JP6726821B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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JP6726821B2
JP6726821B2 JP2017001924A JP2017001924A JP6726821B2 JP 6726821 B2 JP6726821 B2 JP 6726821B2 JP 2017001924 A JP2017001924 A JP 2017001924A JP 2017001924 A JP2017001924 A JP 2017001924A JP 6726821 B2 JP6726821 B2 JP 6726821B2
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Prior art keywords
semiconductor chip
conductive paste
recess
electrode plate
bonding layer
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JP2017001924A
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English (en)
Japanese (ja)
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JP2018113301A (ja
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明徳 榊原
明徳 榊原
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Denso Corp
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Denso Corp
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Priority to JP2017001924A priority Critical patent/JP6726821B2/ja
Priority to US15/847,083 priority patent/US10269753B2/en
Priority to KR1020170176028A priority patent/KR102056899B1/ko
Priority to CN201711385296.3A priority patent/CN108321139A/zh
Priority to BR102017027714A priority patent/BR102017027714A2/pt
Priority to RU2017145049A priority patent/RU2678509C1/ru
Priority to TW106145499A priority patent/TWI672748B/zh
Priority to EP17210571.0A priority patent/EP3346487A1/en
Publication of JP2018113301A publication Critical patent/JP2018113301A/ja
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Publication of JP6726821B2 publication Critical patent/JP6726821B2/ja
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
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US15/847,083 US10269753B2 (en) 2017-01-10 2017-12-19 Semiconductor device and manufacturing method of semiconductor device
CN201711385296.3A CN108321139A (zh) 2017-01-10 2017-12-20 半导体器件和半导体器件的制造方法
KR1020170176028A KR102056899B1 (ko) 2017-01-10 2017-12-20 반도체 장치와 반도체 장치의 제조 방법
BR102017027714A BR102017027714A2 (pt) 2017-01-10 2017-12-21 dispositivo semicondutor e método de fabricação do dispositivo semicondutor
RU2017145049A RU2678509C1 (ru) 2017-01-10 2017-12-21 Полупроводниковое устройство и способ изготовления полупроводникового устройства
TW106145499A TWI672748B (zh) 2017-01-10 2017-12-25 半導體裝置及半導體裝置的製造方法
EP17210571.0A EP3346487A1 (en) 2017-01-10 2017-12-26 Semiconductor device with a joining layer with a part with higher porosity in a recess of an electrode plate and corresponding manufacturing method

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WO2019087920A1 (ja) 2017-10-30 2019-05-09 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法
JP7074621B2 (ja) * 2018-09-05 2022-05-24 株式会社東芝 半導体装置及びその製造方法
CN111315183B (zh) * 2018-12-12 2022-02-01 成都鼎桥通信技术有限公司 用于电子元器件的导热组件、制冷装置及电子设备
US12054568B2 (en) * 2018-12-17 2024-08-06 Tokuyama Corporation Optical material composition and optical material
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US11776871B2 (en) * 2020-12-15 2023-10-03 Semiconductor Components Industries, Llc Module with substrate recess for conductive-bonding component

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JPH04139883A (ja) * 1990-10-01 1992-05-13 Ricoh Co Ltd 半導体素子の接着固定構造
JPH0493142U (zh) * 1990-12-25 1992-08-13
JP4904767B2 (ja) * 2005-10-17 2012-03-28 富士電機株式会社 半導体装置
WO2008078746A1 (ja) * 2006-12-26 2008-07-03 Panasonic Corporation 半導体素子の実装構造体及び半導体素子の実装方法
JP4895994B2 (ja) * 2006-12-28 2012-03-14 株式会社日立製作所 金属粒子を用いた接合方法及び接合材料
US7838974B2 (en) * 2007-09-13 2010-11-23 National Semiconductor Corporation Intergrated circuit packaging with improved die bonding
JP2010263108A (ja) * 2009-05-08 2010-11-18 Elpida Memory Inc 半導体装置及びその製造方法
JP5636720B2 (ja) * 2010-04-01 2014-12-10 三菱電機株式会社 半導体装置の製造方法および接合治具
US9320145B2 (en) * 2010-09-13 2016-04-19 Pst Sensors (Proprietary) Limited Assembling and packaging a discrete electronic component
JP2013123016A (ja) * 2011-12-12 2013-06-20 Denso Corp 半導体装置
JP2014013855A (ja) 2012-07-05 2014-01-23 Mitsubishi Electric Corp 半導体発光装置の製造方法および半導体発光装置
JP2014029897A (ja) * 2012-07-31 2014-02-13 Hitachi Ltd 導電性接合体およびそれを用いた半導体装置
JP6102676B2 (ja) 2013-10-23 2017-03-29 株式会社デンソー 半導体装置
JP6477486B2 (ja) 2013-10-23 2019-03-06 日立化成株式会社 ダイボンドシート及び半導体装置の製造方法
JP6143687B2 (ja) 2014-02-18 2017-06-07 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2015177182A (ja) * 2014-03-18 2015-10-05 三菱電機株式会社 パワーモジュール
DE102014114982B4 (de) * 2014-10-15 2023-01-26 Infineon Technologies Ag Verfahren zum Bilden einer Chip-Baugruppe
JP6289359B2 (ja) 2014-12-17 2018-03-07 三菱電機株式会社 電力用半導体装置
JP6610102B2 (ja) * 2015-09-08 2019-11-27 株式会社村田製作所 半導体モジュール
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