する状態も表すものとする。形状を示す表現（例えば、「四角形状」または「円筒形状」等）は、特に断らない限り、幾何学的に厳密にその形状を表すのみならず、同程度の効果が得られる範囲で、例えば凹凸や面取り等を有する形状も表すものとする。一の構成要素を「備える」「具える」「具備する」「含む」又は「有する」という表現は、他の構成要素の存在を除外する排他的表現ではない。「〜の上」とは、特に断らない限り、２つの要素が接している場合のほか、２つの要素が離れている場合も含む。 Expressions indicating relative or absolute positional relationships (for example, "in one direction", "along one direction", "parallel", "orthogonal", "center", "concentric", "coaxial", etc.) are not specified unless otherwise specified. Not only does it represent the positional relationship exactly, but it also represents the state of being displaced relative to the angle or distance within the range where tolerance or similar function can be obtained. Expressions indicating equal states (for example, "same", "equal", "homogeneous", etc.) not only represent quantitatively exactly equal states, but also provide tolerances or similar functions, unless otherwise specified. It shall also represent the state in which there is a difference. Unless otherwise specified, the expression indicating the shape (for example, "square shape" or "cylindrical shape") not only expresses the shape strictly geometrically, but also within the range where the same effect can be obtained, for example. A shape having irregularities, chamfers, etc. shall also be represented. The expressions "equipped", "equipped", "equipped", "included", or "have" one component are not exclusive expressions that exclude the existence of other components. Unless otherwise specified, "above" includes not only the case where two elements are in contact with each other but also the case where two elements are separated from each other.

＜１． 実施形態＞
図１は、実施形態における減圧乾燥装置１のチャンバ１０内部を鉛直方向上側から見た様子を示す概略平面図である。図２は、実施形態の減圧乾燥装置１における４つの第２整流板４０および昇降機構５０を除いたチャンバ１０内部を鉛直方向上側から見た様子を示す概略平面図である。図３は、図１のＡ−Ａ線に沿う位置における減圧乾燥装置１の概略断面図である。 <1. Embodiment>
FIG. 1 is a schematic plan view showing the inside of the chamber 10 of the vacuum drying device 1 according to the embodiment as viewed from above in the vertical direction. FIG. 2 is a schematic plan view showing the inside of the chamber 10 excluding the four second straightening vanes 40 and the elevating mechanism 50 in the vacuum drying device 1 of the embodiment as viewed from above in the vertical direction. FIG. 3 is a schematic cross-sectional view of the vacuum drying device 1 at a position along the line AA of FIG.

各図においては、減圧乾燥装置１の各部の位置関係を明確にするため、Ｘ軸、Ｙ軸およびＺ軸を付している。本例では、Ｘ軸方向およびＹ軸方向は水平方向であり、Ｚ軸方向は鉛直方向である。各軸において、矢印の先端が向く方を＋（プラス）方向とし、その逆方向を−（マイナス）方向とする。鉛直方向の上向きを「＋Ｚ方向」、下向きを「−Ｚ方向」とする。下記に説明する各部の位置関係は一例であり、これに限定する趣旨のものではない。 In each figure, an X-axis, a Y-axis, and a Z-axis are attached in order to clarify the positional relationship of each part of the vacuum drying device 1. In this example, the X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is the vertical direction. In each axis, the direction in which the tip of the arrow points is the + (plus) direction, and the opposite direction is the- (minus) direction. The upward direction in the vertical direction is defined as "+ Z direction", and the downward direction is defined as "-Z direction". The positional relationship of each part described below is an example, and is not intended to be limited to this.

減圧乾燥装置１は、チャンバ１０を備える。チャンバ１０は、直方体状であり、内部に収容空間１０Ｓを有する筐体である。減圧乾燥装置１は、この収容空間１０Ｓに基板９を収容し、基板９の上面９０（第１主面）に塗布された処理液を減圧によって乾燥させる減圧乾燥処理を行う。 The vacuum drying device 1 includes a chamber 10. The chamber 10 is a rectangular parallelepiped housing having a storage space 10S inside. The vacuum drying device 1 accommodates the substrate 9 in the accommodation space 10S, and performs a vacuum drying treatment in which the treatment liquid applied to the upper surface 90 (first main surface) of the substrate 9 is dried by reduced pressure.

チャンバ１０の＋Ｙ側の側壁の＋Ｚ側寄りの部分には、開閉部１０Ｐが設けられている。開閉部１０Ｐは、チャンバ１０の外部とチャンバ１０の収容空間１０Ｓとの間で基板９を通すための開口を形成する。また、開閉部１０Ｐは、当該開口を閉じることによって、外部と収容空間１０Ｓとを遮断し、基板９の通過を不能とする。 An opening / closing portion 10P is provided on a portion of the side wall on the + Y side of the chamber 10 near the + Z side. The opening / closing portion 10P forms an opening for passing the substrate 9 between the outside of the chamber 10 and the accommodation space 10S of the chamber 10. Further, the opening / closing portion 10P closes the opening to block the outside from the accommodation space 10S, and makes it impossible for the substrate 9 to pass through.

チャンバ１０は、収容空間１０Ｓに面する底面１００を有する。底面１００は、水平面をなしている。底面１００には、４つの凹部１２が設けられている。４つの凹部１２は、−Ｘ側に配された２つの−Ｘ側凹部１２ａと、＋Ｘ側に配された２つの＋Ｘ側凹部１２ｂとを含む。 The chamber 10 has a bottom surface 100 facing the accommodation space 10S. The bottom surface 100 forms a horizontal plane. The bottom surface 100 is provided with four recesses 12. The four recesses 12 include two −X side recesses 12a arranged on the −X side and two + X side recesses 12b arranged on the + X side.

凹部１２の数量は、４つに限定されるものではなく、任意に変更してもよい。例えば、凹部１２が１つだけ設けられていてもよい。 The number of recesses 12 is not limited to four, and may be arbitrarily changed. For example, only one recess 12 may be provided.

以下、１つの凹部１２に着目して説明する。凹部１２は、底面１００から−Ｚ方向に凹む形状を有する。凹部１２は、鉛直方向上側からみて、矩形状であるが、これは必須ではない。凹部１２の深さ方向（Ｚ軸方向）の底面１２０は、水平面となっている。凹部１２は、底面１２０の外周部から鉛直方向上向きに起立する内壁面１２２を有する。内壁面１２２は、底面１２０に対して垂直となるように鉛直方向に延びる部分を有する。内壁面１２２が鉛直方向に延びていることにより、排気口１４へ向かう雰囲気の流れを鉛直方向に整えることができる。 Hereinafter, the description will be focused on one recess 12. The recess 12 has a shape that is recessed in the −Z direction from the bottom surface 100. The recess 12 has a rectangular shape when viewed from the upper side in the vertical direction, but this is not essential. The bottom surface 120 of the recess 12 in the depth direction (Z-axis direction) is a horizontal plane. The recess 12 has an inner wall surface 122 that rises vertically upward from the outer peripheral portion of the bottom surface 120. The inner wall surface 122 has a portion extending in the vertical direction so as to be perpendicular to the bottom surface 120. Since the inner wall surface 122 extends in the vertical direction, the flow of the atmosphere toward the exhaust port 14 can be adjusted in the vertical direction.

凹部１２の底面１２０には排気口１４が設けられている。すなわち、減圧乾燥装置１は、４つの排気口１４を有している。排気口１４は、凹部１２を介して収容空間１０Ｓに連続している。排気口１４は、吸引機構２０に接続されている。吸引機構２０は、制御部７０からの制御指令に応じて動作する不図示の真空ポンプを有する。吸引機構２０は、制御指令に応じて、排気口１４を介して収容空間１０Ｓ内の雰囲気を吸引し、外部に排出する。 An exhaust port 14 is provided on the bottom surface 120 of the recess 12. That is, the vacuum drying device 1 has four exhaust ports 14. The exhaust port 14 is continuous with the accommodation space 10S via the recess 12. The exhaust port 14 is connected to the suction mechanism 20. The suction mechanism 20 has a vacuum pump (not shown) that operates in response to a control command from the control unit 70. The suction mechanism 20 sucks the atmosphere in the accommodation space 10S through the exhaust port 14 and discharges it to the outside in response to the control command.

減圧乾燥装置１は、４つの第１整流板３０（第１部材）を備えている。本例では、４つの凹部１２各々の内側に第１整流板３０が１つずつ配されている。４つの第１整流板３０は、２つの−Ｘ側凹部１２ａ各々の内側に１つずつ配されている２つの−Ｘ側第１整流板３０ａと、２つの＋Ｘ側凹部１２ｂ各々の内側に１つずつ配されている２つの＋Ｘ側第１整流板３０ｂとを含む。 The vacuum drying device 1 includes four first straightening vanes 30 (first members). In this example, one first straightening vane 30 is arranged inside each of the four recesses 12. The four first straightening vanes 30 are the two −X side first straightening vanes 30a arranged inside each of the two −X side recesses 12a and one inside each of the two + X side recesses 12b. It includes two + X-side first straightening vanes 30b arranged one by one.

各第１整流板３０は、収容空間１０Ｓにおける、排気口１４とＺ軸方向に重なる位置に配されている。第１整流板３０は、板状の部材であり、各凹部１２の深さ方向の開口よりも小さく、かつ、各排気口１４の開口面積よりも大きい。第１整流板３０は、水平面に平行な姿勢で配置されている。 Each first straightening vane 30 is arranged at a position in the accommodation space 10S so as to overlap the exhaust port 14 in the Z-axis direction. The first straightening vane 30 is a plate-shaped member, which is smaller than the opening in the depth direction of each recess 12 and larger than the opening area of each exhaust port 14. The first straightening vane 30 is arranged in a posture parallel to the horizontal plane.

各第１整流板３０は、その全体が、対応する凹部１２内に配されている。本例では、各第１整流板３０の上面は、対応する凹部１２の端部を含む外面１０２と同じ高さにある。各第１整流板３０の上面は、対応する凹部１２の内縁部である底面１００のうち各凹部１２の周りを囲む内縁部を含む外面１０２と面一となっている。このように、第１整流板３０を凹部１２内に設けることにより、収容空間１０Ｓにおける基板９を配置可能な空間を大きくすることができる。また、収容空間１０ＳのＺ軸方向の長さ寸法を小さくすることができる。 The entire first straightening vane 30 is arranged in the corresponding recess 12. In this example, the upper surface of each first straightening vane 30 is at the same height as the outer surface 102 including the end of the corresponding recess 12. The upper surface of each first straightening vane 30 is flush with the outer surface 102 including the inner edge portion surrounding each recess 12 in the bottom surface 100 which is the inner edge portion of the corresponding recess 12. By providing the first straightening vane 30 in the recess 12 in this way, it is possible to increase the space in which the substrate 9 can be arranged in the accommodation space 10S. Further, the length dimension of the accommodation space 10S in the Z-axis direction can be reduced.

なお、第１整流板３０の一部分が、凹部１２内であって、外面１０２よりも底面１００側（−Ｚ側）にあってもよい。すなわち、第１整流板３０の一部分が、凹部１２外であって外面１０２よりも上側（＋Ｚ側）にあってもよい。このように一部分であっても、第１整流板３０を凹部１２内に入れることにより、チャンバ１０のＺ軸方向の長さを小さくすることができる。 A part of the first straightening vane 30 may be inside the recess 12 and may be on the bottom surface 100 side (−Z side) of the outer surface 102. That is, a part of the first straightening vane 30 may be outside the recess 12 and above the outer surface 102 (+ Z side). By inserting the first straightening vane 30 into the recess 12, the length of the chamber 10 in the Z-axis direction can be reduced even if it is only a part of the chamber 10.

第１整流板３０は、凹部１２の矩形状の内縁部との間で、隙間が設けられている。詳細には、第１整流板３０の−Ｘ側端部３２ａと凹部１２の−Ｘ側縁部１２４ａとの間に−Ｘ側隙間３４ａが設けられ、第１整流板３０の＋Ｘ側端部３２ｂと凹部１２の＋Ｘ側縁部１２４ｂとの間に＋Ｘ側隙間３４ｂが設けられている。 The first straightening vane 30 is provided with a gap between the first straightening vane 30 and the rectangular inner edge of the recess 12. Specifically, an −X side gap 34a is provided between the −X side end portion 32a of the first straightening vane 30 and the −X side edge portion 124a of the recess 12, and the + X side end portion 32b of the first straightening vane 30 is provided. A + X side gap 34b is provided between the recess 12 and the + X side edge portion 124b of the recess 12.

減圧乾燥装置１は、４つの第２整流板４０（第２部材）を備えている。４つの第２整流板４０は、−Ｘ側から＋Ｘ側に向けて、順に、第２整流板４０ａ，４０ｂ，４０ｃ，４０ｄを含む。これら４つの第２整流板４０ａ−４０ｄは、長方形の板状である。Ｙ軸方向の長さ寸法は、４つの第２整流板４０ａ−４０ｄで同一である。また、Ｘ軸方向の幅寸法は、２つの第２整流板４０ａ，４０ｄで同一であり、２つの第２整流板４０ｂ，４０ｃで同一である。２つの第２整流板４０ａ，４０ｄは、Ｘ軸方向に間隔をあけて配置されており、これらの間に２つの第２整流板４０ｂ，４０ｃが配置されている。２つの第２整流板４０ｂ，４０ｃも、Ｘ軸方向に間隔をあけて配置されている。 The vacuum drying device 1 includes four second straightening vanes 40 (second members). The four second straightening vanes 40 include the second straightening vanes 40a, 40b, 40c, and 40d in order from the −X side to the + X side. These four second straightening vanes 40a-40d have a rectangular plate shape. The length dimension in the Y-axis direction is the same for the four second straightening vanes 40a-40d. Further, the width dimension in the X-axis direction is the same for the two second straightening vanes 40a and 40d, and is the same for the two second straightening vanes 40b and 40c. The two second straightening vanes 40a and 40d are arranged at intervals in the X-axis direction, and the two second straightening vanes 40b and 40c are arranged between them. The two second straightening vanes 40b and 40c are also arranged at intervals in the X-axis direction.

第２整流板４０ａ−４０ｄの各々は、第１整流板３０の外周端部と外面１０２の双方に対して、Ｚ軸方向に間隔をあけて、かつ、Ｚ軸方向に重なる位置に設けられている。 Each of the second straightening vanes 40a-40d is provided at a position where they are spaced apart in the Z-axis direction and overlapped in the Z-axis direction with respect to both the outer peripheral end portion and the outer surface 102 of the first straightening vane 30. There is.

例えば、最も−Ｘ側にある第２整流板４０ａは、２つの−Ｘ側第１整流板３０ａの−Ｘ側端部３２ａおよびこれらに対向する２つの−Ｘ側凹部１２ａの−Ｘ側縁部１２４ａ（内縁部）を含む外面１０２部分とＺ軸方向に重なる。すなわち、第２整流板４０ａは、２つの−Ｘ側凹部１２ａの−Ｘ側隙間３４ａの上方を覆っている。 For example, the second straightening vane 40a on the most −X side is the −X side end portion 32a of the two −X side first straightening vanes 30a and the −X side edge portion of the two −X side recesses 12a facing them. It overlaps the outer surface 102 portion including 124a (inner edge portion) in the Z-axis direction. That is, the second straightening vane 40a covers the upper part of the −X side gap 34a of the two −X side recesses 12a.

第２整流板４０ｂは、２つの−Ｘ側第１整流板３０ａの＋Ｘ側端部３２ｂおよびこれらに対向する２つの＋Ｘ側縁部１２４ｂ（内縁部）を含む外面１０２部分とＺ軸方向に重なる。第２整流板４０ｂは、２つの−Ｘ側凹部１２ａの＋Ｘ側隙間３４ｂの上方を覆っている。 The second straightening vane 40b overlaps the outer surface 102 portion including the + X side end portion 32b of the two −X side first straightening vanes 30a and the two + X side edge portions 124b (inner edge portions) facing them in the Z-axis direction. .. The second straightening vane 40b covers the upper part of the + X side gap 34b of the two −X side recesses 12a.

第２整流板４０ｃは、２つの＋Ｘ側第１整流板３０ｂの−Ｘ側端部３２ａおよびこれらに対向する２つの＋Ｘ側凹部１２ｂの−Ｘ側縁部１２４ａ（内縁部）を含む外面１０２部分とＺ軸方向に重なる。第２整流板４０ｃは、２つの＋Ｘ側凹部１２ｂの−Ｘ側隙間３４ａの上方を覆っている。 The second straightening vane 40c is an outer surface 102 portion including the −X side end portion 32a of the two + X side first straightening vanes 30b and the −X side edge portion 124a (inner edge portion) of the two + X side recesses 12b facing them. And overlap in the Z-axis direction. The second straightening vane 40c covers the upper part of the −X side gap 34a of the two + X side recesses 12b.

最も＋Ｘ側にある第２整流板４０ｄは、２つの＋Ｘ側第１整流板３０ｂの＋Ｘ側端部３２ｂおよびこれらに対向する２つの＋Ｘ側凹部１２ｂの＋Ｘ側縁部１２４ｂを含む外面１０２部分とＺ軸方向に重なる。そして第２整流板４０ｄは、２つの＋Ｘ側凹部１２ｂの＋Ｘ側隙間３４ｂの上方を覆っている。 Most + X second rectifying plate 40 d on the side, outer surface 102 portion including two + X side of the first rectifier plate 30b + X side end portion 32b and the two + X side recesses 12b facing thereto + X side edge portion 124b And overlap in the Z-axis direction. The second straightening vane 40d covers the upper part of the + X side gap 34b of the two + X side recesses 12b.

昇降機構５０は、基板９を複数の第２整流板４０の上方に支持するとともに、基板９を鉛直方向に昇降移動させる。昇降機構５０は、６つの支持部５２および昇降駆動部５４を含む。 The elevating mechanism 50 supports the substrate 9 above the plurality of second straightening vanes 40, and moves the substrate 9 up and down in the vertical direction. The elevating mechanism 50 includes six support portions 52 and an elevating drive portion 54.

６つの支持部５２は、第１整流板３０に対して排気口１４とは反対側に配置されている。３つの支持部５２ａおよび３つの支持部５２ｂを含む。支持部５２ａ，５２ｂ各々は、Ｙ軸方向に延びるリフトプレート５２０と、１つのリフトプレート５２０上においてＹ軸方向に間隔をあけて配置されている複数のピン５２２を備えている。本例では、収容空間１０Ｓにおける−Ｘ側寄りの位置、Ｘ軸方向中央の位置、＋Ｘ側寄りの位置のそれぞれに、支持部５２ａ，５２ｂが１つずつ配置されている。鉛直方向上側から見て、第２整流板４０ａ，４０ｂ間、第２整流板４０ｂ，４０ｃ間、第２整流板４０ｃ，４０ｄ間のそれぞれに、支持部５２ａ，５２ｂが１つずつ配置されている。基板９は、支持部５２ａまたは支持部５２ｂが備える複数のピン５２２の上端部に支持されることによって、第１整流板３０および第２整流板４０に対して排気口１４とは反対側の位置に保持される。 The six support portions 52 are arranged on the side opposite to the exhaust port 14 with respect to the first straightening vane 30. Includes three supports 52a and three supports 52b. Each of the support portions 52a and 52b includes a lift plate 520 extending in the Y-axis direction and a plurality of pins 522 arranged at intervals in the Y-axis direction on one lift plate 520. In this example, one support portion 52a and one 52b are arranged at each of the position closer to the −X side, the position centered in the X-axis direction, and the position closer to the + X side in the accommodation space 10S. When viewed from the upper side in the vertical direction, one support portion 52a, 52b is arranged between the second straightening vanes 40a and 40b, between the second straightening vanes 40b and 40c, and between the second straightening vanes 40c and 40d, respectively. .. The substrate 9 is supported by the upper ends of the plurality of pins 522 included in the support portion 52a or the support portion 52b, so that the substrate 9 is positioned opposite to the exhaust port 14 with respect to the first straightening vane 30 and the second straightening vane 40. Is held in.

昇降駆動部５４は、３つの支持部５２ａ各々および３つの支持部５２ｂ各々のリフトプレート５２０に接続されており、これらを個別に鉛直方向に昇降させる。昇降駆動部５４の駆動力は、チャンバ１０の底面１００を貫通してリフトプレート５２０の下面に連結荒れた棒状の部材（不図示）を介して伝達されるとよい。昇降駆動部５４の駆動力により、支持部５２ａ各々および支持部５２ｂ各々が鉛直方向に昇降する。なお、６つの支持部５２のうち２つ以上が、一体に昇降するように直接連結されていてもよい。例えば、３つの支持部５２ａを互いに連結して一体に昇降させてもよい。また、３つの支持部５２ｂについても互いに連結させて一体に昇降させてもよい。このような場合、昇降駆動部５４の動作軸を減らすことができるため、昇降駆動部５４の構成を簡略化できる。 The elevating drive unit 54 is connected to a lift plate 520 of each of the three support portions 52a and each of the three support portions 52b, and these are individually moved up and down in the vertical direction. The driving force of the elevating drive unit 54 may be transmitted through a bottom surface 100 of the chamber 10 and connected to the bottom surface of the lift plate 520 via a rough rod-shaped member (not shown). By the driving force of the elevating drive unit 54, each of the support portions 52a and each of the support portions 52b moves up and down in the vertical direction. In addition, two or more of the six support portions 52 may be directly connected so as to move up and down integrally. For example, the three support portions 52a may be connected to each other and moved up and down integrally. Further, the three support portions 52b may also be connected to each other and moved up and down integrally. In such a case, since the operating axis of the elevating drive unit 54 can be reduced, the configuration of the elevating drive unit 54 can be simplified.

支持部５２ａが備える複数のピン５２２は、支持部５２ｂが備える複数のピン５２２とはＹ軸方向の位置が異なるように配置されている。これは、様々な大きさの基板９に対応するためである。なお、各ピン５２２の位置は、これに限定されるものではなく、任意に設定してもよい。 The plurality of pins 522 included in the support portion 52a are arranged so as to be positioned differently from the plurality of pins 522 included in the support portion 52b in the Y-axis direction. This is to support substrates 9 of various sizes. The position of each pin 522 is not limited to this, and may be set arbitrarily.

例えば、−Ｘ側寄りの支持部５２ａが備える複数のピン５２２は、Ｙ軸方向に配された複数の第１ピンの一例である。Ｘ軸方向中央の支持部５２ａが備える複数のピン５２２は、−Ｘ側寄りの支持部５２ａが備える複数のピン５２２に対してＸ軸方向に間隔をあけて、Ｙ軸方向に配された複数の第２ピンの一例である。第２整流板４０ｂは、これら複数の第１ピンおよび複数の第２ピンの間に配された第２部材の一例である。 For example, the plurality of pins 522 included in the support portion 52a closer to the −X side is an example of the plurality of first pins arranged in the Y-axis direction. The plurality of pins 522 included in the support portion 52a in the center in the X-axis direction are arranged in the Y-axis direction at intervals in the X-axis direction with respect to the plurality of pins 522 included in the support portion 52a closer to the −X side. This is an example of the second pin of. The second straightening vane 40b is an example of a second member arranged between the plurality of first pins and the plurality of second pins.

また、Ｘ軸方向中央の支持部５２ａが備える複数のピン５２２は複数の第１ピンの一例であり、＋Ｘ側寄りの支持部５２ａが備える複数のピン５２２は複数の第２ピンの一例である。第２整流板４０ｃは、これら複数の第１ピンおよび第２ピンの間に配された第２部材の一例である。 Further, the plurality of pins 522 included in the support portion 52a at the center in the X-axis direction are examples of the plurality of first pins, and the plurality of pins 522 included in the support portion 52a closer to the + X side are examples of the plurality of second pins. .. The second straightening vane 40c is an example of a second member arranged between the plurality of first pins and the second pins.

減圧乾燥装置１は、制御部７０を備えている。制御部７０は、各種演算処理を行うＣＰＵ、基本プログラムを記憶する読み出し専用のメモリであるＲＯＭ、各種情報を記憶する読み書き自在のメモリであるＲＡＭを備える、一般的なコンピュータとして構成されていてもよい。制御部７０は、制御用アプリケーション（プログラム）または各種データ等を記憶する補助記憶装置を備えていてもよい。ＣＰＵが制御用アプリケーションに従って動作することにより、各種機能が実現されるとよい。制御部７０は、開閉部１０Ｐ、吸引機構２０および昇降駆動部５４に通信可能に接続されており、これらに制御指令を送信することによって、これらの動作を制御する。 The vacuum drying device 1 includes a control unit 70. Even if the control unit 70 is configured as a general computer, the control unit 70 includes a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, and a RAM that is a read / write memory that stores various information. Good. The control unit 70 may include an auxiliary storage device that stores a control application (program) or various data. It is preferable that various functions are realized by operating the CPU according to the control application. The control unit 70 is communicably connected to the opening / closing unit 10P, the suction mechanism 20, and the elevating drive unit 54, and controls their operations by transmitting control commands to them.

＜動作説明＞
上記構成の減圧乾燥装置１の減圧乾燥処理における動作を説明する。なお、特に断らない限り、減圧乾燥装置１の動作は、制御部７０からの制御指令に応じて実行されるものとする。 <Operation explanation>
The operation of the vacuum drying apparatus 1 having the above configuration in the vacuum drying process will be described. Unless otherwise specified, the operation of the vacuum drying device 1 shall be executed in response to a control command from the control unit 70.

図４は、処理対象の基板９が搬入されたときの減圧乾燥装置１を示す概略側面図である。減圧乾燥処理は、処理対象の基板９（上面９０に処理液が塗布された基板９）を外部からチャンバ１０の収容空間１０Ｓに搬入する、搬入工程Ｓ１を含む。 FIG. 4 is a schematic side view showing the vacuum drying device 1 when the substrate 9 to be processed is carried in. The vacuum drying process includes a carry-in step S1 in which the substrate 9 to be treated (the substrate 9 having the treatment liquid coated on the upper surface 90) is carried from the outside into the accommodation space 10S of the chamber 10.

搬入工程Ｓ１では、制御部７０が、処理対象の基板９の支持に対応した複数の支持部５２（図４に示す例では、３つの支持部５２ａ）を、所定の鉛直位置に配置する。その後、制御部７０は、開閉部１０Ｐを開ける。開放された開閉部１０Ｐを通じて、不図示の搬送装置が基板９を収容空間１０Ｓに搬入する。そして、不図示の搬送装置が、基板９を当該複数の支持部５２の各ピン５２２上に載置する。これにより、基板９が上位置Ｌ１（第１基板位置）にて保持された状態となる。 In the carry-in step S1, the control unit 70 arranges a plurality of support units 52 (three support units 52a in the example shown in FIG. 4) corresponding to the support of the substrate 9 to be processed at predetermined vertical positions. After that, the control unit 70 opens the opening / closing unit 10P. A transfer device (not shown) carries the substrate 9 into the accommodation space 10S through the open / close portion 10P. Then, a transfer device (not shown) places the substrate 9 on each pin 522 of the plurality of support portions 52. As a result, the substrate 9 is held at the upper position L1 (first substrate position).

搬送装置は、例えば、基板９の下面を支持するＹ軸方向に延びる複数のフィンガー部８０を備えるとよい。複数のフィンガー部８０は、−Ｘ側寄りの位置に配された支持部５２ｂおよび中央の位置に配された支持部５２ａの間に進入する１つ以上のフィンガー部８０と、中央の位置に配された支持部５２ｂと＋Ｘ側の位置に配された支持部５２ａの間の位置に進入可能な１つ以上のフィンガー部８０とを含むとよい（図４参照）。基板９を支持する各フィンガー部８０を、開閉部１０Ｐを介して収容空間１０Ｓに進入させ、その後、各フィンガー部８０を対応する各支持部５２間で下方に移動させる。これにより、各フィンガー部８０と各支持部５２とが干渉することなく、基板９が各支持部５２に受け渡される。 The transport device may include, for example, a plurality of finger portions 80 extending in the Y-axis direction that support the lower surface of the substrate 9. The plurality of finger portions 80 are arranged at the center position with one or more finger portions 80 that enter between the support portion 52b arranged at the position closer to the −X side and the support portion 52a arranged at the central position. It is preferable to include one or more finger portions 80 that can enter a position between the supported support portion 52b and the support portion 52a arranged at the position on the + X side (see FIG. 4). Each finger portion 80 that supports the substrate 9 is brought into the accommodation space 10S via the opening / closing portion 10P, and then each finger portion 80 is moved downward between the corresponding support portions 52. As a result, the substrate 9 is delivered to each support portion 52 without interference between each finger portion 80 and each support portion 52.

図５は、排気を開始したときの減圧乾燥装置１を示す概略側面図である。搬入工程Ｓ１が完了すると、排気工程Ｓ２が行われる。排気工程Ｓ２では、制御部７０が吸引機構２０を作動させることにより、収容空間１０Ｓの雰囲気を複数の排気口１４から排出する。 FIG. 5 is a schematic side view showing the decompression drying device 1 when the exhaust is started. When the carry-in step S1 is completed, the exhaust step S2 is performed. In the exhaust step S2, the control unit 70 operates the suction mechanism 20 to exhaust the atmosphere of the accommodation space 10S from the plurality of exhaust ports 14.

図５に示すように、収容空間１０Ｓの雰囲気は、排気口１４に向かって移動する。ここで、収容空間１０Ｓの雰囲気の排気口１４に向かう移動の方向は、第２整流板４０ａ−４０ｄによって変更される。詳細には、第２整流板４０ａ−４０上の雰囲気の進行方向は、水平面であるこれらの上面によって、それらの端部に向かう水平方向に変更される。そして、雰囲気は、第２整流板４０ａ，４０ｂの隙間、第２整流板４０ｂ，４０ｃの隙間、および、収容空間１０Ｓの四方を取り囲む壁面１０４と第２整流板４０ａ−４０ｄ各々の端部の隙間を下向きに通過して、第２整流板４０ａ−４０ｄの下方に移動する。 As shown in FIG. 5, the atmosphere of the accommodation space 10S moves toward the exhaust port 14. Here, the direction of movement toward the exhaust port 14 in the atmosphere of the accommodation space 10S is changed by the second straightening vanes 40a-40d. Specifically, the traveling direction of the atmosphere on the second straightening vanes 40a-40 is changed by these upper surfaces, which are horizontal planes, in the horizontal direction toward their ends. The atmosphere is such that the gaps between the second straightening vanes 40a and 40b, the gaps between the second straightening vanes 40b and 40c, and the gaps between the wall surfaces 104 surrounding the four sides of the accommodation space 10S and the ends of the second straightening vanes 40a-40d. Passes downward and moves below the second straightening vane 40a-40d.

雰囲気の排気口１４へ向かう移動の方向は、複数の第１整流板３０によって変更される。詳細には、第２整流板４０ａ−４０ｄの下方へ移動した雰囲気の進行方向は、水平面である複数の第１整流板３０（−Ｘ側第１整流板３０ａおよび＋Ｘ側第１整流板３０ｂ）の上面によって、それらの端部（−Ｘ側端部３２ａおよび＋Ｘ側端部３２ｂを含む。）に向かう水平方向に変更される。また、第２整流板４０ａ−４０ｄの下方へ移動した雰囲気の進行方向は、水平面である底面１００（外面１０２）によって、その端部である凹部１２の内縁部に向かう水平方向に変更される。その後、雰囲気は、凹部１２の内縁部（−Ｘ側縁部１２４ａおよび＋Ｘ側縁部１２４ｂを含む。）と第１整流板３０の周端部との隙間（−Ｘ側隙間３４ａおよび＋Ｘ側隙間３４ｂを含む。）を下向きに移動することにより、各凹部１２内に進入する。そして、各凹部１２内の排気口１４を介して外部に排出される。 The direction of movement toward the exhaust port 14 of the atmosphere is changed by the plurality of first straightening vanes 30. Specifically, the traveling direction of the atmosphere moved downward of the second straightening vane 40a-40d is a plurality of first straightening vanes 30 (−X side first straightening vane 30a and + X side first straightening vane 30b) which are horizontal planes. The top surface of the is changed horizontally towards their ends (including the -X side end 32a and the + X side end 32b). Further, the traveling direction of the atmosphere moved downward of the second straightening vane 40a-40d is changed to the horizontal direction toward the inner edge of the recess 12 which is the end portion thereof by the bottom surface 100 (outer surface 102) which is a horizontal plane. After that, the atmosphere is such that the gap between the inner edge portion of the recess 12 (including the −X side edge portion 124a and the + X side edge portion 124b) and the peripheral end portion of the first straightening vane 30 (the −X side gap 34a and the + X side gap). By moving downward (including 34b), it enters each recess 12. Then, it is discharged to the outside through the exhaust port 14 in each recess 12.

排気工程Ｓ２の開始直後は、収容空間１０Ｓに多くの雰囲気が存在するため、排気口１４付近で雰囲気の流速が大きくなる。本実施形態では、この排気工程Ｓ２の開始直後は、このような流速が速くなる排気口１４付近から離れた第１基板位置Ｌ１に基板９を配置することによって、上面９０に塗布された処理液の表面が乱れたり、突沸したりすることを抑制できる。これによって、乾燥むらの発生を軽減できる。 Immediately after the start of the exhaust step S2, since there are many atmospheres in the accommodation space 10S, the flow velocity of the atmosphere increases in the vicinity of the exhaust port 14. In the present embodiment, immediately after the start of the exhaust step S2, the treatment liquid applied to the upper surface 90 by arranging the substrate 9 at the first substrate position L1 away from the vicinity of the exhaust port 14 where the flow velocity becomes high. It is possible to prevent the surface of the surface from being disturbed or suddenly boiling. As a result, the occurrence of uneven drying can be reduced.

図６は、排気を開始してから所定時間経過したときの減圧乾燥装置１を示す概略側面図である。排気工程Ｓ２の間、下降工程Ｓ３が行われる。下降工程Ｓ３では、制御部７０が、排気を開始してから所定時間が経過した後に、複数の支持部５２を下降させる。これによって、基板Ｗが上位置Ｌ１から下位置Ｌ２（第２基板位置）まで移動する。下位置Ｌ２は、上位置Ｌ１よりも鉛直方向下側であって、排気口１４に近い位置である。 FIG. 6 is a schematic side view showing the decompression drying device 1 when a predetermined time has elapsed since the start of exhaust gas. During the exhaust step S2, the lowering step S3 is performed. In the lowering step S3, the control unit 70 lowers the plurality of support units 52 after a predetermined time has elapsed from the start of exhausting. As a result, the substrate W moves from the upper position L1 to the lower position L2 (second substrate position). The lower position L2 is vertically lower than the upper position L1 and is close to the exhaust port 14.

下位置Ｌ２は、上位置Ｌ１よりも排気口１４に近いため、雰囲気が相対的に薄く、気圧が低い。このため、基板９を下位置Ｌ２に配置することによって、基板９の処理液を効率的に乾燥させることができる。下位置Ｌ２に配置したとしても、基板９の周囲の雰囲気の流速は比較的小さいため、処理液の表面の乱れや処理液の突沸が起こる可能性は低い。 Since the lower position L2 is closer to the exhaust port 14 than the upper position L1, the atmosphere is relatively thin and the atmospheric pressure is low. Therefore, by arranging the substrate 9 at the lower position L2, the processing liquid of the substrate 9 can be efficiently dried. Even if it is arranged at the lower position L2, since the flow velocity of the atmosphere around the substrate 9 is relatively small, it is unlikely that the surface of the treatment liquid is disturbed or the treatment liquid is suddenly boiled.

図７は、処理後の基板９を外部に搬出させるときの減圧乾燥装置１を示す概略側面図である。排気工程Ｓ３が完了すると、搬出工程Ｓ４が行われる。搬出工程Ｓ４では、制御部７０が、排気を開始してから所定時間が経過した後、排気を停止させる。これによって、収容空間１０Ｓに残存する雰囲気の流れは停止される。そして、収容空間１０Ｓの大気開放が行われることによって、収容空間１０Ｓ内の気圧が戻される。収容空間１０Ｓの大気開放は、排気口１４を介して行われてもよいし、あるいは、不図示の吸気口を介して行われてもよい。 FIG. 7 is a schematic side view showing a vacuum drying device 1 when the processed substrate 9 is carried out to the outside. When the exhaust step S3 is completed, the carry-out step S4 is performed. In the carry-out step S4, the control unit 70 stops the exhaust after a predetermined time has elapsed from the start of the exhaust. As a result, the flow of the atmosphere remaining in the accommodation space 10S is stopped. Then, the air pressure in the accommodation space 10S is returned by opening the accommodation space 10S to the atmosphere. The accommodation space 10S may be opened to the atmosphere through the exhaust port 14 or may be performed through an intake port (not shown).

搬出工程Ｓ４では、制御部７０が、基板９を支持している複数の支持部５２を上昇させることによって、基板９を下位置Ｌ２から上位置Ｌ１に移動させる。なお、収容空間１０Ｓの大気開放は、基板９を下位置Ｌ２から上位置Ｌ１に移動させた後、あるいは、基板９を下位置Ｌ２から上位置Ｌ１に向けて移動させている最中に行われてもよい。 In the unloading step S4, the control unit 70 moves the substrate 9 from the lower position L2 to the upper position L1 by raising the plurality of support portions 52 that support the substrate 9. The accommodation space 10S is opened to the atmosphere after the substrate 9 is moved from the lower position L2 to the upper position L1, or while the substrate 9 is moved from the lower position L2 to the upper position L1. You may.

また、制御部７０が開閉部１０Ｐを開けると、不図示の搬送装置が開放された開閉部１０Ｐを介して上位置Ｌ１に支持されている基板９を受け取り、収容空間１０Ｓから当該基板９を搬出する。 Further, when the control unit 70 opens the opening / closing unit 10P, the transfer device (not shown) receives the substrate 9 supported at the upper position L1 via the opened opening / closing unit 10P, and carries out the substrate 9 from the accommodation space 10S. To do.

図５および図６に示すように、減圧乾燥装置１では、チャンバ１０の底面１００に設けられた掘り込みである凹部１２に排気口１４が設けられている。このため、凹部１２の開口は排気口１４よりも大きいため、排気口１４の見かけ上の開口面積を大きくすることができる。これにより、排気工程Ｓ２にて、排気口１４へ向かう雰囲気の流速を低下させることができる。 As shown in FIGS. 5 and 6, in the vacuum drying device 1, the exhaust port 14 is provided in the recess 12 which is a digging provided in the bottom surface 100 of the chamber 10. Therefore, since the opening of the recess 12 is larger than that of the exhaust port 14, the apparent opening area of the exhaust port 14 can be increased. As a result, in the exhaust step S2, the flow velocity of the atmosphere toward the exhaust port 14 can be reduced.

図５および図６に示すように、減圧乾燥装置１では、排気口１４の上方を第１整流板３０で覆っている。この第１整流板３０によって、収容空間１０Ｓの第１整流板３０より上方の雰囲気が排気口１４へ直接吸い込まれることを妨げることができる。第１整流板３０の周囲から第１整流板３０の下方に雰囲気が吸い込まれるため、基板９から見た見かけ上の雰囲気の吸い込み口を拡大できるとともに、分散させることができる。これにより、基板９周囲の雰囲気の流速を低下できる。 As shown in FIGS. 5 and 6, in the vacuum drying device 1, the upper part of the exhaust port 14 is covered with the first straightening vane 30. The first straightening vane 30 can prevent the atmosphere above the first straightening vane 30 in the accommodation space 10S from being directly sucked into the exhaust port 14. Since the atmosphere is sucked from the periphery of the first straightening vane 30 to the lower side of the first straightening vane 30, the suction port of the apparent atmosphere seen from the substrate 9 can be enlarged and dispersed. As a result, the flow velocity of the atmosphere around the substrate 9 can be reduced.

図５および図６に示すように、減圧乾燥装置１では、凹部１２の内縁部と第１整流板３０の端部との隙間（−Ｘ側隙間３４ａおよび＋Ｘ側隙間３４ｂ）の上方を、第２整流板４０（第２整流板４０ａ−４０ｄ）で覆っている。これにより、第２整流板４０直上の雰囲気が、凹部１２と第１整流板３０の隙間に直接吸い込まれることを妨げることができる。第２整流板４０の周囲から第２整流板４０の下方に吸い込まれるため、基板９から見た見かけ上の雰囲気の吸い込み口を拡大できるとともに、分散させることができる。これにより、基板９周囲の雰囲気の流速を低下できる。 As shown in FIGS. 5 and 6, in the vacuum drying device 1, the upper part of the gap (−X side gap 34a and + X side gap 34b) between the inner edge portion of the recess 12 and the end portion of the first straightening vane 30 is the first. It is covered with 2 straightening vanes 40 (second straightening vanes 40a-40d). Thus, the atmosphere immediately above the second straightening plate 40, it is possible to prevent the sucked directly into the gap of the recess 12 and the first rectifier plate 30. Since the suction port is sucked from the periphery of the second straightening vane 40 to the lower side of the second straightening vane 40, the suction port of the apparent atmosphere seen from the substrate 9 can be enlarged and dispersed. As a result, the flow velocity of the atmosphere around the substrate 9 can be reduced.

図５および図６に示すように、第２整流板４０と第１整流板３０の隙間、第２整流板４０と底面１００（外面１０２）の隙間、第１整流板３０と底面１２０の隙間は、水平方向に広がっている。このため、収容空間１０Ｓの雰囲気が、鉛直方向下側に設けられた排気口１４に到達するまでにこれらの隙間を通ることで、気流の方向が鉛直方向と水平方向とにジグザグ状に変更される。この場合、第１整流板３０および第２整流板４０を設けないときと比べて、雰囲気が流れる通路の総距離を長くすることができる。これによって、雰囲気の流速の低下を図ることができる。 As shown in FIGS. 5 and 6, the gap between the second straightening vane 40 and the first straightening vane 30, the gap between the second straightening vane 40 and the bottom surface 100 (outer surface 102), and the gap between the first straightening vane 30 and the bottom surface 120 , Spreads horizontally. Therefore, the atmosphere of the accommodation space 10S passes through these gaps before reaching the exhaust port 14 provided on the lower side in the vertical direction, so that the direction of the air flow is changed in a zigzag shape in the vertical direction and the horizontal direction. To. In this case, the total distance of the passage through which the atmosphere flows can be increased as compared with the case where the first straightening vane 30 and the second straightening vane 40 are not provided. As a result, the flow velocity of the atmosphere can be reduced.

第１整流板３０、第２整流板４０を平坦な板状とすることにより、これらの表面で気流が乱れることを抑制できる。また、チャンバ１０の底面１００（外面１０２）および凹部１２の底面１２０も平面とすることにより、これらの面で気流が乱れることを抑制できる。 By forming the first straightening vane 30 and the second straightening vane 40 into a flat plate shape, it is possible to suppress the turbulence of the air flow on these surfaces. Further, by making the bottom surface 100 (outer surface 102) of the chamber 10 and the bottom surface 120 of the recess 12 also flat, it is possible to suppress the turbulence of the air flow on these surfaces.

＜２． 変形例＞
以上、実施形態について説明してきたが、本発明は上記のようなものに限定されるものではなく、様々な変形が可能である。 <2. Modification example>
Although the embodiments have been described above, the present invention is not limited to the above, and various modifications can be made.

上記実施形態では、排気口１４は、凹部１２の凹部の深さ方向の底面１２０に設けられている。しかしながら、凹部１２の内壁面１２２に設けられていてもよい。 In the above embodiment, the exhaust port 14 is provided on the bottom surface 120 of the recess 12 in the depth direction. However, it may be provided on the inner wall surface 122 of the recess 12.

上記実施形態では、排気口１４は、鉛直方向下側の底面１００に設けられた凹部１２内に設けられている。排気口１４は、収容空間１０Ｓに面しており、底面１００の外周端部から鉛直方向上向きに起立する壁面１０４に設けられていてもよい。 In the above embodiment, the exhaust port 14 is provided in the recess 12 provided on the bottom surface 100 on the lower side in the vertical direction. The exhaust port 14 faces the accommodating space 10S, and may be provided on a wall surface 104 that rises vertically upward from the outer peripheral end of the bottom surface 100.

図８は、変形例に係る減圧乾燥装置１Ａを示す図である。上記実施形態では、凹部１２の内部に第１整流板３０が配置されている。図８に示す減圧乾燥装置１Ａのように、凹部１２の上方（凹部１２の外部）に第１整流板３０を設けてもよい。また、減圧乾燥装置１Ａのように、第２整流板４０（第２整流板４０ａ−４０ｄ）を第１整流板３０よりも下側（排気口１４に近い側）に配置してもよい。第２整流板４０は、第１整流板３０の端部（−Ｘ側端部３２ａまたは＋Ｘ側端部３２ｂ）および凹部１２の内縁部（−Ｘ側凹部１２ａの−Ｘ側縁部１２４ａまたは＋Ｘ側凹部１２ｂの＋Ｘ側縁部１２４ｂ）とＺ軸方向に重なる位置に配置されている。第２整流板４０をこのように設けることによっても、第１整流板３０と凹部１２の隙間に雰囲気が吸い込まれることを妨げることができる。 FIG. 8 is a diagram showing a vacuum drying device 1A according to a modified example. In the above embodiment, the first straightening vane 30 is arranged inside the recess 12. As in the vacuum drying device 1A shown in FIG. 8, the first straightening vane 30 may be provided above the recess 12 (outside the recess 12). Further, the second straightening vane 40 (second straightening vane 40a-40d) may be arranged below the first straightening vane 30 (the side closer to the exhaust port 14) as in the vacuum drying device 1A. The second straightening vane 40 includes an end portion (-X side end portion 32a or + X side end portion 32b) of the first straightening vane 30 and an inner edge portion of the concave portion 12 (-X side edge portion 124a or + X of the -X side concave portion 12a). It is arranged at a position where it overlaps with the + X side edge portion 124b ) of the side recess 12b in the Z-axis direction. By providing the second straightening vane 40 in this way, it is possible to prevent the atmosphere from being sucked into the gap between the first straightening vane 30 and the recess 12.

この発明は詳細に説明されたが、上記の説明は、すべての局面において、例示であって、この発明がそれに限定されるものではない。例示されていない無数の変形例が、この発明の範囲から外れることなく想定され得るものと解される。上記各実施形態及び各変形例で説明した各構成は、相互に矛盾しない限り適宜組み合わせたり、省略したりすることができる。 Although the present invention has been described in detail, the above description is exemplary in all aspects and the invention is not limited thereto. It is understood that a myriad of variations not illustrated can be envisioned without departing from the scope of the invention. The configurations described in the above embodiments and the modifications can be appropriately combined or omitted as long as they do not conflict with each other.

１,１Ａ 減圧乾燥装置
１０ チャンバ（筐体）
１００ 底面（第１面）
１０Ｓ 収容空間
１２ 凹部
１２ａ −Ｘ側凹部
１２ｂ ＋Ｘ側凹部
１２０ 底面
１２２ 内壁面
１２４ａ −Ｘ側縁部（内縁部）
１２４ｂ ＋Ｘ側縁部（内縁部）
１４ 排気口
２０ 吸引機構
３０，３０ａ，３０ｂ 第１整流板
３２ａ −Ｘ側端部
３２ｂ ＋Ｘ側端部
３４ａ −Ｘ側隙間
３４ｂ ＋Ｘ側隙間
４０，４０ａ，４０ｂ，４０ｃ，４０ｄ 第２整流板
５０ 昇降機構
５２，５２ａ，５２ｂ 支持部（基板保持部）
５２０ リフトプレート
５２２ ピン
５４ 昇降駆動部（移動駆動部）
７０ 制御部
９ 基板
９０ 上面
Ｌ１ 上位置（第１基板位置）
Ｌ２ 下位置（第２基板位置）
1,1A decompression drying device 10 chamber (housing)
100 bottom (first side)
10S Storage space 12 Recesses 12a-X side recesses 12b + X side recesses 120 Bottom surface 122 Inner wall surface 124a-X side edges (inner edges)
124b + X side edge (inner edge)
14 Exhaust port 20 Suction mechanism 30, 30a, 30b First rectifying plate 32a-X side end 32b + X side end 34a-X side gap 34b + X side gap 40, 40a, 40b, 40c, 40d Second rectifying plate 50 Lifting and lowering Mechanism 52, 52a, 52b Support part (board holding part)
520 Lift plate 522 pin 54 Lifting drive unit (moving drive unit)
70 Control unit 9 Board 90 Top surface L1 Top position (1st board position)
L2 lower position (second board position)

Claims (11)

第１主面および第２主面を有し前記第１主面に処理液を有する基板を、減圧によって乾燥させる減圧乾燥装置であって、
前記基板を収容可能な収容空間を有するとともに前記収容空間に面する第１面を有する筐体と、
第１面に設けられている凹部と、
前記凹部の深さ方向の底面に設けられている排気口と、
前記排気口から前記収容空間の雰囲気を吸引する吸引機構と、
前記収容空間における、前記排気口と前記深さ方向に重なる位置に配される第１部材と、
前記収容空間における、前記第１部材の端部および前記凹部の内縁部と前記深さ方向に間隔をおいて重なる位置に配される第２部材と、
前記収容空間における、前記第１部材および前記第２部材に対して前記排気口とは反対側の位置に前記基板を保持する基板保持部と、
を備える、減圧乾燥装置。 A vacuum drying device for drying a substrate having a first main surface and a second main surface and having a treatment liquid on the first main surface by decompression.
A housing having a storage space capable of accommodating the substrate and having a first surface facing the accommodation space.
The recess provided on the first surface and
An exhaust port provided on the bottom surface of the recess in the depth direction and
A suction mechanism that sucks the atmosphere of the accommodation space from the exhaust port,
A first member arranged at a position overlapping the exhaust port in the depth direction in the accommodation space,
In the accommodation space, a second member arranged at a position where the end portion of the first member and the inner edge portion of the recess are overlapped with each other at intervals in the depth direction.
A substrate holding portion that holds the substrate at a position opposite to the exhaust port with respect to the first member and the second member in the accommodation space.
A vacuum drying device. 請求項１の減圧乾燥装置であって、
前記基板保持部は、前記基板の前記第２主面を支持する複数のピンを含む、減圧乾燥装置。 The vacuum drying device according to claim 1.
The substrate holding portion is a vacuum drying device including a plurality of pins that support the second main surface of the substrate. 請求項２の減圧乾燥装置であって、
前記複数のピンは、
第１方向に配される複数の第１ピンと、
前記複数の第１ピンから前記第１方向に直交する第２方向に間隔をあけて前記第１方向に配される複数の第２ピンと、
を含み、
前記第２部材は、前記複数の第１ピンと前記複数の第２ピンとの間に配されている、減圧乾燥装置。 The vacuum drying device according to claim 2.
The plurality of pins
A plurality of first pins arranged in the first direction,
A plurality of second pins arranged in the first direction at intervals in the second direction orthogonal to the first direction from the plurality of first pins,
Including
The second member is a vacuum drying device arranged between the plurality of first pins and the plurality of second pins. 請求項２または請求項３の減圧乾燥装置であって、
前記複数のピンを前記深さ方向に移動させることによって、前記基板を第１基板位置と、前記第１基板位置よりも前記排気口に近い第２基板位置との間で移動させる移動駆動部、
をさらに備える、減圧乾燥装置。 The vacuum drying apparatus according to claim 2 or 3 .
A moving drive unit that moves the substrate between a first substrate position and a second substrate position that is closer to the exhaust port than the first substrate position by moving the plurality of pins in the depth direction.
A vacuum drying device further comprising. 請求項４の減圧乾燥装置であって、
前記移動駆動部は、前記吸引機構が前記排気口を介して雰囲気の吸引を開始した後、前記基板を前記第１基板位置から前記第２基板位置に移動させる、減圧乾燥装置。 The vacuum drying apparatus according to claim 4 .
The moving drive unit is a vacuum drying device that moves the substrate from the position of the first substrate to the position of the second substrate after the suction mechanism starts suctioning the atmosphere through the exhaust port. 請求項１から請求項５のいずれか１項の減圧乾燥装置であって、
前記第１部材が前記第２部材と前記排気口との間に設けられている、減圧乾燥装置。 The vacuum drying apparatus according to any one of claims 1 to 5.
A vacuum drying device in which the first member is provided between the second member and the exhaust port. 請求項６の減圧乾燥装置であって、
前記第１部材の少なくとも一部が、前記凹部内にある、減圧乾燥装置。 The vacuum drying apparatus according to claim 6.
A vacuum drying device in which at least a part of the first member is in the recess. 請求項７の減圧乾燥装置であって、
前記第１部材の全部が、前記凹部内にある、減圧乾燥装置。 The vacuum drying apparatus according to claim 7.
A vacuum drying device in which all of the first member is in the recess. 請求項７または請求項８の減圧乾燥装置であって、
前記第１部材の前記端部が、前記内縁部と面一である、減圧乾燥装置。 The vacuum drying apparatus according to claim 7 or 8.
A vacuum drying device in which the end portion of the first member is flush with the inner edge portion. 請求項１から請求項９のいずれか１項の減圧乾燥装置であって、
前記基板保持部は、前記基板を前記第１主面が鉛直方向上向きとなる水平姿勢で保持し、
前記第１部材、前記第２部材および前記排気口は、前記基板保持部に保持される前記基板の前記第２主面側に設けられている、減圧乾燥装置。 The vacuum drying apparatus according to any one of claims 1 to 9.
The substrate holding portion holds the substrate in a horizontal posture in which the first main surface faces vertically upward.
A vacuum drying device in which the first member, the second member, and the exhaust port are provided on the second main surface side of the substrate, which is held by the substrate holding portion. 第１主面および第２主面を有し前記第１主面に処理液を有する基板を、減圧によって乾燥させる減圧乾燥方法であって、
（ａ）収容空間に面する第１面を有しており、筐体に、前記基板を保持する工程と、
（ｂ）前記（ａ）工程の後、前記第１面に設けられている凹部の深さ方向の底面に設けられている排気口から、前記収容空間の雰囲気を吸引する工程と、
（ｃ）前記（ｂ）工程において、前記収容空間における、前記排気口と前記深さ方向に重なる位置に配される第１部材により、前記排気口に向かう気流の方向を変更する工程と、
（ｄ）前記（ｂ）工程において、前記収容空間における、前記第１部材の端部および前記凹部の内縁部の双方と前記深さ方向に間隔をおいて重なる位置に配される第２部材により、前記排気口に向かう気流の方向を変更する工程と、
を含む、減圧乾燥方法。 A vacuum drying method in which a substrate having a first main surface and a second main surface and having a treatment liquid on the first main surface is dried under reduced pressure.
(A) A step of holding the substrate in a housing, which has a first surface facing the accommodation space,
(B) After the step (a), a step of sucking the atmosphere of the accommodation space from an exhaust port provided on the bottom surface of the recess provided on the first surface in the depth direction.
(C) In the step (b), a step of changing the direction of the air flow toward the exhaust port by a first member arranged at a position overlapping the exhaust port in the depth direction in the accommodation space.
(D) In the step (b), the second member arranged at a position in the accommodation space that overlaps both the end portion of the first member and the inner edge portion of the recess in the depth direction at intervals. , The process of changing the direction of the airflow toward the exhaust port,
Decompression drying method including.
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JP3631847B2 (en) 1996-05-28 2005-03-23 大日本印刷株式会社 Vacuum drying equipment
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JP2002372368A (en) * 2001-06-14 2002-12-26 Dainippon Printing Co Ltd Pressure reducing dryer
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JP3784305B2 (en) * 2001-11-20 2006-06-07 東京エレクトロン株式会社 Vacuum drying apparatus and vacuum drying method
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TWI231950B (en) * 2002-11-28 2005-05-01 Tokyo Electron Ltd Substrate processing apparatus and cleaning method
KR20050050818A (en) * 2003-11-26 2005-06-01 삼성에스디아이 주식회사 Method of spin coating and device for the method
JP4312787B2 (en) * 2006-11-15 2009-08-12 東京エレクトロン株式会社 Vacuum dryer
CN101685270A (en) * 2008-09-25 2010-03-31 东京毅力科创株式会社 Decompression drying device and method
JP2011119534A (en) * 2009-12-04 2011-06-16 Renesas Electronics Corp Heat treatment apparatus and heat treatment method
CN201815456U (en) * 2010-10-09 2011-05-04 京东方科技集团股份有限公司 Structure of pressure reduced drying chamber
JP5951444B2 (en) * 2012-10-25 2016-07-13 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
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JP6740028B2 (en) * 2015-07-29 2020-08-12 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method and storage medium
JP6872328B2 (en) * 2016-09-06 2021-05-19 株式会社Ｓｃｒｅｅｎホールディングス Vacuum drying device, vacuum drying system, vacuum drying method
CN107042244A (en) * 2017-05-27 2017-08-15 宁波奇尘电子科技有限公司 A kind of reverse multi-angle blow drying device

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